Rugged Power MOSFETs IRF130R, IRF131R, IRF132R, IRF133R Avalanche Energy Rated N-Channel Power MOSFETs 12A and 14A, 60V-100V Tos(on) = 0.180 and 0.250 Features: @ Single pulse avalanche energy rated @ SOA is power-dissipation limited @ Nanosecond switching speeds @ Linear transfer characteristics Mf High input impedance The IRF130R, 'RF131R, IRF132R and IRF133R are ad- vanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are n-channel en- hancement-mode silicon-gate power field-effect transis- tors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and driv- ers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits. The IRF-types are supplied in the JEDEC TO-204AA steel package. Absolute Maximum Ratings File Number 1986 N-CHANNEL ENHANCEMENT MODE 92CS-42658 TERMINAL DIAGRAM TERMINAL DESIGNATION DRAIN SOURCE (FLANGE) Oo, O JEDEC TO - 204AA Parameter IRF130R IRF131R IRF132R IRF133R Units Vos Drain - Source Voltage @ 100 60 100 60 Vv Voor Drain - Gate Voltage (Ras = 20 KN) @ 100 60 100 60 v lo @ Tc = 25C Continuous Drain Current 14 14 12 12 A lo @ Tc = 100C Continuous Drain Current 9.0 9.0 8.0 8.0 A lom Pulsed Drain Current @ 56 56 48 48 A Ves Gate - Source Voltage +20 Vv Pp @ Te = 26C Max. Power Dissipation 75 (See Fig. 14) Ww Linear Derating Factor 0.6 (See Fig. 14) Ww/C Eas Single Pulse Avalanche Energy Rating @ 69 mj The Se clon a age 510 160 c Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) CRugged Power MOSFETs Electrical Characteristics @ Tc = 25C (Unless Otherwise Specified) IRF130R, IRF131R, IRF132R, IRF133R Par Type Min. Typ. Max. | Units Test Conditions BVoss Drain - Source Breakdown Voltage IRF130R _ = IRF132R | 100 - Vv Ves = OV IRF131R = IRF133R{ _ _ |p = 250uA Vesum Gate Threshold Voitage ALL 2.0 _ 40 Vos = Ves, lo = 2500 A loss Gate-Source Leakage Forward ALL = = 100 nA Ves = 20V less Gate-Source Leakage Reverse ALL _ -100 nA Ves = -20V loss Zero Gate Voltage Drain Current = = 250 uA Vos = Max. Rating, Ves = OV ALL = 4000 | A | Vos = Max. Rating x 0.8, Vos = OV, To = 125C totem On-State Drain Current @ IRFIZ0R| 44 _ _ A IRFISIR Vos > liom X Rosion mex, Vas = 10V IRF132R] 4 _ _ A IRF133R Roston Static Drain-Source On-State IRF130R - 0.14 0.18 Q Resistance @ een Ves = 10V, lo = 8.0A IRF133R | 0.20 | 0.25 Q Qre Forward Transconductance @ ALL 4.0 5.5 _ S(Q) | Vos > lpion X Rostonmax., lo = 8.0A Ciss Input Capacitance ALL =_ 600 = pF Ves =: OV, Vos = 25V. f = 1.0 MHz Coss Output Capacitance ALL = 300 = pF See Fig. 10 Cres Reverse Transfer Capacitance ALL ~ 100 pF : toton Turn-On Delay Time ALL =- = 30 ns Vop == 36V, lo = 8.0A, Zo = 150 t Rise Time ALL _ = 75 ns See Fig. 17 taomn Turn-Off Delay Time ALL _ = 40 ns (MOSFET switching times are essentially th Fall Time ALL _ 45 ns independent of operating temperature.) Qy Total Gate Charge ALL _ 18 30 nc Ves = 10V, Ip = 18A, Vos = 0.8 Max. Rating. (Gate-Source Plus Gate-Drain) See Fig. 18 for test circuit. (Gate charge is Qos Gate-Source Charge ALL 9.0 _ nc essentially independent of operating om "BAe" temperature.) Qyo Gate-Drain (Miller) Charge ALL 9.0 _ nc bo internal Drain Inductance ALL _ 5.0 _ nH Measured between Modified MOSFET the contact screw on symbol! showing the header that is closer to | internal device , source and gate pins inductances and center of die. up Ls Internal Source Inductance ALL _ 12.5 _ nH Measured from the source pin, 6 mm 6 (0.25 in.) from s header and source 5 bonding pad. sacs anes Thermal Resistance RuJC _Junction-to-Case ALL _ = 1.67_ | C/W RmCS _Case-to-Sink ALL _ 0.1 = C/W_| Mounting surface flat, smooth, and greased. RinJA Junction-to-Ambient ALL _ = 30 C/W | Free Air Operation Source-Drain Diode Ratings and Characteristics Is Continuous Source Current IRF130R _ _ 14 A Modified MOSFET symbol (Body Diode) IRFA3Z1R showing the integral IRF132R reverse P-N junction rectifier. g iRFIgaR} ~~ | | % | A tm Pulse Source Current IRF130R | _ 56 A 6 (Body Diode) @ IRF131R IRF132R IRF133R| _ 48 A sacs azase Vso Diode Forward Voitage @ IRF130R _ = = = IRF131R| 25 v Te = 25C, Is = 14A, Vas = OV IRF132R = 950. = = IRF133R | - 2.3 Vv Te = 25C, Is = 12A, Vas = OV tre Reverse Recovery Time ALL = 360 = ns Ty = 150C, le = 14A, dte/dt = 100A/us Qan Reverse Recovered Charge ALL = 2.1 = uc Ty = 150C, le = 14A, die/dt = 100A/ys ton Forward Turn-on Time ALL Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Ls + Lo. @ Ty = 25C to 150C. @ Pulse Test: Pulse width < 300us, Duty Cycle = 2%. @ Repetitive Rating: Pulse width limited by max. junction temperature. See Transient Thermal Impedance Curve (Fig. 5). Voo = 25V, starting T; = 25C, L = 530uH, Ros = 252, Ipeak = 14A. See figures 15, 16.Rugged Power MOSFETs IRF130R, IRF131R, IRF132R, IRF133R (gp, DAAIN CURRENT (AMPERES) 0 0 Vps. DRAIN TO SQUACE VOLTAGE (VOLTS) Fig. 1 Typical Output Characteristics 80 ws PULSE TEST Ip. ORAIN CURRENT (AMPERES) 9 oa 20 08 Vos. ORAIN TO-SOURCE VOLTAGE (VOLTST 30 12 40 16 Fig. 3 Typical Saturation Characteristics 2S = ew > 6 Znucv Rae, NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE (PER UNIT) & Ig. DRAIN CURRENT (AMPERES) tp, ORAIN CURRENT (AMPERES) wa PULSE TEST Vos > 'ofon) * Aosion) max. Ty = #12500 2 4 5 a 10 Vs. GATE TO SOURCE VOLTAGE (VO.TS) Fig. 2 Typical Transfer Characteristics ut BY Rosion! IRF 132A, 3A 10 gs rf 100 us Te = 25C Ty = 180C MAX + Rensc = 187C /W 4 itt SINGLE PULSE IRF131A, 3A WAF130R, 2R 2 $ 0 20 $0 100-200 Vos. DRAIN TO-SQUARCE VOLTAGE (VOLTS! Fig. 4 Maximum Safe Operating Area bt} hot2 1. DUTY FACTOR, O= zt 2. PER UNIT BASE Ringe = 1.67 DEG. C/W. 3. Ta Te* Pom Zinyctt). 5 tor 2 5 10 2 5 10 O48 0.05 0.02 0.01 ws 2 5 104 5 3 2 ty, SQUARE WAVE PULSE DURATION {SECONDS} Fig. 5 Mi Effective Ti Thermal | to-Case Vs. Pulse Duration 6-4BVoss, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE INOAMALIZED) 9ts, TRANSCONDUCTANCE (SIEMENS) - Vos > 'oion) * Ros(on} max. W us PULSE TEST ns o $ 10 15 2 3 ip. DRAIN CURRENT (AMPERES) Fig. 6 Typical Transconductance Vs. Drain Current 126 tis 2 a o 2 a 085 07s 40 9 40 80 120 160 Ty, JUNCTION TEMPERATURE (C) Fig. 8 Breakdown Voltage Vs. Temperature 2000 Ves = \ ' I 1600 Cigg = Cem + Coy, Cog SHORTED Crsg = Cog = Cay + Copy s 8 C, CAPACITANCE (pF} 0 0 20 30 40 50 Vps, ORAIN-TO-SOUACE VOLTAGE (VOLTS} Fig. 10 Typical Capacitance Vs. Drain-to-Source Voltage Rugged Power MOSFETs IRF130R, IRF131R, IRF132R, IRF133R S. ~ Ty = 150C Ing. REVERSE DRAIN CURRENT (AMPERES) y= 25C 0 t 2 3 4 Vgg. SOURCE-TO-ORAIN VOLTAGE (VOLTS) Fig. 7 Typical Source-Drain Diode Forward Voltage (NORMALIZED) = an Ros{on). ORAIN-TO-SOUACE ON RESISTANCE 02 -40 0 40 80 120 Ty, JUNCTION TEMPERATURE (9C) Fig. 9 Normalized On-Resistance Vs. Temperature Vps = 20V I = SOV Vos = 80V, IRF130R, Vqg. GATE-TO-SOURCE VOLTAGE (VOLTS) ip= FOR TEST CIRCUIT SEE FIGURE 18 0 8 16 a 2 40 Og, TOTAL GATE CHARGE (nC) Fig. 11 Typical Gate Charge Vs. Gate-to-Source VoltageRugged Power MOSFETs IRF130R, IRF131R, IRF132R, IRF133R 06 = | | T I 9 Rpsion) MEASURED WITH CURRENT PULSE OF 3 2B e"BURATION. INITIAL Ty = 25C. (HEATING 0-5 [- EFFECT OF 2.0 sa PULSE IS MINIMAL.) I 2 < 2 go 04 = z Ves = 10V ws 2 03 > 3 o e 2 02 z LY Lee z 01 Vgg = 20V = 0 10 20 0 0 50 #0 Jp. ORAIN CURRENT (AMPERES) Fig. 12 Typical On-Resistance Vs. Drain Current 80 70 60 30 Pp. POWER DISSIPATION (WATTS) & 20 0 2 40 60 80 100 120 140 Tc, CASE TEMPERATURE (C) Fig. 14 Power Vs. Temperature Derating Curve 9208-42660 Fig. 16 Unclamped Energy Waveforms nv T O.2ut 50 KS BATTERY a I a a Ip, ORAIN CURRENT (AMPERES) o Q 2s 50 i] 100 125 180 Te. CASE TEMPERATURE (C) Fig. 13 Maximum Drain Current Vs. Case Temperature VARY tp TO OBTAIN bur REQUIRED PEAK I u Res Vgs*10V ! Fie 92C$- 42659 Fig. 15 Unclamped Energy Test Circuit PRE = UkHe the las Fig. 17 Switching Time Test Circuit Vos CURRENT (ISOLATED REGULATOR SUPPLY} SAME TYPE AS OUT -Vos ig =e 10 CUNRENT = CURRENT SHUNT SHUNT Fig. 18 Gate Charge Test Circuit