DATA SHEET SILICON TRANSISTORS 2SB805,2SB806 PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION The 2SB805 and 2SB806 are designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS @ World Standard Miniature Package : SOT89 in millimeters (inches) @ High Collector to Emitter Voltage : Vceo > 120 V (258806), A5+01 : Veeo > 100 V (2SB805) - - Complement to NPN type 2SD1006 and 2SD1007 respectively 1.6402 1.5+40.1 ABSOLUTE MAXIMUM RATINGS o Maximum Voltages and Currents (Tg = 25 C) 2SB805 2SB806 3} Collector to Base Voltage Vcso - 100 120 Vv = E c B a Bs Collector to Emitter Voltage VcEO 100 120 Vv stl | Sis Emitter to Base Voltage VeEBO 5.0 Vv 00 | { i Collector Current (DC) Ic -0.7 A o 0.42 +0.06 * - 0.42--0.06 oy so 06 {1 Collector Current (Pulse) Ic 1,2 A @ 1.5 yo 0.414383 Maximum Power Dissipation 3.0 Total Power Dissipation at 25 C Ambient Temperature** Py 2.0 Ww 1. Emitter Maximum Temperatures ; 2. Collector Junction Temperature Tj 150 C * ase SOT-89 Storage Temperature Range Tstg 55 to +150 C *PW <10 ms, duty cycle 50 % **When mounted on ceramic substrate of 16 cm? x0.7 mm ELECTRICAL CHARACTERISTICS (Tg = 25 c} @ CHARACTERISTIC SYMBOL MIN, TYP. MAX, UNIT TEST CONDITIONS -100 nA 2SB805 Vcp=-100 V, Ip=0 Collector Cutoff Current IcBO ~100 nA 2SB806 Vop=120 V, IE=0 Emitter Cutoff Current leEBO 100 nA Veg=5.0 V, Ic =0 DC Current Gain hee4 45 200 Vce=-1.0 V, Ic=-5.0 mA ae DC Current Gain hre2 90 200 400 . Vce=1.0 V, Ic =-100 mA . ee Collector Saturation Voltage VCE (sat) -0.4 0.6 Vv ic =500 mA, ig=50 mA ae Base Saturation Voltage VBE (sat) -0.9 1.5 Vo] Ig =-500 mA, Ip=-50 mA wee Base to Emitter Voltage VBE 550 620 650 mV VcE=-10 V, Ic=-10 mA nee Gain Bandwidth Product. fT 75 - MHz VcE=10 V, IE =10 mA Output Capacitance Cob. 14 , pF Vcp=10 V, Ie =0, f= 1.0 MHz ***Pylsed : PW S350 us, duty cycle <2 %_ hee Classification 2SB805 - KM KL KK MARKING ' 988806 KR KO KP HEE - 90 180. 135 270 200 400 Document No. TGC1363B (0.D.No. TC5474A) ; Date Published November 1994 M NEC Corporation 1979 Printed in JapanNEC 2SB805,2SB806 TYPICAL CHARACTERISTICS (Tg = 25 C) : COLLECTOR CURRENT vs. AMBIENT TEMPE STU AEION vs. COLLECTOR TO EMITTER VOLTAGE 0.7 mmx 16 cm? 9 yh Mounted on ) = Ceramic Substrate uh = c 2g | a 5 oO 2 8 oa Qo oO 2 3S = 3 | 7 L ke a. 0 50 100 ~~ 150 200 250 0 TaAmbient TemperatureC 0 -0.1 ~0.2 -0.3 -0:4 -05 VcECollector to Emitter VoltageV COLLECTOR CURRENT vs. . COLLECTOR CURRENT. vs. COLLECTOR TO EMITTER VOLTAGE BASE TO EMITTER VOLTAGE 20 1000 70 A VcE=10 V 500 Pulsed < 16 60 200 | : 100 ~ 50 S < 5 12 -50 oO | - _ s -20 3 5 5 8.0 Oo -10 gos 2 8 4.0 -2 oO 7 -1 -0.5 Oo 4.0 -8.0 -12 16 20 VcoeCollector to Emitter Voltagev -02 0.1 -04 -05 -06 -07 -08 -09 -10 -11 VpE-Base to Emitter VoltageV DC CURRENT GAIN vs, BASE AND COLLECTOR SATURATION COLLECTOR CURRENT VOLTAGE vs. COLLECTOR CURRENT 1000 10 VcE=-10 V > . Ic=10-1 500 | _ c B Pulsed > & 5 Pulsed | @ ot s 200 &s _ So oc ~ 100 >. -1 BE (sat) CM 50 S5 -a5 2 Bo o uw 3 8 20 BS ~02 } Qo uw 10 $= on = ao | 5 oD 0.05 VCE(sat) uo ae 2 Wil 0.02 1 >> -0.01 2 0.1 -1 -10 100 1000 0.1 1 ~10 100 1000 ICollector CurrentmA ICollector CurrentmANEC 2SB805,2SB806 GAIN BANDWIDTH PRODUCT vs. EMITTER CURRENT 1000 VcE=10 V uo o 200 eb 2 o a oS e np ao o f7Gain Bandwidth Product -MHz oa 1 2 5 10 20 50 100 , Ig Emitter CurrentmA REFERENCE CobOutput CapacitancepF OUTPUT CAPACITANCE vs. REVERSE VOLTAGE 100 f=1.0 MHz 50 20 10 1 0.1-0.2 -05 -1 -2 5 10 -20 -50-100 VcogCollector to Base VoltageV Document Name Document No. NEC semiconductor device reliability/quality control system. TEI-1202 Quality grade on NEC semiconductor devices. 1E1-1209 Semiconductor device mounting technology manual. tE1-1207 1E1-1213 @ Semiconductor device package manual. Guide to quality assurance for semiconductor devices. MEI1-1202 Semiconductor selection guide. MF-1134NEC 2SB805,2SB806 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. , M4 92.6