Technische Information / Technical Information Dioden-Modul mit Chopper-IGBT Diode Module with Chopper-IGBT DD B6U 84 N 12...16 RR Elektrische Eigenschaften / Electrical properties Vorlaufige Daten Preliminary data Hochstzulassige Werte / Maximum rated values Netz-Diode / Rectifier diode Periodische Spitzensperrspannung repetitive peak reverse voltage VRRM Tvj = - 40C...Tvj max Durchlastrom-Grenzeffektivwert (pro Element) RMS forward current (per chip) 1200, 1400 1600 V 60 A Id 85 104 A A IFSM 650 550 A A IFRMSM Ausgangsstrom output current TC = 100C Stostrom-Grenzwert surge forward current Tvj = 25C, tS = 10ms Grenzlastintegral It-value Tvj = 25C, tS = 10ms TC = 84C Tvj = Tvj max, tp = 10ms It 2100 1500 As As Kollektor-Emitter-Sperrspannung collector-emitter voltage VCES 1200 V Kollektor-Dauergleichstrom DC-collector current IC 50 A Tvj = Tvj max, tp = 10ms IGBT Periodischer Kollektor-Spitzenstrom repetitive peak collektor current tp = 1ms ICRM 100 A Gesamt-Verlustleistung total power dissipation TC = 25C Ptot 350 W VGE 20 V IF 25 A tp = 1ms IFRM 50 A RMS, f = 50Hz, t = 1min VISOL 2,5 kV Durchlaspannung forward voltage Tvj = Tvj max, iF = 100A vF 1,55 V Schleusenspannung threshold voltage Tvj = Tvj max V(TO) 0,75 V Ersatzwiderstand forward slope resistance Tvj = Tvj max rT 5,5 m Sperrstrom reverse current Tvj = Tvj max,vR = VRRM iR 5 mA Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage Tvj = 25C, iC = 50A, vGE = 20V vCE sat Gate-Emitter-Schwellspannung gate-emitter threshold voltage Tvj = 25C, iC = 2mA, vGE = vCE Gate-Emitter Spitzenspannung gate-emitter peak voltage Schnelle Diode / Fast diode Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forward current Modul Isolations-Prufspannung insulation test voltage Charakteristische Werte / Characteristic values Netz-Diode / Rectifier diode min. typ. max. IGBT SDB-MA2; R. Jorke Tvj = 125C, iC = 50A, vGE = 20V 22. Jan 99 A 104/97 vGE(TO) 4,5 2,5 3,1 3,2 V 5,5 6,5 V Seite/page 1(3) Technische Information / Technical Information Dioden-Modul mit Chopper-IGBT Diode Module with Chopper-IGBT DD B6U 84 N 12...16 RR Vorlaufige Daten Preliminary data IGBT min. typ. max. Eingangskapazitat input capacitance Tvj = 25C, f0 = 1MHz, Kollektor-Emitter Reststrom collector-emitter cut-off current Tvj = 25C, vCE = 1200V, vGE = 0V Gate-Emitter Reststrom gate leakage current Tvj = 25C, vCE = 0V, vGE = 20V Emitter-Gate Reststrom gate-leakage current Cies 3,3 iCES 0,8 4,0 nF vCE = 25V, vGE = 0V 1 mA iGES 500 nA Tvj = 25C, vCE = 0V, vEG = 20V iEGS 500 nA Durchlaspannung forward voltage Tvj = 25C, iF = 25A vF 2,9 V Sperrverzogerungsladung recovered charge iFM = 25A, -di/dt = 800A/s, vR = 600V Tvj = 125C, vCE = 1200V, vGE = 0V Schnelle Diode / Fast diode Tvj = 125C, iF = 25A 2,3 1,8 Qr 2,3 6,0 Tvj = 25C Tvj = 125C As As Thermische Eigenschaften / Thermal properties Netz-Diode / Rectifier diode, = 120rect Innerer Warmewiderstand thermal resistance, junction to case RthJC max. 1,45 max. 0,38 max. 1,00 C/W C/W C/W RthCK max. 0,25 max. 0,24 max. 0,30 C/W C/W C/W Transistor / Transistor, DC Schnelle Diode / Fast diode, DC Ubergangs-Warmewiderstand thermal resistance, case to heatsink Netz-Diode / Rectifier diode Transistor / Transistor Schnelle Diode / Fast diode 150 C Tc op - 40...+150 C Tstg - 40...+150 C Hochstzulassige Sperrschichttemperatur max. junction temperature Tvj max Betriebstemperatur operating temperature Lagertemperatur storage temperature Mechanische Eigenschaften / Mechanical properties Gehause, siehe Anlage case, see appendix Seite 3 page 3 Innere Isolation internal insulation Al2O3 Anzugsdrehmoment fur mechanische Befestigung mounting torque Gewicht weight Toleranz / tolerance 15% M1 G Kriechstrecke creepage distance 4 typ. Nm 185 g 12,5 mm Kuhlkorper / heatsinks : Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. / This technical Information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. SDB-MA2; R. Jorke 22. Jan 99 Seite/page 2(3) Technische Information / Technical Information Dioden-Modul mit Chopper-IGBT Diode Module with Chopper-IGBT DD B6U 84 N 12...16 RR SDB-MA2; R. Jorke 22. Jan 99 Seite/page 3(3) Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. This Data Sheet is describing the specification of the products for which a warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its specifications. 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