QS6M4
Transistors
1/5
Small switching
QS6M4
zFeatures
1) The QS6M4 combines Pch T rench MOSFET with a
Nch T rench MOSFET in a single TSMT6 package.
2) Pch T rench MOSFET and Nch Trench MOSFET
have a low on-st ate resistance with a fast sw itching.
3) Pch T rench MOSFET is neucted a low voltage drive
(2.5V).
zApplic ations
Load switch, inverter
zExternal dimensions (Unit : mm)
Each lead has same dimensions
TSMT6
Abbreviated symbol : M04
0.16
0.85
2.9
2.8
1.6
0.4
(1)
(5)
(3)
(6)
(2)
(4)
1pin mark
zStructure
Silicon P-channel MOS FET
Silicon N-channel MOS FET
zPackaging specifications
Package
Code Taping
Basic ordering unit (pieces)
QS6M4
TR
3000
Type
zAbsolute maximum ratings (Ta=25°C)
Parameter
V
DSS
Symbol
V
GSS
I
D
I
DP
I
S
I
SP
P
D
°CTch °CTstg
Nchannel
150
−55 to +150
Pchannel
Limits Unit
∗ Pw≤10µs, Duty cycle≤1%
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
Continuous
Pulsed
ContinuousSource current
(Body diode) Pulsed
∗
V30 V12 A±1.5 A±6.0 A0.8 A6.0 W
−20
−12
±1.5
±6.0
−0.75
−6.0
1.25
∗
zEquivalent circuit
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Drain
(4) Tr2 (Pch) Source
(5) Tr2 (Pch) Gate
(6) Tr1 (Nch) Drain
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
∗2∗2
∗1
∗1
(1)
(6) (5) (4)
(2) (3)
zThermal resistance (Ta=25°C)
Rth (ch-a) 100
Parameter Symbol Limits Unit
Channel to ambient °C / W
QS6M4
Transistors
2/5
N-ch
zElectrical characteristics (Ta=25°C)
Parameter Symbol
IGSS
Yfs
Min.
−Typ. Max. Unit Conditions
V(BR) DSS
IDSS
VGS (th)
RDS (on)
C
iss
Coss
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
−10 µAV
GS=12V / VDS=0V
VDD 15V
30 −−VI
D=1mA / VGS=0V
−−1µAV
DS=30V / VGS=0V
0.5 −1.5 V VDS=10V / ID=1mA
−170 230 ID=1.5A / VGS=4.5V
−180 245 mΩID=1.5A / VGS=4.0V
−260 360 ID=1.0A / VGS=2.5V
1.0 −−SV
DS=10V / ID=1.0A
−80 −pF VDS=10V
−25
15 −pF VGS=0V
−7−pF f=1MHz
VGS=4.5V
RL=15Ω / RG=10Ω
−18 −ns
−15 −ns
−15 −ns
−1.6 −ns
−0.5 −nC
−0.9 −nC VGS=4.5V RL=10Ω
RG=10Ω
−−nC ID=1.5A
∗
∗
∗
∗
∗
∗
∗
∗
∗
ID=1A, VDD 15V
zBody diode characteristics (Source-Drain)
V
SD
−−1.2 V I
S
=3.2A / V
GS
=0V
Parameter Symbol Min. Typ. Max. Unit Conditions
∗
Forward voltage
∗Pulsed
QS6M4
Transistors
3/5
P-ch
zElectrical characteristics (Ta=25°C)
Parameter Symbol
IGSS
Yfs
Min.
−Typ. Max. Unit Conditions
V(BR) DSS
IDSS
VGS (th)
RDS (on)
C
iss
Coss
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
∗
∗
∗
∗
∗
∗
∗
∗
∗
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
−−10 µAV
GS= −12V / VDS=0V
VDD −15V
−20 −−VI
D= −1mA / VGS=0V
−−−1µAV
DS= −20V / VGS=0V
−0.7 −−2.0 V VDS= −10V / ID=−1mA
−155 215 ID= −1.5A / VGS= −4.5V
−170 235 mΩID= −1.5A / VGS= −4.0V
−310 430 ID= −0.75A / VGS= −2.5V
1.0 −−SV
DS= −10V / ID= −0.75A
−270 −pF VDS= −10V
−40
35 −pF VGS=0V
−10 −pF f=1MHz
VGS= −4.5V
RL=20Ω / RG=10Ω
−12 −ns
−45 −ns
−20 −ns
−3.0 −ns
−0.8 −nC
−0.85 −nC VGS= −4.5V
−−nC ID= −1.5A
ID= −0.75A, VDD −15V
RL=10Ω
RG=10Ω
zBody diode characteristics (Source-Drain)
V
SD
−−−1.2 V I
S
= −0.75A / V
GS
=0V
Parameter Symbol Min. Typ. Max. Unit Conditions
∗
Forward voltage
∗Pulsed
QS6M4
Transistors
4/5
N-ch
zElectrical characteristic curves
1
10
100
1000
0.01 0.1 1 10 100
DRAIN-SOURCE VOLTAGE : VDS (A)
CAPACITANCE : C (pF)
Ta=25°C
f=1MHz
V
GS
=0V
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
C
iss
C
oss
C
rss
1
10
100
1000
0.01 0.1 1 10
DRAIN CURRENT : ID (A)
SWITCHING TIME : t (ns)
Ta=25°C
V
DD
=15V
V
GS
=4.5V
R
G
=10Ω
Pulsed
Fig.2 Switching Characteristics
t
r
t
f
t
d (off)
t
d (on)
0 0.5 1.0 1.5 2.0
TOTAL GATE CHARGE : Qg (nC)
0
1
2
3
4
5
6
GATE-SOURCE VOLTAGE : VGS (V)
Ta=25°C
V
DD
=15V
I
D
=1.5A
R
G
=10Ω
Pulsed
Fig.3
Dynamic Input Characteristics
0.0 0.5 1.0 1.5 2.0 2.5
0.001
0.01
0.1
1
10
GATE-SOURCE VOLTAGE : VGS (V)
DRAIN CURRENT : ID (A)
Fig.4
Typical Transfer Characteristics
V
DS
=10V
Pulsed
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
0123456789
GATE-SOURCE VOLTAGE : VGS (V)
10
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
Ta=25°C
Pulsed
I
D
=0.75A
I
D
=1.5A
0.01
0.1
1
10
0.0 0.5 1.0 1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
SOURCE CURRENT : Is (A)
Fig.6 Source Current vs.
Source-Drain Voltage
V
GS
=0V
Pulsed
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
1
10
0.1
0.01 0.1 1 10
DRAIN CURRENT : I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on)
(mΩ)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
V
GS
=4.5V
Pulsed
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
1
10
0.1
0.01 0.1 1 10
DRAIN CURRENT : I
D
(A)
V
GS
=4.0V
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on)
(mΩ)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
1
10
0.1
0.01 0.1 1 10
V
GS
=2.5V
Pulsed
DRAIN CURRENT : I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on)
(mΩ)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙΙ)
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
QS6M4
Transistors
5/5
P-ch
zElectrical characteristic curves
10
100
1000
10
0.01 0.1 1 10 100
DRAIN-SOURCE VOLTAGE : −V
DS
(V)
CAPACITANCE : C (pF)
Ta=25°C
f=1MHz
V
GS
=0V
C
iss
C
rss
C
oss
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
1
10
100
1000
0.01 0.1 1 10
DRAIN CURRENT : −I
D
(A)
SWITCHING TIME : t (ns)
Ta=25°C
VDD= −15V
VGS= −4.5V
RG=10Ω
Pulsed
t
d (off)
t
d (on)
t
r
t
f
Fig.2 Switching Characteristics
Ta=25°C
VDD= −15V
ID= −1.5A
RG=10Ω
Pulsed
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
TOTAL GATE CHARGE : Qg (nC)
0
1
2
3
4
5
6
7
8
GATE-SOURCE VOLTAGE : −V
GS
(V)
Fig.3
Dynamic Input Characteristics
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
GATE-SOURCE VOLTAGE : −VGS (V)
0.001
0.01
0.1
1
10
DRAIN CURRENT : −ID (A)
V
DS
= −10V
Pulsed
Fig.4
Typical Transfer Characteristics
Ta=75°C
Ta= −25°C
Ta=25°C
Ta=125°C
024681012
GATE-SOURCE VOLTAGE : −V
GS
(V)
0
100
200
300
400
500
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on)
(mΩ)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
Ta=25°C
Pulsed
ID= −1.5A
ID= −0.75A
0.0 0.5 1.0 1.5 2.0
SOURCE-DRAIN VOLTAGE : −VSD (V)
0.01
0.1
1
10
SOURCE CURRENT : −IS (A)
Fig.6 Source Current vs.
Source-Drain Voltage
Ta=25°C
V
GS
=0V
Pulsed
10
100
1000
10000
DRAIN CURRENT : −I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on)
(mΩ)
0.1 1 10
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
V
GS
=
−
4.5V
Pulsed
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
10
100
1000
10000
0.1 1 10
DRAIN CURRENT : −I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on)
(mΩ)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
V
GS
=
−
4V
Pulsed
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
10
100
1000
10000
0.1 1 10
DRAIN CURRENT : −I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on)
(mΩ)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙΙ)
V
GS
=
−
2.5V
Pulsed
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
Appendix
Appendix1-Rev1.0
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
