DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N914; 1N914A; 1N914B High-speed diodes Product specification Supersedes data of 1999 May 26 2003 Jun 06 Philips Semiconductors Product specification High-speed diodes 1N914; 1N914A; 1N914B FEATURES DESCRIPTION * Hermetically sealed leaded glass SOD27 (DO-35) package The 1N914, 1N914A and 1N914B are high-speed switching diodes fabricated in planar technology, and encapsulated in a hermetically sealed leaded glass SOD27 (DO-35) package. * High switching speed: max. 4 ns * Continuous reverse voltage: max. 75 V * Repetitive peak reverse voltage: max. 100 V * Repetitive peak forward current: max. 225 mA. handbook, halfpage k a MAM246 APPLICATIONS * High-speed switching. The diode is type branded. The marking band indicates the cathode. Fig.1 Simplified outline (SOD27; DO-35) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage - 100 V VR continuous reverse voltage - 75 V IF continuous forward current - 75 mA IFRM repetitive peak forward current - 225 mA IFSM non-repetitive peak forward current t = 1 s - 4 A t = 1 ms - 1 A t=1s - 0.5 A - 250 mW see Fig.2; note 1 square wave; Tj = 25 C prior to surge; see Fig.4 Tamb = 25 C; note 1 Ptot total power dissipation Tstg storage temperature -65 +200 C Tj junction temperature - 175 C Note 1. Device mounted on an FR4 printed-circuit board; lead length 10 mm. 2003 Jun 06 2 Philips Semiconductors Product specification High-speed diodes 1N914; 1N914A; 1N914B ELECTRICAL CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL VF PARAMETER forward voltage MIN. MAX. UNIT see Fig.3 1N914; 1N914A IF = 10 mA - 1 V 1N914B IF = 5 mA 0.62 0.72 V IF = 100 mA - 1 V VR = 20 V - 25 nA VR = 75 V - 5 A VR = 20 V; Tj = 150 C - 50 A 1N914B IR CONDITIONS reverse current see Fig.5 Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 - 4 pF trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA; see Fig.7 - 8 ns when switched from IF = 10 mA to IR = 60 mA; RL = 100 ; measured at IR = 1 mA; see Fig.7 - 4 ns when switched from IF = 50 mA; tr = 20 ns; see Fig.8 - 2.5 V Vfr forward recovery voltage THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length 10 mm 240 K/W Rth j-a thermal resistance from junction to ambient lead length 10 mm; note 1 500 K/W Note 1. Device mounted on a printed-circuit board without metallization pad. 2003 Jun 06 3 Philips Semiconductors Product specification High-speed diodes 1N914; 1N914A; 1N914B GRAPHICAL DATA MGD289 100 MBG464 600 handbook, halfpage IF (mA) IF (mA) 400 (1) (2) (3) 50 200 0 0 100 o T amb ( C) 0 200 0 2 VF (V) (1) Tj = 175 C; typical values. (2) Tj = 25 C; typical values. (3) Tj = 25 C; maximum values. Device mounted on an FR4 printed-circuit board; lead length 10 mm. Fig.2 1 Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. MBG704 102 handbook, full pagewidth IFSM (A) 10 1 10-1 1 10 102 103 tp (s) Based on square wave currents. Tj = 25 C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 2003 Jun 06 4 104 Philips Semiconductors Product specification High-speed diodes 1N914; 1N914A; 1N914B MGD006 103 handbook, halfpage MGD004 1.2 handbook, halfpage IR (A) 10 Cd (pF) 2 1.0 (1) (2) (3) 10 0.8 1 0.6 10-1 10-2 0 100 Tj (oC) 0.4 200 0 (1) VR = 75 V; maximum values. (2) VR = 75 V; typical values. (3) VR = 20 V; typical values. f = 1 MHz; Tj = 25 C. Fig.5 Fig.6 Reverse current as a function of junction temperature. 2003 Jun 06 5 10 VR (V) 20 Diode capacitance as a function of reverse voltage; typical values. Philips Semiconductors Product specification High-speed diodes 1N914; 1N914A; 1N914B handbook, full pagewidth tr tp t D.U.T. 10% IF RS = 50 IF SAMPLING OSCILLOSCOPE t rr t R i = 50 V = VR I F x R S (1) 90% VR MGA881 input signal output signal (1) IR = 1 mA. Fig.7 Reverse recovery voltage test circuit and waveforms. I 1 k 450 V I 90% R S = 50 D.U.T. OSCILLOSCOPE V fr R i = 50 10% MGA882 t tr input signal Fig.8 Forward recovery voltage test circuit and waveforms. 2003 Jun 06 6 t tp output signal Philips Semiconductors Product specification High-speed diodes 1N914; 1N914A; 1N914B PACKAGE OUTLINE Hermetically sealed glass package; axial leaded; 2 leads SOD27 (1) b D G1 L L DIMENSIONS (mm are the original dimensions) G1 UNIT b max. D max. max. L min. mm 0.56 1.85 4.25 25.4 0 1 2 mm scale Note 1. The marking band indicates the cathode. REFERENCES OUTLINE VERSION IEC JEDEC EIAJ SOD27 A24 DO-35 SC-40 2003 Jun 06 7 EUROPEAN PROJECTION ISSUE DATE 97-06-09 Philips Semiconductors Product specification High-speed diodes 1N914; 1N914A; 1N914B DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 Jun 06 8 Philips Semiconductors Product specification High-speed diodes 1N914; 1N914A; 1N914B NOTES 2003 Jun 06 9 Philips Semiconductors Product specification High-speed diodes 1N914; 1N914A; 1N914B NOTES 2003 Jun 06 10 Philips Semiconductors Product specification High-speed diodes 1N914; 1N914A; 1N914B NOTES 2003 Jun 06 11 Philips Semiconductors - a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. SCA75 (c) Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/04/pp12 Date of release: 2003 Jun 06 Document order number: 9397 750 11511