DATA SH EET
Product specification
Supersedes data of 1999 May 26 2003 Jun 06
DISCRETE SEMICONDUCTORS
1N914; 1N914A; 1N914B
High-speed diodes
M3D176
2003 Jun 06 2
Philips Semiconductors Product specification
High-speed diodes 1N914; 1N914A; 1N914B
FEATURES
Hermetically sealed leaded glass
SOD27 (DO-35) package
High switching speed: max. 4 ns
Continuous reverse voltage:
max. 75 V
Repetitive peak reverse voltage:
max. 100 V
Repetitive peak forward current:
max. 225 mA.
APPLICATIONS
High-speed switching.
DESCRIPTION
The 1N914, 1N914A and 1N914B are high-speed switching diodes fabricated
in planar technology, and encapsulated in a hermetically sealed leaded glass
SOD27 (DO-35) package.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
The diode is type branded.
The marking band indicates the cathode.
handbook, halfpage
MAM246
ka
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board; lead length 10 mm.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage 100 V
VRcontinuous reverse voltage 75 V
IFcontinuous forward current see Fig.2; note 1 75 mA
IFRM repetitive peak forward current 225 mA
IFSM non-repetitive peak forward current square wave; Tj=25°C prior to
surge; see Fig.4
t=1µs4A
t=1ms 1A
t=1s 0.5 A
Ptot total power dissipation Tamb =25°C; note 1 250 mW
Tstg storage temperature 65 +200 °C
Tjjunction temperature 175 °C
2003 Jun 06 3
Philips Semiconductors Product specification
High-speed diodes 1N914; 1N914A; 1N914B
ELECTRICAL CHARACTERISTICS
Tj=25°C; unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board without metallization pad.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VFforward voltage see Fig.3
1N914; 1N914A IF=10mA 1V
1N914B IF= 5 mA 0.62 0.72 V
1N914B IF= 100 mA 1V
I
Rreverse current see Fig.5
VR=20V 25 nA
VR=75V 5µA
V
R= 20 V; Tj= 150 °C50 µA
Cddiode capacitance f = 1 MHz; VR= 0; see Fig.6 4pF
t
rr reverse recovery time when switched from IF= 10 mA to
IR= 10 mA; RL= 100 ; measured at
IR= 1 mA; see Fig.7
8ns
when switched from IF= 10 mA to
IR= 60 mA; RL= 100 ; measured at
IR= 1 mA; see Fig.7
4ns
V
fr forward recovery voltage when switched from IF=50mA;
t
r= 20 ns; see Fig.8 2.5 V
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-tp thermal resistance from junction to tie-point lead length 10 mm 240 K/W
Rth j-a thermal resistance from junction to ambient lead length 10 mm; note 1 500 K/W
2003 Jun 06 4
Philips Semiconductors Product specification
High-speed diodes 1N914; 1N914A; 1N914B
GRAPHICAL DATA
Fig.2 Maximum permissible continuous forward
current as a function of ambient
temperature.
0 200
100
0
50
MGD289
100
IF
(mA)
T ( C)
amb o
Device mounted on an FR4 printed-circuit board; lead length 10 mm.
Fig.3 Forward current as a function of forward
voltage.
(1) Tj= 175 °C; typical values.
(2) Tj=25°C; typical values.
(3) Tj=25°C; maximum values.
handbook, halfpage
012
600
0
200
400
MBG464
VF (V)
IF
(mA)
(1) (2) (3)
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents.
Tj=25°C prior to surge.
handbook, full pagewidth
MBG704
10 tp (µs)
1
IFSM
(A)
102
101104
102103
10
1
2003 Jun 06 5
Philips Semiconductors Product specification
High-speed diodes 1N914; 1N914A; 1N914B
Fig.5 Reverse current as a function of junction
temperature.
handbook, halfpage
0 100 Tj (oC) 200
103
102
101
102
10 (1) (2)
1
IR
(µA)
MGD006
(3)
(1) VR= 75 V; maximum values.
(2) VR= 75 V; typical values.
(3) VR= 20 V; typical values.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj=25°C.
handbook, halfpage
01020
1.2
1.0
0.6
0.4
0.8
MGD004
VR (V)
Cd
(pF)
2003 Jun 06 6
Philips Semiconductors Product specification
High-speed diodes 1N914; 1N914A; 1N914B
Fig.7 Reverse recovery voltage test circuit and waveforms.
handbook, full pagewidth
trr
(1)
IFt
output signal
trt
tp
10%
90%
VR
input signal
V = V I x R
RF S
R = 50
SIF
D.U.T.
R = 50
i
SAMPLING
OSCILLOSCOPE
MGA881
(1) IR= 1 mA.
Fig.8 Forward recovery voltage test circuit and waveforms.
trt
tp
10%
90%
I
input
signal
R = 50
S
I
R = 50
i
OSCILLOSCOPE
1 k 450
D.U.T.
MGA882
Vfr
t
output
signal
V
2003 Jun 06 7
Philips Semiconductors Product specification
High-speed diodes 1N914; 1N914A; 1N914B
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
Note
1. The marking band indicates the cathode.
SOD27 DO-35A24 SC-40 97-06-09
Hermetically sealed glass package; axial leaded; 2 leads SOD27
UNIT b
max.
mm 0.56
D
max. G1
max.
25.44.251.85
L
min.
DIMENSIONS (mm are the original dimensions)
G1
LD L
b
(1)
0 1 2 mm
scale
2003 Jun 06 8
Philips Semiconductors Product specification
High-speed diodes 1N914; 1N914A; 1N914B
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
LEVEL DATA SHEET
STATUS(1) PRODUCT
STATUS(2)(3) DEFINITION
I Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratany otherconditionsabove thosegivenin the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationor warrantythatsuchapplicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusing orsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
2003 Jun 06 9
Philips Semiconductors Product specification
High-speed diodes 1N914; 1N914A; 1N914B
NOTES
2003 Jun 06 10
Philips Semiconductors Product specification
High-speed diodes 1N914; 1N914A; 1N914B
NOTES
2003 Jun 06 11
Philips Semiconductors Product specification
High-speed diodes 1N914; 1N914A; 1N914B
NOTES
© Koninklijke Philips Electronics N.V. 2003 SCA75
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Printed in The Netherlands 613514/04/pp12 Date of release: 2003 Jun 06 Document order number: 9397 750 11511