Semiconductor Components Industries, LLC, 2012
February, 2012 − Rev. 4
1Publication Order Number:
MJB44H11/D
MJB44H11 (NPN),
NJVMJB44H11 (NPN),
MJB45H11 (PNP),
NJVMJB45H11 (PNP)
Complementary
Power Transistors
D2PAK for Surface Mount
Complementary power transistors are for general purpose power
amplification and switching such as output or driver stages in
applications such as switching regulators, converters and power
amplifiers.
Features
Low Collector−Emitter Saturation Voltage −
VCE(sat) = 1.0 V (Max) @ 8.0 A
Fast Switching Speeds
Complementary Pairs Simplifies Designs
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B > 8000 V
Machine Model, C > 400 V
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO 80 Vdc
Emitter−Base Voltage VEB 5 Vdc
Collector Current − Continuous
− Peak
IC10
20
Adc
Total Power Dissipation
@ TC = 25C
Derate above 25C
PD
50
1.67
W
W/C
Total Power Dissipation
@ TA = 25C
Derate above 25C
PD
2.0
0.016
W
W/C
Operating and Storage Junction
Temperature Range
TJ, Tstg −55 to 150 C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 2.5 C/W
Thermal Resistance, Junction−to−Ambient RqJA 75 C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Device Package Shipping†
ORDERING INFORMATION
MJB44H11 D2PAK 50 Units/Rail
MARKING
DIAGRAM
SILICON POWER
TRANSISTORS
10 AMPERES,
80 VOLTS, 50 WATTS
x = 4 or 5
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
MJB44H11T4 D2PAK 800/Tape & Reel
MJB45H11 D2PAK 50 Units/Rail
MJB45H11T4 D2PAK 800/Tape & Reel
http://onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MJB45H11T4G D2PAK
(Pb−Free)
800/Tape & Reel
MJB45H11G D2PAK
(Pb−Free)
50 Units/Rail
MJB44H11T4G D2PAK
(Pb−Free)
800/Tape & Reel
MJB44H11G D2PAK
(Pb−Free)
50 Units/Rail
D2PAK
CASE 418B
STYLE 1
B4xH11G
AYWW
NJVMJB44H11T4G D2PAK
(Pb−Free)
800/Tape & Reel
NJVMJB45H11T4G D2PAK
(Pb−Free)
800/Tape & Reel
MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (IC = 30 mA, IB = 0) VCEO(sus) 80 − − Vdc
Collector Cutoff Current (VCE = Rated VCEO, VBE = 0) ICES − − 10 mA
Emitter Cutoff Current (VEB = 5 Vdc) IEBO − − 50 mA
ON CHARACTERISTICS
Collector−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc) VCE(sat) − − 1.0 Vdc
Base−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) VBE(sat) − − 1.5 Vdc
DC Current Gain (VCE = 1 Vdc, IC = 2 Adc) hFE 60 − − −
DC Current Gain (VCE = 1 Vdc, IC = 4 Adc) 40 − −
DYNAMIC CHARACTERISTICS
Collector Capacitance (VCB = 10 Vdc, ftest = 1 MHz)
MJB44H11, NJVMJB44H11
MJB45H11, NJVMJB45H11
Ccb
−
−
130
230
−
−
pF
Gain Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz)
MJB44H11, NJVMJB44H11
MJB45H11, NJVMJB45H11
fT
−
−
50
40
−
−
MHz
SWITCHING TIMES
Delay and Rise Times(IC = 5 Adc, IB1 = 0.5 Adc)
MJB44H11, NJVMJB44H11
MJB45H11, NJVMJB45H11
td + tr
−
−
300
135
−
−
ns
Storage Time(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)
MJB44H11, NJVMJB44H11
MJB45H11, NJVMJB45H11
ts
−
−
500
500
−
−
ns
Fall Time(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)
MJB44H11, NJVMJB44H11
MJB45H11, NJVMJB45H11
tf
−
−
140
100
−
−
ns
Figure 1. Thermal Response
t, TIME (ms)
0.01
0.01 0.05 1.0 2.0 5.0 10 20 50 500 1.0 k0.1 0.50.2
1.0
0.2
0.1
0.05
r(t), TRANSIENT THERMAL
ZqJC(t) = r(t) RqJC
RqJC = 1.56C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.2
SINGLE PULSE
RESISTANCE (NORMALIZED)
0.5 D = 0.5
0.05
0.3
0.7
0.07
0.03
0.02
0.02 100 200
0.1
0.02
0.01
MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP)
http://onsemi.com
3
Figure 2. Maximum Rated Forward Bias
Safe Operating Area
100
1.0
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
5.0 10
TC 70 C
DUTY CYCLE 50%
IC, COLLECTOR CURRENT (AMPS)
2.0 3.0 20 30 50 100
1.0
7.0 70
1.0 ms
dc
0.1
0.2
0.3
0.5
2.0
3.0
5.0
10
20
30
50
10 ms
100 ms
1.0 ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on TJ(pk) = 150C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150C. TJ(pk) may be calculated from the data in
Figure 1. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
Figure 3. Power Derating
0
T, TEMPERATURE (C)
0
40 60 100 120 160
40
TC
20
60
PD, POWER DISSIPATION (WATTS)
0
2.0
TA
1.0
3.0
80 140
TC
TA
20
MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP)
http://onsemi.com
4
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
hFE, DC CURRENT GAIN
VCE = 4 V
TJ = 125C
25C
-40C
1000
0.1
Figure 4. MJB44H11 DC Current Gain
10 110
100
Figure 5. MJB45H11 DC Current Gain
Figure 6. MJB44H11 Current Gain
versus Temperature
Figure 7. MJB45H11 Current Gain
versus Temperature
IC/IB = 10
TJ = 25C
0.1
Figure 8. MJB44H11 On−Voltages
IC, COLLECTOR CURRENT (AMPS)
1
0.8
SATURATION VOLTAGE (VOLTS)
1.2
0.4
0
0.6
0.2
110
TJ = 25C
Figure 9. MJB45H11 On−Voltages
VCE = 1 V
IC/IB = 10
TJ = 25C
0.1
IC, COLLECTOR CURRENT (AMPS)
1
0.8
SATURATION VOLTAGE (VOLTS)
1.2
0.4
0
0.6
0.2
110
hFE, DC CURRENT GAIN
1000
0.1
10 110
100
VCE = 1 V
IC, COLLECTOR CURRENT (AMPS)
hFE, DC CURRENT GAIN
VCE = 4 V
1000
0.1
10 110
100
TJ = 25C
1 V
TJ = 125C
25C
-40C
hFE, DC CURRENT GAIN
1000
0.1
10 110
100
VCE = 1 V
VBE(sat)
VCE(sat)
VBE(sat)
VCE(sat)
MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP)
http://onsemi.com
5
PACKAGE DIMENSIONS
SEATING
PLANE
S
G
D
−T−
M
0.13 (0.005) T
231
4
3 PL
K
J
H
V
E
C
A
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.340 0.380 8.64 9.65
B0.380 0.405 9.65 10.29
C0.160 0.190 4.06 4.83
D0.020 0.035 0.51 0.89
E0.045 0.055 1.14 1.40
G0.100 BSC 2.54 BSC
H0.080 0.110 2.03 2.79
J0.018 0.025 0.46 0.64
K0.090 0.110 2.29 2.79
S0.575 0.625 14.60 15.88
V0.045 0.055 1.14 1.40
−B−
M
B
W
W
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
F0.310 0.350 7.87 8.89
L0.052 0.072 1.32 1.83
M0.280 0.320 7.11 8.13
N0.197 REF 5.00 REF
P0.079 REF 2.00 REF
R0.039 REF 0.99 REF
M
L
F
M
L
F
M
L
F
VARIABLE
CONFIGURATION
ZONE RN P
U
VIEW W−W VIEW W−W VIEW W−W
123
D2PAK 3
CASE 418B−04
ISSUE K
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
8.38
5.080
DIMENSIONS: MILLIMETERS
PITCH
2X
16.155
1.016
2X
10.49
3.504
MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP)
http://onsemi.com
6
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MJB44H11/D
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