1C2D05120E Rev. B
C2D05120E
Silicon Carbide Schottky Diode
Zero recovery® RectifieR
Features
• 1.2kVSchottkyRectier
• ZeroReverseRecoveryCurrent
• ZeroForwardRecoveryVoltage
• High-FrequencyOperation
• Temperature-IndependentSwitchingBehavior
• ExtremelyFastSwitching
• PositiveTemperatureCoefcientonVF
Benets
• ReplaceBipolarwithUnipolarRectiers
• EssentiallyNoSwitchingLosses
• HigherEfciency
• ReductionofHeatSinkRequirements
• ParallelDevicesWithoutThermalRunaway
Applications
• SwitchModePowerSupplies
• PowerFactorCorrection
• MotorDrives
• HighVoltageMultipliers
Package
TO-252-2
Maximum Ratings (TC=25°Cunlessotherwisespecied)
Symbol Parameter Value Unit Test Conditions Note
VRRM RepetitivePeakReverseVoltage 1200 V
VRSM SurgePeakReverseVoltage 1200 V
VDC DCBlockingVoltage 1200 V
IFContinuousForwardCurrent 17.5
8.5
5
A
TC=25˚C
TC=135˚C
TC=157˚C
IFRM RepetitivePeakForwardSurgeCurrent 30 A TC=25˚C,tP=10ms,HalfSineWave
IFSM Non-RepetitivePeakForwardSurgeCurrent 100 A TC=25˚C,tP=10µs,Pulse
Ptot PowerDissipation 136
59 WTC=25˚C
TC=110˚C
TJ,Tstg OperatingJunctionandStorageTemperature -55to
+175 ˚C
PIN1
PIN2 CASE
Part Number Package Marking
C2D05120E TO-252-2 C2D05120
VRRM = 1200 V
IF (TC=135˚C) =8.5A
Qc = 28nC