SANYO High-hep High Vepg Transistors Case outlines (unit:mn) ato Hi eh- NHFE, Hi gsh- VEBO Transi stors! Base SANYO: SMCP SANYO: MCP 9 2:Emitter 1:B, 2:E, 3:C. tg 3:Collector 075 Fi C 3 Features Applications 3 7H 4 ype * High hFE (500 to 3200) %* AF amp Aas ga Le * High VEBO 215V * Driver a Jo * Low saturation voltage (VCE(sat})S0. 5V) * Muting circuit at a ba * Very small package permitting audio/video sets to be made smaller, slimmer : r } re mle. fon cma _rr_\ A io ce WE SANYO: CP uth :Resistance-Contained (2SC4909:R1=47K 2, R2=47K 2 ) - * 1B, 2:6, 3:6. 3 S For PNP, (-) sign is omitted. % sign Tc=25C. wy sign Mounted on ceramic board (250mm'X0. 8mm). ry 61 Absolute Maximum Ratings/ Electrical Characteristics/Ta=25C 1 Type No. Package |Ta=*25C arp Toa Yepo|"czo|eso! 'c} Pc [vot hee T-] 1,],/E(sat ( ):Marking CE} C Cc} B tyf hax r on MCP, CP. Cv) | Cv} CDT CAD} ID | YD | (ma) (mA)|(oA)| (VY) [ i | 28C4919(DA) SMCP 25 15 5] 0.1] 0.15 2 5/800 ~ 3200 10 1 140 + 300 rid 9ANBOGPGEE 25A1813(KS) 30} 25{ 15/0.15[ 0.15] 5] 1/500 ~ 1200/ 50] 1[ 0.15: 0.3 sey as 28C04413(GY) MCP 60 50 15{ 0.1) 0,15 5 10/800 ~ 3200 50 1{ 0.1 0.5 TE | 2804851 (YT) 25 15 5| 0.1 0.2 2 5{800 ~ 3200] 10 1] 14m 30m i 25C4909(JN)O 25} 20 10{ 0.1 0.2 2 5| 200 2] 0.2) 10m + 30m p 2541434 (FL) 60} 50 15] 0.1 0.2 5 10/500 ~ 1200] 50 1] 0.2 0.5 J 28C3689 (GY) 800 ~ 3200 0.1 ; > 25A1814(KS) cP 30] 25] 15f0.15] 0.2[ 5{ 1/500 ~ 1200] 50] 1] 0.15} 0.3 be 28C3661(FY) 30 25 15] 0.3 0.2 5 10{800 ~ 3200] 200 4] 0.12 : 0.5 30 28C4852(T) 25, 15! 5] 0.1] 0.25] 2| 5/800 ~ 3200] 10] 1] 14m) 30m 2SA1766(AL) 30 25 0.3, 71.3 5 10}500 ~ 1200} 200 4] 0.12 : 0.5 - 28C3650(CF) 30{ 25 1.2/1.5. 5] 00/800 ~ 3200] S00 10] 0.121 0.5}, DCO SPA 28C3651 (CC) pcp [120 100 O.2[e1.3] 5{ 10/500 ~ 2000] 100] 2] 0.15 | 0.5 et, ervol lector, 3:Base 28C4390(CJ) 20 10 2(% 1.3 2{ 500/800 ~ 3200/1000] 20] 0.11: 0.3 pop rm 28C4705(CP) 60} 50 0.2/, 81.3 5} 100/800 ~ 3200; 100 2] 0.12 | pe} 28C5069(CU) 30} 25 2{ 1.5 5| 500/800 ~ 3200]1000| 20] 0.15: 7. * 8 2503576 spa |_30|_25 0.3] 0.3[ 5| 10/800 ~ 3200| 200] 4[ 0.12: btcbens = [B 28C3820 60 50 0.1 0.3 5 10/800 ~ 3200 50 1] 0.1 ANYO:NP Lo O4 Gee 28A1435 30} 25 0.3) 0.6 5] 10/500 ~ 1200] 200 4) 0.18 PORYOERPS -g - 1 28C3068 15 800 ~ 3200 0.12: 2SA1436 60 50 0.2 0.6 5 500 ~ 1200 0.2 2) 28C3069 NP 10/800 ~ 3200] 100 2{ 0.18 28A1437 120] 100 50m] 0.5 5 10/400 ~ 1000 10] 0.2] 0.18 : 283495 500 ~ 2000 0.1 25C4204 30| 25 0.7| 0.6 5| 50/800 ~ 3200} 500] 10] 0.15 2SA1562 TP 30] 25 1.2] %15 5] 100/500 ~ 1200] 500} 10) 0.1 28C5155 50{ 20 3| 3% 20 2| 500/800 ~ 3200|2000} 20] 0.15 28C3070 MP 30} 25 1,2 1 5} 500]800 ~ 3200] 500] 10] 0.12: 28C3071 120} 100 0.2 1 5 10]500 ~ 2000] 100 2] 0.15 : 2804736 FLP 80| 60 2 1.5 5] 500{800 ~ 3200}/1000| 20] 0.2 : ANY TP, 28C5070 30, 25 2 15 5| 500}800 ~ 3200/1000} 20] 0.15 1:Base, 2:ColleckaNti mitter, 2SA1692 30 25 2) #15 5| 100/500 ~ 1200/1000] 20) 0.15 4:Collector & 25C3807 TOs 6p 500/800 ~ 3200 + = 2SC3808 80 60 2| 15 5{| 500/800 ~ 3200/1000] 20] 0.2 t rp atc Hi @h-VEBO Tramsistors " ; Features SANYO: FLP * Highly resistant to surge voltage because of high VEBO. 1B, 2:C, 3:B = *Highly resistant to breakdown because of wide ASO. For PNP, (-) sign is omitted. 10. 4 P 2S8A1687(D) 60] 50 15]0.15) 0.15 6 1/135 ~ 600] 50 5) 0.25 28C4446(H) MCP 0.15 | 2SC4694 (WT) 50| 20] 25] 0.5| 0.15] 5] 10/300 ~ 1200] 100 0.12 Ty [2 2SA1252(D- ) 60 50 15]/0.15 0.2 6 1}100 ~ 560 50 0,2 os [t 28C3134(H-) cP 0.15 yo? 2 28C4695 (WT) 50 20 251 0.5] 0.25 5 10/300 ~ 1200; 100 2; 0.12 | 0.5 4] 2SA1253 SPA 60} 50 15] 0.2) 0.25 6 17100 ~ 560] 50 5} 0.2 i i 28(3135 0.15 ast {jes SANYO:10-1261P 2SA1246 60] 50| 15/0.15] 0.4] 6| 1/100 ~ 560| so] 5] - 1.0 ste 15.5 28C3114 NP - 28C3792 50; 20) 25] 0.5) 0.5 5 10/300 ~ 1200] 100 2} 0.12 These specifications are subject to change without notice SANYO Electric Co.,Ltd. Semiconductor Business Headquarters, TR Division. MT950123TR 47