AG CORP U7E Dm OO29426 O0097b7 T me BY 228/13 - BY 228/15 ? TELEFUNKEN electronic Creative Technologies Silicon Mesa Diodes Application: High voltage rectifier Features: @ Glass passivated junction Dimensions in mm 8<43 aios 6 Cathode 5135 JL i || | iT >26 <4,2 >26 Marking: By letters Absolute maximum ratings Surge reverse voltage Vaso Reverse voltage Va Surge forward current {,=10 ms lesna Average forward current leay Junction temperature LF Storage temperature range T, Maximum thermal resistance Junction ambient on PC board with spacing 37.5 mm A, Characteristics = 25 C, unless otherwise specified Forward voltage L=5A V, Reverse current V,z=1000V BY 228/13 Va=1200V BY 228/15 I f T=140C, V,=1000V BY 228/13 /, V,=1200V BY 228/15 /, Total reverse recovery time -d, p= 1A, 7-=0.05 Aus t T.1.2/926.0588 E T-0l- 1S @ Hermetically sealed package BY 228/13 1300 1000 50 3 140 65...4175 70 Min. Typ. 2 2 Sintered glass case SOD 64 Weight max. 1.0 g BY 228/15 1500 1200 Max. 1.5 140 140 20 << 83S p> > pA HA pA pA us 57 ane mh teeta ao os ot eternaAE G CORP 476 ) mm OO2942b 0009768 1 a BY 228/13 - BY 228/15 T-Orls Scattering limit 0.8 1.6 24V Vie oi Epoxy glass hard tissue, board thickness: 1.5mm RinJAS 70 K/W Fig.3 ae257se 58 as6973 @ a pA Scattering fimit 10 0 Fig.2 0 50 150 C j~ \ 861387 @ RehJA 30 T= constant K/W 20 10 fey, sg eR At join hearse Both series Caden titer et , set seals wad