BEAM LEAD MIS CAPACITORS Ls mae A= CORPORATION FEATURES e Dual Insulating Layer (Nitride-Oxide) for Maximum Reliability e Rugged Beam Leads Low Loss ~ Typically 0.04 dB ina 50 Ohm System e Low Temperature Coefficient TYPES e MBC 50 SERIES DESCRIPTION MIS (Metal - Insulating Layer - Silicon) Beam Lead Capacitors are devices which have very high Q and small size for use in microwave hybrid circuit applications. Rugged beam lead construction provides ease in mounting in hybrid circuits. The dielectric layer is composed of a thermally grown silicon dioxide over which a thicker layer of silicon nitride is deposited. The end result is a capacitor having a thin, high breakdown dielec- tric resulting in a high capacitance per unit area. This dual insulating layer exhibits a low temper- ature coefficient, very high insulation resistance and much lower insertion loss at microwave fre- quencies than porcelain capacitors. These MIS devices (sometimes referred to as MNOS) exhibit long term stability under bias conditions at high temperatures (as compared to the earlier MOS technology) making them suifable for high reliability applications. A unique construction technique precludes shorting of the beams to the silicon die edge. Custom parts can be supplied with different capacitance values and tolerances. APPLICATIONS MIS Beam Lead Capacitors provide much improv- ed performance over other types in hybrid micro- wave circuits. They provide very low loss in microwave circuits, typically less than 0.06 cB at 18 GHz. They can also be used as tuning elements in various filters and matching networks, as DC blocking, and also bypass capacitors. Switch and comb generator performance is significantly im- proved using them. There are no resonance prob- lems associated with MIS devices. ELECTRICAL CHARACTERISTICS CapacitanceRange........... 1 to 15 pF Operating Temperature... . 65C to + 200C Temperature Coefficient. . . . 50 PPM/C Typical Dielectric Withstanding Voltage ....... 50V Insulation Resistance . . . . 106 Megohms Typical TYPICAL INSERTION LOSS vs. FREQUENCY (10 pF) 10 .08 06 04 a at 02 INSERTION LOSS (dB) 2 4 6 8 10 12 14 16 18State-of-the-Art Microwave Diodes ELECTRICAL CHARACTERISTICS AT 25C Capacitance Dielectric Part (pF) Withstanding Number + 20% (1,2) Voltage 1 MHz (VOLTS) MBC 50-1B12 1.0 50 MBC 50-2812 2.0 50 MBC 50-3B12 3.0 50 MBC 50-4B12 4.0 50 MBC 50-6B12 6.0 50 MBC 50-8B12 8.0 50 MBC 50-10B12 10.0 50 MBC 50-15B12 15.0 50 MBC 50-20B12 22.0 50 MBC 50-33B13 33.0 50 MBC 50-47B13 47.0 50 MBC 50-68B13 68.0 50 MBC 50-82B13 82.0 50 MBC 50-100B13 100.0 50 (1) Other Tolerances Available. (2) Other Values Available. NOTE: Dimensions in inches, Millimeters in parentheses OUTLINE DRAWINGS B12 GOLD LEAD BOTH ENDS SILICON DIE 1 MiL CHAMFER (INDICATES .0002/.0005 0037 (.094) THICKNESS TOP SIDE OF nek MAX CAPACITOR) + + , I 1 | 1 910425 I 1 010 25) 7 943 (33) MAX \ 1.008 (.20) I I .015 (.38) .008 (.20) MAX MIN .038 (.96) 034 (.86) ! .060 (1.27) 065 (1.65) s Ss Zz as (14) [SZ SILICON DIE "10 SI oma 2 S| .0037 (.094) THICKNESS So So io MAX MAX | 022 (.56 [or (48) 045 (1.14) : 975 Stewart Avenue Sunnyvale, California 94086 * 408-737-8181 PART NUMBER INFORMATION MBC 50 10 B12 | | ~L_ outline 10 pF Nominal Value Dielectric Withstanding Voltage, 50 V Metelics Beam Capacitor HANDLING AND BONDING HANDLING Metelics beam lead devices are designed to have exceptional lead strength. However, they are very small and require special handling to assure that the devices are not mechanically or electrically damaged. Beam lead devices can be picked up with a very small vacuum pencil or a sharpened wooden stick such as a @-tip dipped in isopropyl alcohol. BONDING (Soldering not recommended) Thermocompression bonding with a heated wedge or parallel gap welding can be used to bond beam lead devices to substrates. In either case, the device is positioned face down with the beam leads flat on the substrate mefallized con- tact areas and then the beams are bonded to the metallization on the substrate. Care must be taken not to damage the beam-glass interface with too much lateral stress or by bonding too close to the chip. Any cracking caused in the glass can put stress on the diode junction at the glass-silicon interface causing damage to the junction, usually in the form of a lower resistance. It is not recom- mended to mount beam lead devices on a soft substrate (such as TFG board) as temperature variations can cause excessive expansion or con- traction resulting in breakage of the beam lead device. If this is attempted, considerable stress relief must be allowed in the beam lead. FAX: 408-733-7645 Date: 4-25-89