2SA1415 / 2SC3645 Ordering number : EN1720B PNP / NPN Epitaxial Planar Silicon Transistors 2SA1415 / 2SC3645 High-Voltage Switching, Predriver Applications Features * * * * * Adoption of FBET process. High breakdown voltage (VCEO=160V). Excellent linearity of hFE and small Cob. Fast switching speed. Ultrasmall size marking it easy to provide high-density,small-sized hybrid ICs. Specifications ( ) : 2SA1415 Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Symbol Conditions Ratings Unit (--)180 Collector-to-Emitter Voltage VCBO VCEO (--)160 V Emitter-to-Base Voltage VEBO (--)5 V Collector Current Collector Current (Pulse) IC ICP Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg (--)140 Moutned on ceramic board (250mm20.8mm) V mA (--)200 mA 500 mW 1.3 W 150 C --55 to +150 C Marking : 2SA1415 : AA, 2SC3645: CA (c) 2011, SCILLC. All rights reserved. Jan-2011, Rev. 0 www.onsemi.com Rev.0 I Page 1 of 5 I www.onsemi.com Publication Order Number: 2SA1415_2SC3645/D 2SA1415 / 2SC3645 Electrical Characteristics at Ta=25C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current ICBO IEBO VCB=(--)80V, IE=0A VEB=(--)4V, IC=0A DC Current Gain hFE Gain-Bandwidth Product fT Cob VCE=(--)5V, IC=(--)10mA VCE=(--)10V, IC=(--)10mA Output Capacitance Collector-to-Emitter Saturation Voltage Strage Time Fall Time min typ Unit max (--)100 nA (--)100 nA 140* 400* 150 VCB=(--)10V, f=1MHz IC=(--)50mA, IB=(--)5mA VCE(sat) ton Turn-ON Time Ratings Conditions MHz (4.0)3.0 (--0.14)0.07 See sepcified Test Circuit. pF (--0.4)0.3 V 0.1 s tstg See sepcified Test Circuit. 1.5 s tf See sepcified Test Circuit. 0.1 s * : The 2SA1415/2SC3645 are classified by 10mA hFE as follows : Rank S T hFE 140 to 280 200 to 400 Package Dimensions Switching Time Test Circuit unit : mm (typ) 7007A-004 IB1 Top View 3k 4.5 IB2 OUT IN 1.6 1.5 2k 5k 2.5 1.0 4.0 50 + + 1F 1F 20V --2V 1 2 3 0.4 IC=10IB1=--10IB2=10mA 0.4 For PNP, the polarity is reversed. 0.5 1.5 3.0 0.75 1 : Base 2 : Collector 3 : Emitter SANYO : PCP Bottom View IC -- VCE --140 IC -- VCE 140 2SA1415 120 --0.5 mA mA --0.4 --100 A --0.3m --80 --0.2mA --60 --40 --0.1mA 2SC3645 A 0.4m 100 0.3mA 80 0.2mA 60 40 0.1mA 20 --20 0 0 0.6 mA A 6m . --0 Collector Current, IC -- mA Collector Current, IC -- mA --120 0.5 mA IB=0mA --10 --20 --30 --40 --50 --60 Collector-to-Emitter Voltage, VCE -- V --70 0 IB=0mA 0 ITR03510 Rev.0 I Page 2 of 5 I www.onsemi.com 10 20 30 40 50 60 Collector-to-Emitter Voltage, VCE -- V 70 ITR03511 2SA1415 / 2SC3645 IC -- VBE --140 IC -- VBE 140 2SC3645 2SA1415 120 Collector Current, IC -- mA Collector Current, IC -- mA --120 --100 --80 --60 --40 --20 --0.2 --0.4 --0.6 --0.8 Base-to-Emitter Voltage, VBE -- V 40 5 DC Current Gain, hFE 7 5 100 7 5 2 7 --100 100 7 5 3 2 --1.0 2 3 2 3 5 5 7 --10 Collector Current, IC -- mA 7 --100 2 10 7 5 3 2 1.0 --1.0 2 2 3 5 7 --10 2 3 5 7 --100 Collector-to-Base Voltage, VCB -- V ITR03518 7 2 10 3 5 7 100 2 ITR03515 100 7 5 3 2 2 3 5 7 2 10 3 5 Collector Current, IC -- mA 7 100 2 ITR03517 Cob -- VCB 100 3 5 f T -- IC 10 1.0 2 2SC3645 f=1MHz 7 Output Capacitance, Cob -- pF 5 3 2SC3645 VCE=10V ITR03516 2SA1415 f=1MHz 7 2 7 1.0 3 Cob -- VCB 100 5 Collector Current, IC -- mA Gain-Bandwidth Product, f T -- MHz 2SA1415 VCE=--10V 2 10 10 2 ITR03514 f T -- IC 3 2SC3645 VCE=5V 2 3 3 5 7 --10 2 3 5 Collector Current, IC -- mA 1.0 ITR03513 3 2 2 0.8 hFE -- IC 3 --1.0 0.6 5 100 7 0.4 Base-to-Emitter Voltage, VBE -- V 7 2 5 0.2 1000 3 10 0 ITR03512 2SA1415 VCE=--5V 7 DC Current Gain, hFE 60 0 --1.0 hFE -- IC 1000 Gain-Bandwidth Product, f T -- MHz 80 20 0 0 Output Capacitance, Cob -- pF 100 5 3 2 10 7 5 3 2 1.0 1.0 Rev.0 I Page 3 of 5 I www.onsemi.com 2 3 5 7 10 2 3 Collector-to-Base Voltage, VCB -- V 5 7 100 ITR03519 2SA1415 / 2SC3645 VCE(sat) -- IC --1.0 5 3 2 --0.1 7 5 5 3 2 0.1 7 5 3 3 5 7 2 --1.0 3 2 3 5 --10 Collector Current, IC -- mA 5 7 7 --100 2 2 2 --1.0 7 5 7 2 --1.0 3 5 7 2 3 5 --10 Collector Current, IC -- mA 7 --100 op era 3 tio n 2 10 7 5 Ta=25C Single pulse For PNP, minus sign is omitted. Mounted on ceramic board (250mm20.8mm) 3 2 1.0 1.0 2 3 5 7 2 10 3 5 7 5 5 7 1.0 7 100 60 80 2 3 0 0 IT13954 Collector Dissipation, PC -- W sin 100 120 7 100 2 ITR03071 0.4 0.1 40 5 0.6 he Ambient Temperature, Ta -- C 3 0.8 k 20 2 1.0 0.2 0 10 1.3 0.4 0 7 1.2 0.5 at 5 2SA1415 / 2SC3645 Mounted on ceramic board (250mm20.8mm) 2SA1415 / 2SC3645 No 3 PC -- Ta PC -- Ta 0.3 2 0.2 Collector-to-Emitter Voltage, VCE -- V 0.6 7 100 2 ITR03521 1.0 Collector Current, IC -- mA Collector Dissipation, PC -- W Collector Current, IC -- mA s s DC 1m 0m 5 2 1.4 10 3 3 1.6 IC=140mA 100 7 5 2 2SC3645 IC / IB=10 ITR03522 ICP=200mA 2 7 10 VCE(sat) -- IC 2SA1415 / 2SC3645 3 5 5 3 2 ASO 5 3 Collector Current, IC -- mA Base-to-Emitter Saturation Voltage, VCE(sat) -- V 3 5 2 7 5 3 7 1.0 10 2SA1415 IC / IB=10 7 5 ITR03520 VBE(sat) -- IC --10 Base-to-Emitter Saturation Voltage, VCE(sat) -- V 2SC3645 IC / IB=10 7 7 2 VCE(sat) -- IC 1.0 2SA1415 IC / IB=10 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 140 160 IT13956 Rev.0 I Page 4 of 5 I www.onsemi.com 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT13955 2SA1415 / 2SC3645 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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