Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
SFT2369A2 __ __
Screening 2/ __ = Commercial
TX = TX Level
TXV = TXV Level
S = S Level
Package GW = Gullwing
SFT2369A2
Series
Dual Microminiature Package
100 mA 15 Volts
Dual NPN Transistor
Features:
High S peed S wi tchi ng Transistor
Sui tabl e in chopper , uhf and rf applicat ion
Multiple Devices Reduce Board Space
Replac ement for 2N2369A U
TX, TXV, S- Level scr eening availabl e
Maximum Rati ngs Symbol Value Units
Collector – Emitter Voltage V
CEO 15 Volts
Collector – Base Voltage V
CBO 40 Volts
Emitter – Base Voltage V
EBO 4.5 Volts
Continues Collector Current I
C 100 mAmps
Power Dissipation @ Ta = 25ºC Per Device
Total PD 360
500 mW
Operating & Storage Temperature Top & Tstg -65 to +200 ºC
Maximum Thermal Resistance (Junction to PCB) R
θJ
-
PCB
290 ºC/W
Gullwing (GW)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0045A
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFT2369A2
Series
Electrical Characteri st ic 4/ Symbol Min Max Units
Collector – Emitter Sustaining Voltage IC = 10 mA BVCEO 15 –– Volts
Collector Cutoff Current Vce = 20 V, ICES –– 400 nA
Collector Cutoff Current
Vcb = 32 V
Vcb = 40 V
Vcb = 20 V, Ta = 150 ºC
ICBO ––
200
10
30
nA
µA
µA
Emitter Cutoff Current Veb = 4.0 V
Veb = 4.5 V IEBO –– 250
10
nA
uA
DC Forward Current Transfer Ratio * VCE = 0.35V, IC = 10 mA
VCE = 0.40V, IC = 30 mA
VCE = 1.0V, IC = 10 mA
VCE = 1.0V, IC = 100 mA
Vce = 1.0V, Ic = 10 mA, Ta= -55 ºC
HFE
40
30
40
20
20
120
120
120
120
––
Collector – Emitter Saturation Voltage *
IC = 10mA, IB = 1.0mA
IC = 30mA, IB = 3.0mA
IC = 100mA, IB = 10mA
IC = 10mA, IB = 1.0mA, Ta= 125 ºC
VCE(Sat)
––
––
––
––
0.20
0.25
0.45
0.30
Volts
Base – Emitter Saturation Voltage *
IC = 10mA, IB = 1.0mA
IC = 30mA, IB = 3.0mA
IC = 100mA, IB = 10mA
IC = 10mA, IB = 1.0mA, Ta= -55 ºC
IC = 10mA, IB = 1.0mA, Ta= 125 ºC
VBE(Sat)
0.7
––
0.8
––
0.59
0.85
0.9
1.2
1.02
––
Volts
Frequency Transition VCE = 10V, IC = 10mA fT 500 1000 MHz
Output Capacitance VCE = 5V, f = 1MHz cob –– 4.0 pF
Input Capacitance VCE = 0.5V, f = 1MHz cib –– 5.0 pF
Switch Times
Test Circuit per MIL-PRF-19500/317
ton
toff
ts
––
––
12
18
13
nsec
NOTES:
* Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%
1/ For Ordering Information, Price, and Availability Contact
Factory.
2/ Screening per MIL-PRF-19500
3/ For Package Outlines Contact Factory.
4/ Unless Otherwise Specified, All Electrical Characteristics
@25ºC.
Available Part Numbers:
SFT2369A2GW
PIN ASSIGNMENT
Package Pin 1 Pin 2 Pin 3 Pin 4 Pin 5 Pin 6
GW Collector1 Base1 Emitter1 Collector2 Base2 Emitter2