APM1102PF P-Channel Enhancement Mode MOSFET Features * Pin Description SD -100V/-30A, G RDS(ON)=33m (Typ.) @ VGS=-10V RDS(ON)=39m (Typ.) @ VGS=-4.5V * * Reliable and Rugged Top View of TO-220 Lead Free and Green Devices Available (RoHS Compliant) S Applications G * Power Management in DC/DC Converters and Battery Powered System D P-Channel MOSFET Ordering and Marking Information Package Code F : TO-220 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TU : Tube Assembly Material G : Halogen and Lead Free Device APM1102P Assembly Material Handling Code Temperature Range Package Code APM1102P F : APM1102P XXXXX XXXXX - Date Code Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines "Green" to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2009 1 www.anpec.com.tw APM1102PF Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25C Unless Otherwise Noted) VDSS Drain-Source Voltage -100 VGSS Gate-Source Voltage 25 Maximum Junction Temperature 150 C -55 to 150 C -10 A TJ TSTG Storage Temperature Range IS Diode Continuous Forward Current IDP 300s Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation TC=25C -120 TC=100C -72 TC=25C -30 TC=100C -18 TC=25C 62.5 TC=100C 25 RJC Thermal Resistance-Junction to Case RJA Thermal Resistance-Junction to Ambient 62.5 EAS Drain-Source Avalanche Energy, L=0.5mH 150 Electrical Characteristics Symbol V A A W 2 C/W mJ (TA = 25C Unless Otherwise Noted) Parameter Test Conditions APM1102PF Unit Min. Typ. Max. -100 - - - - -1 - - -30 -1.5 -2.2 -3 V nA Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) a VGS=0V, IDS=-250A VDS=-80V, VGS=0V TJ=85C V A Gate Threshold Voltage VDS=VGS, IDS=-250A Gate Leakage Current VGS=25V, VDS=0V - - 100 VGS=-10V, IDS=-20A - 33 42 VGS=-4.5V, IDS=-10A - 39 52 ISD=-10A, VGS=0V - -0.8 -1.1 V - 41 - ns - 73 - nC Drain-Source On-state Resistance m Diode Characteristics a VSD trr Qrr Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2009 IDS=-20A, dlSD/dt=100A/s 2 www.anpec.com.tw APM1102PF Electrical Characteristics (Cont.) Symbol Parameter Dynamic Characteristics Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=-30V, Frequency=1.0MHz VDD=-30V, RL=30, IDS=-1A, VGEN=-10V, RG=6 Turn-off Fall Time Gate Charge Characteristics Qg Test Conditions APM1102PF Min. Typ. Max. - 3.4 - - 3250 - - 310 - - 180 - - 13 24 - 7 14 - 108 195 - 46 84 - 76.4 - - 13.6 - - 18.5 - Unit b RG tf (TA = 25C Unless Otherwise Noted) pF ns b Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=-50V, VGS=-10V, IDS=-20A nC Note a : Pulse test ; pulse width300s, duty cycle2%. Note b : Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2009 3 www.anpec.com.tw APM1102PF Typical Operating Characteristics Power Dissipation Drain Current 35 60 30 ID - Drain Current (A) 70 Ptot - Power (W) 50 40 30 20 10 25 20 15 10 5 o 0 o TC=25 C 0 20 40 60 0 80 100 120 140 160 TC=25 C,VG=-10V 0 20 Tj - Junction Temperature (C) Normalized Transient Thermal Resistance Rd s(o n) Lim it ID - Drain Current (A) 100 10ms 100ms 1s DC o TC=25 C 0.1 0.1 1 10 100 120 140 160 2 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 1E-3 1E-4 100 300 Mounted on minimum pad o RJA :62.5 C/W 1E-3 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2009 80 Thermal Transient Impedance 200 1 60 Tj - Junction Temperature (C) Safe Operation Area 10 40 4 www.anpec.com.tw APM1102PF Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 60 60 VGS= -4.5,-5,-,6,-7,-8,-9,-10V 55 RDS(ON) - On - Resistance (m) ID - Drain Current (A) 50 -4V 40 30 -3.5V 20 10 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VGS=4.5V 45 40 VGS=10V 35 30 25 -3V 0 0.0 50 20 4.0 0 10 20 30 40 VDS - Drain - Source Voltage (V) ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage 80 1.6 1.4 70 VGS - Gate-source Voltage (V) RDS(ON) - On - Resistance (m) 60 IDS= -250A IDS=-20A 60 50 40 30 20 50 1.2 1.0 0.8 0.6 0.4 2 3 4 5 6 7 8 9 0.2 -50 -25 10 VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2009 0 25 50 75 100 125 150 Tj - Junction Temperature (C) 5 www.anpec.com.tw APM1102PF Typical Operating Characteristics (Cont.) Source-Drain Diode Forward Drain-Source On Resistance 60 2.0 VGS = -10V IDS = -20A 1.6 IS - Source Current (A) Normalized On Resistance 1.8 1.4 1.2 1.0 0.8 10 o Tj=150 C o Tj=25 C 1 0.6 0.4 o 0.2 -50 -25 RON@Tj=25 C: 33m 0 25 50 0.1 0.0 75 100 125 150 0.6 0.8 1.0 1.2 VSD - Source - Drain Voltage (V) Capacitance Gate Charge 1.4 10 VDS= -50V Frequency=1MHz 9 3500 VGS - Gate-Source Voltage (V) 4000 C - Capacitance (pF) 0.4 Tj - Junction Temperature (C) 4500 Ciss 3000 2500 2000 1500 1000 Coss 500 0 0.2 5 8 7 6 5 4 3 2 1 Crss 0 0 10 15 20 IDS = -20A 25 30 35 40 VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2009 0 10 20 30 40 50 60 70 80 QG - Gate Charge (nC) 6 www.anpec.com.tw APM1102PF Package Information TO-220 E A E2 A1 E1 H1 Q E/2 L L1 D1 D D2 P b e A2 c b2 S Y M B O L A MIN. 3.56 MAX. 4.83 MIN. 0.140 MAX. 0.190 A1 0.51 1.40 0.020 0.055 A2 2.03 2.92 0.080 0.115 b 0.38 1.02 0.015 0.040 b2 1.14 1.78 0.045 0.070 c D 0.36 0.61 0.014 0.024 16.51 0.560 0.650 D1 14.22 8.38 0.355 D2 12.19 9.02 12.88 0.330 0.480 0.507 E 9.65 10.67 0.380 0.420 E1 6.86 8.89 0.270 0.350 TO-220 MILLIMETERS INCHES 0.030 0.76 E2 e 2.54 BSC 0.100 BSC H1 5.84 6.86 0.230 0.270 L 12.70 14.73 0.500 0.580 0.250 6.35 L1 P 3.53 4.09 0.139 0.161 Q 2.54 3.43 0.100 0.135 Note: Follow JEDEC TO-220 AB. Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2009 7 www.anpec.com.tw APM1102PF Classification Profile Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 C 150 C 60-120 seconds 150 C 200 C 60-120 seconds 3 C/second max. 3C/second max. 183 C 60-150 seconds 217 C 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 Time (tP)** within 5C of the specified classification temperature (Tc) 20** seconds 30** seconds Average ramp-down rate (Tp to Tsmax) 6 C/second max. 6 C/second max. 6 minutes max. 8 minutes max. Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmax to TP) Liquidous temperature (TL) Time at liquidous (tL) Peak (Tp)* package body Temperature Time 25C to peak temperature * Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2009 8 www.anpec.com.tw APM1102PF Classification Reflow Profiles (Cont.) Table 1. SnPb Eutectic Process - Classification Temperatures (Tc) 3 Package Volume mm Thickness <350 <2.5 mm 235 C 2.5 mm Volume mm 350 220 C 220 C 3 220 C Table 2. Pb-free Process - Classification Temperatures (Tc) Package Thickness <1.6 mm 1.6 mm - 2.5 mm 2.5 mm Volume mm <350 260 C 260 C 250 C 3 3 Volume mm 350-2000 260 C 250 C 245 C Volume mm >2000 260 C 245 C 245 C 3 Reliability Test Program Test item SOLDERABILITY HOLT PCT TCT Method JESD-22, B102 JESD-22, A108 JESD-22, A102 JESD-22, A104 Description 5 Sec, 245C 1000 Hrs, Bias @ 125C 168 Hrs, 100%RH, 2atm, 121C 500 Cycles, -65C~150C Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 2F, No. 11, Lane 218, Sec 2 Jhongsing Rd., Sindain City, Taipei County 23146, Taiwan Tel : 886-2-2910-3838 Fax : 886-2-2917-3838 Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2009 9 www.anpec.com.tw