APM1102PFC-TUG - Anpec Electronics Corp.

P-Channel Enhancement Mode MOSFET

Rev. A.2 - May., 2009 www.anpec.com.tw1

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise

customers to obtain the latest version of relevant information to verify before placing orders.

APM1102PF

Pin Description

Ordering and Marking Information

Features

Applications

• -100V/-30A,

RDS(ON)=33mΩ (Typ.) @ VGS=-10V

RDS(ON)=39mΩ (Typ.) @ VGS=-4.5V

• Reliable and Rugged

• Lead Free and Green Devices Available

(RoHS Compliant)

Top View of TO-220

P-Channel MOSFET

Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-

tion finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements

of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to

mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous

material and total of Br and Cl does not exceed 1500ppm by weight).

SDG

APM1102P

Handling Code

Temperature Range

Package Code

F : TO-220

Operating Junction Temperature Range

C : -55 to 150 oC

Handling Code

TU : Tube

Assembly Material

G : Halogen and Lead Free Device

APM1102P F : APM1102P

XXXXX XXXXX - Date Code

Assembly Material

• Power Management in DC/DC Converters and

Battery Powered System

Rev. A.2 - May., 2009 www.anpec.com.tw2

APM1102PF

Absolute Maximum Ratings

Symbol

Parameter Rating Unit

Common Ratings (TA=25°C Unless Otherwise Noted)

VDSS Drain-Source Voltage -100

VGSS Gate-Source Voltage ±25 V

TJ Maximum Junction Temperature 150 °C

TSTG Storage Temperature Range -55 to 150 °C

IS Diode Continuous Forward Current -10 A

TC=25°C -120

IDP 300µs Pulse Drain Current Tested TC=100°C -72 A

TC=25°C -30

ID Continuous Drain Current TC=100°C -18 A

TC=25°C 62.5

PD Maximum Power Dissipation TC=100°C 25 W

RθJC Thermal Resistance-Junction to Case 2

RθJA Thermal Resistance-Junction to Ambient 62.5 °C/W

EAS Drain-Source Avalanche Energy, L=0.5mH 150 mJ

Electrical Characteristics (TA = 25°C Unless Otherwise Noted)

APM1102PF

Symbol

Parameter Test Conditions Min.

Typ.

Max.

Unit

Static Characteristics

BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA -100

- - V

VDS=-80V, VGS=0V - - -1

IDSS Zero Gate Voltage Drain Current

TJ=85°C

- - -30 µA

VGS(th) Gate Threshold Voltage VDS=VGS, IDS=-250µA -1.5

-2.2

-3 V

IGSS Gate Leakage Current VGS=±25V, VDS=0V - - ±100

VGS=-10V, IDS=-20A - 33 42

RDS(ON) a

Drain-Source On-state Resistance VGS=-4.5V, IDS=-10A - 39 52 mΩ

Diode Characteristics

VSDa Diode Forward Voltage ISD=-10A, VGS=0V - -0.8

-1.1

trr Reverse Recovery Time - 41 - ns

Qrr Reverse Recovery Charge IDS=-20A, dlSD/dt=100A/µs

- 73 - nC

Rev. A.2 - May., 2009 www.anpec.com.tw3

APM1102PF

Electrical Characteristics (Cont.) (TA = 25°C Unless Otherwise Noted)

APM1102PF

Symbol

Parameter Test Conditions Min.

Typ.

Max.

Unit

Dynamic Characteristics b

RG Gate Resistance VGS=0V,VDS=0V,F=1MHz

- 3.4 - Ω

Ciss Input Capacitance - 3250

Coss Output Capacitance - 310

Crss Reverse Transfer Capacitance

VGS=0V,

VDS=-30V,

Frequency=1.0MHz - 180

td(ON) Turn-on Delay Time - 13 24

tr Turn-on Rise Time - 7 14

td(OFF) Turn-off Delay Time - 108

195

tf Turn-off Fall Time

VDD=-30V, RL=30Ω,

IDS=-1A, VGEN=-10V,

RG=6Ω - 46 84

Gate Charge Characteristics b

Qg Total Gate Charge - 76.4

Qgs Gate-Source Charge - 13.6

Qgd Gate-Drain Charge

VDS=-50V, VGS=-10V,

IDS=-20A - 18.5

Note a : Pulse test ; pulse width≤300µs, duty cycle≤2%.

Note b : Guaranteed by design, not subject to production testing.

Rev. A.2 - May., 2009 www.anpec.com.tw4

APM1102PF

Typical Operating Characteristics

Power Dissipation

Ptot - Power (W)

Tj - Junction Temperature (°C)

ID - Drain Current (A)

Drain Current

Tj - Junction Temperature (°C)

Safe Operation Area

VDS - Drain - Source Voltage (V)

ID - Drain Current (A)

Normalized Transient Thermal Resistance

Thermal Transient Impedance

Square Wave Pulse Duration (sec)

0 20 40 60 80 100 120 140 160

TC=25oC

0 20 40 60 80 100 120 140 160

TC=25oC,VG=-10V

0.1 1 10 100 300

0.1

100

200

10ms

100ms

Rds(on) Limit

TC=25oC

1E-4 1E-3 0.01 0.1 110 100

1E-3

0.01

0.1

Mounted on minimum pad

RθJA :62.5oC/W

0.01

0.02

0.05

0.1

0.2

Single Pulse

Duty = 0.5

Rev. A.2 - May., 2009 www.anpec.com.tw5

APM1102PF

VDS - Drain - Source Voltage (V)

ID - Drain Current (A)

Output Characteristics

RDS(ON) - On - Resistance (mΩ)

Drain-Source On Resistance

ID - Drain Current (A)

VGS - Gate - Source Voltage (V)Tj - Junction Temperature (°C)

Gate Threshold Voltage

Typical Operating Characteristics (Cont.)

Drain-Source On Resistance

RDS(ON) - On - Resistance (mΩ)

VGS - Gate-source Voltage (V)

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

-3V

-4V

-3.5V

VGS= -4.5,-5,-,6,-7,-8,-9,-10V

0 10 20 30 40 50 60

VGS=4.5V

VGS=10V

2 3 4 5 6 7 8 9 10

IDS=-20A

-50 -25 025 50 75 100 125 150

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6 IDS= -250µA

Rev. A.2 - May., 2009 www.anpec.com.tw6

APM1102PF

Drain-Source On Resistance

Normalized On Resistance

Tj - Junction Temperature (°C)VSD - Source - Drain Voltage (V)

Source-Drain Diode Forward

IS - Source Current (A)

VDS - Drain - Source Voltage (V)

C - Capacitance (pF)

Capacitance Gate Charge

QG - Gate Charge (nC)

VGS - Gate-Source Voltage (V)

Typical Operating Characteristics (Cont.)

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

0.1

Tj=150oC

Tj=25oC

0 5 10 15 20 25 30 35 40

500

1000

1500

2000

2500

3000

3500

4000

4500

Frequency=1MHz

Crss

Coss

Ciss

0 10 20 30 40 50 60 70 80

10 VDS= -50V

IDS = -20A

-50 -25 0 25 50 75 100 125 150

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

RON@Tj=25oC: 33mΩ

VGS = -10V

IDS = -20A

Rev. A.2 - May., 2009 www.anpec.com.tw7

APM1102PF

Package Information

TO-220

AA1

E/2

EE2

LMIN. MAX.

4.83

0.51

1.14 1.78

0.36 0.61

14.22 16.51

1.40

12.19

MILLIMETERS

b0.38 1.02

2.54 BSC

TO-220

9.65 10.67

6.86

0.100 BSC

MIN. MAX.

INCHES

0.190

0.020

0.015 0.040

0.045 0.070

0.014 0.024

0.560 0.650

0.480

0.380 0.420

0.270

3.56 0.140 0.055

0.355

0.250

0.580

12.70

8.38 9.02

6.35

14.73 0.500

0.330

H1 5.84 6.86 0.230 0.270

4.09 0.161

2.03A2 2.92 0.080 0.115

E2 0.76 0.030

12.88 0.507

0.350

8.89

3.53 0.139

2.54 3.43 0.100 0.135

Note: Follow JEDEC TO-220 AB.

Rev. A.2 - May., 2009 www.anpec.com.tw8

APM1102PF

Classification Profile

Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly

Preheat & Soak

Temperature min (Tsmin)

Temperature max (Tsmax)

Time (Tsmin to Tsmax) (ts)

100 °C

150 °C

60-120 seconds

150 °C

200 °C

60-120 seconds

Average ramp-up rate

(Tsmax to TP) 3 °C/second max. 3°C/second max.

Liquidous temperature (TL)

Time at liquidous (tL) 183 °C

60-150 seconds 217 °C

60-150 seconds

Peak package body Temperature

(Tp)* See Classification Temp in table 1 See Classification Temp in table 2

Time (tP)** within 5°C of the specified

classification temperature (Tc) 20** seconds 30** seconds

Average ramp-down rate (Tp to Tsmax)

6 °C/second max. 6 °C/second max.

Time 25°C to peak temperature 6 minutes max. 8 minutes max.

* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.

Classification Reflow Profiles

Rev. A.2 - May., 2009 www.anpec.com.tw9

APM1102PF

Classification Reflow Profiles (Cont.)

Table 2. Pb-free Process – Classification Temperatures (Tc)

Package

Thickness Volume mm3

<350 Volume mm3

350-2000 Volume mm3

>2000

<1.6 mm 260 °C 260 °C 260 °C

1.6 mm – 2.5 mm 260 °C 250 °C 245 °C

≥2.5 mm 250 °C 245 °C 245 °C

Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)

Package

Thickness Volume mm3

<350 Volume mm3

≥350

<2.5 mm 235 °C 220 °C

≥2.5 mm 220 °C 220 °C

Reliability Test Program

Test item Method Description

SOLDERABILITY JESD-22, B102 5 Sec, 245°C

HOLT JESD-22, A108 1000 Hrs, Bias @ 125°C

PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C

TCT JESD-22, A104 500 Cycles, -65°C~150°C

Customer Service

Anpec Electronics Corp.

Head Office :

No.6, Dusing 1st Road, SBIP,

Hsin-Chu, Taiwan, R.O.C.

Tel : 886-3-5642000

Fax : 886-3-5642050

Taipei Branch :

2F, No. 11, Lane 218, Sec 2 Jhongsing Rd.,

Sindain City, Taipei County 23146, Taiwan

Tel : 886-2-2910-3838

Fax : 886-2-2917-3838