CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures.
Copyright © Harris Corporation 1992 7-666
SEMICONDUCTOR
CD4007UBMS
CMOS Dual Complementary Pair Plus Inverter
Pinout
CD4007UBMS
TOP VIEW
Functional Diagram
Q2 (P) DRAIN
Q2 (P) SOURCE
Q2 GATES
Q2 (N) SOURCE
Q2 (N) DRAIN
Q1 GATES
VDD, Q1, Q2, Q3 (P)
Q1 (P) SOURCE
Q3 (N) DRAIN, Q3 (P) SOURCE
Q3 (P) DRAIN
Q3 GATES
Q3 (N) SOURCE
Q1 (N) DRAIN
1
2
3
4
5
6
7
14
13
12
11
10
9
8
VSS, Q1, Q2, Q3 (N)
SUBSTRATES Q1 (N)
SOURCE
SUBSTRATES, Q1(P) DRAIN
6
TERMINAL NO. 14 - VDD
TERMINAL NO. 7 - VSS
p
n
p
n
p
n
12310
74 9
13 1
58
14 2 11
Features
• High-Voltage Type (20V Rating)
• Standardized Symmetrical Output Characteristics
• Medium Speed Operation
- tPHL, tPLH = 30 ns (typ) at 10V
• 100% Tested for Maximum Quiescent Current at 20V
• Meets All Requirements of JEDEC Tentative Stan-
dards No. 13B, “Standard Specifications for Descrip-
tion of “B” Series CMOS Devices”
• Maximum Input Current of 1µA at 18V Over Full Pack-
age-Temperature Range; 100nA at 18V and +25oC
Applications
• Extremely High-Input Impedance Amplifiers
• Shapers
• Inverters
• Threshold Detector
• Linear Amplifiers
• Crystal Oscillators
Description
CD4007BMS types are comprised of three n-channel and
three p-channel enhancement-type MOS transistors. The
transistor elements are accessible through the package ter-
minals to provide a convenient means for constructing the
various typical circuits as shown in Figure 2.
More complex functions are possible using multiple pack-
ages. Numbers shown in parentheses indicate terminals that
are connected together to form the various configurations
listed.
The CD4007BMS is supplied in these 14 lead outline pack-
ages:
Braze Seal DIP H4Q
Frit Seal DIP H1B
Ceramic Flatpack H3W
November 1994
File Number 3291
7-667
Specifications CD4007UBMS
Absolute Maximum Ratings Reliability Information
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V
(Voltage Referenced to VSS Terminals)
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
Operating Temperature Range. . . . . . . . . . . . . . . . -55oC to +125oC
Package Types D, F, K, H
Storage Temperature Range (TSTG). . . . . . . . . . . -65oC to +150oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC
At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for
10s Maximum
Thermal Resistance . . . . . . . . . . . . . . . . θja θjc
Ceramic DIP and FRIT Package. . . . . 80oC/W 20oC/W
Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W
Maximum Package Power Dissipation (PD) at +125oC
For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW
For TA = +100oC to +125oC (Package Type D, F, K). . . . . .Derate
Linearity at 12mW/oC to 200mW
Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW
For TA = Full Package Temperature Range (All Package Types)
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER SYMBOL CONDITIONS (NOTE 1) GROUP A
SUBGROUPS TEMPERATURE
LIMITS
UNITSMIN MAX
Supply Current IDD VDD = 20V, VIN = VDD or GND 1 +25oC - 0.5 µA
2 +125oC-50µA
VDD = 18V, VIN = VDD or GND 3 -55oC - 0.5 µA
Input Leakage Current IIL VIN = VDD or GND VDD = 20 1 +25oC -100 - nA
2 +125oC -1000 - nA
VDD = 18V 3 -55oC -100 - nA
Input Leakage Current IIH VIN = VDD or GND VDD = 20 1 +25oC - 100 nA
2 +125oC - 1000 nA
VDD = 18V 3 -55oC - 100 nA
Output Voltage VOL15 VDD = 15V, No Load 1, 2, 3 +25oC, +125oC, -55oC - 50 mV
Output Voltage VOH15 VDD = 15V, No Load (Note 3) 1, 2, 3 +25oC, +125oC, -55oC 14.95 - V
Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1 +25oC 0.53 - mA
Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1 +25oC 1.4 - mA
Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1 +25oC 3.5 - mA
Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1 +25oC - -0.53 mA
Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1 +25oC - -1.8 mA
Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1 +25oC - -1.4 mA
Output Current (Source) IOH15 VDD = 15V, VOUT = 13.5V 1 +25oC - -3.5 mA
N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1 +25oC -2.8 -0.7 V
P Threshold Voltage VPTH VSS = 0V, IDD = 10µA 1 +25oC 0.7 2.8 V
Functional F VDD = 2.8V, VIN = VDD or GND 7 +25oC VOH >
VDD/2 VOL <
VDD/2 V
VDD = 20V, VIN = VDD or GND 7 +25oC
VDD = 18V, VIN = VDD or GND 8A +125oC
VDD = 3V, VIN = VDD or GND 8B -55oC
Input Voltage Low
(Note 2) VIL VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC - 1.0 V
Input Voltage High
(Note 2) VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC 4.0 - V
Input Voltage Low
(Note 2) VIL VDD = 15V, VOH > 13.5V,
VOL < 1.5V 1, 2, 3 +25oC, +125oC, -55oC - 2.5 V
Input Voltage High
(Note 2) VIH VDD = 15V, VOH > 13.5V,
VOL < 1.5V 1, 2, 3 +25oC, +125oC, -55oC 12.5 - V
NOTES: 1. All voltages referenced to device GND, 100% testing being
implemented.
2. Go/No Go test with limits applied to inputs
3. For accuracy, voltage is measured differentially to VDD. Limit
is 0.050V max.
7-668
Specifications CD4007UBMS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER SYMBOL CONDITIONS (NOTE 1, 2) GROUP A
SUBGROUPS TEMPERATURE
LIMITS
UNITSMIN MAX
Propagation Delay TPHL
TPLH VDD = 5V, VIN = VDD or GND 9 +25oC - 110 ns
10, 11 +125oC, -55oC - 149 ns
Transition Time TTHL
TTLH VDD = 5V, VIN = VDD or GND 9 +25oC - 200 ns
10, 11 +125oC, -55oC - 270 ns
NOTES:
1. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
2. 55oC and +125oC limits guaranteed, 100% testing being implemented.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE
LIMITS
UNITSMIN MAX
Supply Current IDD VDD = 5V, VIN = VDD or GND 1, 2 -55oC, +25oC - 0.25 µA
+125oC - 7.5 µA
VDD = 10V, VIN = VDD or GND 1, 2 -55oC, +25oC - 0.5 µA
+125oC-15µA
VDD = 15V, VIN = VDD or GND 1, 2 -55oC, +25oC - 0.5 µA
+125oC-30µA
Output Voltage VOL VDD = 5V, No Load 1, 2 +25oC, +125oC,
-55oC-50mV
Output Voltage VOL VDD = 10V, No Load 1, 2 +25oC, +125oC,
-55oC-50mV
Output Voltage VOH VDD = 5V, No Load 1, 2 +25oC, +125oC,
-55oC4.95 - V
Output Voltage VOH VDD = 10V, No Load 1, 2 +25oC, +125oC,
-55oC9.95 - V
Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1, 2 +125oC 0.36 - mA
-55oC 0.64 - mA
Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1, 2 +125oC 0.9 - mA
-55oC 1.6 - mA
Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1, 2 +125oC 2.4 - mA
-55oC 4.2 - mA
Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1, 2 +125oC - -0.36 mA
-55oC - -0.64 mA
Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1, 2 +125oC - -1.15 mA
-55oC - -2.0 mA
Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1, 2 +125oC - -0.9 mA
-55oC - -1.6 mA
Output Current (Source) IOH15 VDD =15V, VOUT = 13.5V 1, 2 +125oC - -2.4 mA
-55oC - -4.2 mA
Input Voltage Low VIL VDD = 10V, VOH > 9V, VOL < 1V 1, 2 +25oC, +125oC,
-55oC-2V
Input Voltage High VIH VDD = 10V, VOH > 9V, VOL < 1V 1, 2 +25oC, +125oC,
-55oC8-V
Propagation Delay TPHL
TPLH VDD = 10V 1, 2, 3 +25oC - 60 ns
VDD = 15V 1, 2, 3 +25oC - 50 ns
7-669
Specifications CD4007UBMS
Transition Time TTHL
TTLH VDD = 10V 1, 2, 3 +25oC - 100 ns
VDD = 15V 1, 2, 3 +25oC - 80 ns
Input Capacitance CIN Any Input 1, 2 +25oC - 15.0 pF
NOTES:
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized
on initial design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE
LIMITS
UNITSMIN MAX
Supply Current IDD VDD = 20V, VIN = VDD or GND 1, 4 +25oC - 2.5 µA
N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1, 4 +25oC -2.8 -0.2 V
N Threshold Voltage
Delta ∆VNTH VDD = 10V, ISS = -10µA 1, 4 +25oC-±1V
P Threshold Voltage VPTH VSS = 0V, IDD = 10µA 1, 4 +25oC 0.2 2.8 V
P Threshold Voltage
Delta ∆VPTH VSS = 0V, IDD = 10µA 1, 4 +25oC-±1V
Functional F VDD = 18V, VIN = VDD or GND 1 +25oC VOH >
VDD/2 VOL <
VDD/2 V
VDD = 3V, VIN = VDD or GND
Propagation Delay Time TPHL
TPLH VDD = 5V 1, 2, 3, 4 +25oC - 1.35 x
+25oC
Limit
ns
NOTES: 1. All voltages referenced to device GND.
2. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 3. See Table 2 for +25oC limit.
4. Read and Record
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25OC
PARAMETER SYMBOL DELTA LIMIT
Supply Current - SSI IDD ±0.1µA
Output Current (Sink) IOL5 ± 20% x Pre-Test Reading
Output Current (Source) IOH5A ± 20% x Pre-Test Reading
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUP MIL-STD-883
METHOD GROUP A SUBGROUPS READ AND RECORD
Initial Test (Pre Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A
Interim Test 1 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A
Interim Test 2 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A
PDA (Note 1) 100% 5004 1, 7, 9, Deltas
Interim Test 3 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A
PDA (Note 1) 100% 5004 1, 7, 9, Deltas
Final Test 100% 5004 2, 3, 8A, 8B, 10, 11
Group A Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11
Group B Subgroup B-5 Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Subgroups 1, 2, 3, 9, 10, 11
Subgroup B-6 Sample 5005 1, 7, 9
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE
LIMITS
UNITSMIN MAX
7-670
Specifications CD4007UBMS
Schematic Diagram
FIGURE 1. DETAILED SCHEMATIC DIAGRAM OF CD4007UBMS SHOWING INPUT, OUTPUT, AND PARASITIC DIODES
Group D Sample 5005 1, 2, 3, 8A, 8B, 9 Subgroups 1, 2 3
NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.
TABLE 7. TOTAL DOSE IRRADIATION
CONFORMANCE GROUPS MIL-STD-883
METHOD
TEST READ AND RECORD
PRE-IRRAD POST-IRRAD PRE-IRRAD POST-IRRAD
Group E Subgroup 2 5005 1, 7, 9 Table 4 1, 9 Table 4
TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS
FUNCTION OPEN GROUND VDD 9V ± -0.5V
OSCILLATOR
50kHz 25kHz
Static Burn-In
1 Note 1 1, 5, 8, 12, 13 3, 4, 6, 7, 9, 10 2, 11, 14
Static Burn-In
2 Note 1 1, 5, 8, 12, 13 4, 7, 9 2, 3, 6, 10, 11, 14
Dynamic Burn-
In Note 1 - 4, 7, 9 2, 11, 14 1, 5, 8, 12, 13 3, 6, 10 -
Irradiation
Note 2 1, 5, 8, 12, 13 4, 7, 9 2, 3, 6, 10, 11, 14
NOTE:
1. Each pin except VDD and GND will have a series resistor of 10K ±5%, VDD = 18V ±0.5V
2. Each pin except VDD and GND will have a series resistor of 47K±5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD
= 10V ±0.5V
TABLE 6. APPLICABLE SUBGROUPS (Continued)
CONFORMANCE GROUP MIL-STD-883
METHOD GROUP A SUBGROUPS READ AND RECORD
13
D2
D2
14
D2 D2
D1D1
68D1
D1
7
R1
*
D2
D2
D2 D2
D1D1
35D1
D1
4
R1
*
12
D2
D2
D2 D2
D1D1 D1
D1
9
R1
*
Q1
2
1Q2 10
11
Q3
D1
*CMOS INPUT
PROTECTION
NETWORK PARASITIC AND
NETWORK COMPONENTS
D1 = N+ TO P WELL
D2 = P+ TO SUBSTRATE
R1 = 1 - 5 KΩ
R2 = 15 - 30Ω
**CMOS OUTPUT PROTECTION
NETWORK BETWEEN TERMINAL
NOS. 1, 2, 4, 5, 8, 9, 11, 12, 13
AND THE CORRESPONDING
DRAINS AND/OR SOURCES
**
** **
**
**
****
D2
D1
R2
D1
VDD
VSS
OUTPUT
TERMINAL
7-671
CD4007UBMS
Logic Circuits
FIGURE 2. SAMPLE CMOS LOGIC CIRCUIT ARRANGEMENTS USING TYPE CD4007UBMS
a) TRIPLE INVERTERS b) 3 - INPUT NOR GATE c) 3 - INPUT NAND GATE
d) TREE (RELAY) LOGIC
e) HIGH SINK-CURRENT DRIVER f) HIGH SOURCE-CURRENT DRIVER
g) HIGH SINK - AND SOURCE-CURRENT DRIVER h) DUAL BI-DIRECTIONAL TRANSMISSION GATING
6835
10 12
(14, 2, 11); (8, 13);
(1, 5); (7, 4, 9)
6
3
10 12
(13, 2); (1, 11);
(12, 5, 8); (7, 4, 9)
6
3
10 12
(1, 12, 13); (2, 14, 11);
(4, 8); (5, 9)
VSS
C
A
B
12
6
VDD
3
10 OUT
#
#ALL P- UNIT SUBSTRATES
ARE CONNECTED TO VDD
ALL N- UNIT SUBSTRATES
ARE CONNECTED TO VSS
VDD
A
B
AB
C
C
OUT
VSS
OUT (VDD) = C + AB
OUT (VSS) = CA + CB
(13, 12, 5); (4, 9, 8);
(14, 2); (1, 11)
12
6
VDD
VSS
(OPTIONAL VDD PULL-UP)
(6, 3, 10); (8, 5, 12);
(11, 14); (7, 4, 9)
6 12
VDD
VSS
(OPTIONAL VSS PULL-DOWN)
(6, 3, 10); (13, 1, 12);
(14, 2, 11); (7, 9)
612
VDD
VSS
(6, 3, 10); (14, 2, 11);
(7, 4, 9); (13, 8, 1, 5, 12)
TG1
TG2
4
2
12
6
CLOCK
IN
(OUT)
OUT1
(IN1)
OUT2
(IN2)
(1, 5, 12); (2, 9);
(11, 4); (8, 13, 10);
(6, 3)
7-672
CD4007UBMS
Typical Performance Characteristics
FIGURE 3. TYPICAL VOLTAGE-TRANSFER CHARACTERIS-
TICS FOR NAND GATE FIGURE 4. TYPICAL VOLTAGE-TRANSFER CHARACTERIS-
TICS FOR NOR GATE
FIGURE 5. TYPICAL OUTPUT LOW (SINK) CURRENT
CHARACTERISTICS FIGURE 6. MINIMUM AND MAXIMUM VOLTAGE-TRANSFER
CHARACTERISTICS FOR INVERTER
FIGURE 7. TYPICAL CURRENT AND VOLTAGE-TRANSFER
CHARACTERISTICS FOR INVERTER FIGURE 8. MINIMUM OUTPUT LOW (SINK) CURRENT
CHARACTERISTICS
VI
VO
VDD
A - SINGLE INPUT ONLY
B - TWO INPUTS ONLY
C - THREE INPUTS
*OTHER INPUT
SWITCHES TO VDD
*
AMBIENT TEMPERATURE (TA) = +25oC
SUPPLY VOLTAGE
(VDD) = 15V
C
B
A
A
B
C
A
B
C
10V
5V
0 2.5 5.0 7.5 10 12.5 15
INPUT VOLTAGE (VI) (V)
OUTPUT VOLTAGE (VO) (V)
2
4
6
8
10
12
14
16
VO
VI
A - SINGLE INPUT ONLY
B - TWO INPUTS ONLY
C - THREE INPUTS
*OTHER INPUT
*
AMBIENT TEMPERATURE (TA) = +25oC
SUPPLY VOLTAGE
(VDD) = 15V
OUTPUT VOLTAGE (VO) (V)
2
4
6
8
10
12
14
16
0 2.5 5.0 7.5 10.0 12.5 15.0
INPUT VOLTAGE (VI) (V)
A
B
C
A
B
C
A
B
C
10V
5V
10V
5V
AMBIENT TEMPERATURE (TA) = +25oC
GATE-TO-SOURCE VOLT AGE (VGS) = 15V
0 5 10 15
15
10
5
20
25
30
DRAIN-TO-SOURCE VOLT AGE (VDS) (V)
OUTPUT LOW (SINK) CURRENT (IOL) (mA)
AMBIENT TEMPERATURE (TA) = +25oC
VI VO
SUPPLY VOLTAGE
(VDD) = 15V
10V
5V
OUTPUT VOLTAGE (VO) (V)
15.0
12.5
10.0
7.5
5.0
2.5
0 2.5 5.0 7.5 10.0 12.5 15.0
INPUT VOLTAGE (VI) (V)
ID VO
ID
VDD
VO
14 11
VI
10
79
12
TERM 3 & 6 TO GND
SUPPLY MILLIAMPERES (ID)
AMBIENT TEMPERATURE (TA) = +25oC
SUPPLY VOLTAGE
(VDD) = 15V
OUTPUT VOLTAGE (VO) (V)
15.0
12.5
10.0
7.5
5.0
2.5
0 2.5 5.0 7.5 10.0 12.5 15.0
12.5
10.0
7.5
5.0
2.5
INPUT VOLTAGE (VI) (V)
10
10
15
5
5
10V
5V
AMBIENT TEMPERATURE (TA) = +25oC
GATE-TO-SOURCE VOLT AGE (VGS) = 15V
0 5 10 15
7.5
5.0
2.5
10.0
12.5
15.0
DRAIN-TO-SOURCE VOLT AGE (VDS) (V)
OUTPUT LOW (SINK) CURRENT (IOL) (mA)
7-673
CD4007UBMS
FIGURE 9. TYPICAL OUTPUT HIGH (SOURCE) CURRENT
CHARACTERISTICS FIGURE 10. MINIMUM OUTPUT HIGH (SOURCE) CURRENT
CHARACTERISTICS
FIGURE 11. TYPICAL VOLTAGE-TRANSFER CHARACTERIS-
TICS AS A FUNCTION OF TEMPERATURE FIGURE 12. TYPICAL PROPAGATION DELAY TIME vs LOAD
CAPACITANCE
FIGURE 13. TYPICAL TRANSISTION TIME vs LOAD
CAPACITANCE FIGURE 14. TYPICAL DISSIPATION vs FREQUENCY
CHARACTERISTICS
Typical Performance Characteristics
(Continued)
-10V
-15V
AMBIENT TEMPERATURE (TA) = +25oC
GATE-TO-SOURCE VOLT AGE (VGS) = -5V
0
-5
-10
-15
DRAIN-TO-SOURCE VOLT AGE (VDS) (V)
-20
-25
-30
0-5-10-15
OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA)
-10V
-15V
AMBIENT TEMPERATURE (TA) = +25oC0
-5
-10
-15
DRAIN-TO-SOURCE VOLT AGE (VDS) (V) 0-5-10-15
OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA)
GATE-TO-SOURCE VOLT AGE (VGS) = -5V
INPUT VOLTAGE (VI) (V)
SUPPLY VOLTAGE
(VDD) = 15V
OUTPUT VOLTAGE (VO) (V)
15
10
5
0 5 10 15
TA =125oC
5V
10V
-55oC
-55oC
-55oC
125oC
125oC
0 20 40 60 80 100
100
80
60
40
20
PROPAGATION DELAY TIME (tPLH, tPHL) (ns)
AMBIENT TEMPERATURE (TA) = +25oC
LOAD CAPACITANCE (CL) (pF)
SUPPLY VOL TAGE (VDD) = 5V
15V
10V
AMBIENT TEMPERATURE (TA) = +25oC
LOAD CAPACITANCE (CL) (pF)
0 40 60 80 10020
0
50
100
150
200
SUPPLY VOL TAGE (VDD) = 5V
10V
5V
TRANSITION TIME (fTHL, fTLH) (ns)
AMBIENT TEMPERATURE (TA) = +25oC
SUPPLY VOL TAGE (VDD) = 15V
5V
10V
10V
LOAD CAPACITANCE (CL) = 15pF
(CL) = 50pF
105
104
103
102
10
1
102103104105106107
2468 2468 2468 2468 2468 2468
INPUT FREQUENCY (fi) (Hz)
DISSIPATION PER GATE (PD) (µW)
7-674
CD4007UBMS
Chip Dimension and Pad Layout
Dimensions in parentheses are in millimeters
and are derived from the basic inch dimensions
as indicated. Grid graduations are in mils (10-3 inch)
METALLIZATION: Thickness: 11kÅ−14kÅ, AL.
PASSIVATION: 10.4kÅ - 15.6kÅ, Silane
BOND PADS: 0.004 inches X 0.004 inches MIN
DIE THICKNESS: 0.0198 inches - 0.0218 inches
