MCMA65P1600TA Thyristor Module VRRM = 2x 1600 V I TAV = 65 A VT = 1.17 V Phase leg Part number MCMA65P1600TA Backside: isolated 3 6 7 1 5 4 2 Features / Advantages: Applications: Package: TO-240AA Thyristor for line frequency Planar passivated chip Long-term stability Direct Copper Bonded Al2O3-ceramic Line rectifying 50/60 Hz Softstart AC motor control DC Motor control Power converter AC power control Lighting and temperature control Isolation Voltage: 4800 V~ Industry standard outline RoHS compliant Soldering pins for PCB mounting Base plate: DCB ceramic Reduced weight Advanced power cycling Terms and Conditions of Usage The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. (c) 2016 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20161222c MCMA65P1600TA Ratings Thyristor Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25C 1600 I R/D reverse current, drain current VT forward voltage drop min. typ. VR/D = 1600 V TVJ = 25C 100 A TVJ = 140C 10 mA IT = TVJ = 25C 1.20 V 1.45 V 1.17 V IT = 65 A TVJ = 125 C 65 A I T = 130 A I TAV average forward current TC = 85 C I T(RMS) RMS forward current 180 sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case for power loss calculation only RthCH thermal resistance case to heatsink total power dissipation I TSM max. forward surge current It value for fusing V VR/D = 1600 V I T = 130 A Ptot max. Unit 1700 V 1.48 V T VJ = 140 C 65 A 105 A TVJ = 140 C 0.85 V 4.8 m 0.5 K/W K/W 0.20 TC = 25C 230 W t = 10 ms; (50 Hz), sine TVJ = 45C 1.15 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 1.24 kA t = 10 ms; (50 Hz), sine TVJ = 140 C 980 A t = 8,3 ms; (60 Hz), sine VR = 0 V 1.06 kA t = 10 ms; (50 Hz), sine TVJ = 45C 6.62 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V 6.40 kAs t = 10 ms; (50 Hz), sine TVJ = 140 C 4.80 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25C PGM max. gate power dissipation t P = 30 s T C = 140 C 4.63 kAs 54 t P = 300 s pF 10 W 5 W 0.5 W PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 140 C; f = 50 Hz repetitive, IT = 195 A t P = 200 s; di G /dt = 0.45 A/s; (dv/dt)cr critical rate of rise of voltage V = VDRM VGT gate trigger voltage VD = 6 V TVJ = 25 C 1.5 TVJ = -40 C 1.6 V I GT gate trigger current VD = 6 V TVJ = 25 C 95 mA TVJ = -40 C 200 mA VGD gate non-trigger voltage TVJ = 140C 0.2 V I GD gate non-trigger current 10 mA IL latching current TVJ = 25 C 200 mA I G = 0.45 A; V = VDRM non-repet., I T = 150 A/s 65 A 500 A/s 1000 V/s TVJ = 140C R GK = ; method 1 (linear voltage rise) VD = VDRM tp = 10 s V IG = 0.45 A; di G /dt = 0.45 A/s IH holding current VD = 6 V R GK = TVJ = 25 C 200 mA t gd gate controlled delay time VD = 1/2 VDRM TVJ = 25 C 2 s tq turn-off time IG = 0.45 A; di G /dt = 0.45 A/s VR = 100 V; I T = 65 A; V = VDRM TVJ =125 C di/dt = 10 A/s dv/dt = IXYS reserves the right to change limits, conditions and dimensions. (c) 2016 IXYS all rights reserved 150 s 20 V/s t p = 200 s Data according to IEC 60747and per semiconductor unless otherwise specified 20161222c MCMA65P1600TA Package Ratings TO-240AA Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 120 Unit A -40 140 C -40 125 C 125 C 81 Weight g MD mounting torque 2.5 4 Nm MT terminal torque 2.5 4 Nm d Spp/App d Spb/Apb VISOL terminal to terminal 13.0 terminal to backside 16.0 creepage distance on surface | striking distance through air t = 1 second isolation voltage t = 1 minute 50/60 Hz, RMS; IISOL 1 mA 9.7 mm 16.0 mm 4800 V 4000 V Part description M C M A 65 P 1600 TA Ordering Standard Ordering Number MCMA65P1600TA Equivalent Circuits for Simulation I V0 R0 Marking on Product MCMA65P1600TA * on die level = = = = = = = = Module Thyristor (SCR) Thyristor (up to 1800V) Current Rating [A] Phase leg Reverse Voltage [V] TO-240AA-1B Delivery Mode Box Code No. 512930 T VJ = 140 C Thyristor V 0 max threshold voltage 0.85 V R0 max slope resistance * 3.6 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2016 IXYS all rights reserved Quantity 36 Data according to IEC 60747and per semiconductor unless otherwise specified 20161222c MCMA65P1600TA Outlines TO-240AA 3 IXYS reserves the right to change limits, conditions and dimensions. (c) 2016 IXYS all rights reserved 6 7 1 5 4 2 Data according to IEC 60747and per semiconductor unless otherwise specified 20161222c MCMA65P1600TA Thyristor 200 104 1200 VR = 0 V 50 Hz, 80% VRRM 150 IT ITSM 800 2 It 100 TVJ = 45C TVJ = 45C TVJ = 125C [A] [A] [A2s] TVJ = 140C 140C 50 TVJ = 140C 400 TVJ = 25C 103 0 0.5 1.0 1.5 2.0 0.01 0.1 VT [V] 1 4 5 6 7 8 910 t [ms] Fig. 3 I t versus time (1-10 s) 100.0 2: IGT, TVJ = 25C 3: IGT, TVJ = -40C 120 5 3 dc = 1 0.5 0.4 0.33 0.17 0.08 6 4 TVJ = 25C 10.0 2 1 3 2 Fig. 2 Surge overload current ITSM: crest value, t: duration 1: IGD, TVJ = 140C VG 2 t [s] Fig. 1 Forward characteristics 10 1 tgd ITAVM 80 1 [V] lim. [s] 1.0 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W 0.1 1 10 100 1000 typ. 0.1 0.01 10000 [A] 40 0 0.10 1.00 10.00 0 40 IG [A] IG [mA] Fig. 5 Gate controlled delay time tgd Fig. 4 Gate voltage & gate current 80 120 160 Tcase [C] Fig. 6 Max. forward current at case temperature 0.60 120 dc = 1 0.5 0.4 0.33 0.17 0.08 100 Ptot 80 [W] 60 0.50 RthHA 0.2 0.4 0.6 0.8 1.0 2.0 0.40 ZthJC 0.30 [K/W] 40 0.20 20 0.10 i Rthi (K/W) 1 0.0200 2 0.0300 3 0.2100 4 0.2400 ti (s) 0.0001 0.0060 0.0500 0.1800 0.00 0 0 20 40 60 80 IT(AV) [A] 0 40 80 120 160 Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. (c) 2016 IXYS all rights reserved 1 10 100 1000 10000 t [ms] Tamb [C] Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20161222c Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: IXYS: MCMA65P1600TA