MOC8020, MOC8021 NON BASE LEAD OPTICALLY COUPLED ISOLATOR PHOTODARLINGTON OUTPUT l Dimensions in mm 2.54 APPROVALS UL recognised, File No. E91231 6.9 6.1 1 2 6 5 3 4 8.9 max. DESCRIPTION The MOC8020, MOC8021 series of optically coupled isolators consist of an infrared light emitting diode and NPN silicon photodarlington in a standard 6pin dual in line plastic package with the base pin unconnected. 8.3 max. 5.3 max. 1.4 0.9 2.54 min. 0.48 FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Current Transfer Ratio (500% min) l High BVceo ( 50V ) High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l Basepin unconnected for improved noise immunity in high EMI environment l High sensitivity to low input drive current l Custom electrical selections available APPLICATIONS l Computer terminals l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances OPTION SM 0.25 15 max. ABSOLUTE MAXIMUM RATINGS (25C unless otherwise specified) Storage Temperature -55C to + 150C Operating Temperature -55C to + 100C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 60mA 5V 120mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Power Dissipation 50V 5V 150mW OPTION G SURFACE MOUNT 8.3 max POWER DISSIPATION 1.2 0.6 10.2 9.5 1.4 0.9 0.26 10.16 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 7/12/00 Total Power Dissipation 250mW (derate linearly 3.3mW/C above 25C) ISOCOM INC 1024 S. Greenville Ave, Suite 240, Allen, TX 75002 USA Tel: (214) 495-0755 Fax: (214) 495-0901 e-mail info@isocom.com http://www.isocom.com DB92152-AAS/A2 ELECTRICAL CHARACTERISTICS ( TA = 25C Unless otherwise noted ) Input Output Coupled PARAMETER MIN TYP MAX UNITS Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) 3 1.2 Collector-emitter Breakdown (BVCEO) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) Output Collector Current ( IC )(Note 2) MOC8020 MOC8021 Input to Output Isolation Voltage VISO Note 1 Note 2 1.5 TEST CONDITION 10 V V A IF = 10mA IR = 10A VR = 3V 100 V V n IC = 1mA (note 2) IE = 100A VCE = 10V 50 100 mA mA 10mA IF , 5V VCE 10mA IF , 5V VCE 5300 7500 VRMS VPK (note 1) (note 1) 50 5 Input-output Isolation Resistance RISO 1011 VIO = 500V (note 1) Output Output Output Output 3.5 95 1 2 s s s s VCC= 10V, IF= 5mA, RL = 100 , fig.1 Turn on Time Turn off Time Rise Time Fall Time ton toff tr tf Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. FIGURE 1 VCC = 10V Input IF = 5mA ton 100 toff tr Input 7/12/00 Output tf Output 10% 10% 90% 90% DB92152-AAS/A2 Collector Power Dissipation vs. Ambient Temperature Current Transfer Ratio vs. Forward Current 10000 4000 Current transfer ratio CTR (%) Collector power dissipation P C (mW) 200 150 100 50 0 1000 400 100 40 20 10 VCE = 5V TA = 25C 0 -30 0 25 50 75 100 0.1 0.2 0.5 125 1 2 5 10 20 50 100 Forward current IF (mA) Ambient temperature TA ( C ) Forward Current vs. Ambient Temperature Collector Current vs. Collector-emitter Voltage 80 5mA 100 TA = 25C Collector current I C (mA) Forward current I F (mA) 70 60 50 40 30 20 80 60 40 2mA 20 IF = 1mA 10 0 0 -30 0 25 50 75 100 125 0 Ambient temperature TA ( C ) Normalized current transfer ratio (V) CE(SAT) Collector-emitter saturation voltage V 0.8 0.6 0.4 0.2 0 4 5 1.5 IF = 10mA VCE = 5V 1.0 0.5 0 -30 0 25 50 75 Ambient temperature TA ( C ) 7/12/00 3 Normalized Current Transfer Ratio vs. Ambient Temperature IF = 1mA IC = 1mA 1.0 2 Collector-emitter voltage VCE ( V ) Collector-emitter Saturation Voltage vs. Ambient Temperature 1.2 1 100 -30 0 25 50 75 Ambient temperature TA ( C ) 100 DB92152-AAS/A2