Datasheet
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R6008FNJ
Nch 600V 8A Power MOSFET
1,000
TL
R6008FNJ
4) Drive circuits can be simple.
2) Fast switching speed.
Tape width (mm)
24
3) Gate-source voltage (VGSS) guaranteed to be 30V.
lApplication
Reel size (mm)
Taping
330
lOutline
lInner circuit
lPackaging specifications
LPTS
(SC-83)
Drain - Source voltage
lFeatures
600V
0.95W
50W
8A
5) Parallel use is easy.
VDSS
Switching Power Supply
RDS(on) (Max.)
ID
PD
1) Low on-resistance.
6) Pb-free lead plating ; RoHS compliant
32
Continuous drain current
Basic ordering unit (pcs)
Pulsed drain current
Gate - Source voltage
Parameter
Type
Packaging
Tc = 25°C
Taping code
lAbsolute maximum ratings(Ta = 25°C)
Marking
Tc = 100°C
Unit
600
A
8
Value
V
V
30
V/ns
150
Reverse diode dv/dt
Range of storage temperature
Power dissipation (Tc = 25°C)
°C
W
Junction temperature
A
15
-55 to +150
3.9
A
A
°C
mJ
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current
4
3.4
mJ
50
4.3
(1) Gate
(2) Drain
(3) Source
*1 Body Diode
(3)
(1)
(2)
1/13
2012.07 - Rev.B
TO-263(D2PAK)
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Data Sheet
R6008FNJ
lAbsolute maximum ratings
lThermal resistance
Thermal resistance, junction - case
Parameter
Max.
V
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
lElectrical characteristics(Ta = 25°C)
Drain - Source voltage slope
dv/dt
VDS = 480V, ID = 8A
-
Typ.
Values
Typ.
°C/W
Unit
Max.
Unit
Tsold
RthJA
Symbol
Symbol
nA
V/ns
Tj = 125°C
Tj = 125°C
50
V
RthJC
265
100
10
Parameter
Zero gate voltage
drain current
V(BR)DSS
VGS = 0V, ID = 8A
VGS = 0V, ID = 1mA
Values
Parameter
Drain - Source breakdown
voltage
VDS = 600V, VGS = 0V
Conditions
mA
mA
Conditions
Values
-
-
80
°C
-
Min.
Min.
100
-
-
4.0
1
-
V
Symbol
-
Unit
°C/W
-
2.5
-
-
Gate threshold voltage
VGS (th)
VDS = 10V, ID = 1mA
2.0
Gate - Source leakage current
VGS = 30V, VDS = 0V
-
700
Tj = 25°C
Drain - Source avalanche
breakdown voltage
-
600
-
IDSS
IGSS
-
V(BR)DS
-
W
Gate input resistance
RG
f = 1MHz, open drain
-
8.0
-
Static drain - source
on - state resistance
RDS(on) *6
W
Tj = 25°C
-
0.73
0.95
Tj = 125°C
-
1.62
-
VGS = 10V, ID = 4A
2/13
2012.07 - Rev.B
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Data Sheet
R6008FNJ
*1 Limited only by maximum temperature allowed.
*2 Pw 10ms, Duty cycle 1%
*3 L ⋍ 500mH, VDD = 50V, RG = 25W, starting Tj = 25°C
*4 L ⋍ 500mH, VDD = 50V, RG = 25W, starting Tj = 25°C, f = 10kHz
*5 Reference measurement circuits Fig.5-1.
*6 Pulsed
5.7
-
V
Gate plateau voltage
V(plateau)
VDD ⋍ 300V, ID = 8A
-
-
Gate - Drain charge
Qgd *6
Total gate charge
Gate - Source charge
Qgs *6
ID = 8A
Qg *6
VDD ⋍ 300V
VGS = 10V
Unit
-
5
-
Min.
nC
20
-
Conditions
10
-
-
Max.
Parameter
lGate Charge characteristics(Ta = 25°C)
Rise time
tr *6
ID = 4A
Symbol
Values
25
Typ.
Turn - off delay time
td(off) *6
Fall time
tf *6
ns
60
120
30
60
-
20
-
RG = 10W
-
RL = 75W
-
-
Turn - on delay time
td(on) *6
VDD ⋍ 300V, VGS = 10V
-
Effective output capacitance,
energy related
Effective output capacitance,
time related
Co(er)
Co(tr)
VGS = 0V
VDS = 0V to 480V
580
-
gfs *6
VDS = 10V, ID = 4.0A,
pF
-
pF
-
31.5
-
-
31.8
-
Crss
f = 1MHz
-
25
-
450
Max.
Reverse transfer capacitance
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
5.0
Transconductance
Input capacitance
2.5
Output capacitance
Coss
VDS = 25V
-
-
S
Ciss
VGS = 0V
-
3/13
2012.07 - Rev.B
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Data Sheet
R6008FNJ
Unit
Min.
Max.
Peak reverse recovery current
Parameter
Symbol
Conditions
Values
Reverse recovery charge
trr *6
-
Inverse diode continuous,
forward current
Inverse diode direct current,
pulsed
-
4.9
-
lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
-
0.17
-
mC
VSD *6
VGS = 0V, IS = 8A
Typ.
Forward voltage
Reverse recovery time
Tc = 25°C
IS = 8A
di/dt = 100A/us
67
-
-
-
-
Qrr *6
Irrm *6
IS *1
ISM *2
-
Rth3
0.583
Cth3
0.174
A/ms
-
Tj = 25°C
0.0014
K/W
Ws/K
Rth2
0.472
Cth2
0.00402
0.118
Cth1
Rth1
Peak rate of fall of reverse
recovery current
dirr/dt
Symbol
Value
lTypical Transient Thermal Characteristics
610
Symbol
Value
Unit
Unit
-
-
A
A
A
1.5
V
ns
32
8
-
4/13
2012.07 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
R6008FNJ
lElectrical characteristic curves
0
20
40
60
80
100
120
050 100 150 200
0.0001
0.001
0.01
0.1
1
10
100
1000
0.0001 0.01 1 100
T
a = 25ºC
Single Pulse
R
th(ch-a)(t) = ｒ(t)×Rth(ch-a)
Rth(ch-a) = 80ºC/W
top D = 1
D = 0.5
D = 0.1
D = 0.05
D = 0.01
D = Single
0.01
0.1
1
10
100
0.1 1 10 100 1000
Operation in this
area is limited
by RDS(ON)
PW = 100us
PW = 1ms
PW = 10ms
T
a = 25ºC
Single Pulse
Fig.1 Power Dissipation Derating Curve
Power Dissipation : PD/PD max. [%]
Junction Temperature : Tj [°C]
Fig.2 Maximum Safe Operating Area
Drain Current : ID [A]
Drain - Source Voltage : VDS [V]
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Normalized Transient Thermal Resistance : r(t)
Pulse Width : PW [s]
5/13
2012.07 - Rev.B
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Data Sheet
R6008FNJ
lElectrical characteristic curves
0
1
2
3
4
5
6
0.01 0.1 1 10 100
Ta = 25ºC
VDD = 50V , RG = 25W
VGF = 10V , VGR = 0V
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
1.0E+04 1.0E+05 1.0E+06
Ta = 25ºC
0
20
40
60
80
100
120
025 50 75 100 125 150 175
Fig.4 Avalanche Current vs Inductive Load
Avalanche Current : IAR [A]
Coil Inductance : L [mH]
Fig.5 Avalanche Power Losses
Avalanche Power Losses : PAR [W]
Frequency : f [Hz]
Fig.6 Avalanche Energy Derating Curve
vs Junction Temperature
Avalanche Energy : EAS / EAS max. [%]
Junction Temperature : Tj [ºC]
6/13
2012.07 - Rev.B
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Data Sheet
R6008FNJ
lElectrical characteristic curves
Fig.7 Typical Output Characteristics(I)
Drain Current : ID [A]
Drain - Source Voltage : VDS [V]
Fig.8 Typical Output Characteristics(II)
Drain Current : ID [A]
Drain - Source Voltage : VDS [V]
Fig.9 Tj = 150°C Typical Output
Characteristics(I)
Drain Current : ID [A]
Drain - Source Voltage : VDS [V]
Fig.10 Tj = 150°C Typical Output
Characteristics(II)
Drain Current : ID [A]
Drain - Source Voltage : VDS [V]
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
010 20 30 40 50
Ta=25℃
pulsed
VGS=10.0V
VGS=6.0V
VGS=7.0V
VGS=5.0V
VGS=4.5V
0
1
2
3
4
5
6
7
8
0 1 2 3 4 5
Ta=25℃
pulsed
VGS=6.0V
VGS=7.0V
VGS=10.0V
VGS=5.0V
VGS=4.5V
0
1
2
3
4
5
6
7
8
010 20 30 40 50
Ta = 150ºC
Pulsed
VGS = 4.5V
VGS = 10V
VGS = 6.0V
VGS = 5.0V
VGS = 7.0V
VGS = 5.5V
0
2
4
0 1 2 3 4 5
Ta = 150ºC
Pulsed
VGS = 4.5V
VGS = 10V
VGS = 5.0V
VGS = 6.0V
VGS = 7.0V
7/13
2012.07 - Rev.B
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Data Sheet
R6008FNJ
lElectrical characteristic curves
0
1
2
3
4
5
6
-50 0 50 100 150
VDS = 10V
ID = 1mA
Fig.11 Breakdown Voltage
vs. Junction Temperature
Drain - Source Breakdown Voltage : V(BR)DSS [V]
Junction Temperature : Tj [°C]
Fig.12 Typical Transfer Characteristics
Drain Current : ID [A]
Gate - Source Voltage : VGS [V]
Fig.13 Gate Threshold Voltage
vs. Junction Temperature
Gate Threshold Voltage : VGS(th) [V]
Junction Temperature : Tj [°C]
Fig.14 Transconductance vs. Drain Current
Transconductance : gfs [S]
Drain Current : ID [A]
0.001
0.01
0.1
1
10
100
0.0 1.5 3.0 4.5 6.0
VDS = 10V
Pulsed
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
500
550
600
650
700
750
800
850
900
-50 0 50 100 150
0.01
0.1
1
10
0.01 0.1 1 10 100
VDS = 10V
Pulsed
Ta = -25ºC
Ta = 25ºC
Ta = 75ºC
Ta = 125ºC
8/13
2012.07 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
R6008FNJ
lElectrical characteristic curves
0.1
1
10
0.1 1 10
VGS = 10V
Pulsed
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
0
0.5
1
1.5
2
2.5
3
-50 0 50 100 150
ID= 4.0A
ID= 8.0A
VGS = 10V
Pulsed
0
0.5
1
1.5
2
0 5 10 15
ID= 4.0A
ID= 8.0A
Ta = 25ºC
Pulsed
Fig.15 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
Static Drain - Source On-State Resistance
: RDS(on) [W]
Gate - Source Voltage : VGS [V]
Fig.16 Static Drain - Source On - State
Resistance vs. Junction Temperature
Static Drain - Source On-State Resistance
: RDS(on) [W]
Junction Temperature : Tj [ºC]
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current
Static Drain - Source On-State Resistance
: RDS(on) [W]
Drain Current : ID [A]
9/13
2012.07 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
R6008FNJ
lElectrical characteristic curves
0
2
4
6
0 200 400 600
Ta = 25ºC
1
10
100
1000
10000
0.01 0.1 1 10 100 1000
Ciss
Coss
Crss
Ta= 25
℃
f= 1MHz
VGS= 0V
1
10
100
1000
10000
0.1 1 10 100
T
a= 25℃
V
DD
= 300V
V
GS= 10V
RG
= 10W
tr
td(on)
td(off)
tf
Fig.18 Typical Capacitance
vs. Drain - Source Voltage
Capacitance : C [pF]
Drain - Source Voltage : VDS [V]
Fig.19 Coss Stored Energy
Coss Stored Energy : EOSS [uJ]
Drain - Source Voltage : VDS [V]
Fig.20 Switching Characteristics
Switching Time : t [ns]
Drain Current : ID [A]
Fig.21 Dynamic Input Characteristics
Gate - Source Voltage : VGS [V]
Total Gate Charge : Qg [nC]
0
5
10
15
010 20 30
Ta= 25℃
VDD= 300V
ID= 8.0A
Pulsed
10/13
2012.07 - Rev.B
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Data Sheet
R6008FNJ
lElectrical characteristic curves
10
100
1000
0.1 1 10 100
Ta= 25
℃
di / dt= 100A / ms
VGS= 0V
Pulsed
0.01
0.1
1
10
100
0 0.5 1 1.5 2
V
GS
= 0V
Pulsed
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
Fig.22 Inverse Diode Forward Current
vs. Source - Drain Voltage
Inverse Diode Forward Current : IS [A]
Source - Drain Voltage : VSD [V]
Fig.23 Reverse Recovery Time
vs.Inverse Diode Forward Current
Reverse Recovery Time : trr [ns]
Inverse Diode Forward Current : IS [A]
11/13
2012.07 - Rev.B
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Data Sheet
R6008FNJ
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2　Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform
Fig.4-1 dv/dt Measurement Circuit Fig.4-2 dv/dt Waveform
Fig.5-1 di/dt Measurement Circuit Fig.5-2 di/dt Waveform
12/13
2012.07 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
R6008FNJ
lDimensions (Unit : mm)
Dimension in mm/inches
LPTS
L3
b2
b3
eb
L2
E
c1
A2
L1
c
H
A3
Lp
L
L4
l3
l2 l1
b6
x B A
B
A1
eb5
DA
MIN MAX MIN MAX
A1 0.00 0.30 0 0.012
A2 4.30 4.70 0.169 0.185
A3
b 0.68 0.98 0.027 0.039
b2
b3 1.14 1.44 0.045 0.057
c 0.30 0.60 0.012 0.024
c1 1.10 1.50 0.043 0.059
D 9.80 10.40 0.386 0.409
E 8.80 9.20 0.346 0.362
e
HE12.80 13.40 0.504 0.528
L 2.70 3.30 0.106 0.13
L1 0.90 1.50 0.035 0.059
L2
L3
L4
Lp 0.90 1.50 0.035 0.059
x - 0.25 - 0.01
MIN MAX MIN MAX
b5 - 1.23 - 0.049
b6 - 10.40 - 0.409
l1 - 2.10 - 0.083
l2 - 7.55 - 0.297
l3 - 13.40 - 0.528
1.10
0.043
DIM
MILIMETERS
INCHES
8.90
0.35
2.54
0.10
0.25
0.01
1.00
0.039
DIM
MILIMETERS
INCHES
7.25
0.285
Patterm of terminal position areas
13/13
2012.07 - Rev.B
R1120A
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"Products"). If you wish to use any such Product, please be sure to refer to the specications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specied in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specied herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
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Please be sure to implement in your equipment using the Products safety measures to guard
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