TGF3020-
SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched
Transistor
Datasheet Rev. B, October 24
, 2017 | Subject to change without notice
- 1 of 24 -
www.qorvo.com
3 x 3mm QFN package
Product Overview
The Qorvo TGF3020-SM is a 5W (P
3dB
), 50
Ω-
input matched
discrete GaN on SiC HEMT which operates from 4.0 to 6
.0
GHz.
The integrated input matching network enables
wideband gain and power performance, while the output can
be matched on board to optimize power and efficiency for
any region within the band.
The device is housed in an industry-
standard 3 x 3 mm
surface mount QFN package.
Lead-free and ROHS compliant
Evaluation boards are available upon request.
Functional Block Diagram
Key Features
• Frequency: 4 to 6 GHz
• Output Power (P
3dB
)
1
: 6.8 W
• Linear Gain
1
: 13 dB
• Typical PAE
3dB1
: 60%
• Operating Voltage: 32 V
• CW and Pulse capable
Note 1: @ 5 GHz Load Pull
Ordering info
Part No. ECCN Description
TGF3020-SM
EAR99
QFN Packaged Part
TGF3020-
SMEVBP01 EAR99 5.3 – 5.9 GHz EVB
TGF3020-
SMEVBP02 EAR99 4 – 6 GHz EVB
Applications
• Telemetry
• C-band radar
• Communications
• Test instrumentation
• Wideband amplifiers
• 5.8GHz ISM
1
2
3
49
10
11
12
Input
Matching
NW
5 6 7 8
16 15 14 13
TGF3020-
SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched
Transistor
Datasheet Rev. B, October 24
, 2017 | Subject to change without notice
- 2 of 24 -
www.qorvo.com
Absolute Maximum Ratings
1
Parameter Rating Units
Breakdown Voltage,BV
DG
+100 V
Gate Voltage Range, V
G
-7 to +2.0 V
Drain Current, I
DMAX
0.6 A
Gate Current Range, I
G
See page 16. mA
Power Dissipation, P
DISS2
7.5 W
RF Input Power, CW, T =
25 °C +30 dBm
Channel Temperature, T
CH
275 °C
Mounting Temperature
(30 Seconds) 320
°C
Storage Temperature −65 to +150 °C
Notes:
1.
Operation of this device outside the parameter ranges
given above may cause permanent damage.
2.
Pulsed 100uS PW, 20% DC
Recommended Operating Conditions
1
Parameter Min
Typ
Max
Units
Operating Temp. Range −40 +25 +85 °C
Drain Voltage Range, V
D
+12 +32 +40 V
Drain Bias Current, I
DQ
25 mA
Drain Current, I
D4
– 0.25 – A
Gate Voltage, V
G3
– −2.8 – V
Channel Temperature (T
CH
) – – 225 °C
Power Dissipation (P
D
)
2,4
– – 9.1 W
Power Dissipation (P
D
), CW
2
– – 6.5 W
Notes:
1. Electrical performance is measured under conditions noted
in the electrical specifications table. Specifications are not
guaranteed over all recommended operating conditions.
2. Package base at 85 °C
3. To be adjusted to desired I
DQ
4. Pulsed, 100uS PW, 20% DC
Measured Load Pull Performance – Power Tuned
1
, 2
Parameter Typical Values Units
Frequency, F 4 4.4 5 5.5 GHz
Drain Voltage, V
D
32 32 32 32 V
Drain Bias Current, I
DQ
25 25 25 25 mA
Output Power at 3dB
compression, P
3dB
38.4 38.3 38.3 38.2 dBm
Power Added Efficiency at 3dB
compression, PAE
3dB
50.1 50.4 49.5 53.0 %
Gain at 3dB compression, G
3dB
9.6 9.7 9.7 10.3 dB
Notes:
1. Pulsed, 100 uS Pulse Width, 20% Duty Cycle
2.
Load
-
pull c
haracteristic I
mpedance, Zo =
50
Ω.
Measured Load Pull Performance – Efficiency Tuned
1, 2
Parameter Typical Values Units
Frequency, F 2.7 2.9 3.1 3.3 GHz
Drain Voltage, V
D
32 32 32 32 V
Drain Bias Current, I
DQ
25 25 25 25 mA
Output Power at 3dB
compression, P
3dB
37.6 36.8 37.1 36.8 dBm
Power Added Efficiency at 3dB
compression, PAE
3dB
60.1 61.5 59.6 59 %
Gain at 3dB compression, G
3dB
10.3 10.3 10.1 10.7 dB
Notes:
1. Pulsed, 100 uS Pulse Width, 20% Duty Cycle
2.
Load
-
pull c
haracteristic Imp
edance, Zo = 50
Ω.
TGF3020-
SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched
Transistor
Datasheet Rev. B, October 24
, 2017 | Subject to change without notice
- 3 of 24 -
www.qorvo.com
RF Characterization 5.3 – 5.9 GHz EVB – 5.4 GHz Performance
1
Parameter Min Typ Max Units
Linear Gain, G
LIN
– 11.7 – dB
Output Power at 3dB compression point, P3dB – 5.7 – W
Drain Efficiency at 3dB compression point,
DEFF3dB – 53.1 – %
Gain at 3dB compression point, G3dB – 8.7 – dB
Notes:
1.
V
D
= +32 V, I
DQ
= 250 mA, Temp = +25 °C, Pulse Width = 100 uS, Duty Cycle = 20%
RF Characterization 5.3 – 5.9 GHz EVB – 5.4 GHz Performance
1
Parameter Min Typ Max Units
Linear Gain, G
LIN
– 11.7 – dB
Output Power at 3dB compression point, P3dB – 5.7 – W
Drain Efficiency at 3dB compression point,
DEFF3dB – 53.1 – %
Gain at 3dB compression point, G3dB – 8.7 – dB
Notes:
1.
V
D
= +32 V, I
DQ
= 250 mA, Temp = +25 °C, Pulse Width = 100 uS, Duty Cycle = 20%
RF Characterization 4 – 6.0 GHz EVB – 4.7 GHz Performance
1
Parameter Min Typ Max Units
Linear Gain, G
LIN
– 11.8 – dB
Output Power at 3dB compression point, P3dB – 5.6 – W
Drain Efficiency at 3dB compression point,
DEFF3dB – 51.7 – %
Gain at 3dB compression point, G3dB – 8.8 – dB
Notes:
1.
V
D
= +32 V, I
DQ
= 25 mA, Temp = +25 °C, Pulse Width = 100 uS, Duty Cycle = 20%
RF Characterization 5.3 – 5.9 GHz EVB – 5.4 GHz Performance
1
Parameter Min Typ Max Units
Linear Gain, G
LIN
– 11.7 – dB
Output Power at 3dB compression point, P3dB – 5.7 – W
Drain Efficiency at 3dB compression point,
DEFF3dB – 53.1 – %
Gain at 3dB compression point, G3dB – 8.7 – dB
Notes:
1.
V
D
= +32 V, I
DQ
= 25 mA, Temp = +25 °C, Pulse Width = 100 uS, Duty Cycle = 20%
RF Characterization – Mismatch Ruggedness at 5.3 and 5.9 GHz
Symbol Parameter dB Compression Typical
VSWR
Impedance Mismatch Ruggedness 3 10:1
Test conditions unless otherwise noted: T
A
= 25 °C, V
D
= 32 V, I
DQ
= 25 mA
Input drive power is determined at pulsed 3dB compression under matched condition at EVB output connector.
TGF3020-
SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched
Transistor
Datasheet Rev. B, October 24
, 2017 | Subject to change without notice
- 4 of 24 -
www.qorvo.com
Measured Load-Pull Smith Charts
1, 2
Notes:
1. Test Conditions: V
D
= 32 V, I
DQ
= 25 mA, 100 uS Pulse Width, 20% Duty Cycle
2. See page 17 for load pull reference planes where the performance was measured.
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.2
4GHz, Load-pull
38.4
38.2
38
10
9.5
9
58.7
52.7 50.7 48.7
•
••
•
Max Power is 38.4dBm
at Z = 24.344+16.398i
Ω
ΩΩ
Ω
Γ
ΓΓ
Γ
= -0.2827+0.2829i
•
••
•
Max Gain is 10.3dB
at Z = 17.146+29.144i
Ω
ΩΩ
Ω
Γ
ΓΓ
Γ
= -0.2532+0.5439i
•
••
•
Max PAE is 60.1%
at Z = 17.146+29.144i
Ω
ΩΩ
Ω
Γ
ΓΓ
Γ
= -0.2532+0.5439i
Zo = 50
Ω
ΩΩ
Ω
3dB Compression Referenced to Peak Gain
Zs(1fo) = 23.25-20.34i
Ω
ΩΩ
Ω
Zs(2fo) = 21.61+5.89i
Ω
ΩΩ
Ω
Power
Gain
PAE
TGF3020-
SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched
Transistor
Datasheet Rev. B, October 24
, 2017 | Subject to change without notice
- 5 of 24 -
www.qorvo.com
Measured Load-Pull Smith Charts
1, 2
Notes:
1. Test Conditions: V
D
= 32 V, I
DQ
= 25 mA, 100 uS Pulse Width, 20% Duty Cycle
2. See page 17 for load pull reference planes where the performance was measured.
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.2
0.5
4.4GHz, Load-pull
38.1
37.9
37.7
9.81
9.31
8.81
60.7
52.7 50.7 48.7
•
••
•
Max Power is 38.3dBm
at Z = 24.314+16.373i
Ω
ΩΩ
Ω
Γ
ΓΓ
Γ
= -0.2833+0.2827i
•
••
•
Max Gain is 10.3dB
at Z = 15.641+24.03i
Ω
ΩΩ
Ω
Γ
ΓΓ
Γ
= -0.3434+0.4918i
•
••
•
Max PAE is 61.5%
at Z = 10.956+24.122i
Ω
ΩΩ
Ω
Γ
ΓΓ
Γ
= -0.4184+0.5613i
Zo = 50
Ω
ΩΩ
Ω
3dB Compression Referenced to Peak Gain
Zs(1fo) = 24-22.43i
Ω
ΩΩ
Ω
Zs(2fo) = 42.06-1.87i
Ω
ΩΩ
Ω
Power
Gain
PAE
TGF3020-
SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched
Transistor
Datasheet Rev. B, October 24
, 2017 | Subject to change without notice
- 6 of 24 -
www.qorvo.com
Measured Load-Pull Smith Charts
1, 2
Notes:
1. Test Conditions: V
D
= 32 V, I
DQ
= 25 mA, 100 uS Pulse Width, 20% Duty Cycle
2. See page 17 for load pull reference planes where the performance was measured.
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.2
5GHz, Load-pull
38.3
38.1
37.9
10.3
9.75
9.25
57.8
51.8
49.8
47.8
•
••
•
Max Power is 38.3dBm
at Z = 22.515+10.159i
Ω
ΩΩ
Ω
Γ
ΓΓ
Γ
= -0.3525+0.1895i
•
••
•
Max Gain is 10.3dB
at Z = 14.48+19.192i
Ω
ΩΩ
Ω
Γ
ΓΓ
Γ
= -0.4247+0.424i
•
••
•
Max PAE is 59.6%
at Z = 9.755+15.964i
Ω
ΩΩ
Ω
Γ
ΓΓ
Γ
= -0.562+0.4173i
Zo = 50
Ω
ΩΩ
Ω
3dB Compression Referenced to Peak Gain
Zs(1fo) = 24.62-23.64i
Ω
ΩΩ
Ω
Zs(2fo) = 51.59+26.01i
Ω
ΩΩ
Ω
Power
Gain
PAE
TGF3020-
SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched
Transistor
Datasheet Rev. B, October 24
, 2017 | Subject to change without notice
- 7 of 24 -
www.qorvo.com
Measured Load-Pull Smith Charts
1, 2
Notes:
1. Test Conditions: V
D
= 32 V, I
DQ
= 25 mA, 100 uS Pulse Width, 20% Duty Cycle
2. See page 17 for load pull reference planes where the performance was measured.
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.2
5.5GHz, Load-pull
38.1
37.9
37.7
10.6
10.1
9.58
56.9 54.9
52.9
34.9
•
••
•
Max Power is 38.2dBm
at Z = 17.137+7.844i
Ω
ΩΩ
Ω
Γ
ΓΓ
Γ
= -0.4694+0.1717i
•
••
•
Max Gain is 10.7dB
at Z = 9.368+12.204i
Ω
ΩΩ
Ω
Γ
ΓΓ
Γ
= -0.6161+0.3322i
•
••
•
Max PAE is 59%
at Z = 9.368+12.204i
Ω
ΩΩ
Ω
Γ
ΓΓ
Γ
= -0.6161+0.3322i
Zo = 50
Ω
ΩΩ
Ω
3dB Compression Referenced to Peak Gain
Zs(1fo) = 26.09-30.79i
Ω
ΩΩ
Ω
Zs(2fo) = 53.69+46.74i
Ω
ΩΩ
Ω
Power
Gain
PAE
TGF3020-
SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched
Transistor
Datasheet Rev. B, October 24
, 2017 | Subject to change without notice
- 8 of 24 -
www.qorvo.com
Typical Measured Performance – Load-Pull Drive-up
1, 2
Notes:
1. Pulsed signal with 100uS pulse width and 20% duty cycle
2. See page 17 for load pull and source pull reference planes.
27 28 29 30 31 32 33 34 35 36 37 38 39
6
7
8
9
10
11
12
13
14
15
16
Output Power [dBm]
Gain [dB]
Gain and PAE vs. Output Power
4 GHz - Power Tuned
Zs(1fo) = 23.25-20.34i
Ω
ΩΩ
Ω
Zs(2fo) = 21.61+5.89i
Ω
ΩΩ
Ω
Zl(1fo) = 24.34+16.4i
Ω
ΩΩ
Ω
27 28 29 30 31 32 33 34 35 36 37 38 39
10
15
20
25
30
35
40
45
50
55
60
PAE [%]
Gain
PAE
27 28 29 30 31 32 33 34 35 36 37 38
6
7
8
9
10
11
12
13
14
15
16
Output Power [dBm]
Gain [dB]
Gain and PAE vs. Output Power
4 GHz - Efficiency Tuned
Zs(1fo) = 23.25-20.34iΩ
ΩΩ
Ω
Zs(2fo) = 21.61+5.89iΩ
ΩΩ
Ω
Zl(1fo) = 17.15+29.14iΩ
ΩΩ
Ω
27 28 29 30 31 32 33 34 35 36 37 38
20
25
30
35
40
45
50
55
60
65
70
PAE [%]
Gain
PAE
27 28 29 30 31 32 33 34 35 36 37 38 39
6
7
8
9
10
11
12
13
14
15
16
Output Power [dBm]
Gain [dB]
Gain and PAE vs. Output Power
4.4 GHz - Power Tuned
Zs(1fo) = 24-22.43iΩ
ΩΩ
Ω
Zs(2fo) = 42.06-1.87iΩ
ΩΩ
Ω
Zl(1fo) = 24.31+16.37iΩ
ΩΩ
Ω
27 28 29 30 31 32 33 34 35 36 37 38 39
10
15
20
25
30
35
40
45
50
55
60
PAE [%]
Gain
PAE
27 28 29 30 31 32 33 34 35 36 37 38
6
7
8
9
10
11
12
13
14
15
16
Output Power [dBm]
Gain [dB]
Gain and PAE vs. Output Power
4.4 GHz - Efficiency Tuned
Zs(1fo) = 24-22.43iΩ
ΩΩ
Ω
Zs(2fo) = 42.06-1.87iΩ
ΩΩ
Ω
Zl(1fo) = 10.96+24.12iΩ
ΩΩ
Ω
27 28 29 30 31 32 33 34 35 36 37 38
20
25
30
35
40
45
50
55
60
65
70
PAE [%]
Gain
PAE
TGF3020-
SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched
Transistor
Datasheet Rev. B, October 24
, 2017 | Subject to change without notice
- 9 of 24 -
www.qorvo.com
Typical Measured Performance – Load-Pull Drive-up
1, 2
Notes:
1. Pulsed signal with 100uS pulse width and 20% duty cycle
2. See page 17 for load pull and source pull reference planes.
27 28 29 30 31 32 33 34 35 36 37 38 39
6
7
8
9
10
11
12
13
14
15
16
Output Power [dBm]
Gain [dB]
Gain and PAE vs. Output Power
5 GHz - Power Tuned
Zs(1fo) = 24.62-23.64iΩ
ΩΩ
Ω
Zs(2fo) = 51.59+26.01iΩ
ΩΩ
Ω
Zl(1fo) = 22.52+10.16iΩ
ΩΩ
Ω
27 28 29 30 31 32 33 34 35 36 37 38 39
10
15
20
25
30
35
40
45
50
55
60
PAE [%]
Gain
PAE
27 28 29 30 31 32 33 34 35 36 37 38
6
7
8
9
10
11
12
13
14
15
16
Output Power [dBm]
Gain [dB]
Gain and PAE vs. Output Power
5 GHz - Efficiency Tuned
Zs(1fo) = 24.62-23.64iΩ
ΩΩ
Ω
Zs(2fo) = 51.59+26.01iΩ
ΩΩ
Ω
Zl(1fo) = 9.76+15.96iΩ
ΩΩ
Ω
27 28 29 30 31 32 33 34 35 36 37 38
20
25
30
35
40
45
50
55
60
65
70
PAE [%]
Gain
PAE
27 28 29 30 31 32 33 34 35 36 37 38 39
6
7
8
9
10
11
12
13
14
15
16
Output Power [dBm]
Gain [dB]
Gain and PAE vs. Output Power
5.5 GHz - Power Tuned
Zs(1fo) = 26.09-30.79i
Ω
ΩΩ
Ω
Zs(2fo) = 53.69+46.74i
Ω
ΩΩ
Ω
Zl(1fo) = 17.14+7.84i
Ω
ΩΩ
Ω
27 28 29 30 31 32 33 34 35 36 37 38 39
10
15
20
25
30
35
40
45
50
55
60
PAE [%]
Gain
PAE
27 28 29 30 31 32 33 34 35 36 37 38
6
7
8
9
10
11
12
13
14
15
16
Output Power [dBm]
Gain [dB]
Gain and PAE vs. Output Power
5.5 GHz - Efficiency Tuned
Zs(1fo) = 26.09-30.79i
Ω
ΩΩ
Ω
Zs(2fo) = 53.69+46.74i
Ω
ΩΩ
Ω
Zl(1fo) = 9.37+12.2i
Ω
ΩΩ
Ω
27 28 29 30 31 32 33 34 35 36 37 38
20
25
30
35
40
45
50
55
60
65
70
PAE [%]
Gain
PAE
TGF3020-
SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched
Transistor
Datasheet Rev. B, October 24
, 2017 | Subject to change without notice
- 10 of 24 -
www.qorvo.com
Power Driveup Performance Over Temperatures Of 5.3 – 5.9 GHz EVB
1, 2
Notes:
1. Test Conditions: V
D
= 32 V, I
DQ
= 25 mA, 20 uS Pulse Width, 20% Duty Cycle
2. The dissipation power limit is conservative because it is specified at DUT only without accounting for the loss of the output matching
network.
0
10
20
30
40
50
60
70
80
90
100
5.3 5.4 5.5 5.6 5.7 5.8 5.9
-40°C
-20°C
0°C
25°C
45°C
65°C
85°C
Drain Efficiency @ 3dB Over Temperatures
Frequency [GHz]
DrainEff3dB [%]
0
1
2
3
4
5
6
7
8
9
10
5.3 5.4 5.5 5.6 5.7 5.8 5.9
-40°C
-20°C
0°C
25°C
45°C
65°C
85°C
P3dB Over Temperatures
Frequency [GHz]
P3dB [W]
5
6
7
8
9
10
11
12
13
14
15
5.3 5.4 5.5 5.6 5.7 5.8 5.9
-40°C
-20°C
0°C
25°C
45°C
65°C
85°C
G3dB Over Temperatures
Frequency [GHz]
G3dB [dB]
0
1
2
3
4
5
6
7
8
9
10
5.3 5.4 5.5 5.6 5.7 5.8 5.9
-40°C -20°C 0°C
25°C 45°C 65°C
85°C
PDISS3dB Over Temperatures
Frequency [GHz]
PDISS3dB [W]
TGF3020-
SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched
Transistor
Datasheet Rev. B, October 24
, 2017 | Subject to change without notice
- 11 of 24 -
www.qorvo.com
Power Driveup Performance At 25°C Of 5.3 – 5.9 GHz EVB
1, 2
Notes:
1. Test Conditions: V
D
= 32 V, I
DQ
= 25 mA, 20 uS Pulse Width, 20% Duty Cycle
2. The dissipation power limit is conservative because it is specified at DUT only without accounting for the loss of the output matching
network..
0
10
20
30
40
50
60
70
80
90
100
5.3 5.4 5.5 5.6 5.7 5.8 5.9
3dB Drain
Efficiency
at 25
°
C
DrainEff3dB
[%]
Frequency [GHz]
5
6
7
8
9
10
11
12
13
14
15
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
5.3 5.4 5.5 5.6 5.7 5.8 5.9
P3dB
G3dB
P3dB and G3dB at 25
°
C
G3dB [dB]
P3dB [W]
Frequency [GHz]
0
1
2
3
4
5
6
7
8
9
10
5.3 5.4 5.5 5.6 5.7 5.8 5.9
PDISS3dB Over at 25°C
Frequency [GHz]
PDISS3dB [W]
TGF3020-
SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched
Transistor
Datasheet Rev. B, October 24
, 2017 | Subject to change without notice
- 12 of 24 -
www.qorvo.com
Power Driveup Performance At 25°C Of 4 – 6 GHz EVB
1, 2
Notes:
1. Test Conditions: V
D
= 32 V, I
DQ
= 25 mA, 100 uS Pulse Width, 20% Duty Cycle
2. The dissipation power limit is conservative because it is specified at DUT only without accounting for the loss of the output matching
network..
5
6
7
8
9
10
11
12
13
14
15
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
4 4.2 4.4 4.6 4.8 5 5.2 5.4 5.6 5.8 6
P3dB
G3dB
P3dB and G3dB at 25
°
C
G3dB [dB]
P3dB [W]
Frequency [GHz]
0
10
20
30
40
50
60
70
80
90
100
4 4.2 4.4 4.6 4.8 5 5.2 5.4 5.6 5.8 6
3dB Drain
Efficiency
at 25
°
C
DrainEff3dB
[%]
Frequency [GHz]
0
1
2
3
4
5
6
7
8
9
10
4 4.2 4.4 4.6 4.8 5 5.2 5.4 5.6 5.8 6
PDISS3dB at 25
°
C
PDISS3dB [W]
Frequency [GHz]
TGF3020-
SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched
Transistor
Datasheet Rev. B, October 24
, 2017 | Subject to change without notice
- 13 of 24 -
www.qorvo.com
Thermal and Reliability Information – Pulsed
1, 2
Parameter Conditions Values Units
Thermal Resistance, FEA (θ
JC
)
85 °C Case
7.6 W Pdiss, 100 uS PW, 5% DC
15.0 °C/W
Peak Channel Temperature, FEA (T
CH
) 199 °C
Median Lifetime, FEA (T
M
)
2
1.7E7 Hrs
Peak Channel Temperature, IR 160 °C
Thermal Resistance, FEA (θ
JC
)
85 °C Case
7.6 W Pdiss, 100 uS PW, 10% DC
15.4 °C/W
Peak Channel Temperature, FEA (T
CH
) 202 °C
Median Lifetime, FEA (T
M
)
2
1.3E7 Hrs
Peak Channel Temperature, IR 162 °C
Thermal Resistance, FEA (θ
JC
)
85 °C Case
7.6 W Pdiss, 100 uS PW, 20% DC
16.1 °C/W
Peak Channel Temperature, FEA (T
CH
) 207 °C
Median Lifetime, FEA (T
M
)
2
8.4E6 Hrs
Peak Channel Temperature, IR 165 °C
Thermal Resistance, FEA (θ
JC
)
85 °C Case
7.6 W Pdiss, 100 uS PW, 50% DC
18.0 °C/W
Peak Channel Temperature, FEA (T
CH
) 222 °C
Median Lifetime, FEA (T
M
)
2
2.3E6 Hrs
Peak Channel Temperature, IR 173 °C
Note:
1. FEA: Finite Element Analysis Method, IR: Infra-Red Method
2. Median Lifetime under pulsed condition is that under CW condition divided by duty cycle.
120
130
140
150
160
170
180
190
200
210
220
230
240
250
260
1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02
Maximum Channel Temperature (
o
C)
Pulse Width (sec)
Maximum Channel Temperature
QFN base fixed at 85
o
C, Pdiss = 7.6 W
5% Duty Cycle
10% Duty Cycle
20% Duty Cycle
50% Duty Cycle
TGF3020-
SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched
Transistor
Datasheet Rev. B, October 24
, 2017 | Subject to change without notice
- 14 of 24 -
www.qorvo.com
Thermal and Reliability Information – CW
1
Parameter Conditions Values Units
Thermal Resistance, FEA (θ
JC
)
85 °C Case
2.52 W Pdiss
17.9 °C/W
Peak Channel Temperature, FEA (T
CH
) 130 °C
Median Lifetime, FEA (T
M
)
2
2.7E10 Hrs
Peak Channel Temperature, IR 116 °C
Thermal Resistance, FEA (θ
JC
)
85 °C Case
3.78 W Pdiss
18.8 °C/W
Peak Channel Temperature, FEA (T
CH
) 156 °C
Median Lifetime, FEA (T
M
)
2
1.3E9 Hrs
Peak Channel Temperature, IR 133 °C
Thermal Resistance, FEA (θ
JC
)
85 °C Case
5.04 W Pdiss
19.8 °C/W
Peak Channel Temperature, FEA (T
CH
) 185 °C
Median Lifetime, FEA (T
M
)
2
6.5E7 Hrs
Peak Channel Temperature, IR 152 °C
Thermal Resistance, FEA (θ
JC
)
85 °C Case
6.30 W Pdiss
21.1 °C/W
Peak Channel Temperature, FEA (T
CH
) 218 °C
Median Lifetime, FEA (T
M
)
2
3.3E6 Hrs
Peak Channel Temperature, IR 171 °C
Note:
1. FEA: Finite Element Analysis Method, IR: Infra-Red Method
80
90
100
110
120
130
140
150
160
170
180
190
200
210
220
230
240
250
260
1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5
Peak Temperature, C
CW Power Dissipation, W
Peak Temperature vs. CW Power - QFN base = 85C
TGF3020-
SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched
Transistor
Datasheet Rev. B, October 24
, 2017 | Subject to change without notice
- 15 of 24 -
www.qorvo.com
Median Lifetime
1
Notes:
1.
Test Conditions: V
D
= +32 V; Failure Criteria = 10 % reduction in I
D_MAX
during DC Life Testing
.
TGF3020-
SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched
Transistor
Datasheet Rev. B, October 24
, 2017 | Subject to change without notice
- 16 of 24 -
www.qorvo.com
Maximum Gate Current
0
1
2
3
4
5
6
7
8
9
10
120 130 140 150 160 170 180 190 200 210 220 230
Maximum Gate Current [mA]
Channel Temperature [°C]
Maximum Gate Current Vs. Channel Temperature
TGF3020-
SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched
Transistor
Datasheet Rev. B, October 24
, 2017 | Subject to change without notice
- 17 of 24 -
www.qorvo.com
Note 1: Grounding pin 6 will cause performance degradation.
Pin Configuration and Description
1
Note 1: The TGF3020-SM will be marked with the “TGF3020
” designator and a lot code marked below the part designator.
The “YY” represents the last two digits of the calendar year the part was manufactured, the “WW” is the work week of the
assembly lot start, the MXXX” is the production lot number.
Pin Symbol Description
2, 3 RF IN / V
G
Gate
10, 11 RF OUT / V
D
Drain
1, 4, 5, 6, 7, 8, 9, 12, 13,
14,
15, 16
NC No Connection
1
Source Source / Ground / Backside of part
TGF3020-
SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched
Transistor
Datasheet Rev. B, October 24
, 2017 | Subject to change without notice
- 18 of 24 -
www.qorvo.com
Mechanical Drawing
1
Note 1:
Unless otherwise noted, all dimention tolerances are +/-0.127 mm.
This package is lead-free/RoHS-compliant. The plating material on the leads is NiAu. It is compatible with both lead-free (maximum
260 °C reflow temperature) and tin-lead (maximum 245°C reflow temperature) soldering processes.
TGF3020-
SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched
Transistor
Datasheet Rev. B, October 24
, 2017 | Subject to change without notice
- 19 of 24 -
www.qorvo.com
5.3 – 5.9 GHz Application Circuit - Schematic
Bias-up Procedure Bias-down Procedure
1. Set V
G
to -3.5 V. 1. Turn off RF signal.
2. Set I
D
current limit to 30 mA. 2. Turn off V
D
3.
Apply 32
V V
D
.
3.
Wait 2 seconds to allow drain capacitor to discharge
.
4. Slowly adjust V
G
until I
D
is set to 25 mA. 4. Turn off V
G
5. Set I
D
current limit to 0.3 A (Pulsed operation.)
6. Apply RF.
TGF3020-
SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched
Transistor
Datasheet Rev. B, October 24
, 2017 | Subject to change without notice
- 20 of 24 -
www.qorvo.com
3.1 – 3.5 GHz Application Circuit - Bill of Materials
Reference Design
Value Qty Manufacturer Part Number
R1
10
Ω
1 Generic 0603
R2
1
k
Ω
1 Generic 0603
C1, C5 0.2 pF 2 PPI 0603N0R2AW251X
C2 0.3 pF 1 PPI 0603N0R3AW251X
C3, C4 5.1 pF 2 PPI 0603N5R1AW251X
C6, C7, C8 3.3 pF 3 PPI 0603N3R3AW251X
C11 220 uF 1 United Chemicon EMVY500ADA221MJA0G
C9 10 uF 1 TDK C1632X5R0J106M130AC
C10 1 uF 1 AVX 18121C105KAT2A
L1 3.9nH 1 CoilCraft 0603CS-3N9X_E
L2 2.2nH 1 CoilCraft 0603CS-2N2X_E
3.1 – 3.5 GHz Application Circuit - Layout
Board material is RO4350B 0.020” thickness with 1oz copper cladding. Overall EVB size is 2” x 2.5”.
TGF3020-
SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched
Transistor
Datasheet Rev. B, October 24
, 2017 | Subject to change without notice
- 21 of 24 -
www.qorvo.com
4 – 6 GHz Application Circuit - Schematic
Bias-up Procedure Bias-down Procedure
2. Set V
G
to -4 V. 3. Turn off RF signal.
4. Set I
D
current limit to 30 mA. 4. Turn off V
D
5.
Apply 32
V V
D
.
5.
Wait 2 seconds to allow drain capacitor to discharge
.
6. Slowly adjust V
G
until I
D
is set to 25 mA. 7. Turn off V
G
8. Set I
D
current limit to 0.3 A (Pulsed operation.)
9. Apply RF.
TGF3020-
SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched
Transistor
Datasheet Rev. B, October 24
, 2017 | Subject to change without notice
- 22 of 24 -
www.qorvo.com
4 – 6 GHz Application Circuit - Layout
Board material is RO4350B 0.020” thickness with 1oz copper cladding. Overall EVB size is 2” x 2.5”.
4 – 6 GHz Application Circuit - Bill of Materials
Reference Design
Value Qty Manufacturer Part Number
R1
10
Ω
1 Generic 0603
R2
1
k
Ω
1 Generic 0603
C1 0.2 pF 1 PPI 0603N0R2AW251X
C2 0.3 pF 1 PPI 0603N0R3AW251X
C3 5.1 pF 1 PPI 0603N5R1AW251X
C4 10 pF 1 PPI 0603N100AW251X
C6, C7, C8 3.3 pF 3 PPI 0603N3R3AW251X
C11 220 uF 1 United Chemicon EMVY500ADA221MJA0G
C9 10 uF 1 TDK C1632X5R0J106M130AC
C10 1 uF 1 AVX 18121C105KAT2A
L1 3.9nH 1 CoilCraft 0603CS-3N9X_E
L2 1.8nH 1 CoilCraft 0603CS-1N8X_E
TGF3020-
SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched
Transistor
Datasheet Rev. B, October 24
, 2017 | Subject to change without notice
- 23 of 24 -
www.qorvo.com
Recommended Solder Temperature Profile
TGF3020-
SM
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched
Transistor
Datasheet Rev. B, October 24
, 2017 | Subject to change without notice
- 24 of 24 -
www.qorvo.com
Handling Precautions
Parameter Rating Standard
Caution!
ESD-Sensitive Device
ESD – Human Body Model (HBM) Class 1B ESDA / JEDEC JS-001-2012
ESD – Charged Device Model (CDM) Class C3 JEDEC JESD22-C101F
MSL – Moisture Sensitivity Level 3 @ 260°C
IPC/JEDEC J-STD-020
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information ab
out
Qorvo:
Web: www.Qorvo.com Tel: +1.972.994.8465
Email: info-sales@qorvo.com Fax: +1.972.994.8504
For technical questions and application information: Email: info-products@qorvo.com
Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information con
tained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All informatio
n contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing
orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly
or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anythin
g described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO T
HE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical componen
ts in medical,
life-saving, or life-sustaining applications, or other application
s where a failure would reasonably be expected to cause severe personal
injury or death.
Copyright 2016 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.
Solderability
Compatible with both lead-free (260°C max. reflow temp.) and tin/lead (245°C max. reflow temp.) soldering processes.
Solder profiles available upon request.
Contact plating: NiPdAu
RoHS Compliance
This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electr
ical and
Electronic Equipment) as amended by Directive 2015/863/EU.
This product also has the following attributes:
•
Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C
15
H
12
Br
4
0
2
) Free
• PFOS Free
• SVHC Free
Pb
