Discrete POWER & Signal FAIRCHILD Technologies ee SEMICONDUCTOR iu NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Sourced from Process 23. See 2N3904 for characteristics. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units Voeo Collector-Emitter Voltage 40 Vv Vcso Collector- Base Voltage 60 Vv VeBo Emitter-Base Voltage 6.0 Vv Io Collector Current - Continuous 200 mA Ty, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units 2N3903 Pp Total Device Dissipation 625 mW Derate above 25C 5.0 mw/C Rac Thermal Resistance, Junction to Case 83.3 C/W Roa Thermal Resistance, Junction to Ambient 200 C/W CO6ENZS 1997 Fairchild Semiconductor CorporationElectrical Characteristics NPN General Purpose Amplifier TA = 25C unless otherwise noted (continued) Symbol Parameter Test Conditions Min Max | Units OFF CHARACTERISTICS Vier)cEo Collector-Emitter Breakdown Voltage* | Ic = 1.0 mA, Ip =0 40 Vv Visrycso Collector-Base Breakdown Voltage lo=10 pA, |IE=0 60 Vv Visr)eB0 Emitter-Base Breakdown Voltage le=10pA, lh=0 6.0 Vv loex Collector Cutoff Current Voe = 30 V, Vop = 3.0 V 50 nA IBL Base Cutoff Current Voce = 30 V, Vop = 3.0 V 50 nA ON CHARACTERISTICS* Hee DC Current Gain Voce = 1.0 V, lo = 0.1 mA 20 Voe = 1.0 V, lp = 1.0mA 35 Vcr = 1.0 V, le = 10 mA 50 150 Voe = 1.0 V, lp = 50 mA 30 Vee = 1.0 V, Ip = 100 mA 15 Vee(sat) Collector-Emitter Saturation Voltage lo = 10 mA, Ig = 1.0 mA 0.2 Vv lc = 50 mA, Ip = 5.0 mA 0.3 Vv Vec(sat) Base-Emitter Saturation Voltage lo = 10 mA, Ig = 1.0 MA 0.65 0.85 Vv lc = 50 mA, Ip = 5.0 mA 0.95 Vv SMALL SIGNAL CHARACTERISTICS Cob Output Capacitance Ves = 5.0 V, f = 100 kHz 4.0 pF Cip Input Capacitance Veg = 0.5 V, f = 100 kHz 8.0 pF he Small-Signal Current Gain lo = 10 mA, Voge = 20 V, 25 f= 100 MHz He Small-Signal Current Gain Voe=10V, le = 1.0 mA 50 200 hie Input Impedance f = 1.0 kHz 1.0 8.0 kQ hre Voltage Feedback Ratio 0.1 50 x 10 Hoe Output Admittance 1.0 40 uumhos NF Noise Figure Voe = 5.0 V, Ic = 100 LA, 6.0 dB Rs= 1.0 kQ, Bw = 10 Hz to 15.7 kHz SWITCHING CHARACTERISTICS ty Delay Time Voc = 3.0 V, Ip = 10 mA, 35 ns t Rise Time Ip: = 1.0MA, Vob( off) = 0.5 V 35 ns ts Storage Time Voc = 3.0 V, lp = 10 MA 175 ns t Fall Time let = Ip2 = 1.0mMA 50 ns *Pulse Test: Pulse Width < 300 ys, Duty Cycle < 2.0% CO6ENZS