TPCF8003
2010-01-14
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)
TPCF8003
Notebook PC Applications
Portable Equipment Applications
• Small footprint due to small and thin package
• Low drain-source ON-resistance: RDS (ON) =14 mΩ (typ.)
（VGS= 4.5V）
• Low leakage current: IDSS = 10 μA (max) (VDS = 20 V)
• Enhancement mode: Vth = 0.5 to 1.2 V
(VDS = 10 V, ID = 200 μA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDSS 20 V
Drain-gate voltage (RGS = 20 kΩ) VDGR 20 V
Gate-source voltage VGSS ±12 V
DC (Note 1) ID 7
Drain current
Pulse (Note 1) IDP 28
A
Drain power dissipation (t = 5 s)
(Note 2a)
PD 2.5 W
Drain power dissipation (t = 5 s)
(Note 2b)
PD 0.7 W
Single pulse avalanche energy (Note 3) EAS 3.2 mJ
Avalanche current IAR 3.5 A
Channel temperature Tch 150 °C
Storage temperature range Tstg −55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics Circuit Configuration
Characteristics Symbol Max Unit
Thermal resistance, channel to ambient (t = 5 s)
(Note 2a) Rth (ch-a) 50.0 °C/W
Thermal resistance, channel to ambient (t = 5 s)
(Note 2b) Rth (ch-a) 178.6 °C/W
Note: For Notes 1 to 3, refer to the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-3U1A
Weight: 0.011 g (typ.)
1. Drain
2. Drain
3. Drain
4. Gate
5.Source
6. Drain
7. Drain
8. Drain
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TPCF8003
2010-01-14
2
Marking (Note 4)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
Note 3: VDD = 16 V, Tch = 25°C (initial), L = 0.2 mH, RG = 25 Ω, IAR = 3.5 A
Note 4: • on lower left of the marking indicates Pin 1.
Note 5: A dot marking for identifying the indication of product Labels.
Without a dot: [[Pb]]/INCLUDES > MCV
With a dot: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
(b)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(a)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
Part No.
(or abbreviation code) F2C
Note５
Lot code (month) Lot No.
Pin #1 Lot code
(year)
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Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS V
GS = ±12 V, VDS = 0 V ⎯ ⎯ ±100 nA
Drain cut-off current IDSS V
DS = 20 V, VGS = 0 V ⎯ ⎯ 10 μA
V (BR) DSS ID = 10 mA, VGS = 0 V 20 ⎯ ⎯
Drain-source breakdown voltage
V (BR) DSX ID = 10 mA, VGS = −12 V 8 ⎯ ⎯
V
Gate threshold voltage Vth V
DS = 10 V, ID = 200 μA 0.5 ⎯ 1.2 V
VGS = 2.5 V, ID = 3.5 A ⎯ 24 34
Drain-source ON-resistance RDS (ON)
VGS = 4.5 V, ID = 3.5 A ⎯ 14 18
mΩ
Input capacitance Ciss ⎯ 500 ⎯
Reverse transfer capacitance Crss ⎯ 155 ⎯
Output capacitance Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
⎯ 215 ⎯
pF
Rise time tr ⎯ 5.2 ⎯
Turn-on time ton ⎯ 11 ⎯
Fall time tf ⎯ 10 ⎯
Switching time
Turn-off time toff
Duty ≤ 1%, tw = 10 μs ⎯ 23 ⎯
ns
Total gate charge
(gate-source plus gate-drain) Qg ⎯ 9.5 ⎯
Gate-source charge 1 Qgs1 ⎯ 1.6 ⎯
Gate-drain (“miller”) charge Qgd
VDD ≈ 16 V, VGS = 5 V, ID = 7.0 A
⎯ 4 ⎯
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Drain reverse
current Pulse (Note 1) IDRP — — — 28 A
Forward voltage (diode) VDSF IDR = 7.0 A, VGS = 0 V — — −1.2 V
RL = 2.9Ω
VDD ≈ 10 V
0 V
VGS
5 V
4.7 Ω
ID = 3.5 A
VOUT
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TPCF8003
2010-01-14
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ID – VDS
5
15
10
5
0
20
0 2 4
3
1
VGS = 1.6 V
10 4.5
2.2
1.8
2
2.4
2.6
2.8
3
6
ID – VDS
5
3
2
0
4
1
0 0.2 0.4
0.6 0.8
VGS
=
1.6 V
10
1
4.5
2.2
1.7
1.8
1.9
2
2.4
2.6
2.8
3
6
1
0.1 10
1000
100
100
4.5
VGS = 2.5 V
1
10
0
0.3
0
ID = 7 A
2 4 8
1.8 3.5
0.2
10
6
0.1
0.4
0.5
0 0 1 24
14
Ta = −55°C
25
100
2
3
10
8
4
6
12
0.5 1.5 3.5 2.5
Drain-source voltage VDS (V)
Drain current ID (A)
Drain current ID (A)
RDS (ON) – ID
Drain-source ON-resistance
RDS (ON) (mΩ)
Drain-source voltage VDS (V)
Drain current ID (A)
Gate-source voltage VGS (V)
ID – VGS
Drain current ID (A)
Drain-source voltage VDS (V)
Gate-source voltage VGS (V)
VDS – VGS
Common source
Ta = 25°C
Pulse test
Common source
VDS = 10 V
Pulse test
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
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TPCF8003
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4
8
0
0
4
8
8 4
20
16
12
16
VDD = 16 V
VDS
12
0
0.8
−80 −40 0 40 80 120 160
2
0.4
1.6
1.2
1
0.1
10
1000
10000
1 10 100
Ciss
Coss
C
rss
100
0
0
−0.4
100
−0.6 −1.2
VGS = 0 V
10
4.5 2.5
1
−1
1
10
−0.2 −0.8
160 −40 0 40 80 120 −80
20
0
VGS = 4.5 V
VGS = 2.5 V
50
40
30
10
ID = 1.8, 3.5, 7 A
2.0
0
1.5
2.5
1.0
0.5
0 40 80 120 160
(1)
(2)
3.0
Drain-source voltage VDS (V)
Capacitance – VDS
Capacitance C (pF)
Drain-source voltage VDS (V)
IDR – VDS
Drain reverse current IDR (A)
Gate threshold voltage Vth (V)
Ambient temperature Ta (°C)
Vth – Ta
Ambient temperature Ta (°C)
RDS (ON) – Ta
Drain-source ON-resistance
RDS (ON) (mΩ)
Total gate charge Qg (nC)
Drain-source voltage VDS (V)
Dynamic input/output characteristics
Gate-source voltage VGS (V)
Common source
Ta = 25°C
Pulse test
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
Common source
VDS = 10 V
ID = 0.2 mA
Pulse test
Common source
Pulse test
Common source
ID = 7 A
Ta = 25°C
Pulse test
Ambient temperature Ta (°C)
PD – Ta
Drain power dissipation PD (W)
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
t = 5 s
2
0
4
10
8
6
ID = 1.8, 3.5, 7 A
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TPCF8003
2010-01-14
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t =1 ms*
VDSS max
t =10 ms*
10
100
0.1 10
1
1
100
0.1
1
0.001
10
100
1000
0.01 0.1 1 10 100 1000
(2)
(1)
0.1
Transient thermal impedance
rth (°C/W)
Pulse width tw (s)
rth – tw
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
Single - pulse
Drain current ID (A)
Drain-source voltage VDS (V)
Safe operating area
ID max (Pulse) *
* Single-pulse
Ta = 25℃
Curves must be derated
linearly with increase in
temperature.
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TPCF8003
2010-01-14
7
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR
APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
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