Datasheet Please read the Important Notice and Warnings at the end of this document V 2.1
www.infineon.com page 1 of 36 2018-02-27
ICE5ARxxxxBZS
Fixed Frequency 700 V/800 V CoolSET - in DIP-7
Package
Product highlights
Integrated 700 V/ 800 V avalanche rugged CoolMOS
Enhanced Active Burst Mode with selectable entry and exit standby
power to reach the lowest standby power <100 mW
Digital frequency reduction for better overall system efficiency
Fast startup achieved with cascode configuration
Frequency jitter and soft gate driving for low EMI
Integrated error amplifier
Comprehensive protection
Pb-free lead plating, halogen-free mold compound, RoHS compliant
PG-DIP-7
Features
Integrated 700 V/ 800 V avalanche rugged
CoolMOS™
Enhanced Active Burst Mode with selectable entry
and exit standby power
Digital frequency reduction for better overall
system efficiency
Fast startup achieved with cascode configuration
DCM and CCM operation with slope compensation
Frequency jitter and soft gate driving for low EMI
Built-in digital soft start
Integrated error amplifier to support direct
feedback in non-isolated flyback
Comprehensive protection with VCC over voltage,
VCC under voltage, overload/open loop, over
temperature and Current Sense (CS) short to GND
All protections are in auto restart mode
Limited charging current for VCC short to GND
Applications
Auxiliary power supply for home appliances/white
goods, TV, PC & server
Blu-ray player, set-top box & LCD/LED monitor
Product validation
Product qualified according to JEDEC Standard
Description
The ICE5ARxxxxBZS is the 5th generation of fixed
frequency integrated power IC (CoolSET™) optimized
for off-line switch mode power supply in cascode
configuration. The CoolSET™ package has 2 separate
chips inside; one is controller chip and the other is a
700 V/ 800 V CoolMOS™ chip. The cascode
configuration helps achieve fast startup. The
frequency reduction with soft gate driving and
frequency jitter operation offers lower EMI and better
efficiency between light load and 50% load. The
selectable entry and exit standby power ABM enables
flexibility and ultra-low power consumption at
standby mode with small and controllable output
voltage ripple. The product has a wide operating
range (10.0 ~ 25.5 V) of IC power supply and lower
power consumption. The numerous protection
functions support the power supply system in failure
situations. All these make the 5th generation
CoolSET™ series an outstanding integrated power
stage fixed frequency flyback converter in the market.
Datasheet Please read the Important Notice and Warnings at the end of this document V 2.1
www.infineon.com page 2 of 36 2018-02-27
ICE5ARxxxxBZS
85 ~ 300 VAC
Snubber
Cbus
Dr1~Dr4
RCS
CVCC DVCC
ICE5ARxxxxBZS CoolSETTM
CoolMOSTM
RVCC
DRAIN
Active Burst Mode
Power Management
Cycle-by-Cycle
current limitation
Error Amplifier
PWM controller
Current Mode Control
Digital Control
VCC
CS
Control Unit
VERR
GND Gate
Driver
Protections
RSTARTUP
GATE
TL431
Optocoupler
Rb1 Rb2
Rc1
Cc1 Cc2
Rovs2
Rovs1
DO1 CO1 Lf1 Cf1 VO1
CPS
DO2 CO2 Lf2 Cf2 VO2
Wp
Wa
Ws1
Ws2
# RSel
# Optional
RSel (Burst mode detect)
Rovs3
(V02 feedback)
# Rovs3
D
FB
C2
Figure 1 Typical application in isolated flyback using TL431 and optocoupler
85 ~ 300 VAC
Snubber
Cbus
Dr1~Dr4
RCS
CVCC DVCC
ICE5ARxxxxBZS CoolSETTM
CoolMOSTM
RVCC
DRAIN
Active Burst Mode
Power Management
Cycle-by-Cycle
current limitation
Error Amplifier
PWM controller
Current Mode Control
Digital Control
VCC
CS
Control Unit
VERR
GND Gate
Driver
Protections
RSTARTUP
GATE
RF1
RF2
DO1 CO1 Lf1 Cf1 VO1
CPS
DP1
CP1
LfP1
CfP1
VP1
Wp
Wa
Ws1
WP1
# RSel
# Optional
RSel (Burst mode detect)
D
FB
C1
R1
C2
Figure 2 Typical application in non-isolated flyback utilizing integrated error amplifier
Output power of 5th generation Fixed-Frequency CoolSET
Table 1 Output power of 5th generation Fixed-Frequency CoolSET™
Type
Package
VDS
Fsw
RDSon1
220 V AC ±20%2
at DCM
85-300 V AC2
at DCM
85-300 V AC2
at CCM
ICE5AR4770BZS
PG-DIP-7
700 V
100 kHz
4.73
26.5 W
14.5 W
16 W
ICE5AR4780BZS
PG-DIP-7
800 V
100 kHz
4.13
27.5 W
15 W
16 W
ICE5AR0680BZS
PG-DIP-7
800 V
100 kHz
0.71
66 W
39 W
41 W
1
Typ. at TJ =25 °C (inclusive of low side MOSFET)
2
Calculated maximum output power rating in an open frame design at Ta=50 °C, TJ=125 °C (integrated high voltage MOSFET) and using
minimum drain pin copper area in a 2 oz copper single sided PCB. The output power figure is for selection purpose only. The actual
power can vary depending on particular designs. Please contact to a technical expert from Infineon for more information.
Datasheet 3 of 36 V 2.1
2018-02-27
Fixed Frequency 700 V/800 V CoolSET™ - in DIP-7 Package
Pin configuration and functionality
Table of contents
Product highlights ................................................................................................................................................. 1
Features ................................................................................................................................................................. 1
Applications ........................................................................................................................................................... 1
Product validation ................................................................................................................................................. 1
Description ............................................................................................................................................................ 1
Output power of 5th generation Fixed-Frequency CoolSET™ ................................................................................. 2
Table of contents ................................................................................................................................................... 3
1 Pin configuration and functionality ............................................................................................................. 5
2 Representative block diagram ..................................................................................................................... 6
3 Functional description ................................................................................................................................. 7
3.1 VCC pre-charging and typical VCC voltage during start-up ....................................................................... 7
3.2 Soft-start .................................................................................................................................................. 8
3.3 Normal operation .................................................................................................................................... 8
3.3.1 PWM operation and peak current mode control .............................................................................. 8
3.3.1.1 Switch-on determination.............................................................................................................. 8
3.3.1.2 Switch-off determination ............................................................................................................. 8
3.3.2 Current sense ..................................................................................................................................... 9
3.3.3 Frequency reduction ........................................................................................................................ 10
3.3.4 Slope compensation ........................................................................................................................ 10
3.3.5 Oscillator and frequency jittering .................................................................................................... 11
3.3.6 Modulated gate drive ....................................................................................................................... 11
3.4 Peak current limitation ......................................................................................................................... 11
3.4.1 Propagation delay compensation ................................................................................................... 11
3.5 Active Burst Mode (ABM) with selectable power level ......................................................................... 13
3.5.1 Entering ABM operation ................................................................................................................... 13
3.5.2 During ABM operation ...................................................................................................................... 13
3.5.3 Leaving ABM operation .................................................................................................................... 13
3.5.4 ABM configuration ............................................................................................................................ 15
3.6 Non-isolated/isolated configuration .................................................................................................... 15
3.7 Protection functions ............................................................................................................................. 16
3.7.1 VCC over/under voltage ..................................................................................................................... 16
3.7.2 Overload/ open loop ........................................................................................................................ 16
3.7.3 Over temperature ............................................................................................................................. 16
3.7.4 CS short to GND ................................................................................................................................ 16
3.7.5 VCC short to GND................................................................................................................................ 17
3.7.6 Protection modes ............................................................................................................................. 17
4 Electrical characteristics ............................................................................................................................ 19
4.1 Absolute maximum ratings ................................................................................................................... 19
4.2 Operating range .................................................................................................................................... 20
4.3 Operating conditions ............................................................................................................................ 20
4.4 Internal voltage reference ..................................................................................................................... 21
4.5 PWM section .......................................................................................................................................... 21
4.6 Error amplifier ....................................................................................................................................... 21
4.7 Current sense ......................................................................................................................................... 22
4.8 Soft start ................................................................................................................................................ 22
4.9 Active Burst Mode .................................................................................................................................. 22
Datasheet 4 of 36 V 2.1
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Fixed Frequency 700 V/800 V CoolSET™ - in DIP-7 Package
Pin configuration and functionality
4.10 VCC over voltage protection ................................................................................................................... 23
4.11 Overload protection .............................................................................................................................. 23
4.12 Thermal protection ............................................................................................................................... 23
4.13 CS short to GND protection ................................................................................................................... 24
4.14 CoolMOS™ section ................................................................................................................................. 24
5 CoolMOS™ performance characteristics .................................................................................................... 25
6 Output power curve ................................................................................................................................... 31
7 Outline dimension ..................................................................................................................................... 33
8 Marking ...................................................................................................................................................... 34
Revision history ................................................................................................................................................... 35
Datasheet 5 of 36 V 2.1
2018-02-27
Fixed Frequency 700 V/800 V CoolSET™ - in DIP-7 Package
Pin configuration and functionality
1 Pin configuration and functionality
The pin configuration is shown in Figure 3 and the functions are described in Table 2.
Figure 3 Pin configuration
Table 2 Pin definitions and functions
Pin
Symbol
Function
1
VERR
Error amplifier
VERR pin is internally connected to the transconductance error amplifier for non-isolated
flyback application. Connect this pin to GND for isolated flyback application.
2
FB
Feedback and ABM entry/exit control
FB pin combines the functions of feedback control, selectable burst entry/exit control
and overload/open loop protection.
3
CS
Current sense
The CS pin is connected to the shunt resistor for the primary current sensing externally
and to the PWM signal generator block for switch-off determination (together with the
feedback voltage) internally. Moreover, CS short to ground protection is sensed via this
pin.
4
GATE
Gate driver output
The GATE pin is connected to the Gate of the internal CoolMOS™ and additionally, a pull
up resistor is connected from bus voltage to turn on the internal CoolMOS™ for charging
up the VCC capacitor during startup.
5
DRAIN
DRAIN(Drain of integrated CoolMOS)
The DRAIN pin is connected to the drain of the integrated CoolMOS.
7
VCC
VCC(Positive voltage supply)
The VCC pin is the positive voltage supply to the IC. The operating range is between
VVCC_OFF and VVCC_OVP.
8
GND
Ground
The GND pin is the common ground of the controller.
1
7
8
4
3
2
5
GNDVERR
FB
CS
VCC
GATE DRAIN
PG-DIP-7
Datasheet 6 of 36 V 2.1
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Fixed Frequency 700 V/800 V CoolSET™ - in DIP-7 Package
Representative block diagram
2 Representative block diagram
Gate Driver
Thermal Protection
Slope Compensation/Current Limiting
Active Burst Block
RFB
25kΩ
2pF
tFB_BEB
FB
C10
VFB_BOn
C11
VFB_BOff
fOSC
OSC
Active
Burst Mode
Soft-start
VREF
DRAIN
CS
VCC
Gate
Drive
Current Mode GPWM
PWM OP
PWM
Comparator
VPWM
Power Management
Voltage
Reference
Undervoltage Lockout
16.0V
10.0V
tVCC_OVP_B
Internal
Bias
CoolMOSTM
Overload Protection
C12
VFB_OLP/
VFB_LB
tFB_OLP_B
10kΩ
D2
Leading
Edge
Blanking
tCS_LEB 1pF
C13
C15
Protection and PWM Digital Control
GND
C20
VVCC_OVP
Tj > Tjcon_OTP
GATE
VCS_BLP
VCS_BHP
VFB_EBHP
VFB_EBLP
R
SQ
Autorestart
Protect
Tj < Tjcon_OTP-TjHYS _OTP
OTP
Mode
50 µs
Blanking
time
Gate
Drive
C19 VCS_STG
Delay
tCS_STG
VCS_Nx
CPWM
VERR
Error Amplifier
ERR
VERR_REF
Non-
Isolated
Detector
fOSC_2
OSC with
Jitter and
Frequency
Reduction
Slope
Comp
VREF
Burst Mode
Level Select
V1
D1
Burst
Mode
detect
C9
Peak current
limit
No burst C15a
Figure 4 Representative block diagram
Note: Junction temperature of the controller chip is sensed for over temperature protection. The
CoolMOSTM is a separate chip from the controller chip in the same package. Please refer to the
design guide and/or consult a technical expert for the proper thermal design.
Datasheet 7 of 36 V 2.1
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Fixed Frequency 700 V/800 V CoolSET™ - in DIP-7 Package
Functional description
3 Functional description
3.1 VCC pre-charging and typical VCC voltage during start-up
As shown in Figure 1, once the line input voltage is applied, a rectified voltage appears across the capacitor CBUS.
The pull up resistor RSTARTUP provides a current to charge the Ciss (input capacitance) of CoolMOS™ and gradually
generate one voltage level. If the voltage over Ciss is high enough, CoolMOS™ on and VCC capacitor will be
charged through primary inductance of transformer LP, CoolMOS™ and internal diode D1 with two steps
constant current source IVCC_ Charge1
1
and IVCC_ Charge31.
A very small constant current source (IVCC_Charge1) is charged to the VCC capacitor till VCC reach VCC_SCP to protect the
controller from VCC pin short to ground during the start up. After this, the second step constant current source
(IVCC_Charge3) is provided to charge the VCC capacitor further, until the VCC voltage exceeds the turned-on threshold
VVCC_ON. As shown in the time phase I in Figure 5, the VCC voltage increase almost linearly with two steps.
VVCC_ON
VVCC
VVCC_OFF
t
III III
tAtB
VVCC_SCP
IVCC_Charge2/3
IVCC
t1
t
t2
IVCC_Normal
IVCC_Charge1
-IVCC
0
Figure 5 VCC voltage and current at startup
The time taking for the VCC pre-charging can then be approximately calculated as:
 

󰇛

󰇜 

(1)
When the VCC voltage exceeds the VCC turn on threshold VVCC_ON at time t1, the IC begins to operate with soft-start.
Due to power consumption of the IC and the fact that there is still no energy from the auxiliary winding to
charge the VCC capacitor before the output voltage is built up, the VCC voltage drops (Phase II). Once the output
voltage rises close to regulation, the auxiliary winding starts to charge the VCC capacitor from the time t2 onward
and delivering the IVCC_ Normal
2
to the CoolSET™. The VCC then will reach a constant value depending on output
load.
1
IVCC_ Charge1/2/3 is charging current from the controller to VCC capacitor during start up
2
IVCC_ Normal is supply current from VCC capacitor or auxiliary winding to the CoolSET™ during normal operation
Datasheet 8 of 36 V 2.1
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Fixed Frequency 700 V/800 V CoolSET™ - in DIP-7 Package
Functional description
3.2 Soft-start
As shown in Figure 6, the IC begins to operate with a soft-start at time ton. The switching stresses on the power
MOSFET, diode and transformer are minimized during soft-start. The soft-start implemented in ICE5ARxxxxBZS
is a digital time-based function. The preset soft-start time is tSS (12 ms) with 4 steps. If not limited by other
functions, the peak voltage on CS pin will increase step by step from 0.3 V to VCS_N (0.8 V) finally. The normal
feedback loop will take over the control when the output voltage reaches its regulated value.
Figure 6 Maximum current sense voltage during soft start
3.3 Normal operation
The PWM controller during normal operation consists of a digital signal processing circuit including regulation
control and an analog circuit including a current measurement unit and a comparator. Details about the full
operation of the CoolSET™ in normal operation are illustrated in the following paragraphs.
3.3.1 PWM operation and peak current mode control
3.3.1.1 Switch-on determination
The power MOSFET turn-on is synchronized with the internal oscillator with a switching frequency fSW that
corresponds to the voltage level VFB (see Figure 8).
3.3.1.2 Switch-off determination
In peak current mode control, the PWM comparator monitors voltage V1 (see Figure 4) which is the
representation of the instantaneous current of the power MOSFET. When V1 exceeds VFB, the PWM comparator
sends a signal to switch off the GATE of the power MOSFET. Therefore, the peak current of the power MOSFET is
controlled by the feedback voltage VFB (see Figure 7).
At switch on transient of the power MOSFET, a voltage spike across RCS can cause V1 to increase and exceed VFB.
To avoid a false switch off, the IC has a blanking time tCS_LEB before detecting the voltage across RCS to mask the
voltage spike. Therefore, the minimum turn on time of the power MOSFET is tCS_LEB.
For some reason that the voltage level at V1 takes long time to exceed VFB, the IC has implemented a maximum
duty cycle control to force the power MOSFET to switch off when DMAX = 0.75 is reached.
Datasheet 9 of 36 V 2.1
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Fixed Frequency 700 V/800 V CoolSET™ - in DIP-7 Package
Functional description
Figure 7 Pulse width modulation
3.3.2 Current sense
The power MOSFET current generates a voltage VCS across the current sense resistor RCS connected between the
CS pin and the GND pin. VCS is amplified with gain GPWM, then, added with an offset VPWM to become V1 as
described below in below equation 3.
 
(2)
 

(3)
where, VCS : CS pin voltage
ID : power MOSFET current
RCS : resistance of the current sense resistor
V1 : voltage level compared to VFB as described in section 3.3.1.2
GPWM : PWM-OP gain
VPWM : offset for voltage ramp
Datasheet 10 of 36 V 2.1
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Fixed Frequency 700 V/800 V CoolSET™ - in DIP-7 Package
Functional description
3.3.3 Frequency reduction
Frequency reduction is implemented in ICE5ARxxxxBZS to achieve a better efficiency during the light load. At
light load, the reduced switching frequency FSW improves efficiency by reducing the switching loses.
When load decreases, VFB decreases as well. FSW is dependent on the VFB as shown in Figure 8. Therefore, FSW
decreases as the load decreases.
Typically, FSW at high load is 100 kHz kHz and starts to decrease at VFB = 1.7V. There is no further frequency
reduction once it reached the fOSC4_MIN even the load is further reduced.
VFB
fSW(VFB)
1.35 V
1.7 V VFB_OLP
2.73 V
fOSC4_MIN
43 kHz
fOSC4
100 kHz
VCS (VFB)
VCS_N
0.80 V
VFB_EBxP
0.93 / 1.03 V
VCS_BHP / VCS_BLP
0.27 V /0.22 V
fOSC4_ABM
83 kHz
BM
0.5 V
No B M
BM
No B M
Fsw
Vcs
Figure 8 Frequency reduction curve
3.3.4 Slope compensation
ICE5ARxxxxBZS can operate at Continuous Conduction Mode (CCM). At CCM operation, duty cycle greater than
50% may generate a sub-harmonic oscillation. To avoid the sub-harmonic oscillation, slope compensation is
added to VCS pin when the gate of the power MOSFET is turned on for more than 40% of the switching cycle
period. The relationship between VFB and the VCS for CCM operation is described in below equation 4:

 
  󰇛  󰇜
(4)
where, TON : gate turn on time of the power MOSFET
MCOMP : slope compensation rate
TPERIOD : switching cycle period
Slope compensation circuit is disabled and no slope compensation is added into the VCS pin during active burst
mode to save the power consumption.
Datasheet 11 of 36 V 2.1
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Fixed Frequency 700 V/800 V CoolSET™ - in DIP-7 Package
Functional description
3.3.5 Oscillator and frequency jittering
The oscillator generates a frequency of 100 kHz with frequency jittering of ±4% at a jittering period of TJITTER (4
ms). The frequency jittering helps to reduce conducted EMI.
A capacitor, a current source and current sink which determine the frequency are integrated. The charging and
discharging current of the implemented oscillator capacitor are internally trimmed in order to achieve a highly
accurate switching frequency.
Once the soft-start period is over and when the IC goes into normal operating mode, the frequency jittering is
enabled. There is also frequency jittering during frequency reduction.
3.3.6 Modulated gate drive
The drive-stage is optimized for EMI consideration. The switch on speed is slowed down before it reaches the
CoolMOS™ turn on threshold. That is a slope control of the rising edge at the output of driver (see Figure 9).
Thus the leading switch spike during turn on is minimized.
Figure 9 Gate rising waveform
3.4 Peak current limitation
There is a cycle by cycle peak current limitation realized by the current limit comparator to provide primary
over-current protection. The primary current generates a voltage VCS across the current sense resistor RCS
connected between the CS pin and the GND pin. If the voltage VCS exceeds an internal voltage limit VCS_N, the
comparator immediately turns off the gate drive.
The primary peak current IPEAK_PRI can be calculated as below:

 
(5)
To avoid mistriggering caused by MOSFET switch on transient voltage spikes, a leading edge blanking time
(tCS_LEB) is integrated in the current sensing path.
3.4.1 Propagation delay compensation
In case of overcurrent detection, there is always a propagation delay from sensing the VCS to switching the
power MOSFET off. An overshoot on the peak current Ipeak caused by the delay depends on the ratio of dI/dt of
the primary current (see Figure 10).
Datasheet 12 of 36 V 2.1
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Fixed Frequency 700 V/800 V CoolSET™ - in DIP-7 Package
Functional description
Figure 10 Current limiting
The overshoot of Signal2 is larger than Signal1 due to the steeper rising waveform. This change in the slope is
depending on the AC input voltage. Propagation delay compensation is integrated to reduce the overshoot due
to dI/dt of the rising primary current. Thus the propagation delay time between exceeding the current sense
threshold VCS_N and the switching off of the power MOSFET is compensated over wide bus voltage range.
Current limiting becomes more accurate which will result in a minimum difference of overload protection
triggering power between low and high AC line input voltage.
Under CCM operation, the same VCS do not result in the same power. In order to achieve a close overload
triggering level for CCM, ICE5ARxxxxBZS has implemented a 2 compensation curve as shown Figure 11. One of
the curve is used for TON greater than 0.40 duty cycle and the other is for lower than 0.40 duty cycle.
Figure 11 Dynamic voltage threshold VCS_N
Similarly, the same concept of propagation delay compensation is also implemented in ABM with reduced
level. With this implementation, the entry and exit burst mode power can be close between low and high AC
line input voltage.
Datasheet 13 of 36 V 2.1
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Fixed Frequency 700 V/800 V CoolSET™ - in DIP-7 Package
Functional description
3.5 Active Burst Mode (ABM) with selectable power level
At light load condition, the IC enters ABM operation to minimize the power consumption. Details about ABM
operation are explained in the following paragraphs.
3.5.1 Entering ABM operation
The sytem will enter into ABM operation when two conditions below are met:
the FB voltage is lower than the threshold of VFB_EBLP/VFB_EBHP depending on burst configuration option setup
and a certain blanking time tFB_BEB
Once all of these conditions are fulfilled, the ABM flip-flop is set and the controller enters ABM operation. This
multi-condition determination for entering ABM operation prevents mis-triggering of entering ABM operation,
so that the controller enters ABM operation only when the output power is really low.
3.5.2 During ABM operation
After entering ABM, the PWM section will be inactive making the VOUT start todecrease. As the VOUT decreases, VFB
rises. Once VFB exceeded VFB_BOn, the internal circuit is again activated by the internal bias to start with the
switching.
If the PWM is still operating and the output load is still low, VOUT increases and VFB signal starts to decrease.
When VFB reaches the low threshold VFB_BOff, the internal bias is reset again and the PWM section is disabled with
no switching until VFB increases back to exceed VFB_BOn threshold.
In ABM, VFB is like a sawtooth waveform swinging between VFB_BOff and VFB_BOn shown in Figure 12.
During ABM, the switching frequency fOSC4_ABM is 83 kHz. The peak current IPEAK_ABMof the power MOSFET is defined
by:

 
(6)
where VCS_BxP is the peak current limitation in ABM
3.5.3 Leaving ABM operation
The FB voltage immediately increases if there is a sudden increase in the output load. When VFB exceeds VFB_LB, it
will leave ABM and the peak current limitation trhreshold voltage will return back to VCS_N immediately.
Datasheet 14 of 36 V 2.1
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Fixed Frequency 700 V/800 V CoolSET™ - in DIP-7 Package
Functional description
Figure 12 Signals in Active Burst Mode
VFB_EBHP/VFB_EBLP
VFB_BOn
VFB_LB
VFB
t
VCS_BHP/VCS_BLP
VCS_N
VCS
VVCC_off
VVC C
t
t
VO
t
VFB_BOff
Current limit level during Active Burst Mode
Blanking Window (tFB_BEB)
Leaving Active Burst Mode
Entering Active Burst Mode
Burst Mode Operation
Max. Ripple < 1%
Datasheet 15 of 36 V 2.1
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Fixed Frequency 700 V/800 V CoolSET™ - in DIP-7 Package
Functional description
3.5.4 ABM configuration
The burst mode entry level can be selected by changing the different resistance RSel at FB pin. There are 3
configuration options depending on RSel which corresponds to the options of no ABM (Option 1), low range of
ABM power (Option 2) and high range of ABM power (Option 3). The table below shows the control logic for the
entry and exit level with the FB voltage.
Table 3 ABM configuration option setup
Option
RSel
VFB
VCS_BxP
Entry level
Exit level
VFB_EBxP
VFB_LB
1
<470 k
VFB < VFB_P_BIAS1
-
No ABM
No ABM
2
720 k ~ 790 k
VFB_P_BIAS1<VFB<VFB_P_BIAS2
0.22V
0.93 V
2.73 V
3(Default)
>1210 k
VFB > VFB_P_BIAS2
0.27V
1.03 V
2.73 V
During IC first startup, the controller preset the ABM selection to Option 3, the FB resistor (RFB) is turned off by
internal switch S2 (see Figure 13)and a current source Isel is turned on instead.From VCC= 4.44 V to VCC on
threshold, the FB pin will start to charge resistor RSel with current ISel to a certain voltage level. When VCC reaches
VCC on threshold, the FB voltage is sensed. The burst mode option is then chosen according to the FB voltage
level. After finishing the selection, any change on the FB level will not change the burst mode option and the
current source (Isel) is turned off while the FB resistor (RFB) is connected back to the circuit (Figure 13).
Figure 13 ABM detect and adjust
3.6 Non-isolated/isolated configuration
ICE5ARxxxxBZS has a VERR Pin, which is connected to the input of an integrated error amplifier to support non-
isolated flyback application (see Figure 2). When VCC is charging and before reaching the VCC on threshold, a
current source IERR_P_BIAS from VERR pin together with RF1 and RF2 will generate a voltage across it. If VERR voltage
is more than VERR_P_BIAS (0.2 V), non-isolated configuration is selected, otherwise, isolated configuration is
selected. In isolated configuration, the error amplifier output is disconnected from the FB pin.
In case of non-isolated configuration, the voltage divider RF1 and RF2 is used to sense the output voltage and
compared with the internal reference voltage VERR_REF. The difference between the sensed voltage and the
reference voltage is converted as an output current by the error amplifier. The output current will
charge/discharge the resistor and capacitor network connected at the FB pin for the loop compensation.
Datasheet 16 of 36 V 2.1
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Functional description
3.7 Protection functions
The ICE5ARxxxxBZS provides numerous protection functions which considerably improve the power supply
system robustness, safety and reliability. The following table summarizes these protection functions and the
corresponding protection mode whether as a non switch auto restart, auto restart or odd skip auto restart
mode. Refer to Figure 14, Figure 15 and Figure 16 for the waveform illustration of protection modes.
Table 4 Protection functions
Protection Functions
Normal Mode
Burst Mode
Protection Mode
Burst ON
Burst OFF
VCC over voltage
NA1
Odd skip auto restart
VCC under voltage
Auto restart
Overload/ open loop
NA1
NA1
Odd skip auto restart
Over temperature
Non switch auto restart
CS short to GND
NA1
Odd skip auto restart
VCC short to GND
No startup
3.7.1 VCC over/under voltage
During operation, the VCC voltage is continuously monitored. If VCC is either below VVCC_OFF for 50 µs (tVCC_OFF_B) or
above VVCC_OVP for 55 µs (tVCC_OVP_B), the power MOSFET is kept switch off. After the VCC voltage falls below the
threshold VVCCoff, the new start up sequence is activated. The VCC capacitor is then charged up. Once the voltage
exceeds the threshold VVCC_ON, the IC begins to operate with a new soft-start.
3.7.2 Overload/ open loop
In case of open control loop or output overload, the FB voltage will be pulled up. When VFB exceeds VFB_OLP after
a blanking time of tFB_OLP_B, the IC enters odd skip auto restart mode. The blanking time enables the converter to
provide a peak power in case the increase in VFB is due to a sudden load increase.
3.7.3 Over temperature
If the junction temperature of controller exceeds Tjcon_OTP, the IC enters into Over Temperature Protection (OTP)
auto restart mode. The IC has also implemented with a 40 °C hysteresis. That means the IC can only be recovered
from OTP when the controller junction temperature is dropped 40 °C lower than the over temperature trigger
point.
3.7.4 CS short to GND
If the voltage at the current sense pin is lower than the preset threshold VCS_STG with certain blanking time
tCS_STG_B for three consecutive pulses during on-time of the power switch, the IC enters CS short to GND
protection.
1
Not Applicable
Datasheet 17 of 36 V 2.1
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Fixed Frequency 700 V/800 V CoolSET™ - in DIP-7 Package
Functional description
3.7.5 VCC short to GND
To limit the power dissipation of the startup circuit at VCC short to GND condition, the VCC charging current is
limited to a minimum level of IVCC_ Charge1. With such low current, the power loss of the IC is limited to prevent
overheating.
3.7.6 Protection modes
All the protections are in auto restart mode with a new soft start sequence. The three auto restart modes are
illustrated in the following figures.
VCC_OFF
t
VCS
t
VVCC
No switching
Fault
detected
Fault released
t
Switching start at the
following restart cycle
VCC_ON
Start up and detect at
every charging cycle
Figure 14 Non switch auto restart mode
Datasheet 18 of 36 V 2.1
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Fixed Frequency 700 V/800 V CoolSET™ - in DIP-7 Package
Functional description
VCC_OFF
t
VCS
t
VVCC
Fault
detected
Fault released
t
Switching start at the
following restart cycle
VCC_ON
Start up and detect at every
charging cycle
Figure 15 Auto restart mode
VCC_OFF
t
VCS
t
VVCC
Fault
detected
Fault released
t
Switching start at the
following even restart
cycle
VCC_ON
Start up and detect at
every even charging
cycle
No detect No detect
Figure 16 Odd skip auto restart
Datasheet 19 of 36 V 2.1
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Fixed Frequency 700 V/800 V CoolSET™ - in DIP-7 Package
Electrical characteristics
4 Electrical characteristics
Attention: All voltages are measured with respect to ground (Pin 8). The voltage levels are valid if other
ratings are not violated.
4.1 Absolute maximum ratings
Attention: Stresses above the maximum values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding any one of these values may cause
irreversible damage to the integrated circuit. For the same reason, make sure that any capacitor
that will be connected to pin 7 (VCC) is discharged before assembling the application circuit. Ta=25
°C unless otherwise specified.
Table 5 Absolute maximum ratings
Parameter
Symbol
Limit Values
Unit
Note / Test Condition
Min.
Max.
Drain Voltage
ICE5ARxx70BZS
ICE5ARxx80BZS
VDRAIN
-
-
700
800
V
Tj = 25 °C
Pulse drain current
ICE5AR4770BZS
ICE5AR4780BZS
ICE5AR0680BZS
ID,Pulse
-
-
-
2.21
2.61
5.82
A
Avalanche energy, repetitive, tAR limited
by max. TJ=150 °C and TJ,Start = 25 °C
ICE5AR4770BZS
ICE5AR4780BZS
ICE5AR0680BZS
EAR
-
-
-
0.02
0.02
0.22
mJ
ID=0.14 A, VDD=50 V
ID=0.20 A, VDD=50 V
ID=1.80 A, VDD=50 V
Avalanche current, repetitive,tAR limited
by max. TJ=150 °C and TJ,Start = 25 °C
ICE5AR4770BZS
ICE5AR4780BZS
ICE5AR0680BZS
IAR
-
-
-
0.14
0.20
1.80
A
VCC Supply Voltage
VCC
-0.3
27.0
V
GATE Voltage
VGATE
-0.3
27.0
V
FB Voltage
VFB
-0.3
3.6
V
VERR Voltage
VERR
-0.3
3.6
V
CS Voltage
VCS
-0.3
3.6
V
Maximum DC current on any pin
-10.0
10.0
mA
Except DRAIN and CS pin
1
Pulse width tP limited by Tj,max
2
Pulse width tP = 20 µs and limited by Tj,max
Datasheet 20 of 36 V 2.1
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Electrical characteristics
ESD robustness HBM
VESD_HBM
-
2000
V
According to EIA/JESD22
ESD robustness CDM
VESD_CDM
-
500
V
Junction temperature range
TJ
-40
150
°C
Controller & CoolMOS
Storage Temperature
TSTORE
-55
150
°C
Thermal Resistance (Junction- Ambient)
ICE5AR4770BZS
ICE5AR4780BZS
ICE5AR0680BZS
RthJA
-
-
-
106
107
100
K/W
Setup according to the JEDEC
standard JESD51 and using
minimum drain pin copper
area in a 2 oz copper single
sided PCB
4.2 Operating range
Note: Within the operating range, the IC operates as described in the functional description.
Table 6 Operating range
Parameter
Symbol
Limit Values
Unit
Remark
Min.
Max.
VCC Supply Voltage
VVCC
VVCC_OFF
VVCC_OVP
Junction Temperature of
controller
TjCon_op
-40
TjCon_OTP
˚C
Max value limited due to OTP
of controller chip
Junction Temperature of CoolMOS
TjCoolMOS_op
-40
150
˚C
4.3 Operating conditions
Note: The electrical characteristics involve the spread of values within the specified supply voltage and
junction temperature range TJ from 40 °C to 125 °C. Typical values represent the median values,
which are related to 25 °C. If not otherwise stated, a supply voltage of VCC = 18 V is assumed.
Table 7 Operating conditions
Parameter
Symbol
Limit Values
Unit
Note / Test Condition
Min.
Typ.
Max.
VCC Charge Current
IVCC_Charge1
-0.35
-0.20
-0.09
mA
VVCC=0 V, RStartUp=50 MΩ and
VDRAIN=90 V
IVCC_Charge2
-
-3.2
-
mA
VVCC=3 V, RStartUp=50 MΩ and
VDRAIN=90 V
IVCC_Charge3
-5
-3
-1
mA
VVCC=15 V, RStartUp=50 MΩ
and VDRAIN=90 V
Current Consumption, Startup Current
IVCC_Startup
-
0.25
-
mA
VVCC=15 V
Current Consumption, Normal
IVCC_Normal
-
0.9
-
mA
IFB=0 A (No gate switching)
Current Consumption, Auto Restart
IVCC_AR
-
410
-
µA
Current Consumption, Burst Mode
Isolated
IVCC_Burst
Mode_ISO
-
0.54
-
mA
Current Consumption, Burst Mode
Non-Isolated
IVCC_Burst
Mode_NISO
-
0.61
-
mA
Datasheet 21 of 36 V 2.1
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Electrical characteristics
VCC Turn-on Threshold Voltage
VVCC_ON
15.3
16.0
16.5
V
VCC Turn-off Threshold Voltage
VVCC_OFF
9.4
10.0
10.4
V
VCC Short Circuit Protection
VVCC_SCP
-
1.1
1.9
V
VCC Turn-off blanking
tVCC_OFF_B
-
50
-
µs
4.4 Internal voltage reference
Table 8 Internal voltage reference
Parameter
Symbol
Limit Values
Unit
Note / Test Condition
Min.
Typ.
Max.
Internal Reference Voltage
VREF
3.20
3.30
3.39
V
Measured at pin FB IFB=0 A
4.5 PWM section
Table 9 PWM section
Parameter
Symbol
Limit Values
Unit
Note / Test
Condition
Min.
Typ.
Max.
Fixed Oscillator Frequency
100 kHz
fOSC3
92
100
108
k H z
fOSC4
94
100
106
k H z
Tj = 25 °C
Fixed Oscillator Frequency
100 kHz (Active Burst Mode)
fOSC4_ABM
71
83
94
k H z
Tj = 25 °C
Fixed Oscillator Frequency
100 kHz (Minimum Fsw)
fOSC4_MIN
36
43
51
k H z
Tj = 25 °C
Frequency Jittering Range
FJITTER
-
+/- 4
-
%
Tj = 25 °C
Frequency Jittering period
TJITTER
-
4
-
ms
Tj = 25 °C
Maximum Duty Cycle
DMAX
70
75
80
%
Feedback Pull-Up Resistor
RFB
11
15
20
kΩ
PWM-OP Gain
GPWM
1.91
2.03
2.16
Offset for Voltage Ramp
VPWM
0.42
0.50
0.58
V
Slope Compensation rate -
100 kHz
MCOMP
41
50
58
m V / μ s
Vcs=0 V
4.6 Error amplifier
Table 10 Error amplifier
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
Transconductance
GERR_M
2.14
2.80
3.44
m A / V
Transconductance Burst Mode
GERR_BM
6.9
9.2
11.6
m A / V
Error Amplifier Source Current
IERR_SOURCE
85
150
223
μA
Error Amplifier Sink Current
IERR_SINK
85
150
223
μA
Error Amplifier Reference Voltage
VERR_REF
1.76
1.80
1.84
V
Datasheet 22 of 36 V 2.1
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Fixed Frequency 700 V/800 V CoolSET™ - in DIP-7 Package
Electrical characteristics
Error Amplifier Output Dynamic
Range of Transconductance
VERR_DYN
0.05
-
3.15
V
Error Amplifier Mode Bias Current
IERR_P_BIAS
9.5
14.0
18.5
μA
Error Amplifier Mode Threshold
VERR_P_BIAS
0.16
0.20
0.24
V
4.7 Current sense
Table 11 Current sense
Parameter
Symbol
Limit Values
Unit
Note / Test Condition
Min.
Typ.
Max.
Peak current limitation in normal
operation
VCS_N
0.72
0.80
0.88
V
dvsense/dt = 0.41V/ μs
Peak current limitation in normal
operation, 15% of TON
VCS_N15
0.74
0.79
0.84
V
Leading Edge Blanking time
tCS_LEB
70
220
365
ns
Peak Current Limitation in Active
Burst Mode - High Power
VCS_BHP
0.23
0.27
0.31
V
Peak Current Limitation in Active
Burst Mode - Low Power
VCS_BLP
0.18
0.22
0.26
V
4.8 Soft start
Table 12 Soft start
Parameter
Symbol
Limit Values
Unit
Note / Test Condition
Min.
Typ.
Max.
Soft-Start time
tSS
7.3
12.0
-
ms
Soft-start time step
tSS_S1
-
3
-
ms
CS peak voltage at first step of soft
start
VSS11
-
0.30
-
V
CS peak voltage
Step increment of CS peak voltage
in soft start
VSS_S1
-
0.15
-
V
CS peak voltage
4.9 Active Burst Mode
Table 13 Active Burst Mode
Parameter
Symbol
Limit Values
Unit
Note / Test Condition
Min.
Typ.
Max.
Charging current to select burst
mode
Isel
2.5
3.0
3.5
µA
Burst mode selection reference
voltage Threshold
VFB_P_BIAS1
1.65
1.73
1.80
V
1
The parameter is not subjected to production test - verified by design/characterization
Datasheet 23 of 36 V 2.1
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Fixed Frequency 700 V/800 V CoolSET™ - in DIP-7 Package
Electrical characteristics
Burst mode selection reference
voltage Threshold
VFB_P_BIAS2
2.76
2.89
3.01
V
Feedback voltage for entering
ABM for high power
VFB_EBHP
0.98
1.03
1.08
V
Feedback voltage for entering
ABM for low power
VFB_EBLP
0.88
0.93
0.98
V
Blanking time for entering
Active Burst Mode
tFB_BEB
-
36
-
ms
Feedback voltage for leaving
Active Burst Mode
VFB_LB
2.63
2.73
2.83
V
Feedback voltage for burst-on
Isolated Case
VFB_Bon_ISO
2.26
2.35
2.45
V
Feedback voltage for burst-off
Isolated Case
VFB_BOff_ISO
1.88
2.00
2.05
V
Feedback voltage for burst-on
Non-Isolated Case
VFB_Bon_NISO
1.88
1.95
2.05
V
Feedback voltage for burst-off
Non-Isolated Case
VFB_BOff_NISO
1.50
1.55
1.64
V
4.10 VCC over voltage protection
Table 14 VCC over voltage protection
Parameter
Symbol
Limit Values
Unit
Note / Test Condition
Min.
Typ.
Max.
VCC Over Voltage threshold
VVCC_OVP
24.0
25.5
27.0
V
VCC Over Voltage blanking
tVCC_OVP_B
-
55
-
µs
4.11 Overload protection
Table 15 Overload protection
Parameter
Symbol
Limit Values
Unit
Note / Test Condition
Min.
Typ.
Max.
Over Load Detection threshold for
OLP protection at FB pin
VFB_OLP
2.63
2.73
2.83
V
Over Load Protection Blanking Time
tFB_OLP_B
30
54
-
ms
4.12 Thermal protection
Table 16 Thermal protection
Parameter
Symbol
Limit Values
Unit
Note / Test Condition
Min.
Typ.
Max.
Over temperature protection
Tjcon_OTP1
129
140
150
°C
Junction temperature of
the controller chip (not the
CoolMOS™ chip)
Over temperature Hysteresis
TjHYS_OTP
-
40
-
°C
Over temperature Blanking Time
Tjcon_OTP_B
-
50
-
µs
1
The parameter is not subjected to production test - verified by design/characterization
Datasheet 24 of 36 V 2.1
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Fixed Frequency 700 V/800 V CoolSET™ - in DIP-7 Package
Electrical characteristics
4.13 CS short to GND protection
Table 17 CS short to GND protection
Parameter
Symbol
Limit Values
Unit
Note / Test Condition
Min.
Typ.
Max.
CS Short to Gnd Protection
VCS_STG
0.06
0.10
0.15
V
CS Short to Gnd Consecutive
Trigger
PCS_STG
-
3
-
cycle
CS Short to Gnd Sample period
tCS_STG_SAM
tPERIOD *
0.36
tPERIOD *
0.4
tPERIOD *
0.44
µs
4.14 CoolMOS™ section
Table 18 ICE5ARxxxxBZS
Parameter
Symbol
Limit Values
Unit
Note / Test Condition
Min.
Typ.
Max.
Drain Source Breakdown Voltage
ICE5ARxx70BZS
ICE5ARxx80BZS
V(BR)DSS
700
800
-
-
-
-
V
Tj = 25°C
Drain Source On-Resistance (inclusive of low
side MOSFET)
ICE5AR4770BZS
ICE5AR4780BZS
ICE5AR0680BZS
RDSon
-
-
-
-
-
-
4.73
8.731
4.13
8.691
0.71
1.271
5.18
-
4.85
-
0.80
-
Tj = 25°C
Tj=125°C at ID =0.4A
Tj = 25°C
Tj=125°C at ID =0.4A
Tj = 25°C
Tj=125°C at ID =2A
Effective output capacitance, energy related1
ICE5AR4770BZS
ICE5AR4780BZS
ICE5AR0680BZS
Co(er)
-
-
-
3.4
3
24
-
-
-
pF
VGS=0V, VDS=0~480V
VGS=0V, VDS=0~500V
VGS=0V, VDS=0~500V
Rise Time
trise2
-
30
-
ns
Fall Time
tfall2
-
30
-
ns
1
The parameter is not subjected to production test - verified by design/characterization
2
Measured in a typical flyback converter application
Datasheet 25 of 36 V 2.1
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Fixed Frequency 700 V/800 V CoolSET™ - in DIP-7 Package
CoolMOS™ performance characteristics
5 CoolMOS™ performance characteristics
Figure 17 Safe Operating Area (SOA) curve for ICE5AR4770BZS
Figure 18 Safe Operating Area (SOA) curve for ICE5AR4780BZS
Datasheet 26 of 36 V 2.1
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Fixed Frequency 700 V/800 V CoolSET™ - in DIP-7 Package
CoolMOS™ performance characteristics
Figure 19 Safe Operating Area (SOA) curve for ICE5AR0680BZS
Figure 20 Power dissipation of ICE5AR4770BZS; Ptot=f(Ta), (Maximum ratings as given in section 4.1 must
not be exceeded)
Datasheet 27 of 36 V 2.1
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Fixed Frequency 700 V/800 V CoolSET™ - in DIP-7 Package
CoolMOS™ performance characteristics
Figure 21 Power dissipation of ICE5AR4780BZS; Ptot=f(Ta), (Maximum ratings as given in section 4.1 must
not be exceeded)
Figure 22 Power dissipation of ICE5AR0680BZS; Ptot=f(Ta), (Maximum ratings as given in section 4.1 must
not be exceeded)
Datasheet 28 of 36 V 2.1
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Fixed Frequency 700 V/800 V CoolSET™ - in DIP-7 Package
CoolMOS™ performance characteristics
Figure 23 Drain-source breakdown voltage ICE5ARxx70BZS; VBR(DSS)=f(TJ), ID=1 mA
Figure 24 Drain-source breakdown voltage ICE5ARxx80BZS; VBR(DSS)=f(TJ), ID=1 mA
Datasheet 29 of 36 V 2.1
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Fixed Frequency 700 V/800 V CoolSET™ - in DIP-7 Package
CoolMOS™ performance characteristics
Figure 25 Typical CoolMOS™ capacitances of ICE5AR4770BZS (C=f(VDS);VGS=0 V; f=1 MHz)
Figure 26 Typical CoolMOS™ capacitances of ICE5AR4780BZS (C=f(VDS);VGS=0 V; f=250 kHz)
Datasheet 30 of 36 V 2.1
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Fixed Frequency 700 V/800 V CoolSET™ - in DIP-7 Package
CoolMOS™ performance characteristics
Figure 27 Typical CoolMOS™ capacitances of ICE5AR0680BZS (C=f(VDS);VGS=0 V; f=250 kHz)
Datasheet 31 of 36 V 2.1
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Fixed Frequency 700 V/800 V CoolSET™ - in DIP-7 Package
Output power curve
6 Output power curve
The calculated output power curves versus ambient temperature are shown below. The curves are derived
based on a typical DCM/CCM flyback in an open frame design setting the maximum TJ of the integrated
CoolMOS™ at 125 °C, using minimum drain pin copper area in a 2 oz copper single sided PCB and steady state
operation only (no design margins for abnormal operation modes are included).
The output power figure is for selection purpose only. The actual power can vary depending on a particular
design. In a power supply system, appropriate thermal design margins must be considered to make sure that
the operation of the device is within the maximum ratings given in section 4.1.
Figure 28 Output power curve of ICE5AR4770BZS
Datasheet 32 of 36 V 2.1
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Fixed Frequency 700 V/800 V CoolSET™ - in DIP-7 Package
Output power curve
Figure 29 Output power curve of ICE5AR4780BZS
Figure 30 Output power curve of ICE5AR0680BZS
Datasheet 33 of 36 V 2.1
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Fixed Frequency 700 V/800 V CoolSET™ - in DIP-7 Package
Outline dimension
7 Outline dimension
Figure 31 PG-DIP-7
Datasheet 34 of 36 V 2.1
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Fixed Frequency 700 V/800 V CoolSET™ - in DIP-7 Package
Marking
8 Marking
Figure 32 Marking of PG-DIP-7
Datasheet 35 of 36 V 2.1
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Fixed Frequency 700 V/800 V CoolSET™ - in DIP-7 Package
Revision history
Revision history
Document
version
Date of release
Description of changes
V 2.0
21 Nov 2017
First release
V 2.1
27 Feb 2018
Page 1
Product validation text content revised
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2018-02-27
ICE5ARxxxxBZS
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2018 Infineon Technologies AG.
All Rights Reserved.
Do you have a question about this
document?
Email: erratum@infineon.com
Document reference
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product only and shall in no event be regarded as a
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respect to such application.
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