STP9NK65Z STP9NK65ZFP N-channel 650 V, 1 , 6.4 A, TO-220, TO-220FP Zener-protected SuperMESHTM Power MOSFET Features VDSS RDS(on) max. ID Pw STP9NK65Z 650 V < 1.2 6.4 A 125 W STP9NK65ZFP 650 V < 1.2 6.4 A 30 W Order codes 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche capabilities 3 1 TO-220 3 2 1 2 TO-220FP Applications Switching applications Figure 1. Description Internal schematic diagram These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESHTM technology, achieved through optimization of ST's well established strip-based PowerMESHTM layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Table 1. Device summary Order codes Marking Package Packaging STP9NK65Z P9NK65Z TO-220 Tube STP9NK65ZFP P9NK65ZFP TO-220FP Tube January 2012 Doc ID 8981 Rev 4 1/16 www.st.com 16 Contents STP9NK65Z, STP9NK65ZFP Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuits 3.1 .............................................. 6 Electrical characteristics (curves) ............................ 7 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 Doc ID 8981 Rev 4 STP9NK65Z, STP9NK65ZFP 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220 TO-220FP VDS Drain-source voltage (VGS = 0) 650 VGS Gate- source voltage 30 ID ID Drain current (continuous) at TC = 25 C Drain current (continuous) at TC = 100 C 6.4 V V 6.4 (1) A 4 4(1) A IDM (2) Drain current (pulsed) 25.6 25.6 (1) A PTOT Total dissipation at TC = 25 C 125 30 W 1 0.24 W/C Derating factor VESD(G-S) Gate source ESD(HBM-C=100 pF, R=1.5 k) dv/dt (3) Peak diode recovery voltage slope VISO Insulation withstand voltage (DC) Tj Tstg Operating junction temperature Storage temperature 4000 V 4.5 V/ns - 2500 -55 to 150 -55 to 150 V C C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD 6.4 A, di/dt 200 A/s, VDD 80%V(BR)DSS Table 3. Thermal data Value Symbol Parameter Unit TO-220 TO-220FP 1 4.2 Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max 62.5 C/W Maximum lead temperature for soldering purpose 300 C Value Unit Tl Table 4. Symbol C/W Avalanche characteristics Parameter IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 6.4 A EAS Single pulse avalanche energy (starting Tj=25 C, ID=IAR, VDD=50 V) 200 mJ Doc ID 8981 Rev 4 3/16 Electrical characteristics 2 STP9NK65Z, STP9NK65ZFP Electrical characteristics (TCASE=25C unless otherwise specified) Table 5. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage (VGS = 0) Test conditions ID = 1 mA Min. Typ. Max. 650 Unit V IDSS VDS = 650 V Zero gate voltage drain current (VGS = 0) VDS = 650 V, @125 C 1 50 A A IGSS Gate-body leakage current (VDS = 0) 10 A 3.75 4.5 V 1 1.2 Min. Typ. Max. Unit - 6 - S VDS = 25 V, f = 1 MHz, VGS = 0 - 1145 130 28 - VGS = 0, VDS = 0 to 400 V - 55 - pF VDD = 520 V, ID = 6.4 A, VGS = 10 V (see Figure 3) - 41 7.5 22 - nC nC nC VGS = 20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 100 A RDS(on) Static drain-source on VGS = 10 V, ID = 3.2 A resistance Table 6. Symbol gfs (1) Ciss Coss Crss Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Coss eq(2). Equivalent output capacitance Qg Qgs Qgd 3 Total gate charge Gate-source charge Gate-drain charge Test conditions VDS = 15 V, ID = 3.2 A pF pF pF 1. Pulsed: pulse duration=300s, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 7. Switching times Symbol Parameter td(on) tr td(off) tf 4/16 Test conditions Min. Typ. Max. Unit Turn-on delay time Rise time VDD = 325 V, ID = 3.2 A RG = 4.7 VGS = 10 V (see Figure 2) - 20 12 - ns ns Turn-off delay time Fall time VDD = 325 V, ID = 3.2 A RG = 4.7 VGS = 10 V (See Figure 2) - 45 15 - ns ns Doc ID 8981 Rev 4 STP9NK65Z, STP9NK65ZFP Table 8. Symbol Electrical characteristics Source drain diode Parameter Test conditions Min. Typ. Max. Unit - 6.4 25.6 A A 1.6 V ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD = 6.4 A, VGS = 0 - Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 6.4 A, di/dt = 100 A/s VDD = 50 V, Tj = 150 C (see Figure 4) - 400 2600 13 Min. Typ. Max. Unit 30 - - V trr Qrr IRRM ns nC A 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5% Table 9. Symbol Gate-source zener diode Parameter Test conditions BVGSO(1) Gate-source breakdown voltage Igs=1 mA (open drain) 1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components. Doc ID 8981 Rev 4 5/16 Test circuits STP9NK65Z, STP9NK65ZFP 3 Test circuits Figure 2. Switching times test circuit for resistive load Figure 4. Test circuit for inductive load Figure 5. switching and diode recovery times Unclamped Inductive load test circuit Figure 6. Unclamped inductive waveform Switching time waveform 6/16 Figure 3. Figure 7. Doc ID 8981 Rev 4 Gate charge test circuit STP9NK65Z, STP9NK65ZFP Test circuits 3.1 Electrical characteristics (curves) Figure 8. Safe operating area for TO-220 Figure 9. Thermal impedance for TO-220 Figure 10. Safe operating area for TO-220FP Figure 11. Thermal impedance for TO-220FP Figure 12. Output characteristics Figure 13. Transfer characteristics Doc ID 8981 Rev 4 7/16 Test circuits STP9NK65Z, STP9NK65ZFP Figure 14. Transconductance Figure 15. Static drain-source on resistance Figure 16. Gate charge vs gate-source voltage Figure 17. Capacitance variations Figure 18. Normalized gate threshold voltage vs temperature 8/16 Figure 19. Normalized on resistance vs temperature Doc ID 8981 Rev 4 STP9NK65Z, STP9NK65ZFP Test circuits Figure 20. Source-drain diode forward characteristics Figure 21. Normalized BVDSS vs temperature Figure 22. Maximum avalanche energy vs temperature Doc ID 8981 Rev 4 9/16 Package mechanical data 4 STP9NK65Z, STP9NK65ZFP Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. 10/16 Doc ID 8981 Rev 4 STP9NK65Z, STP9NK65ZFP Table 10. Package mechanical data TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 P 3.75 3.85 Q 2.65 2.95 Doc ID 8981 Rev 4 11/16 Package mechanical data STP9NK65Z, STP9NK65ZFP Figure 23. TO-220 type A drawing 0015988_typeA_Rev_S 12/16 Doc ID 8981 Rev 4 STP9NK65Z, STP9NK65ZFP Table 11. Package mechanical data TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Doc ID 8981 Rev 4 13/16 Package mechanical data STP9NK65Z, STP9NK65ZFP Figure 24. TO-220FP drawing L7 E A B D Dia L5 L6 F1 F2 F G H G1 L4 L2 L3 7012510_Rev_K 14/16 Doc ID 8981 Rev 4 STP9NK65Z, STP9NK65ZFP 5 Revision history Revision history Table 12. Document revision history Date Revision 11-Sep-2006 2 Complete version 19-Dec-2007 3 The document has been reformatted 4 - Minor text changes - Modified: Features in cover page - Updated: Section 4: Package mechanical data 26-Jan-2012 Changes Doc ID 8981 Rev 4 15/16 STP9NK65Z, STP9NK65ZFP Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2012 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 16/16 Doc ID 8981 Rev 4