V RM I T(AV)M I T(RMS) I TSM V T0 rT = 5200 V = 1980 A = 3100 A = 42x103 A = 1.06 V = 0.219 m Bi-Directional Control Thyristor 5STB 25U5200 Preliminary Doc. No. 5SYA1038-03 Aug. 10 Two thyristors integrated into one wafer Patented free-floating silicon technology Designed for energy management and industrial applications Optimum power handling capability Interdigitated amplifying gate The electrical and thermal data are valid for one-thyristor-half of the device (unless otherwise stated) Blocking Maximum rated values 1) Parameter Max. surge peak forward blocking voltage Symbol Conditions V SM t p = 10 ms, f = 5 Hz T vj = 5...110C, Note 1 Max repetitive peak forward V RM blocking voltage Max crest working forward voltages V WM Critical rate of rise of offstate voltage dv/dt crit 5STB 25U5200 5200 f = 50 Hz, t p = 10 ms, t p1 = 250 s, T vj = 5...110C, Note 1 Exp. to 2950 V, T vj = 110C Unit V 5200 V 2600 V 2000 V/s Characteristic values Parameter Max reverse leakage current Symbol Conditions I R(M) V RM , T vj = 110 C min typ max 400 Unit mA typ 135 max 160 Unit kN Note 1: Voltage de-rating factor of 0.11% per C is applicable for Tvj below +5 C Note 2: Recommended minimum ratio of V DRM / V DWM or V RRM / V RWM = 2. See App. Note 5SYA 2051. Mechanical data Maximum rated values 1) Parameter Mounting force Symbol Conditions FM min 120 Acceleration a Device unclamped 50 m/s2 Acceleration a Device clamped 100 m/s2 Characteristic values Parameter Weight Symbol Conditions m Housing thickness H F M = 135 kN, T a = 25 C min typ 34.6 max 3.6 35.2 Unit kg mm Surface creepage distance D S 53 mm Air strike distance 22 mm Da 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5STB 25U5200 On-state Maximum rated values 1) Parameter Average on-state current Symbol Conditions I T(AV)M Half sine wave, T c = 70 C RMS on-state current I T(RMS) RMS on-state current I T(RMS) Peak non-repetitive surge current I TSM Limiting load integral It Peak non-repetitive surge current I TSM Limiting load integral It min typ Full sine wave, T c = 70C max 1980 Unit A 3100 A 4400 t p = 10 ms, T vj = 110 C, sine wave after surge: V D = V R = 0 V 42.0x10 2 t p = 8.3 ms, T vj = 110 C, sine wave after surge: V D = V R = 0 V 2 A 3 A 2 8.82x106 As 45.0x103 A 8.40x106 As 2 Characteristic values Parameter On-state voltage Symbol Conditions VT I T = 3000 A, T vj = 110 C Threshold voltage V T0 Slope resistance rT Holding current IH Latching current IL min typ max 1.7 Unit V 1.06 V 0.219 m T vj = 25 C 125 mA T vj = 110 C 70 mA T vj = 25 C 900 mA T vj = 110 C 700 mA max 250 Unit A/s 1000 A/s I T = 1300 A - 4000 A, T vj = 110 C Switching Maximum rated values 1) Parameter Critical rate of rise of onstate current Symbol Conditions di/dt crit T vj = 110 C, Critical rate of rise of onstate current di/dt crit Circuit commutated turn-off t q time Critical rate of rise of commutating voltage min typ Cont. I TRM = 3000 A, f = 50 Hz V D 2950 V, Cont. I FG = 2 A, t r = 0.5 s f = 1Hz T vj = 110 C, I TRM = 2000 A, V R = 200 V, di T /dt = -1.5 A/s, V D 0.67V RM , dv D /dt = 20 V/s, 800 s dv/dt com T vj = 110 C, V R 0.67V RM 500 V/s max 5000 Unit As Characteristic values Parameter Reverse recovery charge Reverse recovery current Symbol Conditions T vj = 110 C, I TRM = 2000 A, Q rr V R = 200 V, di T /dt = -1.5 A/s I Gate turn-on delay time t gd RM min 3200 typ 55 T vj = 25 C, V D = 0.4V RM , I FG = 2 A, t r = 0.5 s 85 A 3 s ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1038-03 Aug. 10 page 2 of 7 5STB 25U5200 Triggering Maximum rated values 1) Parameter Peak forward gate voltage Symbol Conditions V FGM Max. rated peak forward gate current Peak reverse gate voltage max 12 Unit V I FGM 10 A V RGM 10 V 3 W Max. rated gate power loss P G Max. rated peak forward gate power min typ For DC gate current see Fig. 9 P GM(AV) W Characteristic values Parameter Gate trigger voltage Symbol Conditions V GT T vj = 25 C min typ max 2.6 Gate trigger current I GT T vj = 25 C Gate non-trigger voltage V GD V D = 0.4 x V RM , T vj = 110 C 0.3 V Gate non-trigger current I GD V D = 0.4 x V RM 10 mA 400 Unit V mA Thermal Maximum rated values 1) Parameter Operating junction temperature range Symbol Conditions T vj min max 110 Unit C 140 C max 8.5 Unit K/kW Single-side cooled F m = 120...160 kN 17 K/kW Double-side cooled F m = 120...160 kN 1.6 K/kW Single-side cooled F m = 120...160 kN 3.2 K/kW Storage temperature range T stg typ -40 Characteristic values Parameter Symbol Conditions Thermal resistance junction R th(j-c) Double-side cooled to case F m = 120...160 kN (Valid for one thyristor half no heat flow to the second half.) R th(j-c) Thermal resistance case to R th(c-h) heatsink R th(c-h) min typ Analytical function for transient thermal impedance: n Z th(j- c) (t) = R i (1- e- t/ i ) i 1 i 1 2 3 4 R i (K/kW) 5.748 1.731 0.688 0.333 i (s) 0.9531 0.1240 0.0144 0.0031 Fig. 1 Transient thermal impedance (junction-tocase) vs. time ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1038-03 Aug. 10 page 3 of 7 5STB 25U5200 Max. on-state characteristic model: Max. on-state characteristic model: V T25 ATvj BTvj IT CTvj ln(IT 1) DTvj IT V T110 ATvj BTvj IT CTvj ln(IT 1) DTvj IT A 25 200.7x10-6 Valid for I T = 500 - 80000 A B 25 C 25 D 25 116.9x10-6 176.4x10-3 -2.518x10-3 Valid for I T = 500 - 80000 A A 110 157.1x10-6 B 110 145.6x10-6 C 110 155.6x10-3 D 110 -27.48x10-6 Fig. 2 On-state voltage characteristics Fig. 3 On-state voltage characteristics Fig. 4 On-state power dissipation vs. mean on-state current. Turn-on losses excluded. Fig. 5 Max. permissible case temperature vs. mean on-state current. Switching losses ignored. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1038-03 Aug. 10 page 4 of 7 5STB 25U5200 Fig. 6 Surge on-state current vs. pulse length. Half-sine wave. IG (t) 100 % 90 % IGM IGM IGon diG/dt tr tp(IGM) Fig. 7 Surge on-state current vs. number of pulses. Half-sine wave, 10 ms, 50Hz. 2..5 A 1.5 IGT 2 A/s 1 s 5...20 s diG/dt IGon 10 % t tr tp (IGM) tp (IGon) Fig. 8 Recommended gate current waveform Fig. 9 Max. peak gate power loss Fig. 10 Reverse recovery charge vs. decay rate of on-state current Fig. 11 Peak reverse recovery current vs. decay rate of on-state current ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1038-03 Aug. 10 page 5 of 7 5STB 25U5200 Turn-on and Turn-off losses Fig. 12 Turn-on energy, half sinusoidal waves Fig. 13 Turn-on energy, rectangular waves Fig. 14 Turn-off energy, half sinusoidal waves Fig. 15 Turn-off energy, rectangular waves Total power loss for repetitive waveforms: IT(t) IT(t), V(t) PTOT PT Won f Woff f -diT/dt where t Qrr V(t) -IRM -V0 T 1 PT IT VT (IT ) dt T 0 dv/dtcom -VRM Fig. 16 Current and voltage waveforms at turn-off Fig. 17 Relationships for power loss ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1038-03 Aug. 10 page 6 of 7 5STB 25U5200 Fig. 18 Device Outline Drawing Related documents: 5SYA 2020 5SYA 2049 5SYA 2051 5SYA 2034 5SYA 2036 5SZK 9104 5SZK 9105 Design of RC-Snubber for Phase Control Applications Voltage definitions for phase control thyristors and diodes Voltage ratings of high power semiconductors Gate-Drive Recommendations for PCT's Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Specification of environmental class for pressure contact diodes, PCTs and GTO, STORAGE available on request, please contact factory Specification of environmental class for pressure contact diodes, PCTs and GTO, TRANSPORTATION available on request, please contact factory Please refer to http://www.abb.com/semiconductors for current version of documents. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1038-03 Aug. 10