1.9
0.950.95
2.9
0.4
1. 3
2. 4
1.0
@vic SOT-23 Plastic-Encapsulate Transistors
MMBT5401LT1 TRANSISTOR (PNP)
FEATURES
Power dissipation
PCM: 0.3 W (Tamb=25℃)
Collector current
ICM: -0.6 A
Collector-base voltage
V(BR)CBO: -160 V
Operating and storage junction temperature range
TJ, T stg: -55℃ to +150 ℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= -100 µA, IE=0 -160 V
Collector-emitter breakdown voltage V(BR)CEO Ic= -1 mA, IB=0 -150 V
E mitter-b ase break dow n vol t age V(BR)EBO IE= - 10µA, IC=0 -5 V
Collector cut-off current ICBO V
CB=-120V, IE=0 -0.1
µA
E mitte r cut-off current IEBO V
EB=-4V, IC=0 -0.1
µA
HFE(1) V
CE= -5V, IC= -1mA 80
HFE(2) V
CE= -5V, IC=-10mA 100 200 DC current gain
HFE(3) V
CE= -5V, IC=-50mA 50
Collector-emitter saturat i on voltage VCE(sat) IC=-50mA, IB= -5mA -0.5 V
Base-emitter saturation
voltage VBE(sat) IC= -50mA, IB= -5mA -1 V
Transition fre quency fT VCE= -5V, I C= -10 mA
f=30MHz 100 MHz
DEVICE MARKING
MMBT5401LT1=2L
-
Unit: mm
SOT-23
1. BASE
2. E MITTER
3. COLLECTOR
