Photomicrosensor (Reflective) EE-SY199 Dimensions Features Note: All units are in millimeters unless otherwise indicated. * Ultra-compact model. * PCB surface mounting type. * RoHS Compliant. (0.7) Center of receiver element Recommended soldering pattern 1.7 (0.55) 1 (0.7) 1.7 Absolute Maximum Ratings (Ta = 25C) 1 Item (0.65) (0.63) 2.7 0.45 Center of emitter element 3.2 0.65 Resin part of light shielding module 1.1 0.4 (0.57) (0.57) C Internal Circuit A C A Direction pattern (NC) Terminal No. IF 50 mA (see note 1) Reverse voltage VR 6V Detector Collector-Emitter voltage VCEO 35 V Emitter-Collector voltage VECO 6V Collector current IC 20 mA Collector dissipation PC 75 mW (see note 1) Total Allowable Loss PTOT 100 mW (see note 1) Ambient Operating temperature Storage Topr -25C to 85C Tstg -40C to 100C 2. The tolerance for the recommended soldering pattern is 0.1mm K Name A K Anode Cathode C E Collector Emitter E Rated value Forward current Note 1. The shaded portion in the above figure may cause shorting. Do not wire in this portion. (1.8) E 0.65 Symbol Emitter 260C (see note 2) Max. Reflow soldering Tsol K Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. Complete soldering within 5 seconds. For reflow soldering, use the conditions given in the Precautions section of this datasheet. Unless otherwise specified, the tolerances are 0.15 mm. Ordering Information Description Model Photomicrosensor (reflective) EE-SY199 Electrical and Optical Characteristics (Ta = 25C) Item Emitter Symbol Value Condition Forward voltage VF 1.2 V typ., 1.4 V max. IF = 20 mA VR = 6 V Reverse current IR 10 A max. Peak emission wavelength P 950 nm typ. --- Light current IL 40 A min., 85 A typ., 130 A max. Aluminum-deposited surface, IF = 4 mA, VCE = 2 V, d = 1 mm (see note) Dark current ID 1 nA typ., 100 nA max. VCE = 20 V, 0 lx Leakage current ILEAK 500 nA max. IF = 4 mA, VCE = 2 V, with no reflection Collector-Emitter saturated voltage VCE (sat) --- --- Peak spectral sensitivity wavelength P 930 nm typ. --- Rising time tr 20 s typ., 100 s max. VCC = 2 V, RL = 1 k, IL = 100 A, d = 1 mm (see note) Falling time tf 20 s typ., 100 s max. VCC = 2 V, RL = 1 k, IL = 100 A, d = 1 mm (see note) Detector Note: Refer to the "Light Current Measurement Setup Diagram" in the Engineering Data section of this datasheet, regarding distance "d". Photomicrosensor (Reflective) EE-SY199 229 Engineering Data Forward Current vs. Collector Dissipation Temperature Rating Light Current vs. Forward Current Characteristics (Typical) 700 PC 60 IF 40 20 0 -40 -20 0 20 40 60 80 25C 100 0C 25C - 10 1 100 0.5 1 1.5 2 2.5 Light Current vs. Collector-Emitter Voltage Characteristics (Typical) Relative Light Current vs. Ambient Temperature Characteristics (Typical) Relative light current IL (%) Light current IL (A) 500 400 10 mA 300 200 7 mA 4 mA 100 2 mA 0 0 2 4 6 8 100 80 60 40 0 -25 tf td 10 ts 0 1 10 100 90 Ta=25C IF=4 mA VCE=2 V 80 75 Aluminum-deposited surface d 70 60 50 40 30 20 10 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 1,000 Distance d (mm) Sensing Position Characteristics (Typical) 20 10-7 10-8 10-9 10-10 0 25 50 75 100 Ambient temperature Ta (C) Sensing Position Characteristics (Typical) 100 White Black d 80 L 60 IF=4 mA VCE=2 V d=1 mm 40 20 0 -6 -5 -4 -3 -2 -1 0 1 2 3 Card moving distance L (mm) Response Time Measurement Circuit 100 Light Current Measurement Setup Diagram Input White Black 0 d 80 Output L t 90% 10% 0 td 60 IF=4 mA VCE=2 V d=1 mm 40 Aluminum-deposited surface t ts tr Input tf IL 20 Glass VCC Output RL 0 -6 -5 -4 -3 -2 -1 0 1 2 3 Card moving distance L (mm) 230 50 Sensing Distance Characteristics (Typical) Load resistance RL (k) Relative light current IL (%) 25 0 1 0.1 15 VCE=20 V Ambient temperature Ta (C) Relative light current IL (%) Response time tr, tf (s) tr 100 10 Dark Current vs. Ambient Tempera ture Characteristics (Typical) 100 Ta=25C IC=100 A VCE=2 V 5 20 Collector-Emitter voltage VCE (V) 1,000 100 10-6 IF=4 mA VCE=2 V 10 Response Time vs. Load Resistance Characteristics (Typical) 200 0 120 IF=15 mA 300 Forward current IF (mA) Forward voltage VF (V) Ta=25C 400 3 Ambient temperature Ta (C) 600 500 0 0 Dark Current ID (nA) 80 Ta=25C VCE=2 V 600 Relative light current IL (%) 100 Ta=75C 50C Light current IL (A) Ptot Forward current IF (mA) Collector dissipation Pc (mW) 120 Forward current IF (mA) Forward Current vs. Forward Voltage Characteristics (Typical) Photomicrosensor (Reflective) EE-SY199 d Unit: mm (inch) Tape and Reel Reel 210.8 130.2 +0.3 2-0 +0.5 60-0 11.41 1802.0 91 Tape 1.250.1 1.550.05 40.1 20.1 40.1 1.750.1 0.30.05 3.50.05 80.3 3.60.1 3.60.1 5 max. 2.20.1 1.10.1 Tape configuration The devices are oriented in the tape carrier so that the emitters are positioned closest to the carrier holes. Pull-out direction Tape quantity / packaging 2,000 pcs./reel, with one reel sealed in an aluminum-laminated bag. Photomicrosensor (Reflective) EE-SY199 231 Precautions Soldering Information Reflow soldering * * * * Reflow no more than once. Adjust the amount of applied solder quantity to the product sidewall of the terminal When designing the pcb, avoid placing traces or other connections under the sensor, as shown in the `Recommend Solder Pattern' diagram Set the reflow oven so that the temperature profile shown in the following chart is obtained for the upper surface of the product being soldered. (C) 250 240C MAX. 200 200C 1 to 4C/sec 1 to 4C/sec Temperature 165C MAX. 150 1 to 4C/sec 10 sec MAX. 100 60 sec MAX. 120 sec MAX. 50 90 sec MAX. 25 Time * Do not immerse the resin part of the sensor into the solder. * The use of an infrared lamp can cause the temperature of the resin to rise too high. Test the soldering method under actual conditions and make sure that the process is acceptable, because the impact on the junction between the device and the PCB varies depending upon the soldering and cooling conditions. Storage Store the product under the following conditions: Temperature: 5 to 30C Humidity: 70% max. To protect the product from the effects of humidity until the package is opened, dry-box storage is recommended. Reflow soldering must be done within 48 hours after opening the aluminum-laminated bag, during which time the product must be stored between 5C and 25C at 60% maximum humidity. If it is necessary to store the product for more than 48 hours after opening the bag, use dry-box storage or reseal the products in the aluminumlaminated bag with a commercially available desiccant. Then, store the sensors between 5 to 30C at 70% max. humidity, mounting them within 2 weeks. Baking If a product has remained packed in the aluminum-laminated bag for six months or more, or if more than 48 hours have lapsed since the bag was opened, then bake the product under the following conditions before use: 125C for 16 to 24 hours (max.) Note: Do not bake the sensors while they are still in their bag. Temporarily mount them to the PCB or place them in metal trays prior to baking. Subject the sensors to the baking process no more than once. Cleaning Conditions Recommended Solvents Ethyl alcohol, methyl alcohol, or isopropyl alcohol Solvent Temperature Immersion Time 45C max 3 hours max Do not use ultrasonic cleaning. 232 Photomicrosensor (Reflective) EE-SY199 MEMO Photomicrosensor (Reflective) EE-SY199 All sales are subject to Omron Electronic Components LLC standard terms and conditions of sale, which can be found at http://www.components.omron.com/components/web/webfiles.nsf/sales_terms.html ALL DIMENSIONS SHOWN ARE IN MILLIMETERS. To convert millimeters into inches, multiply by 0.03937. To convert grams into ounces, multiply by 0.03527. OMRON ON-LINE OMRON ELECTRONIC COMPONENTS LLC Global - http://www.omron.com USA - http://www.components.omron.com 55 E. Commerce Drive, Suite B Schaumburg, IL 60173 847-882-2288 Cat. No. X305-E-1 10/10 Photomicrosensor (Reflective) Specifications subject to change without notice EE-SY199 Printed in USA