Photomicrosensor (Reflective) EE-SY199 229
Photomicrosensor (Reflective)
EE-SY199
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Ultra-compact model.
•PCB surface mounting type.
•RoHS Compliant.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. Complete soldering within 5 seconds. For reflow soldering,
use the conditions given in the Precautions section of this
datasheet.
■Ordering Information
■Electrical and Optical Characteristics (Ta = 25°C)
Note: Refer to the “Light Current Measurement Setup Diagram” in the Engineering Data section of this datasheet, regarding distance “d”.
Internal Circuit
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Recommended
soldering pattern
Unless otherwise specified, the
tolerances are ±0.15 mm.
Note 1. The shaded portion in the above
figure may cause shorting.
Do not wire in this portion.
2. The tolerance for the
recommended soldering pattern
is ±0.1mm
1.7
(0.65)
(0.63)
(0.7)
3.2
1.1
0.4
(1.8)
(0.57)
(0.57)
E
C
K
A
2.7
(0.55)
(0.7)
Center of emitter element
Resin part of light shielding module
Direction pattern (NC)
Center of receiver element
0.65
0.45
11.71
0.65
A
K
C
E
Item Symbol Rated value
Emitter Forward current IF50 mA (see note 1)
Reverse voltage VR6 V
Detector Collector–Emitter
voltage
VCEO 35 V
Emitter–Collector
voltage
VECO 6 V
Collector current IC20 mA
Collector dissipation PC75 mW (see note 1)
Total Allowable Loss PTOT 100 mW (see note 1)
Ambient
temperature
Operating Topr –25°C to 85°C
Storage Tstg –40°C to 100°C
Max. Reflow soldering Tsol 260°C (see note 2)
Description Model
Photomicrosensor (reflective) EE-SY199
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.4 V max. IF = 20 mA
Reverse current IR10 μA max. VR = 6 V
Peak emission wavelength λP950 nm typ. ---
Detector Light current IL40 μA min., 85 μA typ.,
130 μA max.
Aluminum-deposited surface,
IF = 4 mA, VCE = 2 V, d = 1 mm
(see note)
Dark current ID1 nA typ., 100 nA max. VCE = 20 V, 0 lx
Leakage current ILEAK 500 nA max. IF = 4 mA, VCE = 2 V, with no reflection
Collector–Emitter saturated
voltage
VCE (sat) --- ---
Peak spectral sensitivity
wavelength
λP930 nm typ. ---
Rising time tr 20 μs typ., 100 μs max. VCC = 2 V, RL = 1 kΩ,
IL = 100 μA, d = 1 mm (see note)
Falling time tf 20 μs typ., 100 μs max. VCC = 2 V, RL = 1 kΩ,
IL = 100 μA, d = 1 mm (see note)
230 Photomicrosensor (Reflective) EE-SY199
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating
Forward Current vs. Forward
Voltage Characteristics (Typical)
Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Relative Light Current vs. Ambient
Temperature Characteristics (Typical)
Card moving distance L (mm)
Sensing Position Characteristics
(Typical)
Response Time Measurement Light Current Measurement Setup
Diagram
Circuit
Sensing Distance Characteristics
(Typical)
Load resistance R
L
(kΩ)
Dark Current I
D
(nA)
Ambient temperature Ta (°C)
Collector dissipation Pc (mW)
Forward current I
F
(mA)
Collector−Emitter voltage V
CE
(V)Ambient temperature Ta (°C)
Relative light current I
L
(%)
Ambient temperature Ta (°C)
Response time tr, tf (μs)
Relative light current I
L
(%)
Forward current I
F
(mA)
Relative light current I
L
(%)
Card moving distance L (mm)
Sensing Position Characteristics
(Typical)
Relative light current I
L
(%)
Response Time vs. Load Resis-
tance Characteristics (Typical)
Dark Current vs. Ambient Tempera
ture Characteristics (Typical)
Light current I
L
(μA)
Light current I
L
(μA)
Forward current I
F
(mA)
Forward voltage V
F
(V)
d
Aluminum-deposited
surface
Ta=25°C
I
F
=4 mA
V
CE
=2 V
100
90
80
70
60
50
40
30
20
10
0
010.5 1.5 2.5 3.5 4.52345
Distance d (mm)
120
100
80
60
40
20
0-20 0 20 40 60 80 100
P
tot
P
C
I
F
-40
−
100
10
1
25°C
50°C
Ta=75°C
25°C
0°C
0.5 1 1.5 2 2.5 30
Ta=25°C
V
CE
=2 V
700
600
500
400
300
200
100
0
0 5 10 15 20
600
500
400
300
200
100
0
0246810
I
F
=15 mA
10 mA
7 mA
4 mA
2 mA
Ta = 2 5 °C120
100
80
60
40
20
0
-25 0 25 50 75
I
F
=4 mA
V
CE
=2 V
10-6
10-7
10-8
10-9
10-10
0 25 50 75 100
V
CE
=20 V
1,000
100
10
1
0.1 1 10 100 1,000
tr
tf
td
ts
Ta=25°C
I
C
=100 μA
V
CE
=2 V
I
F
=4 mA
V
CE
=2 V
d=1 mm
d
L
White Black
-4 -3-5-6 2 3-1-2 0 1
100
80
60
40
20
0
I
F
=4 mA
V
CE
=2 V
d=1 mm
d
L
White Black
100
80
60
40
20
0-4 -3-5-6 2 3-1-2 0 1
Input
Output
Input
Output
90%
10%
t
t
f
t
r
t
d
t
t
s
0
V
CC
R
L
0
I
LdGlass
Aluminum-deposited surface
Photomicrosensor (Reflective) EE-SY199 231
Unit: mm (inch)
■Tape and Reel
Reel
Tape
Tape configuration
The devices are oriented in the tape carrier so that the emitters are positioned closest to the carrier holes.
Tape quantity / packaging
2,000 pcs./reel, with one reel sealed in an aluminum-laminated bag.
180±
2.0
φ21±
0.8
φ13±
0.2
11.4±
1
9±
1
2
+0.3
−0
60
+0.5
−0
4±
0.1
4±
0.1
φ1.55±
0.05
2±
0.1
1.25±
0.1
0.3±
0.05
3.5±
0.05
3.6±
0.1
1.75±
0.1
8±
0.3
3.6±
0.1
5° max.
2.2±
0.1
φ1.1±
0.1
Pull-out direction
232 Photomicrosensor (Reflective) EE-SY199
Precautions
■Soldering Information
Reflow soldering
•Reflow no more than once.
•Adjust the amount of applied solder quantity to the product sidewall of the terminal
•When designing the pcb, avoid placing traces or other connections under the sensor, as shown in the ‘Recommend Solder Pattern’ diagram
•Set the reflow oven so that the temperature profile shown in the following chart is obtained for the upper surface of the product being soldered.
•Do not immerse the resin part of the sensor into the solder.
•The use of an infrared lamp can cause the temperature of the resin to rise too high. Test the soldering method under actual conditions and make
sure that the process is acceptable, because the impact on the junction between the device and the PCB varies depending upon the soldering
and cooling conditions.
Storage
Store the product under the following conditions:
Temperature: 5 to 30°C
Humidity: 70% max.
To protect the product from the effects of humidity until the package is opened, dry-box storage is recommended.
Reflow soldering must be done within 48 hours after opening the aluminum-laminated bag, during which time the product must be stored between
5°C and 25°C at 60% maximum humidity.
If it is necessary to store the product for more than 48 hours after opening the bag, use dry-box storage or reseal the products in the aluminum-
laminated bag with a commercially available desiccant. Then, store the sensors between 5 to 30°C at 70% max. humidity, mounting them within 2
weeks.
Baking
If a product has remained packed in the aluminum-laminated bag for six months or more, or if more than 48 hours have lapsed since the bag was
opened, then bake the product under the following conditions before use:
125°C for 16 to 24 hours (max.)
Note: Do not bake the sensors while they are still in their bag. Temporarily mount them to the PCB or place them in metal trays prior to baking.
Subject the sensors to the baking process no more than once.
Cleaning Conditions
Do not use ultrasonic cleaning.
50
25
100
120 sec MAX.
60
sec
MAX.
1 to 4°C/sec 1 to 4°C/sec
1 to 4°C/sec
Time
240°C MAX.
200°C
165°C MAX.
150
200
250
(°C)
10 sec MAX.
90 sec MAX.
Temperature
Recommended Solvents Ethyl alcohol, methyl alcohol, or isopropyl alcohol
Solvent Temperature 45°C max
Immersion Time 3 hours max
Photomicrosensor (Reflective) EE-SY199
MEMO
Photomicrosensor (Reflective) EE-SY199
OMRON ON-LINE
Global - http://www.omron.com
USA - http://www.components.omron.com
Cat. No. X305-E-1 Printed in USA
OMRON ELECTRONIC
COMPONENTS LLC
55 E. Commerce Drive, Suite B
Schaumburg, IL 60173
847-882-2288
10/10 Specifications subject to change without notice
All sales are subject to Omron Electronic Components LLC standard terms and conditions of sale, which
can be found at http://www.components.omron.com/components/web/webfiles.nsf/sales_terms.html
ALL DIMENSIONS SHOWN ARE IN MILLIMETERS.
To convert millimeters into inches, multiply by 0.03937. To convert grams into ounces, multiply by 0.03527.
