CBRHDSH1-100
SURFACE MOUNT
HIGH DENSITY
1 AMP SILICON
SCHOTTKY BRIDGE RECTIFIER
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBRHDSH1-100
is a full wave bridge rectifier in a durable epoxy surface
mount molded case, designed for low voltage full wave
rectification applications. The molding compound used
in this device has UL flammability classification 94V-O.
MARKING CODE: CSH110
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL UNITS
Peak Repetitive Reverse Voltage VRRM 100 V
DC Blocking Voltage VR 100 V
RMS Reverse Voltage VR(RMS) 71 V
Average Forward Current IO 1.0 A
Peak Forward Surge Current IFSM 20 A
Power Dissipation PD 1.2 W
Operating Junction Temperature TJ -50 to +125 °C
Storage Temperature Tstg -50 to +150 °C
Thermal Resistance ΘJA 85 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
IR V
R=100V 0.04 10 µA
IR V
R=100V, TA=50°C 1.0 mA
IR V
R=100V, TA=100°C 20 mA
BVR I
R=150µA 100 V
VF I
F=500mA 650 700 mV
VF I
F=1.0A 700 750 mV
CJ V
R=4.0V, f=1.0MHz 230 pF
FEATURES:
• Low Leakage Current (40nA TYP @ VRRM)
• Low Forward Voltage Drop Schottky Diodes
• High 1.0A Current Rating
HD DIP CASE
R4 (7-June 2011)
www.centralsemi.com
CBRHDSH1-100
SURFACE MOUNT
HIGH DENSITY
1 AMP SILICON
SCHOTTKY BRIDGE RECTIFIER
HD DIP CASE - MECHANICAL OUTLINE
MARKING CODE: CSH110
www.centralsemi.com
R4 (7-June 2011)
CBRHDSH1-100
SURFACE MOUNT
HIGH DENSITY
1 AMP SILICON
SCHOTTKY BRIDGE RECTIFIER
TYPICAL ELECTRICAL CHARACTERISTICS
R4 (7-June 2011)
www.centralsemi.com
