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© 2000 IXYS All rights reserved
Features
• International standard package
JEDEC TO-247 AD
• High frequency IGBT and anti-parallel
FRED in one package
• 2nd generation HDMOSTM process
• Low VCE(sat)
- for minimum on-state conduction
losses
• MOS Gate turn-on
- drive simplicity
• Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low IRM
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
power supplies
Advantages
• Space savings (two devices in one
package)
• Suitable for surface mounting
• Easy to mount with 1 screw, TO-247
(isolated mounting screw hole)
• Reduces assembly time and cost
HiPerFASTTM IGBT with Diode
Short Circuit SOA Capability
92820I (7/00)
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C600 V
VCGR TJ= 25°C to 150°C; RGE = 1 MW600 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C48A
IC90 TC= 90°C24A
ICM TC= 25°C, 1 ms 96 A
SSOA VGE= 15 V, TVJ = 125°C, RG = 10 W ICM = 48 A
(RBSOA) Clamped inductive load, L = 100 mH @ 0.8 VCES
tSC VGE= 15 V, VCE = 360 V, TJ = 125°C, 10 ms
(SCSOA) RG = 82 W, non-repetitive
PCTC= 25°C 150 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
Maximum Lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s 26 0 °C
MdMounting torque, TO-247 1.13/10 Nm/lb.in.
Weight TO-247 AD 6 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES IC= 750 mA, V GE = 0 V 600 V
VGE(th) IC= 1.5 mA, VCE = VGE 3.5 6.5 V
ICES VCE = 0.8 • VCES TJ = 25°C 500 mA
VGE = 0 V TJ = 125°C8mA
IGES VCE = 0 V, VGE = ±20 V ±100 nA
VCE(sat) IC= IC90, VGE = 15 V IXSH 24N60U1 2.2 V
IXSH 24N60AU1 2. 7 V
GCE
TO-247 AD
C (TAB)
G = Gate, C = Collector,
E = Emitter, TAB = Collector
VCES IC25 VCE(sat)
IXSH 24N60U1 600 V 48 A 2.2 V
IXSH 24N60AU1 600 V 48 A 2.7 V
IXYS reserves the right to change limits, test conditions, and dimensions.
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© 2000 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC= IC90; V CE = 10 V, 9 13 S
Pulse test, t £ 300 ms, duty cycle £ 2 %
IC(on) VGE = 15 V, VCE = 10 V 65 A
Cies 1800 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 200 pF
Cres 45 pF
Qg75 90 nC
Qge IC = IC90, VGE = 15 V, VCE = 0.5 VCES 20 30 nC
Qgc 35 50 nC
td(on) 100 ns
tri 200 ns
td(off) 450 ns
tfi 24N60U1 500 ns
24N60AU1 275 ns
Eoff 24N60AU1 2 mJ
td(on) 100 ns
tri 200 ns
Eon 1.8 mJ
td(off) 475 ns
tfi 24N60U1 600 ns
24N60AU1 450 ns
Eoff 24N60U1 4 mJ
24N60AU1 3 mJ
RthJC 0.83 K/W
RthCK 0.25 K/W
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
VFIF = IC90, VGE = 0 V, 1.6 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IRM IF = IC90, V GE = 0 V, -diF/dt = 240 A/ms1015A
trr VR = 360 V TJ = 125°C 150 ns
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V TJ = 25°C35 50ns
RthJC 1 K/W
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 100 mH,
VCE = 0.8 VCES, RG = Roff = 10 W
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 100 mH
VCE = 0.8 VCES, RG = Roff = 10 W
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
TO-247 AD (IXSH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
IXSH 24N60U1
IXSH 24N60AU1
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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