A Business Partner of Renesas Electronics Corporation. Preliminary PA862TD Data Sheet NPN Silicon RF Twin Transistor (with 2 Different Elements) in a 6-pin Lead-less Minimold R09DS0032EJ0200 Rev.2.00 Dec 19, 2011 FEATURES <R> * Low voltage operation * 2 different built-in transistors (2SC5010, 2SC5801) Q1: Built-in high gain transistor fT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Built-in low phase distortion transistor suited for OSC operation fT = 4.5 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz * 6-pin lead-less minimold package BUILT-IN TRANSISTORS <R> <R> 3-pin thin-type ultra super minimold part No. Q1 Q2 2SC5010 2SC5801 ORDERING INFORMATION Part Number Order Number Quantity Package PA862TD PA862TD-T3 Supplying Form PA862TD-A 50 pcs (Non reel) 6-pin lead -less minimold * 8 mm wide embossed taping PA862TD-T3-A 10 kpcs/reel (1208) (Pb-Free) * Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape Remark To order evaluation samples, please contact your nearby sales office. Unit sample quantity is 50 pcs. CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. R09DS0032EJ0200 Rev.2.00 Dec 19, 2011 Page 1 of 18 A Business Partner of Renesas Electronics Corporation. PA862TD ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Symbol Ratings Unit Q1 Q2 Collector to Base Voltage VCBO 9 9 V Collector to Emitter Voltage VCEO 6 5.5 V Emitter to Base Voltage VEBO 2 1.5 V 30 100 mA 180 190 mW Collector Current Total Power Dissipation IC Ptot Note 210 in 2 elements Junction Temperature Tj 150 C Storage Temperature Tstg -65 to +150 C 2 Note Mounted on 1.08 cm x 1.0 mm (t) glass epoxy PCB R 0 9 D S 0 0 3 2 E J 0 2 0 0 R e v. 2 . 0 0 Dec 19, 2011 P a ge 2 of 1 8 A Business Partner of Renesas Electronics Corporation. PA862TD ELECTRICAL CHARACTERISTICS (TA = +25C) (1) Q1 Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Collector Cut-off Current ICBO VCB = 5 V, IE = 0 - - 100 nA Emitter Cut-off Current IEBO VBE = 1 V, IC = 0 - - 100 nA VCE = 3 V, IC = 10 mA 75 110 150 - VCE = 3 V, IC = 10 mA, f = 2 GHz 10.0 12.0 - GHz S21e VCE = 3 V, IC = 10 mA, f = 2 GHz 7.0 8.5 - dB NF VCE = 3 V, IC = 3 mA, f = 2 GHz, ZS = Zopt - 1.5 2.5 dB VCB = 3 V, IE = 0, f = 1 MHz - 0.4 0.7 pF MIN. TYP. MAX. Unit DC Current Gain hFE Gain Bandwidth Product Note 1 fT Insertion Power Gain 2 Noise Figure Reverse Transfer Capacitance Cre Note 2 (2) Q2 Parameter Symbol Test Conditions Collector Cut-off Current ICBO VCB = 5 V, IE = 0 - - 600 nA Emitter Cut-off Current IEBO VBE = 1 V, IC = 0 - - 600 nA VCE = 1 V, IC = 5 mA 100 120 145 - DC Current Gain hFE Note 1 Gain Bandwidth Product (1) fT VCE = 1 V, IC = 5 mA, f = 2 GHz 3.0 4.5 - GHz Gain Bandwidth Product (2) fT VCE = 1 V, IC = 15 mA, f = 2 GHz 5.0 6.5 - GHz VCE = 1 V, IC = 5 mA, f = 2 GHz 3.0 4.0 - dB S21e VCE = 1 V, IC = 15 mA, f = 2 GHz 4.5 5.5 - dB NF VCE = 1 V, IC = 10 mA, f = 2 GHz, ZS = Zopt - 1.9 2.5 dB VCB = 0.5 V, IE = 0, f = 1 MHz - 0.6 0.8 pF Insertion Power Gain (1) 2 S21e Insertion Power Gain (2) 2 Noise Figure Reverse Transfer Capacitance Cre Note 2 Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2% 2. Collector to base capacitance when the emitter grounded hFE CLASSIFICATION Rank FB/YFB Marking vY hFE Value of Q1 75 to 150 hFE Value of Q2 100 to 145 R09DS0032EJ0200 Rev.2.00 Dec 19, 2011 Page 3 of 18 A Business Partner of Renesas Electronics Corporation. PA862TD TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Total Power Dissipation Ptot (mW) 300 Mounted on Glass Epoxy PCB (1.08 cm2 x 1.0 mm (t) ) 250 2 Elements in total 210 200 190 180 150 Q2 Q1 100 50 25 0 50 75 100 125 150 Ambient Temperature TA (C) Q1 Q2 0.5 f = 1 MHz 0.4 0.3 0.2 0.1 0 2 4 6 8 REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Reverse Transfer Capacitance Cre (pF) Reverse Transfer Capacitance Cre (pF) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 10 Collector to Base Voltage VCB (V) 1.0 f = 1 MHz 0.8 0.6 0.4 0.2 0 2 4 6 8 10 Collector to Base Voltage VCB (V) Remark The graphs indicate nominal characteristics. R09DS0032EJ0200 Rev.2.00 Dec 19, 2011 Page 4 of 18 A Business Partner of Renesas Electronics Corporation. PA862TD Q1 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 VCE = 1 V 10 Collector Current IC (mA) Collector Current IC (mA) 100 Q2 1 0.1 0.01 0.001 0.6 0.7 0.8 0.9 1.0 1 0.1 0.01 0.5 0.6 0.7 0.8 0.9 Base to Emitter Voltage VBE (V) Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 VCE = 2 V 1 0.1 0.01 0.001 1.0 VCE = 2 V 10 1 0.1 0.01 0.001 0.0001 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Base to Emitter Voltage VBE (V) Collector Current IC (mA) 10 0.0001 0.4 Collector Current IC (mA) Collector Current IC (mA) 0.5 10 100 VCE = 1 V 0.001 0.0001 0.4 100 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 0.0001 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VCE = 3 V 10 1 0.1 0.01 0.001 0.0001 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Base to Emitter Voltage VBE (V) Remark The graphs indicate nominal characteristics. R09DS0032EJ0200 Rev.2.00 Dec 19, 2011 Page 5 of 18 A Business Partner of Renesas Electronics Corporation. PA862TD Q1 Q2 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 300 A 30 270 A 240 A 210 A 180 A 150 A 120 A 90 A 60 A 20 10 0 1 2 3 4 5 IB = 30 A 6 7 60 Collector Current IC (mA) Collector Current IC (mA) 40 8 Collector to Emitter Voltage VCE (V) 400 A 360 A 320 A 50 40 280 A 240 A 30 200 A 160 A 20 120 A 80 A 10 0 1 2 3 4 5 IB = 40 A 7 6 Collector to Emitter Voltage VCE (V) Remark The graphs indicate nominal characteristics. R09DS0032EJ0200 Rev.2.00 Dec 19, 2011 Page 6 of 18 A Business Partner of Renesas Electronics Corporation. PA862TD Q1 1 000 1 10 DC Current Gain hFE VCE = 1 V 1 10 100 Collector Current IC (mA) Collector Current IC (mA) DC CURRENT GAIN vs. COLLECTOR CURRENT DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = 2 V 1 10 100 Collector Current IC (mA) 1 000 DC CURRENT GAIN vs. COLLECTOR CURRENT 100 10 0.1 100 100 10 0.1 1 000 DC Current Gain hFE VCE = 1 V 100 10 0.1 DC Current Gain hFE DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 DC Current Gain hFE DC Current Gain hFE 1 000 Q2 VCE = 2 V 100 10 0.1 1 10 100 Collector Current IC (mA) DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = 3 V 100 10 0.1 1 10 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. R09DS0032EJ0200 Rev.2.00 Dec 19, 2011 Page 7 of 18 A Business Partner of Renesas Electronics Corporation. PA862TD Q1 10 8 6 4 2 0 1 14 Gain Bandwidth Product fT (GHz) 10 VCE = 1 V f = 2 GHz Gain Bandwidth Product fT (GHz) 12 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 12 10 4 2 10 100 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 10 VCE = 2 V f = 2 GHz 6 4 2 0 1 10 100 Collector Current IC (mA) Gain Bandwidth Product fT (GHz) 6 Collector Current IC (mA) 8 12 VCE = 1 V f = 2 GHz Collector Current IC (mA) 10 14 8 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 0 1 100 Gain Bandwidth Product fT (GHz) Gain Bandwidth Product fT (GHz) 14 Q2 8 VCE = 2 V f = 2 GHz 6 4 2 0 1 10 100 Collector Current IC (mA) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT VCE = 3 V f = 2 GHz 10 8 6 4 2 0 1 10 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. R09DS0032EJ0200 Rev.2.00 Dec 19, 2011 Page 8 of 18 A Business Partner of Renesas Electronics Corporation. PA862TD VCE = 1 V IC = 10 mA 30 25 MSG MAG 20 15 10 |S21e|2 5 0 0.1 35 1 10 25 20 MSG MAG 15 10 5 |S21e|2 0 0.1 1 10 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY VCE = 2 V IC = 10 mA MSG MAG 15 10 |S21e|2 5 0 0.1 1 10 35 VCE = 1 V IC = 15 mA 30 25 MSG MAG 20 15 10 |S21e|2 5 0 0.1 1 10 Frequency f (GHz) Frequency f (GHz) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY VCE = 3 V IC = 10 mA 30 25 VCE = 1 V IC = 5 mA 30 Frequency f (GHz) 20 35 35 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Frequency f (GHz) 30 25 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 35 Q2 MSG MAG 20 15 10 |S21e|2 5 0 0.1 1 10 Frequency f (GHz) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Q1 35 VCE = 2 V IC = 5 mA 30 25 20 MSG MAG 15 10 5 0 0.1 |S21e|2 1 10 Frequency f (GHz) Remark The graphs indicate nominal characteristics. R09DS0032EJ0200 Rev.2.00 Dec 19, 2011 Page 9 of 18 A Business Partner of Renesas Electronics Corporation. PA862TD Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Q2 35 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY VCE = 2 V IC = 15 mA 30 25 MSG MAG 20 15 10 |S21e|2 5 0 0.1 1 10 Frequency f (GHz) Remark The graph indicates nominal characteristics. R09DS0032EJ0200 Rev.2.00 Dec 19, 2011 Page 10 of 18 A Business Partner of Renesas Electronics Corporation. PA862TD Q1 Q2 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT VCE = 1 V f = 1 GHz 20 MSG 15 MAG |S21e|2 10 5 0 1 10 100 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 25 20 VCE = 1 V f = 1 GHz MSG MAG 15 |S21e|2 10 5 0 1 10 100 Collector Current IC (mA) Collector Current IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG vs. COLLECTOR CURRENT VCE = 1 V f = 2 GHz 20 15 MSG MAG 10 |S21e|2 5 0 1 25 10 100 MAG 10 |S21e|2 5 0 -5 1 10 100 Collector Current IC (mA) INSERTION POWER GAIN, MAG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 15 10 MAG 5 0 VCE = 1 V f = 2 GHz Collector Current IC (mA) VCE = 1 V f = 4 GHz 20 15 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) 25 |S21e|2 1 10 100 Collector Current IC (mA) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 15 VCE = 1 V f = 4 GHz 10 MSG 5 0 MAG |S21e|2 -5 -10 1 10 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. R09DS0032EJ0200 Rev.2.00 Dec 19, 2011 Page 11 of 18 A Business Partner of Renesas Electronics Corporation. PA862TD Q1 Q2 VCE = 2 V f = 1 GHz 20 MSG MAG |S21e|2 15 10 5 0 1 10 100 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 25 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 VCE = 2 V f = 1 GHz MSG MAG 15 |S21e|2 10 5 0 1 10 100 Collector Current IC (mA) Collector Current IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG vs. COLLECTOR CURRENT VCE = 2 V f = 2 GHz 20 15 MSG MAG 10 |S21e|2 5 0 1 25 10 100 10 MAG |S21e|2 5 0 -5 1 10 100 Collector Current IC (mA) INSERTION POWER GAIN, MAG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 15 10 MAG 5 0 VCE = 2 V f = 2 GHz Collector Current IC (mA) VCE = 2 V f = 4 GHz 20 15 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) 25 |S21e| 1 2 10 100 Collector Current IC (mA) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 10 VCE = 2 V f = 4 GHz MSG MAG 5 |S21e|2 0 -5 -10 1 10 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. R09DS0032EJ0200 Rev.2.00 Dec 19, 2011 Page 12 of 18 A Business Partner of Renesas Electronics Corporation. PA862TD Q1 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 25 VCE = 3 V f = 1 GHz 20 MSG MAG |S21e|2 15 10 5 0 1 10 100 Collector Current IC (mA) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 25 VCE = 3 V f = 2 GHz 20 15 MSG MAG 10 |S21e|2 5 0 1 10 100 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Collector Current IC (mA) INSERTION POWER GAIN, MAG vs. COLLECTOR CURRENT 25 VCE = 3 V f = 4 GHz 20 15 10 MAG 5 0 |S21e|2 1 10 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. R09DS0032EJ0200 Rev.2.00 Dec 19, 2011 Page 13 of 18 A Business Partner of Renesas Electronics Corporation. PA862TD 8 2 4 NF 1 9 2 6 0 3 NF 1 0 100 10 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 20 Ga 12 8 2 4 NF 1 Ga 4 12 3 9 2 6 NF 0 1 3 0 100 10 Collector Current IC (mA) Collector Current IC (mA) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 8 20 16 6 Ga 12 8 4 2 NF 1 10 4 6 0 100 Collector Current IC (mA) VCE = 1 V f = 2 GHz 5 Noise Figure NF (dB) VCE = 1 V f = 2 GHz 18 15 1 0 100 10 VCE = 1 V f = 1.5 GHz 5 Noise Figure NF (dB) 16 6 Associated Gain Ga (dB) VCE = 1 V f = 1.5 GHz 4 0 3 Collector Current IC (mA) 6 10 12 Collector Current IC (mA) 8 0 15 4 1 0 100 10 Ga 18 12 Ga 3 2 NF 9 6 3 1 0 18 15 4 1 Associated Gain Ga (dB) 4 VCE = 1 V f = 1 GHz Associated Gain Ga (dB) 12 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 5 Noise Figure NF (dB) 16 6 Associated Gain Ga (dB) Ga 20 6 10 Noise Figure NF (dB) VCE = 1 V f = 1 GHz 8 0 Noise Figure NF (dB) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT Associated Gain Ga (dB) Noise Figure NF (dB) 10 Q2 10 Associated Gain Ga (dB) Q1 0 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. R09DS0032EJ0200 Rev.2.00 Dec 19, 2011 Page 14 of 18 A Business Partner of Renesas Electronics Corporation. PA862TD 2 4 NF 1 9 2 6 0 3 NF 1 0 100 10 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 20 Ga 4 8 2 4 NF 1 Ga 4 12 3 9 2 6 NF 0 1 3 0 100 10 Collector Current IC (mA) Collector Current IC (mA) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 8 20 16 6 Ga 12 8 4 2 NF 1 10 4 6 0 100 Collector Current IC (mA) VCE = 2 V f = 2 GHz 5 Noise Figure NF (dB) VCE = 2 V f = 2 GHz 18 15 1 0 100 10 VCE = 2 V f = 1.5 GHz 5 Noise Figure NF (dB) 16 6 Associated Gain Ga (dB) VCE = 2 V f = 1.5 GHz 12 0 3 Collector Current IC (mA) 6 10 12 Collector Current IC (mA) 8 0 15 4 1 0 100 10 Ga 18 Ga 12 9 3 2 NF 6 3 1 0 18 15 4 1 Associated Gain Ga (dB) 4 8 VCE = 2 V f = 1 GHz Associated Gain Ga (dB) 12 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 5 Noise Figure NF (dB) 16 6 Associated Gain Ga (dB) Ga 20 6 10 Noise Figure NF (dB) VCE = 2 V f = 1 GHz 8 0 Noise Figure NF (dB) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT Associated Gain Ga (dB) Noise Figure NF (dB) 10 Q2 10 Associated Gain Ga (dB) Q1 0 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. R09DS0032EJ0200 Rev.2.00 Dec 19, 2011 Page 15 of 18 A Business Partner of Renesas Electronics Corporation. PA862TD Q1 VCE = 3 V f = 1 GHz 8 Ga 20 16 6 12 4 8 2 0 4 NF 1 Associated Gain Ga (dB) Noise Figure NF (dB) 10 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 0 100 10 Collector Current IC (mA) VCE = 3 V f = 1.5 GHz 8 20 16 Ga 6 12 4 8 2 0 4 NF 1 Associated Gain Ga (dB) Noise Figure NF (dB) 10 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 0 100 10 Collector Current IC (mA) VCE = 3 V f = 2 GHz 8 16 Ga 6 12 8 4 2 0 20 NF 1 10 4 Associated Gain Ga (dB) Noise Figure NF (dB) 10 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 0 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. R09DS0032EJ0200 Rev.2.00 Dec 19, 2011 Page 16 of 18 A Business Partner of Renesas Electronics Corporation. PA862TD S-PARAMETERS S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. [RF and Microwave] [Device Parameters] URL http://www2.renesas.com/microwave/en/download.html R09DS0032EJ0200 Rev.2.00 Dec 19, 2011 Page 17 of 18 A Business Partner of Renesas Electronics Corporation. PA862TD PACKAGE DIMENSIONS 6-PIN LEAD-LESS MINIMOLD (1208) (UNIT: mm) 1.00.05 0.150.05 6 5 2 C1 E1 4 3 0.4 0.8 (Top View) vY 0.4 1 0.8+0.07 -0.05 1.2+0.07 -0.05 C2 1 Q1 2 3 6 5 Q2 4 B1 E2 B2 PIN CONNECTIONS 0.125+0.1 -0.05 0.50.05 <R> (Bottom View) 0.2 R09DS0032EJ0200 Rev.2.00 Dec 19, 2011 1. 2. 3. 4. 5. 6. Collector (Q1) Emitter (Q1) Collector (Q2) Base (Q2) Emitter (Q2) Base (Q1) 0.1 0.6 Page 18 of 18