81 fo 1 egaP 00.2.veR 0020JE2300SD90R
Dec 19, 2011
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Preliminary
Data Sheet
μ
PA862TD
NPN Silicon RF Twin Transistor (with 2 Different Elements)
in a 6-pin Lead-less Minimold
FEATURES
• Low voltage operation
• 2 different built-in transistors (2SC5010, 2SC5801)
Q1: Built-in high gain transistor
fT = 12.0 GHz TYP., ⏐S21e⏐2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz
Q2: Built-in low phase distortion transistor suited for OSC operation
fT = 4.5 GHz TYP., ⏐S21e⏐2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz
• 6-pin lead-less minimold package
BUILT-IN TRANSISTORS
2Q 1Q
3-pin thin-type ultra super minimold part No. 2SC5010 2SC5801
ORDERING INFORMATION
Part Number Order Number Quantity Package Supplying Form
μ
PA862TD
μ
PA862TD-A 50 pcs (Non reel) 6-pin lead -less minimold • 8 mm wide embossed taping
μ
PA862TD-T3
μ
PA862TD-T3-A 10 kpcs/reel (1208) (Pb-Free) • Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face
the perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0032EJ0200
Rev.2.00
Dec 19, 2011
<R>
<R>
<R>
A Business Partner of Renesas Electronics Corporation.
μ
PA862TD
81 fo 2 egaP 00.2.veR 0020JE2300SD90R
Dec 19, 2011
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter Symbol Ratings Unit
2Q 1Q
Collector to Base Voltage VCBO 9 9 V
Collector to Emitter Voltage VCEO 6 5.5 V
Emitter to Base Voltage VEBO 2 1.5 V
I tnerruC rotcelloC C 30 100 mA
180 190
Total Power Dissipation Ptot Note
210 in 2 elements
mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg −65 to +150 °C
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
A Business Partner of Renesas Electronics Corporation.
μ
PA862TD
81 fo 3 egaP 00.2.veR 0020JE2300SD90R
Dec 19, 2011
ELECTRICAL CHARACTERISTICS (TA = +25°C)
(1) Q1
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
Collector Cut-off Current ICBO VCB = 5 V, IE = 0 − − 100 nA
Emitter Cut-off Current IEBO VBE = 1 V, IC = 0 − − 100 nA
h niaG tnerruC CD FE Note 1 VCE = 3 V, IC = 10 mA 75 110 150 −
Gain Bandwidth Product fT VCE = 3 V, IC = 10 mA, f = 2 GHz 10.0 12.0 − GHz
Insertion Power Gain ⏐S21e⏐2 VCE = 3 V, IC = 10 mA, f = 2 GHz 7.0 8.5 − dB
FN erugiF esioN VCE = 3 V, IC = 3 mA, f = 2 GHz,
ZS = Zopt − 1.5 2.5 dB
Reverse Transfer Capacitance Cre Note 2 VCB = 3 V, IE = 0, f = 1 MHz − 0.4 0.7 pF
(2) Q2
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
Collector Cut-off Current ICBO VCB = 5 V, IE = 0 − − 600 nA
Emitter Cut-off Current IEBO VBE = 1 V, IC = 0 − − 600 nA
h niaG tnerruC CD FE Note 1 VCE = 1 V, IC = 5 mA 100 120 145 −
Gain Bandwidth Product (1) fT VCE = 1 V, IC = 5 mA, f = 2 GHz 3.0 4.5 − GHz
Gain Bandwidth Product (2) fT VCE = 1 V, IC = 15 mA, f = 2 GHz 5.0 6.5 − GHz
Insertion Power Gain (1) ⏐S21e⏐2 VCE = 1 V, IC = 5 mA, f = 2 GHz 3.0 4.0 − dB
Insertion Power Gain (2) ⏐S21e⏐2 VCE = 1 V, IC = 15 mA, f = 2 GHz 4.5 5.5 − dB
FN erugiF esioN VCE = 1 V, IC = 10 mA, f = 2 GHz,
ZS = Zopt − 1.9 2.5 dB
Reverse Transfer Capacitance Cre Note 2 VCB = 0.5 V, IE = 0, f = 1 MHz − 0.6 0.8 pF
Notes 1. Pulse measurement: PW ≤ 350
μ
s, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank FB/YFB
Marking vY
hFE Value of Q1 75 to 150
hFE Value of Q2 100 to 145
A Business Partner of Renesas Electronics Corporation.
μ
PA862TD
81 fo 4 egaP 00.2.veR 0020JE2300SD90R
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TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C)
300
250
210
190
180
200
150
100
50
025 50 75 100 125 150
Total Power Dissipation P
tot
(mW)
Ambient Temperature T
A
(˚C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Mounted on Glass Epoxy PCB
(1.08 cm
2
× 1.0 mm (t) )
2 Elements in total
Q2
Q1
2Q 1Q
Reverse Transfer Capacitance Cre (pF)
Collector to Base Voltage VCB (V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
0.5
0.4
0.3
0.2
0.1
0 2 4 6 8 10
f = 1 MHz
Reverse Transfer Capacitance Cre (pF)
Collector to Base Voltage VCB (V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
1.0
0.8
0.6
0.4
0.2
0 2 4 6 8 10
f = 1 MHz
Remark The graphs indicate nominal characteristics.
A Business Partner of Renesas Electronics Corporation.
μ
PA862TD
81 fo 5 egaP 00.2.veR 0020JE2300SD90R
Dec 19, 2011
2Q 1Q
V
CE
= 1 V
Collector Current I
C
(mA)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.01
0.001
0.1
0.0001 0.70.5 0.6 0.19.08.04.0
V
CE
= 2 V
Collector Current I
C
(mA)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.01
0.001
0.1
0.0001 0.70.5 0.6 0.19.08.04.0
V
CE
= 1 V
Collector Current I
C
(mA)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.01
0.001
0.1
0.0001 0.70.5 0.6 0.19.08.04.0
V
CE
= 2 V
Collector Current I
C
(mA)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.01
0.001
0.1
0.0001 0.70.5 0.6 0.19.08.04.0
V
CE
= 3 V
Collector Current I
C
(mA)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.01
0.001
0.1
0.0001 0.70.5 0.6 0.19.08.04.0
Remark The graphs indicate nominal characteristics.
A Business Partner of Renesas Electronics Corporation.
μ
PA862TD
81 fo 6 egaP 00.2.veR 0020JE2300SD90R
Dec 19, 2011
2Q 1Q
20
40
30
10
04 5 73 8621
Collector Current I
C
(mA)
Collector to Emitter Voltage V
CE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
I
B
= 30 A
μ
60 A
μ
90 A
μ
150 A
μ
180 A
μ
210 A
μ
120 A
μ
240 A
μ
270 A
μ
300 A
μ
Collector Current I
C
(mA)
Collector to Emitter Voltage V
CE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
60
30
40
50
10
20
0 1 2 3 4 5 6 7
I
B
= 40 A
μ
320 A
μ
280 A
μ
240 A
μ
200 A
μ
160 A
μ
120 A
μ
80 A
μ
360 A
μ
400 A
μ
Remark The graphs indicate nominal characteristics.
A Business Partner of Renesas Electronics Corporation.
μ
PA862TD
81 fo 7 egaP 00.2.veR 0020JE2300SD90R
Dec 19, 2011
2Q 1Q
1 000
100
10 1 001011.0
DC Current Gain h
FE
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
V
CE
= 1 V
1 000
100
10 1 001011.0
DC Current Gain h
FE
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
V
CE
= 2 V
1 000
100
10 1 001011.0
DC Current Gain h
FE
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
V
CE
= 3 V
1 000
100
10 1 001011.0
DC Current Gain h
FE
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
V
CE
= 1 V
1 000
100
10 1 001011.0
DC Current Gain h
FE
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
V
CE
= 2 V
Remark The graphs indicate nominal characteristics.
A Business Partner of Renesas Electronics Corporation.
μ
PA862TD
81 fo 8 egaP 00.2.veR 0020JE2300SD90R
Dec 19, 2011
2Q 1Q
14
8
6
4
2
12
10
01 10 100
Gain Bandwidth Product fT (GHz)
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
VCE = 1 V
f = 2 GHz
10
8
6
4
2
01 10 100
Gain Bandwidth Product fT (GHz)
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
VCE = 1 V
f = 2 GHz
14
8
6
4
2
12
10
01 10 100
Gain Bandwidth Product fT (GHz)
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
VCE = 2 V
f = 2 GHz
14
8
6
4
2
12
10
01 10 100
Gain Bandwidth Product fT (GHz)
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
VCE = 3 V
f = 2 GHz
10
8
6
4
2
01 10 100
Gain Bandwidth Product fT (GHz)
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
VCE = 2 V
f = 2 GHz
Remark The graphs indicate nominal characteristics.
A Business Partner of Renesas Electronics Corporation.
μ
PA862TD
81 fo 9 egaP 00.2.veR 0020JE2300SD90R
Dec 19, 2011
2Q 1Q
V
CE
= 1 V
I
C
= 10 mA
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
35
30
25
20
15
10
5
0
0.1 1 10
MAG
MSG
|S
21e
|
2
V
CE
= 2 V
I
C
= 10 mA
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
35
30
25
20
15
10
5
0
0.1 1 10
MAG
MSG
|S
21e
|
2
V
CE
= 3 V
I
C
= 10 mA
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
35
30
25
20
15
10
5
0
0.1 1 10
MAG
MSG
|S
21e
|
2
V
CE
= 1 V
I
C
= 5 mA
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
35
30
25
20
15
10
5
0
0.1 1 10
MAG
MSG
|S
21e
|
2
V
CE
= 2 V
I
C
= 5 mA
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
35
30
25
20
15
10
5
0
0.1 1 10
MAG
MSG
|S
21e
|
2
V
CE
= 1 V
I
C
= 15 mA
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
35
30
25
20
15
10
5
0
0.1 1 10
MAG
MSG
|S
21e
|
2
Remark The graphs indicate nominal characteristics.
A Business Partner of Renesas Electronics Corporation.
μ
PA862TD
81 fo 01 egaP 00.2.veR 0020JE2300SD90R
Dec 19, 2011
2Q
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
35
30
25
20
15
10
5
0
0.1 1 10
VCE = 2 V
IC = 15 mA
MAG
MSG
|S21e|2
Remark The graph indicates nominal characteristics.
A Business Partner of Renesas Electronics Corporation.
μ
PA862TD
81 fo 11 egaP 00.2.veR 0020JE2300SD90R
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2Q 1Q
VCE = 1 V
f = 1 GHz
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
25
20
10
5
15
01 10 100
MAGMSG
|S21e|2
VCE = 1 V
f = 4 GHz
Collector Current IC (mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
25
20
10
5
15
01 10 100
MAG
|S21e|2
VCE = 1 V
f = 2 GHz
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
25
20
10
5
15
01 10 100
MAG
MSG
|S21e|2
VCE = 1 V
f = 1 GHz
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
20
15
10
5
01 10 100
MAGMSG
|S21e|2
VCE = 1 V
f = 2 GHz
Collector Current IC (mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
15
10
5
0
–51 10 100
|S21e|2
MAG
VCE = 1 V
f = 4 GHz
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
15
10
5
0
–5
–101 10 100
MAG
MSG
|S21e|2
Remark The graphs indicate nominal characteristics.
A Business Partner of Renesas Electronics Corporation.
μ
PA862TD
81 fo 21 egaP 00.2.veR 0020JE2300SD90R
Dec 19, 2011
2Q 1Q
V
CE
= 2 V
f = 1 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
25
20
10
5
15
01 10 100
MAGMSG
|S
21e
|
2
V
CE
= 2 V
f = 2 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
15
10
5
0
–51 10 100
|S
21e
|
2
MAG
V
CE
= 2 V
f = 4 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
25
20
10
5
15
01 10 100
MAG
|S
21e
|
2
V
CE
= 2 V
f = 2 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
25
20
10
5
15
01 10 100
MAG
MSG
|S
21e
|
2
V
CE
= 2 V
f = 1 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
20
15
10
5
01 10 100
MAGMSG
|S
21e
|
2
V
CE
= 2 V
f = 4 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
10
5
0
–5
–101 10 100
MAG
MSG
|S
21e
|
2
Remark The graphs indicate nominal characteristics.
A Business Partner of Renesas Electronics Corporation.
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PA862TD
81 fo 31 egaP 00.2.veR 0020JE2300SD90R
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1Q
V
CE
= 3 V
f = 1 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
25
20
10
5
15
01 10 100
MAGMSG
|S
21e
|
2
V
CE
= 3 V
f = 4 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
25
20
10
5
15
01 10 100
MAG
|S
21e
|
2
V
CE
= 3 V
f = 2 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
25
20
10
5
15
01 10 100
MAG
MSG
|S
21e
|
2
Remark The graphs indicate nominal characteristics.
A Business Partner of Renesas Electronics Corporation.
μ
PA862TD
81 fo 41 egaP 00.2.veR 0020JE2300SD90R
Dec 19, 2011
2Q 1Q
10
8
6
4
2
0
20
16
12
4
8
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 1 V
f = 1 GHz
NF
G
a
10
8
6
4
2
0
20
16
12
4
8
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 1 V
f = 2 GHz
G
a
NF
10
8
6
4
2
0
20
16
12
4
8
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 1 V
f = 1.5 GHz
G
a
NF
6
5
3
2
1
4
0
18
15
12
9
6
3
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 1 V
f = 1 GHz G
a
NF
6
5
3
2
1
4
0
18
15
12
9
6
3
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 1 V
f = 1.5 GHz
G
a
NF
6
5
3
2
1
4
0
18
15
12
9
6
3
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 1 V
f = 2 GHz
G
a
NF
Remark The graphs indicate nominal characteristics.
A Business Partner of Renesas Electronics Corporation.
μ
PA862TD
81 fo 51 egaP 00.2.veR 0020JE2300SD90R
Dec 19, 2011
2Q 1Q
10
8
6
4
2
0
20
16
12
4
8
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 2 V
f = 1 GHz
NF
G
a
10
8
6
4
2
0
20
16
12
4
8
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 2 V
f = 2 GHz
NF
G
a
10
8
6
4
2
0
20
16
12
4
8
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 2 V
f = 1.5 GHz
NF
G
a
6
5
3
2
1
4
0
18
15
12
9
6
3
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 2 V
f = 1 GHz G
a
NF
6
5
3
2
1
4
0
18
15
12
9
6
3
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 2 V
f = 1.5 GHz
G
a
NF
6
5
3
2
1
4
0
18
15
12
9
6
3
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 2 V
f = 2 GHz
G
a
NF
Remark The graphs indicate nominal characteristics.
A Business Partner of Renesas Electronics Corporation.
μ
PA862TD
81 fo 61 egaP 00.2.veR 0020JE2300SD90R
Dec 19, 2011
1Q
10
8
6
4
2
0
20
16
12
4
8
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 3 V
f = 2 GHz
NF
G
a
10
8
6
4
2
0
20
16
12
4
8
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 3 V
f = 1.5 GHz
NF
G
a
10
8
6
4
2
0
20
16
12
4
8
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 3 V
f = 1 GHz
NF
G
a
Remark The graphs indicate nominal characteristics.
A Business Partner of Renesas Electronics Corporation.
μ
PA862TD
81 fo 71 egaP 00.2.veR 0020JE2300SD90R
Dec 19, 2011
S-PARAMETERS
S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import of the
parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www2.renesas.com/microwave/en/download.html
A Business Partner of Renesas Electronics Corporation.
μ
PA862TD
81 fo 81 egaP 00.2.veR 0020JE2300SD90R
Dec 19, 2011
PACKAGE DIMENSIONS
6-PIN LEAD-LESS MINIMOLD (1208) (UNIT: mm)
0.5±0.05
0.125+0.1
–0.05
0.40.4
0.8
0.15±0.05
1.2+0.07
–0.05
0.8+0.07
–0.05
1.0±0.05
123
654
vY
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
(Top View)
C1
E1
C2
B1
E2
B2
1
2
3
6
5
4
Q1
Q2
(Bottom View)
0.60.2
0.1
<R>
A Business Partner of Renesas Electronics Corporation.
