N AMER PHILIPS/DISCRETE BSE D MM 6653931 0026579 410 MMAPX Philips Semiconductors Maintenance type - not for new designs Avalanche fast soft-recovery ; rectifier diodes BYD34 series DESCRIPTION QUICK REFERENCE DATA Glass passivated rectifier diodes in SYMBOL PARAMETER MAX. | UNIT hermetically sealed axial-leaded ID Ve continuous reverse voltage (implosion diode) glass envelopes. BYD34D 200 V They are intended for television and industrial applications, such as BYD34G 400 Vv Switched Mode Power Supplies BYD34) 600 V (SMPS), scan rectifiers in TV BYD34K 800 Vv receivers and also for use in inverter BYD34M 1000 Vv and converter applications. The devices feature non-snap-off Varm repetitive peak reverse voltage (soft-recovery) switching BYD34D 200 Vv characteristics and are capable of BYD34G 400 Vv absorbing reverse transient energy BYD34J 600 y, (e.g. during flashover in a picture tube). BYD34K 800 Vv BYD34M 1000 Vv Tray average forward current 1.8 A lem non-repetitive peak forward current BYD34D, G and J 45 A BYD34K and M 35 A Easa non-repetitive peak reverse energy 10 mJ ty reverse recovery time BYD34D, G and J 250 ns BYD34K and M 300 ns a k MSB024 MBBI68 Fig.1 Simplified outline (SOD84) and symbol. October 1991 563N AMER PHILIPS/DISCRETE Philips Semiconductors BIE D MM 6653931 0026580 132 MMAPX Maintenance type - not for new designs Avalanche fast soft-recovery te as BYD34 series rectifier diodes LIMITING VALUES in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. | UNIT Veen repetitive peak reverse voltage BYD34D - 200 v BYD34G ~ 400 Vv BYD34J - 600 Vv BYD34K - 800 Vv BYD34M - 1000 Vv Vp continuous reverse voltage BYD34D - 200 Vv BYD34G - 400 Vv BYD34J - 600 Vv BYD34K - 800 Vv BYD34M - 1000 Vv levavy average forward current averaged over any 20 ms ~ 1.8 A period; Tp = 55 C; lead length = 10 mm averaged over any 20 ms - 1 A period; Tamb = 60 C; see Fig.2 Ira repetitive peak forward current Tp = 55 C; see Fig.12 - 17 A Tamb = 60 C; see Fig.13 - 9 A les non-repetitive peak forward current t= 10 ms half sine-wave; T; = T; max Prior to surge; Ve = VaRM max BYD34D, G and J - 45 A BYD34K and M - 35 A Esa non-repetitive peak reverse avalanche Iz = 400 mA; - 10 mJ energy T; = T; max Prior to surge; with inductive load switched off Tag storage temperature range -65 175 C T; junction temperature - 175 C October 1991 564MM 6653931 0026581 079 BAPX Philips Semiconauctors Maintenance type - not for new designs Avalanche fast soft-recovery . te gs BYD34 series rectifier diodes N AMER PHILIPS/DISCRETE BIE D THERMAL RESISTANCE THERMAL SYMBOL PARAMETER CONDITIONS RESISTANCE Pn jap from junction to tiepoint lead length 10 mm 50 KV Pin ja from junction to ambient note 1 105 KAW Note 1. Device mounted on an epoxy-glass printed circuit board, 1.5 mm thick; thickness of copper < 40 um, see Fig.2. +__ 5Q _> + 25 > ! ri _ + --+ 50 LL ole 2 _ oe 7272733 Fig.2 Device mounted on a printed circuit board. October 1991 565Philips Semicondu MH 6653931 0026582 TOS MAPX Maintenance type - not for new designs Avalanche fast soft-recovery te as BYD34 series rectifier diodes N AMER PHILIPS/DISCRETE bE D CHARACTERISTICS T, = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. | UNIT Ve forward voltage IF=3A; - 1.2 Vv T= Tj max note 1 p=3A; - 1.4 Vv note 1 Vere reverse avalanche breakdown voltage Ip = 0.1 mA BYD34D 300 - Vv BYD34G 500 - Vv BYD34J 700 - Vv BYD34K 900 - Vv BYD34M 1100 - Vv lp reverse current Va = Venn max - 1 HA note 2 Va = Varnm max? ~ 150 pA T, = 165 C; note 2 t reverse recovery time switched from I; = 1 Ato V, > 30 V; with dl,/dt = 20 A/is BYD34D, G and J - 250 ns BYD34K and M - 300 ns Q, reverse recovery (recovered charge) switched from |, = 1 Ato V_ > 30 V; with -di,/dt = 20 Avs BYD34D, G and J - 250 jnc BYD34K and M - 400 nc Idl,/atl maximum slope of reverse recovery switched from |, = 1 Ato current Vp > 30 V; with BYD34D, Gand J ~di/dt = 1 Ajus - 6 Alus BYD34K and M - 5 Alus Notes 1. Measured under pulse conditions to avoid excessive dissipation. 2. Illuminance < 500 lux (daylight); relative humidity < 65%. October 1991Philips Semiconductc MB 6653931 0026583 941 MBAPX aintenance type - not for new designs Avalanche fast soft-recovery BYD34 series rectifier diodes N AMER PHILIPS/DISCRETE BIE D 'r dip /dt 72230771 ler t } t 10% Qs ! dip/dt 'p T)= 175C Ve 7 | 4 Ve t t Vv O 0.4 0.8 1.2 1.6 2 R 7282613 Ve (V) Fig.4 Forward voltage as a function of forward Fig.3 Definitions of t,, Q,, di/dt and dl,/dt. current. MCag85 Ir (av) (A) a= leamsy lea: Va = Vann max: Fig.5 Maximum values of steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current; switched mode application. October 1991 567BSE D MM 6653931 00265484 6888 MBAPX Philips Semiconductors Maintenance type - not for new designs Avalanche fast soft-recovery rectifier diodes BYD34 series N AMER PHILIPS/DISCRETE MCBIBS 2.0 IF (av) (A) lead length = 10mm 1.6 15mm 20mm 1.2 0.8 0.4 5 40 80 120 160 200 Va = Varo max: 9 = 0.5; a= 1.42, Dotted line = ambient temperature, and device mounted as shown in Fig.2. Solid line = tie-point temperature. Fig.6 Maximum average forward current as a function of temperature (including losses due to reverse leakage); switched mode application. 234226 7284226 [dlgrat] (A/ js} 100 |dig/dt| (A/us) 100 80 80 60 60 40 40 20 20 fay 0 0 oO BYD34D, G and J BYD34K and M T, = 25 C. T, = 25C. 10 20 10 20 dip/dt (A/as) dig/dt (A/ust Fig.7 Maximum slope of reverse recovery Fig.8 Maximum slope of reverse recovery current. current. October 1991 568N AMER PHILIPS/DISCRETE BIE D MM 6653931 0026585 714 BMAPX Philips Semiconductors Maintenance type - not for new designs Avalanche fast soft-recovery BYD34 series rectifier diodes 103 7288514 200 'r tA) VR = VRRM 2 10 (c) 100 10-1 1200 0 100 Tj (c) 200 0 400 800 Va (V} Dotted line = Vay; 5 = 0.5; device mounted as shown in Fig.2. Solid line = Va; device mounted as shown in Fig.2. Fig.10 Maximum permissible junction Fig.9 Reverse current as a function of junction temperature as a function of reverse voltage. temperature. MCB9B1 Cq (pF) BYD34D,G,J 1 10 100 1000 Ve (Vv) f = 1 MHz; T, = 25 C. Fig.11 Diode capacitance as a function of reverse voltage, typical values. October 1991 569N AMER PHILIPS/DISCRETE BYE D MM 665393) 0026586 650 MBAPX Philips Semiconductors Maintenance type - not for new designs Avalanche fast soft-recovery rectifier diodes BYD34 series MCB9B2 TERM (A) Qo 10-2 10-1 4 10 102 105 10+ tp {ms) = 50 K/W; Varm during 1 8; the curves include derating for T, ,,, at Vany = 1000 V. } max SatT,, =55 C; R th ftp Fig.12 Maximum repetitive forward current as a function of pulse time and duty factor (8). MCB9B3 1072 107-1 1 10 102 105 104 tp (ms) 5 at Tam = 65 C: An pg = 105 KW; Vapy during 1 5; the curves include derating for T; na, at Van = 1000 V. Fig.13 Maximum repetitive forward current as a function of pulse time and duty factor (8). October 1991 570N AMER PHILIPS/DISCRETE BSE D MM 6653931 002658? 59? MAPX rips oemiconauctors Maintenance type - not for new designs Avalanche fast soft-recovery rectifier diodes BYD34 series PACKAGE OUTLINE pw 5 max >| 1 1 2 28 min bhe 4.3 max 28 min MSA203 Dimensions in mm. The marking band indicates the cathode. Fig.14 SOD84. October 1991 571