LITE ON LITE-ON SEMICONDUCTOR LZP7N65/LZPF7N65 Features * * * * * Avalanche Rugged Technology Rugged Gate Oxide Technology High di/dt Capability Improved Gate Charge Wide Expanded Safe Operating Area TO-220 TO-220F GDS GDS Application D * SMPS * High Power Switching * Monitor BVDSS = 650V RDS(on) = 1.2 Typ = 0.95 ID = 7.0A G S Absolute Maximum Ratings Symbol VDSS ID ( TC = 25C Unless Otherwise Specified) Characteristic Drain-Source Voltage Continuous Drain Current (TC = 25C) LZP7N65 7 7* Continuous Drain Current (TC = 100C) 4.4 4.4* IDM Drain Current-Pulsed VGS Gate-to-Source Voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC = 25C) dv/dt PD TJ, TSTG TL LZPF7N65 650 (1) 28 28* Units V A A 25 V (2) 220 mJ (1) 7 A (1) 16 4.5 -55 to +150 mJ V/ns W W/C C 300 C (3) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for soldering purposes, 1/8" from case for 5-seconds 160 1.28 52 0.42 * Drain current is limited by maxmum junction temperature Thermal Characteristics Symbol RJC (max) Junction-to-Case Characteristic LZP7N65 0.78 LZPF7N65 2.4 Units RCS (typ) Junction-to-Case-to-Sink 0.5 -- C/W RJA (max) Junction-to-Ambient 62.5 62.5 Rev 0. February. 2007 LZP7N65/LZPF7N65 Electrical Characteristics N-CHANNEL (TC = 25C unless otherwise specified) Symbol BVDSS Characteristic Drain-Source Breakdown Voltage Min. 650 Typ. -- Max. -- Units V Test Condition VGS = 0V, ID = 250A BVDSS/TJ Breakdown Voltage Temp. Coeff. -- 0.55 -- V/C ID = 250A V IGSS IDSS RDS(on) Gate Threshold Voltage 3.0 -- 5.0 Gate-Source Leakage, Forward -- -- 100 Gate-Source Leakage, Reverse -- -- -100 -- -- 10 -- -- 100 -- 0.95 1.2 Drain-to-Source Leakage Current Static Drain-Source On-State Resistance gfs Forward Transconductance -- 7.8 -- Ciss Input Capacitance -- 1000 1300 Coss Output Capacitance -- 100 130 Crss Reverse Transfer Capacitance -- 12 16 td(on) Turn-On Delay Time -- 18 46 Rise Time -- 55 120 Turn-Off Delay Time -- 55 120 tr td(off) tf Fall Time -- 45 100 Qg Total Gate Charge -- 23 30 Qgs Gate-Source Charge -- 4.5 -- Qgd Gate-Drain("Miller") Charge -- 10 -- nA A VGS(th) VDS = VGS, ID = 250A VGS = 25V VGS = -25V VDS = 650V VDS = 520V, TC = 125C VGS = 10V, ID = 3.5A (4) VDS = 30V, ID = 3.5A (4) pF VGS = 0V, VDS = 25V, f = 1MHz ns VDD = 325V, ID = 7.0A, (4)(5) RG = 25 nC VDS = 520V, VGS = 10V, (4)(5) ID = 7.0A Source-Drain Diode Ratings and Characteristics Symbol IS Characteristic Continuous Source Current Min. -- Typ. -- Max. 7 A Test Condition Integral reverse pndiode in the MOSFET V IS = 7A, VGS = 0V -- ns -- C IF = 7A, VGS = 0V, dIF / dt = 100A/s ISM Pulsed Source Current (1) -- -- 28 VSD Diode Forward Voltage (4) -- -- 1.4 trr Reverse Recovery Time -- 350 Qrr Reverse Recovery Charge -- 3.1 Notes: (1). Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature (2). L = 8.3mH, IAS = 7A, VDD = 50V, RG = 25 , Starting TJ = 25C (3). ISD 7A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C (4). Pulse Test : Pulse Width 300s, Duty Cycle 2% (5). Essentially Independent of Operating Temperature Rev 0. February. 2007 Units (4) LZP7N65/LZPF7N65 N-CHANNEL Typical Characterisics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V Bottom : 5.0 V Top : 10 1 1 10 ID, Drain Current [A] ID, Drain Current [A] 10 0 o 150 C 0 10 o -55 C o 25 C Notes : 1. 250 s Pulse Test 2. TC = 25 10 Notes : 1. VDS = 30V 2. 250 s Pulse Test -1 -1 10 0 10 10 1 2 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Fig 2. Transfer Characteristics Fig 1. On-Region Characteristics 2.5 IDR, Reverse Drain Current [A] RDS(ON) [ ], Drain-Source On-Resistance 1 2.0 VGS = 10V 1.5 VGS = 20V 1.0 10 0 10 150 25 Notes : 1. VGS = 0V 2. 250 s Pulse Test Note : TJ = 25 0.5 -1 0 5 10 15 10 20 0.2 0.4 Fig 3. On-Resistance Variation vs. Drain Current and Gate Voltage 1600 Ciss 1000 Coss 800 600 Notes ; 1. VGS = 0 V 2. f = 1 MHz 400 Crss 200 1.0 1.2 12 VDS = 130V 10 VGS, Gate-Source Voltage [V] Capacitance [pF] 1200 0.8 Fig 4. Body Diode Forward Voltage Variation vs. Source Current and Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1400 0.6 VSD, Source-Drain voltage [V] ID, Drain Current [A] VDS = 325V VDS = 520V 8 6 4 2 Note : ID = 7A 0 -1 10 0 10 10 1 VDS, Drain-Source Voltage [V] Fig 5. Capacitance Characteristics Rev 0. February. 2007 0 0 5 10 15 20 QG, Total Gate Charge [nC] Fig 6. Gate Charge Characteristics 25 LZP7N65/LZPF7N65 N-CHANNEL Typical Charateristics 3.0 1.1 1.0 Notes : 1. VGS = 0 V 2. ID = 250 A 0.9 0.8 -100 -50 0 50 100 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 150 2.0 1.5 1.0 0.0 -100 200 o 2 100 us 1 Operation in This Area is Limited by R DS(on) ID, Drain Current [A] ID, Drain Current [A] 200 10 us 100 us 10 1 ms 10 ms 100 ms 0 DC 10 Notes : -1 1 ms 10 ms DC 10 o 1. TC = 25 C 100 ms 0 10 Notes : -1 o 1. TC = 25 C o o 2. TJ = 150 C 3. Single Pulse 2. TJ = 150 C 3. Single Pulse -2 0 1 2 10 10 10 3 VDS, Drain-Source Voltage [V] 8 7 6 5 4 3 2 1 50 75 100 125 T C, Case Temperature [] Fig 10. Maximum Drain Current vs. Case Temperature Rev 0. February. 2007 10 -2 10 0 1 10 2 10 10 VDS, Drain-Source Voltage [V] Fig 9-1. Maximum Safe Operating Area for LZP7N65 ID, Drain Current [A] 150 1 10 25 100 2 10 Operation in This Area is Limited by R DS(on) 0 50 Fig 8. On-Resistance Variation vs. Temperature 10 10 0 TJ, Junction Temperature [ C] Fig 7. Breakdown Voltage Variation vs. Temperature 10 -50 o TJ, Junction Temperature [ C] 10 Notes : 1. VGS = 10 V 2. ID = 3.5 A 0.5 150 Fig 9-2. Maximum Safe Operating Area for LZPF7N65 3 LZP7N65/LZPF7N65 N-CHANNEL Typical Characteristics 10 0 Z JC(t), Thermal Response D = 0 .5 0 .2 N o te s : 1 . Z J C(t) = 0 .7 8 /W M a x. 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C(t) 0 .1 -1 10 0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e -2 10 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] Figure 11-1. Transient Thermal Response Curve for LZP7N65 D = 0 .5 Z JC(t), Thermal Response 10 0 0 .2 N o te s : 1 . Z J C( t) = 2 .4 /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C( t) 0 .1 0 .0 5 10 -1 0 .0 2 0 .0 1 10 s in g le p u ls e -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] Figure 11-2. Transient Thermal Response Curvefor LZPF7N65 Rev 0. February. 2007 LZP7N65/LZPF7N65 N-CHANNEL Test Circuit and waveform VDS L IAS BVDSS tP VDD RG DUT IAS VGS VDD 0V tP 0 tAV Time Unclamped Energy Waveforms Unclamped Energy Test Circuit tOFF tON td(off) td(on) tf tr RL VDS 90% 90% VDD RG DUT 10% 0 10% VGS 90% VGS 0 Switching Time Test Circuit 10% Resistive Switching Waveforms VDS RL VDS VGS Qg(TOTAL) Qgs VGS Qgd VGS=10V VDD DUT Ig 0 Gate Charge Test Circuit Rev 0. February. 2007 Ig Gate Charge Waveforms LZP7N65/LZPF7N65 N-CHANNEL VDS LLoad ISD VDD Driver RG Same Device as DUT VGS VGS 10V IFM, Body Diode Forward Current ISD di/dt IRM Body Diode Recovery dv/dt VDS VSD VDD Body Diode Recovery dv/dt Test Circuit and Waveform Rev 0. February. 2007 LZP7N65/LZPF7N65 N-CHANNEL Package Dimensions TO-220 . . . . . Rev 0. February. 2007 . LZP7N65/LZPF7N65 N-CHANNEL Package Dimensions TO-220F . 1. . A . . 1. . . Detail : A Scale : 4:1 Rev 0. February. 2007