Rev 0. February. 2007
LZP7N65/LZPF7N65
LITE ON LITE-ON
SEMICONDUCTOR
Features
• Avalanche Rugged Technology
• Rugged Gate Oxide Technology
• High di/dt Capability
• Improved Gate Charge
• Wide Expanded Safe Operating Area
Application
•SMPS
• High Power Switching
•Monitor
BVDSS = 650V
RDS(on) = 1.2Ω
Typ = 0.95Ω
ID = 7.0A
Absolute Maximum Ratings ( TC = 25°C Unless Otherwise Specified)
* Drain current is limited by maxmum junction temperature
Thermal Characteristics
Symbol Characteristic LZP7N65 LZPF7N65 Units
VDSS Drain-Source Voltage 650 V
ID
Continuous Drain Current (TC = 25°C) 77*
A
Continuous Drain Current (TC = 100°C) 4.4 4.4*
IDM Drain Current-Pulsed (1) 28 28* A
VGS Gate-to-Source Voltage ± 25 V
EAS Single Pulsed Avalanche Energy (2) 220 mJ
IAR Avalanche Current (1) 7A
EAR Repetitive Avalanche Energy (1) 16 mJ
dv/dt Peak Diode Recovery dv/dt (3) 4.5 V/ns
PD
Total Power Dissipation (TC = 25°C) 160 52 W
Linear Derating Factor 1.28 0.42 W/°C
TJ, TSTG Operating Junction and Storage Temperature Range -55 to +150 °C
TL
Maximum Lead Temp. for soldering purposes,
1/8" from case for 5-seconds 300 °C
Symbol Characteristic LZP7N65 LZPF7N65 Units
RθJC (max) Junction-to-Case 0.78 2.4
°C/W
RθCS (typ) Junction-to-Case-to-Sink 0.5 --
RθJA (max) Junction-to-Ambient 62.5 62.5
G
S
D
TO-220FTO-220
GDSGDS
Rev 0. February. 2007
LZP7N65/LZPF7N65
N-CHANNEL
Electrical Characteristics (TC = 25°C unless otherwise specified)
Notes:
(1). Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
(2). L = 8.3mH, IAS = 7A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
(3). ISD ≤ 7A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
(4). Pulse Test : Pulse Width ≤300µs, Duty Cycle ≤2%
(5). Essentially Independent of Operating Temperature
Symbol Characteristic Min. Typ. Max. Units Test Condition
BVDSS Drain-Source Breakdown Voltage 650 -- -- V VGS = 0V, ID = 250µA
∆BVDSS/∆TJBreakdown Voltage Temp. Coeff. -- 0.55 -- V/°C ID = 250µA
VGS(th) Gate Threshold Voltage 3.0 -- 5.0 V VDS = VGS, ID = 250µA
IGSS
Gate-Source Leakage, Forward -- -- 100 nA VGS = 25V
Gate-Source Leakage, Reverse -- -- -100 VGS = -25V
IDSS Drain-to-Source Leakage Current -- -- 10 µAVDS = 650V
-- -- 100 VDS = 520V, TC = 125°C
RDS(on) Static Drain-Source
On-State Resistance -- 0.95 1.2 ΩVGS = 10V, ID = 3.5A
(4)
gfs Forward Transconductance -- 7.8 --
Ω
VDS = 30V, ID = 3.5A
(4)
Ciss Input Capacitance -- 1000 1300
pF VGS = 0V, VDS = 25V,
f = 1MHz
Coss Output Capacitance -- 100 130
Crss Reverse Transfer Capacitance -- 12 16
td(on) Turn-On Delay Time -- 18 46
ns VDD = 325V, ID = 7.0A,
RG = 25Ω (4)(5)
trRise Time -- 55 120
td(off) Turn-Off Delay Time -- 55 120
tfFall Time -- 45 100
QgTotal Gate Charge -- 23 30
nC VDS = 520V, VGS = 10V,
ID = 7.0A (4)(5)
Qgs Gate-Source Charge -- 4.5 --
Qgd Gate-Drain(“Miller”) Charge -- 10 --
Source-Drain Diode Ratings and Characteristics
Symbol Characteristic Min. Typ. Max. Units Test Condition
ISContinuous Source Current -- -- 7 A
Integral reverse pn-
diode in the MOSFET
ISM Pulsed Source Current (1) -- -- 28
VSD Diode Forward Voltage (4) -- -- 1.4 V IS = 7A, VGS = 0V
trr Reverse Recovery Time -- 350 -- ns IF = 7A, VGS = 0V,
dIF / dt = 100A/µs (4)
Qrr Reverse Recovery Charge -- 3.1 -- µC
N-CHANNEL
Rev 0. February. 2007
LZP7N65/LZPF7N65
Typical Characterisics
100101
10-1
100
101
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
Bottom : 5.0 V
Notes :※
1. 250µ s Pulse Test
2. TC = 25℃
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
246810
10-1
100
101
VGS, Gate-Source Voltage [V]
150oC
25oC-55oC
Notes :※
1. VDS = 30V
2. 250µ s Pulse Test
ID, Drain Current [A]
Fig 1. On-Region Characteristics Fig 2. Transfer Characteristics
0 5 10 15 20
0.5
1.0
1.5
2.0
2.5
VGS = 20V
VGS = 10V
Note : T※J = 25℃
RDS(ON) [Ω],
Drain-Source On-Resistance
ID, Drain Current [A]
0.2 0.4 0.6 0.8 1.0 1.2
10-1
100
101
150℃
Notes :※
1. VGS = 0V
2. 250µ s Pulse Test
25℃
IDR, Reverse Drain Current [A]
VSD, Source-Drain voltage [V]
Fig 3. On-Resistance Variation vs. Drain
Current and Gate Voltage
Fig 4. Body Diode Forward Voltage
Variation vs. Source Current and
10-1 100101
0
200
400
600
800
1000
1200
1400
1600
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Notes ;※
1. VGS = 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Capacitance [pF]
VDS, Drain-Source Voltage [V]
0 5 10 15 20 25
0
2
4
6
8
10
12
VDS = 325V
VDS = 130V
VDS = 520V
Note : I※D = 7A
VGS, Gate-Source Voltage [V]
QG, Total Gate Charge [nC]
Fig 5. Capacitance Characteristics Fig 6. Gate Charge Characteristics
N-CHANNEL
Rev 0. February. 2007
LZP7N65/LZPF7N65
Typical Charateristics
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
Notes :※
1. VGS = 0 V
2. ID = 250 µ A
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
TJ, Junction Temperature [oC]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :※
1. VGS = 10 V
2. ID = 3.5 A
RDS(ON), (Normalized)
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
Fig 7. Breakdown Voltage Variation
vs. Temperature
Fig 8. On-Resistance Variation
vs. Temperature
100101102103
10-2
10-1
100
101
102
100 us
100 ms
DC
10 ms
1 ms
Operation in This Area
is Limited by R DS(on)
Notes :※
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
100101102103
10-2
10-1
100
101
102
10 us
100 us
100 ms
DC
10 ms
1 ms
Operation in This Area
is Limited by R DS(on)
Notes :※
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
Fig 9-1. Maximum Safe Operating Area
for LZP7N65
Fig 9-2. Maximum Safe Operating Area
for LZPF7N65
25 50 75 100 125 150
0
1
2
3
4
5
6
7
8
ID, Drain Current [A]
TC, Case Temperature [ ]℃
Fig 10. Maximum Drain Current
vs. Case Temperature
Rev 0. February. 2007
LZP7N65/LZPF7N65
N-CHANNEL
Typical Characteristics
Figure 11-2. Transient Thermal Response Curvefor LZPF7N65
Figure 11-1. Transient Thermal Response Curve for LZP7N65
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1
100
N o te s :※
1. ZθJC
(t) = 0.78 /W Max.℃
2. D uty Factor, D =t1/t2
3. TJM - TC = PDM * Z θJC
(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
ZθJC
(t), Thermal Response
t1, Square W ave P ulse D uration [sec]
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1
100
N otes :※
1. Z θJC
(t) = 2.4 /W M ax.℃
2. D uty Fa c to r, D = t1/t2
3. T JM - T C = PDM * Z θJC
(t)
sin g le p u ls e
D=0.5
0.02
0.2
0.05
0.1
0.01
ZθJC
(t), Thermal Response
t1, S q u a re W ave P ulse D uration [s e c]
RL
VDD
VDS
VGS
DUT
Ig
VGS
Ig
VDS
Qgs Qgd
Qg(TOTAL)
VGS=10V
0
Unclamped Energy Test Circuit Unclamped Energy Waveforms
Switching Time Test Circuit Resistive Switching Waveforms
VGS
VDD
RGDUT
RL
VDS
td(on)
tr
tON
td(off)
tf
tOFF
VGS
0
90%
90% 90%
10%
10%
0
10%
VGS
tP
0V
L
VDD
RG
VDS
Time
BVDSS
IAS
VDD
tAV
tP
DUT
0
IAS
N-CHANNEL
Rev 0. February. 2007
LZP7N65/LZPF7N65
Test Circuit and waveform
Gate Charge Test Circuit Gate Charge Waveforms
N-CHANNEL
Rev 0. February. 2007
LZP7N65/LZPF7N65
Body Diode Recovery dv/dt Test Circuit and Waveform
LLoad
RG
Same Device
as DUT
ISD
VGS
VDS
ISD
VGS
VDD
10V
VSD
IRM
IFM, Body Diode Forward Current
di/dt
VDD
Driver
VDS
Body Diode Recovery dv/dt
N-CHANNEL
Rev 0. February. 2007
LZP7N65/LZPF7N65
Package Dimensions
TO-220
..
.
.
.
.
N-CHANNEL
Rev 0. February. 2007
LZP7N65/LZPF7N65
TO-220F
Package Dimensions
..
1.
..
.
1.
.
Detail : A
Scale : 4:1
A
