1
Motorola TMOS Power MOSFET Transistor Device Data
Medium Power Surface Mount Products
WaveFET devices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process. These
miniature surface mount MOSFETs feature ultra low R DS(on) and true
logic level performance. They are capable of withstanding high energy in
the av alanche and commutation modes and the drain–to–source diode
has a very low reverse recovery time. WaveFET devices are designed
for use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc–dc converters, and
power management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be
used for low voltage motor controls in mass storage products such as
disk drives and tape drives. The avalanche energy is specified to
eliminate the guesswork in des igns where induc tive loads are switched
and offer additional safety margin against unexpected voltage transients.
•Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
•Logic Level Gate Drive — Can Be Driven by Logic ICs
•Miniature SO–8 Surface Mount Package — Saves Board Space
•Diode Is Characterized for Use In Bridge Circuits
•Diode Exhibits High Speed, With Soft Recovery
•IDSS Specified at Elevated Temperature
•Avalanche Energy Specified
•Mounting Information for SO–8 Package Provided
DEVICE MARKING ORDERING INFORMATION
S3305
Device Reel Size Tape W idth Quantity
S3305
MMSF3305R2 13″12 mm embossed tape 4000 units
Preferred devices are Motorola recommended choices for future use and best overall value.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
HDTMOS and W aveFET are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Order this document
by MMSF3305/D
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1997
CASE 751–05, Style 13
SO–8
SINGLE TMOS
POWER MOSFET
9.1 AMPERES
30 VOLTS
RDS(on) = 0.02 OHM
Motorola Preferred Device
Source 1
2
3
4
8
7
6
5
Top View
Source
Source
Gate
Drain
Drain
Drain
Drain
D
S
G
MMSF3305
2Motorola TMOS Power MOSFET Transistor Device Data
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Negative sign for P–Channel devices omitted for clarity
Rating Symbol Max Unit
Drain–to–Source V oltage VDSS 30 V
Drain–to–Gate V oltage (RGS = 1.0 MΩ) VDGR 20 V
Gate–to–Source Voltage — Continuous VGS ±20 V
1 inch SQ.
FR–4 or G–10 PCB
10 seconds
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current — Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (1)
RTHJA
PD
ID
ID
IDM
50
2.5
20
9.1
7.3
50
°C/W
Watts
mW/°C
A
A
A
Minimum
FR–4 or G–10 PCB
10 seconds
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current — Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (1)
RTHJA
PD
ID
ID
IDM
80
1.56
12.5
7.2
5.8
40
°C/W
Watts
mW/°C
A
A
A
Operating and Storage Temperature Range TJ, Tstg – 55 to 150 °C
Single Pulse Drain–to–Source A valanche Energy — Starting T J = 25°C
(VDD = 30 Vdc, VGS = 10 Vdc, Peak IL = 9.1 Apk, L = TBD mH, RG = 25
W
)EAS TBD mJ
(1) Repetitive rating; pulse width limited by maximum junction temperature.
MMSF3305
3
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage (1) (3)
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coef ficient (Positive)
V(BR)DSS 30
——
——
—
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 15 Vdc, VGS = 0 Vdc, TJ = 70°C)
IDSS —
——
—1.0
5.0
µAdc
Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0) IGSS — — 100 nAdc
ON CHARACTERISTICS(1)
Gate Threshold Voltage (1) (3)
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coef ficient (Negative)
VGS(th) 0.7
——
—1.4
—
Vdc
mV/°C
Static Drain–to–Source On–Resistance (1) (3)
(VGS = 10 Vdc, ID = 9.1 Adc)
(VGS = 4.5 Vdc, ID = 7.3 Adc)
RDS(on) —
——
—20
30
mΩ
On–State Drain Current
(VDS ≤ 5.0 V, VGS = 10 V)
(VDS ≤ 5.0 V, VGS = 4.5 V)
ID(on) 40
10 —
——
—
A
Forward T ransconductance (VDS = 15 Vdc, ID = 8.0 Adc) (1) gFS ———Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V 30 Vdc V 0 Vdc
Ciss — — TBD pF
Output Capacitance (VDS = 30 Vdc, VGS = 0 Vdc,
f = 1.0 MHz
)
Coss — — TBD
T ransfer Capacitance
f
=
1
.
0
MHz)
Crss — — TBD
SWITCHING CHARACTERISTICS(2)
T urn–On Delay Time
(V 15 Vd I 1 0 Ad
td(on) — — TBD ns
Rise T ime (VDD = 15 Vdc, ID = 1.0 Adc,
VGS =10Vdc
tr— — TBD
T urn–Off Delay Time
V
GS =
10
Vd
c,
RG = 6.0 Ω) (1) td(off) — — TBD
Fall T ime
G)( )
tf— — TBD
Gate Charge
See Figure 8
(V 15 Vd I 4 6 Ad
QT— — TBD nC
See Figure 8 (VDS = 15 Vdc, ID = 4.6 Adc, Q1———
(DS ,D,
VGS = 10 Vdc) (1) Q2———
Q3———
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage(1) (IS = 2.1 Adc, VGS = 0 Vdc) (1)
(IS = 2.1 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD —
——
—1.2
—
Vdc
Reverse Recovery Time
See Figure 15
(I 2 1 Ad V 0 Vd
trr — — TBD ns
See Figure 15 (IS = 2.1 Adc, VGS = 0 Vdc, ta———
(S,GS ,
dIS/dt = 100 A/µs) (1) tb———
Reverse Recovery Stored Charge QRR ———µC
(1) Pulse Test: Pulse Width ≤300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values. Cpk = Max limit – Typ
3 x SIGMA
(4) Repetitive rating; pulse width limited by maximum junction temperature.
MMSF3305
4Motorola TMOS Power MOSFET Transistor Device Data
PACKAGE DIMENSIONS
STYLE 13:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
6. DRAIN
7. DRAIN
8. DRAIN
CASE 751–05
SO–8
ISSUE P
SEATING
PLANE
14
58
C
K
4X P
A0.25 (0.010) MTBSS
0.25 (0.010) MBM
8X D
R
M
J
X 45
_
_
F
–A–
–B–
–T–
DIM MIN MAX
MILLIMETERS
A4.80 5.00
B3.80 4.00
C1.35 1.75
D0.35 0.49
F0.40 1.25
G1.27 BSC
J0.18 0.25
K0.10 0.25
M0 7
P5.80 6.20
R0.25 0.50
__
G
NOTES:
1. DIMENSIONS A AND B ARE DATUMS AND T IS A
DATUM SURFACE.
2. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
3. DIMENSIONS ARE IN MILLIMETER.
4. DIMENSION A AND B DO NOT INCLUDE MOLD
PROTRUSION.
5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
6. DIMENSION D DOES NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS
OF THE D DIMENSION AT MAXIMUM MATERIAL
CONDITION.
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Af firmative Action Employer.
Mfax is a trademark of Motorola, Inc.
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MMSF3305/D
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