5238534 KNOX SEMICONDUCTOR INC 99D 00133 D T-/(-07 Low Voltage Avalanche Zener Diodes HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE q DE ff se3asay go001a3 2 Type Nominal Test Max Zener Max ReverseLeakage Max Noise Max Regulation Max Reverse Max Temp. Number Zener Current Impedance Current Density at Factor (Note 5) Regulator Surge Coefficient (Note 1) Voltage lzt (Note 2) Ir Vr (Note 4) AVz Izu Current Current (25 to 125 C) Vz @ Izt 221 @ lat (Note 3) Iz = 250A lzm Ir (Note 6} (volts) (mA) (ohms) (Adc) (Volts) (NDuV/VHz) (Volts) (mAdc) (mAdc) {mA) (%/ C} A 1N5518 3.3 20 26 5.0 0.9 0.5 0.90 2.0 115 1800 -.07 A _1N5519 3.6 20 24 3.0 09 0.5 0.90 2.0 105 1650 -.065 These A 1N5520 3.9 20 22 1.0 09 05 0.85 2.0 98 1500 -.060 low voltage A_1N5524 4.3 20 18 3.0 1.0 0.5 0.75 2.0 88 1400 -,055 +.020 8 A 1N5522 4.7 10 22 2.0 15 0.5 0.60 1.0 81 1270 ~,043 +.025 avalanche zener A_1N5523 5.1 5 26 2.0 2.0 0.5 0.65 0.25 75 1170 -.030 +.030 diod , A 1N5524 5.6 3 30 2.0 3.0 1.0 0.30 0.25 68 4080 ~.030 +.045 iodes are specif- A_1N5525 6.2 1 30 1.0 45 1.0 0.20 0.01 61 965 050 ically designed A 1N5526 68 1 30 1.0 55 1.0 0.10 0.01 56 870 052 1 tl A_1N5527 75 1 35 0.5 6.0 2.0 0.05 0.01 Bt 810 058 for low current, low A 1N5528 8.2 1 40 0.5 65 4.0 0.05 0.01 46 740 062 noise applications. The A_1N5529 9.1 1 45 0.1 7.0 4.0 0.05 0.01 42 650 .068 } k ] A 1N5530. 10.0 1 60 0.05 8.0 4.0 0.10 0.01 38 600 075 very snarp Kiees, tow A_1N5531 11.0 1 80 0.05 9.0 5.0 * 0.20 0.01 35 540 075 leakages, and low A 1N5532 12.0 1 90 0.05 95 10 0.20 0.01 32 500 080 : TiNS533_13.0 i 90 0.01 105 15 0.20 0.01 29 470 080 impedances at low 0 1N5534 14.0 1 100 0.01 11.5 20 0.20 0.01 27 850 .082 currents make them ideal O_1N5535 15.0 1 100 0.01 12.5 20 0.20 0.01 25 800 082 It lati 0 iNs536.~~+16.0 1 100 0.01 13.0 20 0.20 0.01 24 750 083 for voltage regulation. 0 _1N5S37 17.0 1 100 0.01 14.0 20 0.20 0.01 22 700 .085 They are planar devices, D 1N5538 18.0 1 100 0.01 15.0 20 0.20 0.01 21 665 085 h ticall led in th O 1N5539_ 19.0 i 400 0.01 18.0 20 0.20 0.01 20 630 086 ermetically seated in ine 1 1N5540 20.0 i +00 0.01 17.0 20 0.20 0.01 19 600 .086 popular DO-7 glass 0 4N8541 22.0 1 100 0.01 18.0 20 0.25 0.01 17 544 .087 k . O 1nss42 24.0 1 100 0.01. 20.0 20 0.30 0.01 16 511 088 package to insure C1 1N5543 25.0 1 100 0.01 21.0 20 0.35 0.01 15 481 .090 reliability. Also available O 1N5544 28.0 i 100 0.01 23.0 20 0.40 0.01 14 431 091 in di O) 1N5545 30.0 i 4100 0.01 24.0 20 0.45 0.01 13 400 094 in die form. DO 1N5546 33.0 1 100 0.01 28.0 20 0.50 0.01 12 360 092 1NG6082 43 20 18 2.0 15 1.0 0.75 2.0 81 930 -.055 +.020 14N6083 47 10 10 2.0 2.0 1.0 0.50 1.0 7 980 -.043 +.025 iN6084 5.1 5 10 2.0 3.0 1.0 0.30 0.25 72 960 ~.030 +.030 1N6085 5.6 1 40 2.0 45 1.0 0.10 0.05 65 950 .040 4NG086 62 1 45 05 5.6 1.0 0.10 0.01 59 910 .050 1N6087 6.8 1 50 0.05 6.2 1.0 0.10 0.01 53 870 .060 4N6088 75 1 50 0.01 68 1.0 0.10 0.01 47 810 064 1N6089 8.2 1 60 0.01 75 1.0 0.10 0.01 44 740 .067 1N6090 94 1 60 0.01 8.2 2.0 0.10 0.01 37 650 .070 4N6091 10.0 1 60 0.04 9.4 2.0 0.10 0.01 35 540 .075 NOTES: . Suffix denotes Vz tolerance: none for + 20 %, A fort 10%, Bfort 5%, C fort 2%, D fort 1%. . Measured with 10 %, 60 Hz AC superimposed on Izt. . Measured at Vr as shown in the table. . Measured from 1000 to 3000 Hz. . Difference between Vz at Izt and IzL. . Peak current superimposed on Izt; device will withstand a total of five surges at one minute intervals, each surge being a '/, square wave pulse of 8.0 msec duration or an equivalent '/, sinewave with the same effective rms current. Omron NOTES: All types + 5% tolerance, A Denotes military approval. O Denotes military approval in process. PAGE 7