IXTA2N100 IXTP2N100 High Voltage MOSFET VDSS ID25 RDS(on) = 1000V = 2A 7 N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C, RGS = 1M 1000 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 2 A IDM TC = 25C, Pulse Width Limited by TJM 8 A IA EAS TC = 25C TC = 25C 2 150 A mJ dV/dt IS IDM, VDD VDSS, TJ 150C 5 V/ns PD TC = 25C 100 W - 55 ... +150 150 - 55 ... +150 C C C TJ TJM Tstg (TAB) TO-220 (IXTP) G z 300 C TSOLD Plastic Body for 10s 260 C z Md Mounting Torque 1.13 / 10 Nm/lb.in. z Weight TO-263 TO-220 2.5 3.0 g g z z z Applications V z VGS = 0V, ID = 250A 1000 VGS(th) VDS = VGS, ID = 250A 2.0 IGSS VGS = 20V, VDS = 0V 100 nA IDSS VDS = VDSS, VGS = 0V 25 100 A RDS(on) VGS = 10V, ID = 0.5 * ID25, Note 1 7 TJ = 125C Easy to Mount Space Savings High Power Density V BVDSS 4.5 International Standard Packages Avalanche Rated Low Package Inductance (< 5nH) Fast Switching Times Advantages z Characteristic Values Min. Typ. Max. D = Drain TAB = Drain Features 1.6mm (0.062) from Case for 10s Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) (TAB) D S G = Gate S = Source TL (TO-220) S z z Switched-Mode and Resonant-Mode Power Supplies FlyBack Inverters DC Choppers DS97540B(04/09) (c) 2009 IXYS CORPORATION, All Rights Reserved http://store.iiic.cc/ IXTA2N100 IXTP2N100 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 0.5 * ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz td(on) tr td(off) tf Characteristic Values Min. Typ. Max. 1.5 TO-220 (IXTP) Outline 2.5 S 825 58 15 pF pF pF Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 20 (External) 20 23 34 21 ns ns ns ns Qg(on) Qgs Qgd VGS= 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 18.0 3.7 8.2 nC nC nC RthJC RthCS (TO-220) 0.50 1.25 C/W C/W Pins: 1 - Gate 2 - Drain Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 2 A ISM Repetitive, pulse width limited by TJM 8 A VSD IF = 2A, VGS = 0V, Note 1 1.5 V trr IF = 2A, -di/dt = 100A/s, VR = 100V 800 ns TO-263 (IXTA) Outline Note 1: Pulse Test, t 300 s; Duty Cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 http://store.iiic.cc/ 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA2N100 IXTP2N100 Fig. 1. Output Characteristics @ 25C Fig. 2. Extended Output Characteristics @ 25C 2.0 4.5 VGS = 10V 8V 7V 1.8 1.6 3.5 6V 1.2 ID - Amperes 1.4 ID - Amperes VGS = 10V 8V 7V 4.0 5V 1.0 0.8 3.0 6V 2.5 2.0 1.5 0.6 0.4 1.0 0.2 0.5 0.0 5V 0.0 0 1 2 3 4 5 6 7 8 9 10 11 12 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 1A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125C 2.0 3.0 VGS = 10V 6V 1.8 2.8 VGS = 10V 2.6 ID - Amperes 1.4 RDS(on) - Normalized 1.6 5V 1.2 1.0 0.8 0.6 2.4 2.2 I D = 2A 2.0 I D = 1A 1.8 1.6 1.4 1.2 1.0 0.4 0.8 0.2 0.6 0.0 0.4 0 2 4 6 8 10 12 14 16 18 20 22 24 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 1A Value vs. Drain Current 50 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 2.2 2.8 2.0 VGS = 10V 2.6 1.8 TJ = 125C 2.4 1.6 2.2 ID - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade 2.0 1.8 1.6 1.4 1.4 1.2 1.0 0.8 0.6 1.2 0.4 TJ = 25C 1.0 0.2 0.0 0.8 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -50 ID - Amperes -25 0 25 50 75 TC - Degrees Centigrade (c) 2009 IXYS CORPORATION, All Rights Reserved http://store.iiic.cc/ 100 125 150 IXTA2N100 IXTP2N100 Fig. 7. Input Admittance Fig. 8. Transconductance 6.0 3.5 5.5 3.0 4.5 g f s - Siemens 2.5 ID - Amperes TJ = - 40C 5.0 TJ = 125C 25C - 40C 2.0 1.5 1.0 4.0 25C 3.5 125C 3.0 2.5 2.0 1.5 1.0 0.5 0.5 0.0 0.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0.0 6.0 0.5 1.0 1.5 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 2.5 3.0 3.5 Fig. 10. Gate Charge 10 7 VDS = 500V 9 I D = 1A 6 8 5 I G = 10mA 7 VGS - Volts IS - Amperes 2.0 ID - Amperes 4 3 TJ = 125C 6 5 4 3 2 TJ = 25C 2 1 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0 0.9 2 4 VSD - Volts 6 8 10 12 14 16 18 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 10,000 10.00 Ciss 1,000 Z(th)JC - C / W Capacitance - PicoFarads f = 1 MHz Coss 100 1.00 0.10 Crss 10 0 5 10 15 20 25 30 35 40 0.01 0.00001 VDS - Volts 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_2N100(3X-G68)4-16-09 http://store.iiic.cc/