© 2009 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 1000 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ1000 V
VGSS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C2A
IDM TC= 25°C, Pulse Width Limited by TJM 8A
IATC= 25°C2A
EAS TC= 25°C 150 mJ
dV/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 5 V/ns
PDTC= 25°C 100 W
TJ- 55 ... +150 °C
TJM 150 °C
Tstg - 55 ... +150 °C
TL1.6mm (0.062) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Torque (TO-220) 1.13 / 10 Nm/lb.in.
Weight TO-263 2.5 g
TO-220 3.0 g
DS97540B(04/09)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 1000 V
VGS(th) VDS = VGS, ID = 250μA 2.0 4.5 V
IGSS VGS = ±20V, VDS = 0V ±100 nA
IDSS VDS = VDSS, VGS = 0V 25 μA
TJ = 125°C 100 μΑ
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 7 Ω
High Voltage
MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA2N100
IXTP2N100
VDSS = 1000V
ID25 = 2A
RDS(on) ≤≤
≤≤
≤ 7ΩΩ
ΩΩ
Ω
Features
zInternational Standard Packages
zAvalanche Rated
zLow Package Inductance (< 5nH)
zFast Switching Times
Advantages
zEasy to Mount
zSpace Savings
zHigh Power Density
Applications
zSwitched-Mode and Resonant-Mode
Power Supplies
zFlyBack Inverters
zDC Choppers
G = Gate D = Drain
S = Source TAB = Drain
TO-263 (IXTA)
TO-220 (IXTP)
D(TAB)
G
S
GS
(TAB)
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IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA2N100
IXTP2N100
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 10V, ID = 0.5 • ID25, Note 1 1.5 2.5 S
Ciss 825 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 58 pF
Crss 15 pF
td(on) 20 ns
tr 23 ns
td(off) 34 ns
tf 21 ns
Qg(on) 18.0 nC
Qgs VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 3.7 nC
Qgd 8.2 nC
RthJC 1.25 °C/W
RthCS (TO-220) 0.50 °C/W
Note 1: Pulse Test, t ≤ 300 μs; Duty Cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Pins: 1 - Gate 2 - Drain
TO-220 (IXTP) Outline
TO-263 (IXTA) Outline
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 20Ω (External)
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 2 A
ISM Repetitive, pulse width limited by TJM 8 A
VSD IF = 2A, VGS = 0V, Note 1 1.5 V
trr 800 ns
IF = 2A, -di/dt = 100A/μs, VR = 100V
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© 2009 IXYS CORPORATION, All Rights Reserved
IXTA2N100
IXTP2N100
Fig. 1. Ou tp u t C h aracter isti cs
@ 25ºC
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0123456789101112
V
DS
- Volts
I
D
- A mp ere s
V
GS
= 10V
8V
7V
5
V
6
V
Fig. 2. Extended Output Characteristics
@ 25º C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- A mpe res
V
GS
= 10V
8V
7V
6
V
5
V
Fi g . 3. Outp u t C h ar acter i sti cs
@ 125ºC
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0 2 4 6 8 1012141618202224
V
DS
- Vo lts
I
D
- Am peres
V
GS
= 10V
6V
5
V
Fig. 4. RDS(on) Normalized to ID = 1A Value
vs. Junction Tem perature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- N orma lize d
V
GS
= 10V
I
D
= 2A
I
D
= 1A
Fig. 5. RDS(on) Normalized to ID = 1A Value
vs. Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
I
D
- Amperes
R
DS(on)
- N orma lize d
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Maximum Drain Current vs.
Case Te mperatu r e
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- A mpe re s
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IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA2N100
IXTP2N100
IXYS REF: T_2N100(3X-G68)4-16-09
Fig. 7. Input Admittance
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
V
GS
- Volts
I
D
- A mpe res
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
I
D
- Amp ere s
g
f s
- Siemen s
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
1
2
3
4
5
6
7
0.3 0.4 0.5 0.6 0.7 0.8 0.9
V
SD
- Volts
I
S
- A mp ere s
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 2 4 6 8 1012141618
Q
G
- NanoCoulombs
V
GS
- V o lt s
V
DS
= 500V
I
D
= 1A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fi g . 12. Maximum Tr an si e n t Ther mal
Impedance
0.01
0.10
1.00
10.00
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
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