1999. 11. 16 1/2
SEMICONDUCTOR
TECHNICAL DATA
TIP41C
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
GENERAL PURPOSE APPLICATION.
FEATURES
·Complementary to TIP42C.
MAXIMUM RATING (Ta=25)
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 100 V
Collector-Emitter Voltage VCEO 100 V
Emitter-Base Voltage VEBO 5 V
Collector Current
DC IC6
A
Pulse ICP 10
Base Current IB2 A
Collector Power
Dissipation
Ta=25PC
2 W
Tc=2565 W
Junction Temperature Tj150
Storage Temperature Range Tstg -55150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Emitter Sustaining Voltage VCEO(SUS) IC=30mA, IB=0 100 - - V
Collector Cut-off Current ICEO VCE=60V, IB=0 - - 0.7 mA
Collector Cut-off Current ICES VCE=100V, VEB=0 - - 400 μA
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 1 mA
DC Current Gain hFE
VCE=4V, IC=0.3A 30 - -
VCE=4V, IC=3A 15 - 75
Collector-Emitter Saturation Voltage VCE(sat) IC=6A, IB=600mA - - 1.5 V
Base-Emitter On Voltage VBE(on) VCE=4V, IC=6A - - 2.0 V
Transition Frequency fTVCE=10V, IC=500mA 3.0 - - MHz
1999. 11. 16 2/2
TIP41C
Revision No : 1