To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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"High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anticrime systems; safety equipment; and medical equipment not specifically designed for life support. "Specific": Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. 2SK3446 Silicon N Channel Power MOS FET Power Switching REJ03G1100-0800 (Previous: ADE-208-1566F) Rev.8.00 Sep 07, 2005 Features * Capable of 2.5 V gate drive * Low drive current * Low on-resistance RDS (on) = 1.5 typ. (at VGS = 4 V) Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92MOD) D 1. Source 2. Drain 3. Gate G 32 Rev.8.00 Sep 07, 2005 page 1 of 6 1 S 2SK3446 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID Value 150 10 1 4 1 0.9 150 -55 to +150 ID (pulse) Note 1 IDR Pch Note 2 Tch Tstg Unit V V A A A W C C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Ta = 25C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 3. Pulse test Rev.8.00 Sep 07, 2005 page 2 of 6 Symbol V (BR) DSS V (BR) GSS Min 150 10 Typ -- -- Max -- -- Unit V V IGSS IDSS VGS (off) RDS (on) RDS (on) |yfs| Ciss Coss Crss Qg Qgs Qgd td (on) tr td (off) tf VDF trr -- -- 0.5 -- -- 0.8 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 1.5 1.9 1.4 98 31 14 3.5 0.5 1.8 8 12 34 19 1.0 60 10 1 1.5 1.95 2.5 -- -- -- -- -- -- -- -- -- -- -- 1.5 -- A A V S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 8 V, VDS = 0 VDS = 150 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 0.5 A, VGS = 4 V Note 3 ID = 0.5 A, VGS = 2.5 V Note 3 ID = 0.5 A, VDS = 10 V Note 3 VDS = 10 V VGS = 0 f = 1 MHz VDD = 100 V VGS = 4 V ID = 1 A VGS = 4 V ID = 0.5 A RL = 60 IF = 1 A, VGS = 0 IF = 1 A, VGS = 0 diF/dt = 100 A/s 2SK3446 Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 10 Pch (W) 1.6 10 ID (A) 3 Drain Current Channel Dissipation 1.2 0.8 0.4 PW 1 DC 0.3 pe ra tio n 50 100 = Operation in this area is limited by RDS(on) 0.01 Ta = 25C 0.001 0.1 0.3 1 200 150 Ambient Temperature Ta (C) 25 C ) 10 30 100 500 VDS (V) Typical Transfer Characteristics 2.5 5 Pulse Test VDS = 10 V Pulse Test 2.5 V 4V 3V 2V 1.0 VGS = 1.5 V 0.5 4 6 Drain to Source Voltage 8 10 Pulse Test 2 ID = 1 A 2 4 6 8 10 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS(on) () 3 0 Gate to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 75C 1 0 2 25C 2 0 0 Tc = -25C 3 Drain Current 1.5 4 ID (A) 2.0 Drain to Source Saturation Voltage VDS(on) (V) 3 Drain to Source Voltage Typical Output Characteristics ID (A) (T c 0.03 1 ms 10 m s( 1s ho t) 0.003 0 0 Drain Current 100 s = O 0.1 s 10 Pulse Test 5 2 VGS = 2.5 V 4V 1 0.5 1 0.5 A 0.2 0.2 A 0 0 2 4 6 Gate to Source Voltage Rev.8.00 Sep 07, 2005 page 3 of 6 8 10 VGS (V) 0.1 0.1 0.3 1 Drain Current 3 ID (A) 10 2SK3446 Forward Transfer Admittance vs. Drain Current 5 Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) () Static Drain to Source on State Resistance vs. Temperature Pulse Test 0.2 A 4 0.5 A ID = 1 A 3 VGS = 2.5 V 0.2 A 2 0.5 A ID = 1 A 1 4V 0 -25 0 25 50 75 100 125 150 Case Temperature 10 3 Tc = -25C 1 25C 0.3 75C 0.1 0.03 0.01 0.01 0.03 30 10 3 Ciss 100 30 Coss 10 Crss 1 0.3 1 3 10 0 10 VDD = 100 V 50 V 25 V 4 VGS 40 2 VDD = 100 V 50 V 25 V 0 2 4 Gate Charge Rev.8.00 Sep 07, 2005 page 4 of 6 6 8 Qg (nC) 40 50 VDS (V) 10 100 Switching Time t (ns) 6 VGS (V) 120 Gate to Source Voltage 8 ID = 1 A 80 30 Switching Characteristics 160 VDS 20 Drain to Source Voltage IDR (A) Dynamic Input Characteristics VDS (V) 10 VGS = 0 f = 1 MHz 3 Reverse Drain Current Drain to Source Voltage 3 ID (A) 300 100 0 0 1 1000 di / dt = 100 A / s VGS = 0, Ta = 25C 1 0.1 0.3 Typical Capacitance vs. Drain to Source Voltage Capacitance C (pF) Reverse Recovery Time trr (ns) 300 0.1 Drain Current Tc (C) Body-Drain Diode Reverse Recovery Time 1000 VDS = 10 V Pulse Test td(off) 30 tf tr td(on) 10 3 VGS = 4 V, VDD = 30 V PW = 5 s, duty 1 % 1 0.1 0.3 1 Drain Current 3 ID (A) 10 2SK3446 Reverse Drain Current IDR (A) 4 Gate to Source Cutoff Voltage VGS(off) (V) Reverse Drain Current vs. Source to Drain Voltage Pulse Test 3 2 5V VGS = 0, -5 V 1 0 0 1 2 Source to Drain Voltage Gate to Source Cutoff Voltage vs. Case Temperature 1.5 VDS = 10 V Pulse Test ID = 10 mA 1.0 1 mA 0.5 0.1 mA 0 -25 VSDF (V) 0 25 50 75 100 125 150 Case Temperature Tc (C) Normalized Transient Thermal Impedance s (t) Normalized Transient Thermal Impedance vs. Pulse Width 10 1 D=1 0.5 0.2 ch - a (t) = s (t) * ch - a ch - a = 139C/W, Ta = 25C 0.1 0.1 0.05 D= PDM 0.02 PW T 0.01 ulse ot p 1sh 0.01 10 100 PW T 1m 10 m 100 m 1 10 100 1000 10000 Pulse Width PW (S) Waveform Switching Time Test Circuit 90% Vout Monitor Vin Monitor D.U.T. Vin 10% RL Vout Vin 4V 50 VDD = 30 V 10% 90% td(on) Rev.8.00 Sep 07, 2005 page 5 of 6 10% tr 90% td(off) tf 2SK3446 Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-51 PRSS0003DC-A TO-92 Mod / TO-92 ModV 0.35g 4.8 0.4 Unit: mm 2.3 Max 0.65 0.1 0.75 Max 0.7 0.60 Max 0.55 Max 10.1 Min 8.0 0.5 3.8 0.4 0.5 Max 1.27 2.54 Ordering Information Part Name 2SK3446TZ-E Quantity 2500 pcs Shipping Container Hold box, Radial taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.8.00 Sep 07, 2005 page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. 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