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April 1st, 2010
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Rev.8.00 Sep 07, 2005 page 1 of 6
2SK3446
Silicon N Channel Power MOS FET
Power Switching REJ03G1100-0800
(Previous: ADE-208-1566F)
Rev.8.00
Sep 07, 2005
Features
Capable of 2.5 V gate drive
Low drive current
Low on-resistance
RDS (on) = 1.5 typ. (at VGS = 4 V)
Outline
RENESAS Package code:
PRSS0003DC-A
(Package name:
TO-92MOD)
1. Source
2. Drain
3. Gate
D
G
S
321
2SK3446
Rev.8.00 Sep 07, 2005 page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Value Unit
Drain to source voltage VDSS 150 V
Gate to source voltage VGSS ±10 V
Drain current ID 1 A
Drain peak current ID (pulse) Note 1 4 A
Body-drain diode reverse drain current IDR 1 A
Channel dissipation Pch Note 2 0.9 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Ta = 25°C
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V (BR) DSS 150 V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V (BR) GSS ±10 — V IG = ±100 µA, VDS = 0
Gate to source leak current IGSS±10 µA VGS = ±8 V, VDS = 0
Zero gate voltage drain current IDSS1 µA VDS = 150 V, VGS = 0
Gate to source cutoff voltage VGS (off) 0.5 1.5 V VDS = 10 V, ID = 1 mA
RDS (on)1.5 1.95 I
D = 0.5 A, VGS = 4 V Note 3 Static drain to source on state resistance RDS (on)1.9 2.5 I
D = 0.5 A, VGS = 2.5 V Note 3
Forward transfer admittance |yfs| 0.8 1.4 S ID = 0.5 A, VDS = 10 V Note 3
Input capacitance Ciss 98 pF
Output capacitance Coss 31 pF
Reverse transfer capacitance Crss 14 pF
VDS = 10 V
VGS = 0
f = 1 MHz
Total gate charge Qg 3.5 nC
Gate to source charge Qgs 0.5 nC
Gate to drain charge Qgd 1.8 nC
VDD = 100 V
VGS = 4 V
ID = 1 A
Turn-on delay time td (on) — 8 — ns
Rise time tr12 ns
Turn-off delay time td (off)34 ns
Fall time tf19 ns
VGS = 4 V
ID = 0.5 A
RL = 60
Body-drain diode forward voltage VDF1.0 1.5 V IF = 1 A, VGS = 0
Body-drain diode reverse recovery time trr60 ns IF = 1 A, VGS = 0
diF/dt = 100 A/µs
Note: 3. Pulse test
2SK3446
Rev.8.00 Sep 07, 2005 page 3 of 6
Main Characteristics
1.6
0
0
0.4
0.8
1.2
50 100 150 200
3
1
0.3
0.1
0.03
0.01
0.1 0.3 1 3 10 30 100 500
2.5
0
0
0.5
1.0
1.5
2.0
2468
10
5
0
0
1
2
3
4
246810
0.003
0.001
10
Ta = 25°C
V
GS
= 1.5 V
2 V
Tc = –25°C
25°C
75°C
2.5 V
Channel Dissipation Pch (W)
Ambient Temperature Ta (°C)
Power vs. Temperature Derating
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Maximum Safe Operation Area
Operation in
this area is
limited by R
DS(on)
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Typical Output Characteristics
Pulse Test
0
0
1
2
246810 0.1 1 100.3 3
10
2
5
1
0.5
0.2
0.1
3
I
D
= 1 A
0.5 A
0.2 A
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS(on)
(V)
Pulse Test
Drain to Source on State Resistance
R
DS(on)
()
Static Drain to Source on State Resistance
vs. Drain Current
Drain Current I
D
(A)
10 µs
PW = 10 ms (1shot)
DC Operation (Tc = 25°C)
V
GS
= 2.5 V
4 V
Pulse Test
1 ms
100 µs
3 V
4 V
2SK3446
Rev.8.00 Sep 07, 2005 page 4 of 6
5
1
2
3
4
–25 0 25 7550 100 125 150
0
0.01 0.03 0.3 1 3 10
10
3
1
0.3
0.03
0.1
0.01
0.1
25°C
Tc = –25°C
75°C
0.5 A
0.2 A
0.5 A
0.2 A
ID = 1 A
ID = 1 A
Drain Current ID (A)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
VDS = 10 V
Pulse Test
Case Temperature Tc (°C)
Static Drain to Source on State Resistance
RDS(on) ()
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
0.1 0.3 1 3 10
1000
100
300
30
3
10
1
0 1020304050
1000
300
30
100
160
120
80
40
0
0
8
246810
0
2
6
4
100
30
1
3
10
0.1 0.3 1 3 10
10
1
3
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
ID = 1 A
V
DS
VGS
VDD = 100 V
50 V
25 V
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
tr
td(on)
td(off)
tf
VGS = 4 V, VDD = 30 V
PW = 5 µs, duty 1 %
Reverse Drain Current IDR (A)
Reverse Recovery Time trr (ns)
Body-Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
Capacitance C (pF)
Drain to Source Voltage VDS (V)
Switching Time t (ns)
Drain Current ID (A)
Switching Characteristics
Gate Charge Qg (nC)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Gate to Source Voltage VGS (V)
VDD = 100 V
50 V
25 V
4 V
VGS = 2.5 V
2SK3446
Rev.8.00 Sep 07, 2005 page 5 of 6
Waveform
0
0
1
2
3
12
4
V
GS
= 0, –5 V
1.5
–25 0 25 50 75 100 125 150
0
0.5
1.0
V
DS
= 10 V
Pulse Test
5 V
Source to Drain Voltage VSDF (V)
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IDR (A)
Pulse Test
Case Temperature Tc (°C)
Gate to Source Cutoff Voltage
vs. Case Temperature
Gate to Source Cutoff Voltage VGS(off) (V)
0.1 mA
I
D
= 10 mA
10 µ100 µ1 m 10 m 100 m 1 10 100 1000 10000
10
1
0.1
0.01
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance γ s (t)
P
DM
PW
T
D = PW
T
θch – a (t) = γ s (t) • θch – a
θch – a = 139°C/W, Ta = 25°C
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
90%
10%
tf
Switching Time Test Circuit
Vin Monitor
D.U.T.
Vin
4 V 50
R
L
Vout
Monitor
1 mA
V
DD
= 30 V
2SK3446
Rev.8.00 Sep 07, 2005 page 6 of 6
Package Dimensions
0.60 Max
0.55 Max
4.8 ± 0.4 3.8 ± 0.4
8.0 ± 0.5
0.7
2.3 Max
10.1 Min
0.5 Max
1.27
2.54
0.65 ± 0.1
0.75 Max
Package Name
PRSS0003DC-A TO-92 Mod / TO-92 ModV
MASS[Typ.]
0.35gSC-51
RENESAS CodeJEITA Package Code
Unit: mm
Ordering Information
Part Name Quantity Shipping Container
2SK3446TZ-E 2500 pcs Hold box, Radial taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
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may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
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