PAGE . 1
May 12.2010-REV.00
MMBT3906W
PNP GENERAL PURPOSE SWITCHING TRANSISTOR
VOLTAGE 40 V olts 150 mWatts
FEATURES
• PNP epitaxial silicon, planar design
• Collector-emitter voltage VCE = -40V
• Collector current IC = -200mA
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: SOT-323, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Apporx. Weight: 0.0001 ounce, 0.005 gram
• Marking: S2A
POWER
ABSOLUTE RATINGS
PARAMETER Symbol Value Units
Co lle cto r - Em itter Vo lta g e V
CEO
-40 V
C olle cto r - B as e Vo lta ge V
CBO
-40 V
Emitter - Base Voltage V
EBO
-5.0 V
Col le ct or Curr ent - Continuous I
C
-200 mA
THERMAL CHARACTERISTICS
PARAMETER Symbol Value Units
Max Power Dissipation (Note 1) P
TOT
150 mW
Therma l Re sistance , Junction to Ambie nt R
θJA
830
O
C/W
Junction Temperature T
J
-55 to 15 0
O
C
Storage Temperature T
STG
-55 to 15 0
O
C
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.
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May 12.2010-REV.00
MMBT3906W
Parameter Symbol Test Condition MIN. TYP. MAX. Units
Collector - Emitter Breakdown Voltage V
(BR)
CEO IC=-1.0mA, IB=0 -40 - - V
Collector - Base Breakdown Voltage V
(BR)
CBO IC=-10uA, IE=0 -40 - - V
Emitter - Base Breakdown Voltage V
(BR)
EBO IE=-10uA, IC=0 -5.0 - - V
Base Cutoff Current I
BL
VCE=-30V, VEB=-3.0V - - -50 nA
Collector Cutoff Current I
CEX
VCE=-30V, VEB=-3.0V - - -50 nA
DC Current Gain (Note 2) h
FE
IC=-0.1mA, VCE=-1.0V
IC=-1.0mA, VCE=-1.0V
IC=-10mA, VCE=-1.0V
IC=-50mA, VCE=-1.0V
IC=-100mA, VCE=-1.0V
60
80
100
60
30
-
-
-
-
-
-
-
300
-
-
-
Collector - Emitter Saturation Voltage (Note 2) V
CE(SAT)
IC=-10mA, IB=-1.0mA
IC=-50mA, IB=-5.0mA --
-0.25
-0.4 V
Base - Emitter Saturation Voltage (Note 2) V
BE(SAT)
IC=-10mA, IB=-1.0mA
IC=-50mA, IB=-5.0mA -0.65
--
--0.85
-0.95 V
Collector - Base Capacitance C
CBO
VCB=-5V, IE=0, f=1MHz - - 4.5 pF
Emitter - Base Capacitance C
EBO
VEB=-0.5V, IC=0, f=1MHz - - 10 pF
Delay Time td VCC=-3V,VBE=--0.5V,
IC=-10mA,IB=-1.0mA --35ns
Rise Time tr VCC=-3V,VBE=-0.5V,
IC=-10mA,IB=-1.0mA --35ns
Storage Time ts VCC=-3V,IC=-10mA
IB1=IB2=-1.0mA - - 225 ns
Fall Time tf VCC=-3V,IC=-10mA
IB1=IB2=-1.0mA --75ns
ELECTRICAL CHARACTERISTICS
Note 2: Pulse Test: Pulse Width < 300 μs, Duty Cycle < 2.0%.
275 W
10K W
0
-0.5V
300ns -10.9V
+3V
Delay and Rise Time Equivalent Test Circuit
<1ns
C *<4pF
S
Storage and Fall Time Equivalent Test Circuit
0
+9 . 1 V
10 to 500us
Duty Cycle ~ 2.0%
-10.9V
< 1ns
0
1N916
+3V
275 W
10K W
C *<4pF
S
SWITCHING TIME EQUIVALENT TEST CIRCUITS
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May 12.2010-REV.00
MMBT3906W
ELECTRICAL CHARACTERISTICS CURVE
Collector Current, -I (mA)
C
Collector Current, -I (mA)
C
Reverse Voltage, V (V)
R
Collector Current, -I (mA)
C
Collector Current, -I (mA)
C
Fig. 1. Typical h vs Collector Current
FE
Fig. 3. Typical V vs Collector Current
CE (sat)
Fig. 2. Typical V vs Collector Current
BE
Fig. 4. Typical V vs Collector Current
BE (sat)
h
FE
-V (V)
CE
(sat)
Capacitance (pF)
-V (V)
BE
(sat)
-V (V)
BE
Fig. 5. Typical Capacitances vs Reverse Voltage
0.01 0.01
300 1.2
1.0
0.8
0.6
0.4
0.2
0.0
250
200
150
100
50
0
0.1 0.11110 10100 1001000 1000
0.01 0.01
0.01 0.100
0.10
1.00 1.000
0.1
-0.1
0.1
1
-1
1
1
10
-10
10
10
100
-100
100
1000
C(CB)
OB
C (EB)
IB
T =100 CJ
o
T =100 CJ
o
T =100 CJ
o
T=25CJ
o
T=25CJ
o
T=25CJ
o
T=25CJ
o
V=1VCE
V=1VCE
T =150 CJ
o
T =150 CJ
o
T =150 CJ
o
T =150 CJ
o
I/
C
I=10
B
I/
C
I=10
B
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May 12.2010-REV.00
MOUNTING P AD LA YOUT
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
ORDER INFORMA TION
LEGAL ST ATEMENT
Copyright PanJit International, Inc 2010
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
MMBT3906W
