AP504-PCB - WJ Communications, Inc.

Specifications and information are subject to change without notice

WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 1 of 5 April 2007

AP504

DCS-band 4W HBT Amplifier Module

Product Features

• 1705 – 1790 MHz

• 31.5 dB Gain

• +25 dBm CDMA2k 7fa Power

(-63 dBc ACPR)

• +12 V Single Supply

• Power Down Mode

• Bias Current Adjustable

• RoHS-compliant flange-mount pkg

Applications

• Final stage amplifiers for Repeaters

• Optimized for driver amplifier PA

mobile infrastructure

Product Description

The AP504 is a high dynamic range power amplifier in a

RoHS-compliant flange-mount package. The multi-stage

amplifier module has 31.5 dB gain. The module has been

internally optimized for linearity to provide +25 dBm (-63

dBc ACPR) linear power for 7-carrier CDMA2000

applications.

The AP504 uses a high reliability InGaP/GaAs HBT

process technology and does not require any external

matching components. The module operates off of a +12V

supply and does not requiring any negative biasing voltages;

an internal active bias allows the amplifier to maintain high

linearity over temperature. It has the added feature of a

+5V power down control pin. While the module has been

tuned for optimal performance for Class AB applications,

the quiescent current can also be adjusted for Class B

applications through an external resistor. A low-cost metal

housing allows the device to have a low thermal resistance

and achieves over 100 years MTTF. All devices are 100%

RF and DC tested.

The AP504 is targeted for use as a driver or final stage

amplifier in wireless infrastructure where high linearity and

high power is required. This combination makes the device

an excellent candidate for next generation multi-carrier 3G

base stations using the DCS1800 frequency band.

Functional Diagram

Top View

Pin No. Function

1 RF Output

2 / 4 Vcc

3 / 5 Vpd

6 RF Input

Case Ground

Specifications (1)

25 ºC, Vcc=12V, Vpd=5V, Icq=835mA, R7=0Ω, 50Ω unmatched fixture

Parameter Units Min Typ Max Test Conditions

Operational Bandwidth MHz 1705 – 1790

Test Frequency MHz 1765

Adjacent Channel Power Ratio dBc -63.2 -61 CDMA2000 7fa 25 dBm Total Power, 885 kHz offset

Power Gain dB 30.5 31.5 35.5 Pout = +25 dBm

Input Return Loss dB 11

Output Return Loss dB 5

Output P1dB dBm +36

Output IP3 dBm +52 Pout = +23 dBm/tone, ∆f = 1 MHz

Operating Current (2) mA 790 850 940 Pout = +25 dBm

Quiescent Current, Icq (2) mA 780 835 920

Device Voltage, Vcc V +12

Device Voltage, Vpd V +5 Pull-down voltage: 0V = “OFF”, 5V=”ON”

Load Stability VSWR 10:1

1. Test conditions unless otherwise noted: 25ºC.

2. The current can be adjusted through an external resistor from the 5V supply to the pull-down voltage pin (pin 3).

Absolute Maximum Rating

Parameter Rating

Operating Case Temperature -40 to +85 °C

Storage Temperature -55 to +150 °C

RF Input Power (continuous)

with output terminated in 50 Ω +15 dBm

Operation of this device above any of these parameters may cause permanent damage.

Ordering Information

Part No. Description

AP504 DCS-band 4W HBT Amplifier Module

AP504-PCB Fully-Assembled Evaluation Board

(Class AB configuration, Icq=835mA)

1 2 3 4 5 6

Specifications and information are subject to change without notice

WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 2 of 5 April 2007

AP504

DCS-band 4W HBT Amplifier Module

Performance Graphs – Class AB Configuration (AP504-PCB)

The AP504-PCB and AP504 module is configured for Class AB by default. The resistor – R7 – which sets the current draw for

the amplifier is set at 0 Ω in this configuration. Increasing that value will decrease the quiescent and operating current of the

amplifier module, as described on the next page.

Notes:

1. Please note that for reliable operation, the evaluation board will have

to be mounted to a much larger heat sink during operation and in

laboratory environments to dissipate the power consumed by the

device. The use of a convection fan is also recommended in

laboratory environments. Details of the mounting holes used in the

WJ heatsink are given on the last page of this datasheet.

2. The area around the module underneath the PCB should not contain

any soldermask in order to maintain good RF grounding.

3. For proper and safe operation in the laboratory, the power-on

sequencing should be followed:

1. Connect RF In and Out

2. Connect the voltages and ground pins as shown in the circuit.

3. Apply the RF signal

4. Power down with the reverse sequence

Gain

+25 °C, 12Vcc, Icq=850mA

1700 1720 1740 1760 1780 1800

Frequency (MHz)

G a in ( d B )

Return Loss

+25 °C, Vcc=12V, Icq=850mA

-25

-20

-15

-10

-5

1700 1720 1740 1760 1780 1800

Frequency (MHz)

M a g n it u d e ( d B )

S11 S22

Gain vs. Temp

1765 MHz, Vcc=12V, Icq=850mA

-40 -20 0 20 40 60 80

Temperature (°C)

G a in (d B )

ACPR vs. Output Power vs. Temp

CDMA2000 SR1, 7FA , fc=1765 MHz, ∆

∆∆

∆f=±885 kHz, Vcc=12V, Icq=850mA

-70

-65

-60

-55

-50

18 20 22 24 26 28

Total Output Power (dBm)

A C P R (d B c )

-40 °C

+25 °C

+85 °C

ACPR vs. Output Power vs. Temp

CDMA2000 SR1, 7FA , fc=1765 MHz, ∆

∆∆

∆f=±1.98 MHz, Vcc=12V, Icq=850mA

-70

-65

-60

-55

-50

18 20 22 24 26 28

Total Output Power (dBm)

A C P R (d B c )

-40 °C

+25 °C

+85 °C

ACPR vs. Frequency vs. Temp

CDMA2000 SR1, 7FA , ∆

∆∆

∆f=±885 kHz, 25 dBm Pout, Vcc=12V, Icq=850mA

-70

-65

-60

-55

-50

1750 1760 1770 1780

Frequency (MHz)

A C P R (d B c )

-40 °C

+25 °C

+85 °C

DNP

0Ω

.01

100pF

+12V

GND

+5V

RF IN RF OUT

Specifications and information are subject to change without notice

WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 3 of 5 April 2007

AP504

DCS-band 4W HBT Amplifier Module

Performance Graphs (cont’d)

ACPR vs. Output Power

CDMA2000 SR1, 1FA , fc=1765 MHz,

+25 °

°°

°C, Vcc=12V, Icq=850mA

-90

-80

-70

-60

18 20 22 24 26

Total Output Power (dBm)

A C P R (d B c )

1.98 MHz offset

885 kHz offset

Icc vs. Output Power

1765 MHz, Vcc=12V, Icq=850mA

760

780

800

820

840

860

18 20 22 24 26 28

Output Channel Power (dBm)

Icc (m A )

-40 °C +25 °C +85 °C

Icc / PAE vs. Output Power

1765 MHz, +25 °C, Vcc=12V, Icq=850mA

0.2

0.4

0.6

0.8

20 22 24 26 28 30 32 34

Output Power (dBm)

Icc (m A ) / P A E

PAE

Icc

Output Power / Gain vs. Input Power

1765 MHz, +25 °C, Vcc=12V, Icq=850mA

-4 -2 0 2 4 6

Input Power (dBm)

G a in ( d B ) / P o u t (d B m )

Pout

Gain

IMD vs. Output Power per tone

1765 MHz, +25 °C, Vcc=12V, Icq=850mA

-80

-70

-60

-50

-40

-30

18 20 22 24 26 28

Output Power per tone (dBm)

IM D (d B )

IMD3_Upper

IMD3_Lower

IMD5

OIP3 vs. Output Power per tone

1765 MHz, +25 °C, Vcc=12V, Icq=850mA

18 20 22 24 26 28

Output Power per tone (dBm)

O IP 3 (d B m )

Specifications and information are subject to change without notice

WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 4 of 5 April 2007

AP504

DCS-band 4W HBT Amplifier Module

MTTF Calculation

The MTTF of the AP504 can be calculated by first

determining how much power is being dissipated by the

amplifier module. Because the device’s intended application

is to be a power amplifier pre-driver or final stage output

amplifier, the output RF power of the amplifier will help

lower the overall power dissipation. In addition, the

amplifier can be biased with different quiescent currents, so

the calculation of the MTTF is custom to each application.

The power dissipation of the device can be calculated with

the following equation:

Pdiss = Vcc * Icc – (Output RF Power – Input RF Power),

Vcc = Operating supply voltage = 12V

Icc = Operating current

{The RF power is converted to Watts}

While the maximum recommended case temperature on the

datasheet is listed at 85 ˚C, it is suggested that customers

maintain an MTTF above 1 million hours. This would

convert to a derating curve for maximum case temperature vs.

power dissipation as shown in the plot below.

Maximum Recommended Case Temperature vs. Power Dissipation

to maintain 1 million hours MTTF

4 5 6 7 8 9 10 11 12

Power Dissipation (Watts)

Maximum Case Temperature (°C)

To calculate the MTTF for the module, the junction

temperature needs to be determined. This can be easily

calculated with the module’s power dissipation, the thermal

resistance value, and the case temperature of operation:

Tj = Pdiss * Rth + Tcase

Tj = Junction temperature

Pdiss = Power dissipation (calculated from above)

Rth = Thermal resistance = 9 ˚C/W

Tcase = Case temperature of module’s heat sink

From a numerical standpoint, the MTTF can be calculated

using the Arrhenius equation:

MTTF = A* e(Ea/k/Tj)

A = Pre-exponential Factor = 6.087 x 10-11 hours

Ea = Activation Energy = 1.39 eV

k = Boltzmann’s Constant = 8.617 x 10-5 eV/ ºK

Tj = Junction Temperature (ºK) = Tj (ºC) + 273

A graphical view of the MTTF can be shown in the plot

below.

MTTF vs. Junction Temperature

1.E+05

1.E+06

1.E+07

130 140 150 160 170 180

Junction Temperature (°C)

MTTF (hours)

Specifications and information are subject to change without notice

WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 5 of 5 April 2007

AP504

DCS-band 4W HBT Amplifier Module

Outline Drawing

2 3 4 56

AP504

Outline Drawing for the Heatsink with the

WJ Evaluation Board

Product Marking

The device will be marked with an “AP504” designator

with an alphanumeric lot code on the top surface of the

package noted as “ABCD” on the drawing. A

manufacturing date will also be printed as “XXYY”, where

the “XX” represents the week number from 1 – 52.

The product will be shipped in tubes in multiples of 15.

ESD / MSL Information

ESD Rating: Class 1C

Value: Passes at ≥ 1,000 to < 2,000 volts

Test: Human Body Model (HBM)

Standard: JEDEC Standard JESD22-A114

ESD Rating: Class III

Value: Passes ≥ 500 to < 1,000 volts

Test: Charged Device Model (CDM)

Standard: JEDEC Standard JESD22-C101