PD- 93892B IRF7458 SMPS MOSFET HEXFET(R) Power MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power Benefits l l l Ultra-Low Gate Impedance Very Low RDS(on) Fully Characterized Avalanche Voltage and Current VDSS RDS(on) max ID 30V 8.0m 14A A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S SO-8 T o p V ie w Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range Max. Units 30 30 14 11 110 2.5 1.6 0.02 -55 to + 150 V V A W W mW/C C Thermal Resistance Symbol RJL RJA Parameter Junction-to-Drain Lead Junction-to-Ambient Typ. Max. Units --- --- 20 50 C/W Notes through are on page 8 www.irf.com 1 8/11/00 IRF7458 Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 30 --- --- Static Drain-to-Source On-Resistance --- Gate Threshold Voltage 2.0 --- Drain-to-Source Leakage Current --- Gate-to-Source Forward Leakage --- Gate-to-Source Reverse Leakage --- Typ. --- 0.029 6.3 7.0 --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 8.0 VGS = 16V, ID = 14A m 9.0 VGS = 10V, ID = 11A 4.0 V VDS = VGS, ID = 250A 20 VDS = 24V, VGS = 0V A 100 VDS = 24V, VGS = 0V, TJ = 125C 200 VGS = 24V nA -200 VGS = -24V Dynamic @ TJ = 25C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 26 --- --- --- --- --- --- --- --- --- --- --- Typ. --- 39 11 8.7 29 10 4.6 22 5.0 2410 1100 110 Max. Units Conditions --- S VDS = 15V, ID = 11A 59 ID = 11A 17 nC VDS = 15V 13 VGS = 10V 44 VGS = 0V, VDS = 16V --- VDD = 15V --- ID = 11A ns --- RG = 1.8 --- VGS = 10V --- VGS = 0V --- VDS = 15V --- pF = 1.0MHz Avalanche Characteristics Symbol EAS IAR Parameter Single Pulse Avalanche Energy Avalanche Current Typ. Max. Units --- --- 280 11 mJ A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) VSD Diode Forward Voltage trr Qrr trr Qrr Reverse Reverse Reverse Reverse 2 Recovery Recovery Recovery Recovery Time Charge Time Charge Min. Typ. Max. Units --- --- 2.3 A --- --- 110 --- --- --- --- --- --- 0.82 0.68 51 87 52 93 1.3 --- 77 130 78 140 V ns nC ns nC Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25C, IS = 11A, VGS = 0V TJ = 125C, I S = 11A, VGS = 0V TJ = 25C, IF = 11A, VR= 20V di/dt = 100A/s TJ = 125C, IF = 11A, VR=20V di/dt = 100A/s www.irf.com IRF7458 1000 1000 VGS 16V 12V 10V 8.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 100 4.5V 10 20s PULSE WIDTH TJ = 25 C 1 0.1 1 10 4.5V 10 R DS(on) , Drain-to-Source On Resistance (Normalized) 2.0 100 TJ = 150 C TJ = 25 C V DS = 15V 20s PULSE WIDTH 5.5 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics 1000 5.0 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10 4.5 20s PULSE WIDTH TJ = 150 C 1 0.1 100 VDS , Drain-to-Source Voltage (V) I D , Drain-to-Source Current (A) VGS 16V 12V 10V 8.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 6.0 ID = 14A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF7458 20 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd Ciss Coss 1000 Crss 100 16 12 8 4 10 0 1 10 0 100 10 20 30 40 50 60 QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) ISD , Reverse Drain Current (A) 100 I D , Drain Current (A) C, Capacitance(pF) 10000 ID = 11A VDS = 24V VDS = 15V VGS , Gate-to-Source Voltage (V) 100000 100 TJ = 150 C 10 TJ = 25 C 100us 10 1ms 1 0.1 0.2 V GS = 0 V 0.6 1.0 1.4 1.8 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 10us 2.2 10ms TA = 25 C TJ = 150 C Single Pulse 1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com Fig 6. On-Resistance Vs. Drain Current IRF7458 16 VDS I D , Drain Current (A) VGS 12 RD D.U.T. RG + -VDD 10V 8 Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit 4 VDS 90% 0 25 50 75 100 TC , Case Temperature 125 150 ( C) 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 P DM t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.01 0.00001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 0.020 R DS(on) , Drain-to -Source On Resistance ( ) R DS (on) , Drain-to-Source On Resistance ( ) IRF7458 0.016 VGS = 6.0V 0.012 VGS = 10V 0.008 VGS = 16V 0.004 0 20 40 60 80 100 0.016 0.014 0.012 ID = 14A 0.010 0.008 0.006 120 4 6 8 10 12 14 16 VGS, Gate -to -Source Voltage (V) ID , Drain Current (A) Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage Current Regulator Same Type as D.U.T. QG VGS .2F QGS .3F D.U.T. QGD 800 + V - DS VG EAS , Single Pulse Avalanche Energy (mJ) 50K 12V VGS 3mA Charge IG ID Current Sampling Resistors Fig 13a&b. Basic Gate Charge Test Circuit and Waveform 15 V V (B R )D S S tp L VD S D .U .T RG IA S 20V IAS tp DRIVE R + V - DD 0.01 Fig 14a&b. Unclamped Inductive Test circuit and Waveforms 6 A TOP BOTTOM ID 5.0A 9.0A 11A 600 400 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( C) Fig 14c. Maximum Avalanche Energy Vs. Drain Current www.irf.com IRF7458 SO-8 Package Details D IM D -B - 5 8 E -A - 1 7 2 5 A 6 3 e 6X 5 H 0 .2 5 (.0 1 0 ) 4 M A M e1 K x 4 5 -C - 0 .1 0 (.0 0 4 ) B 8X 0 .2 5 (.0 1 0 ) A1 L 8X 6 C 8X M C A S B S NOTES: 1 . D IM E N S IO N IN G A N D T O L E R A N C IN G P E R A N S I Y 1 4 .5 M -1 9 8 2 . 2 . C O N T R O L L IN G D IM E N S IO N : IN C H . 3 . D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 4 . O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S -0 1 2 A A . 5 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 (.0 0 6 ). 6 D IM E N S IO N S IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O A S U B S T R A T E .. M IN M AX .05 32 .06 88 1.3 5 1.75 .00 40 .00 98 0.1 0 0.25 B .01 4 .01 8 0.3 6 0.46 C .00 75 .009 8 0.19 0.25 D .18 9 .196 4.80 4.98 E .15 0 .15 7 3.8 1 3.99 e1 A M ILLIM E T E R S M AX A1 e IN C H E S M IN .05 0 B A S IC 1.27 B A S IC .02 5 B A S IC 0 .635 B A S IC H .22 84 .244 0 K .01 1 .01 9 0.2 8 5.8 0 0.48 6.20 L 0.16 .05 0 0.4 1 1.27 0 8 0 8 R E C O M M E N D E D F O O T P R IN T 0 .7 2 (.0 2 8 ) 8X 6 .4 6 ( .2 5 5 ) 1 .7 8 (.0 7 0 ) 8X 1 .2 7 ( .0 5 0 ) 3X SO-8 Part Marking www.irf.com 7 IRF7458 SO-8 Tape and Reel TER M IN AL N UM B ER 1 1 2.3 ( .484 ) 1 1.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) F EE D D IRE C TIO N N OT E S : 1 . CO NT RO L L ING DIM E NSIO N : M IL L IM E T E R . 2 . AL L DIM E NS ION S ARE SHO W N IN M ILL IM E TER S (INC HE S ). 3 . OU TL IN E CO N FO RM S T O E IA -4 8 1 & E IA -5 4 1 . 33 0.00 (12.992) M AX . 14.4 0 ( .566 ) 12.4 0 ( .488 ) N O T ES : 1 . CO NT RO LL ING D IM EN SIO N : M ILLIME TER . 2 . O U TLIN E C O NF O RM S T O E IA-48 1 & E IA -54 1. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 4.6mH Pulse width 400s; duty cycle 2%. When mounted on 1 inch square copper board, t<10 sec RG = 25, IAS = 11A. 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