www.irf.com 1 8/11/00
IRF7458
SMPS MOSFET
HEXFET® Power MOSFET
VDSS RDS(on) max ID
30V 8.0mΩ14A
Symbol Parameter Typ. Max. Units
RθJL Junction-to-Drain Lead –– – 20
RθJA Junction-to-Ambient ––– 50 °C/W
Thermal Resistance
Notes through are on page 8
SO-8
Top View
8
1
2
3
45
6
7
D
D
D
DG
S
A
S
S
A
PD- 93892B
Applications
Benefits
lUltra-Low Gate Impedance
lVery Low RDS(on)
lFully Characterized Avalanche Voltage
and Current
lHigh Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
lHigh Frequency Buck Converters for
Computer Processor Power
Absolute Maximum Ratings
Symbol Parameter Max. Units
VDS Drain-Source Voltage 30 V
VGS Gate-to-Source Voltage ± 30 V
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 14
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 11 A
IDM Pulsed Drain Current110
PD @TA = 25°C Maximum Power Dissipation2.5 W
PD @TA = 70°C Maximum Power Dissipation1.6 W
Linear Derating Factor 0.02 mW/°C
TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C
IRF7458
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Symbol Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode) ––– ––– p-n junction diode.
––– 0.82 1.3 V TJ = 25°C, IS = 11A, VGS = 0V
––– 0.68 ––– TJ = 125°C, I S = 11A, VGS = 0V
trr Reverse Recovery Time ––– 51 77 ns TJ = 25°C, IF = 11A, VR= 20V
Qrr Reverse Recovery Charge ––– 87 130 nC di/dt = 100A/µs
trr Reverse Recovery Time ––– 52 78 ns TJ = 125°C, IF = 11A, VR=20V
Qrr Reverse Recovery Charge ––– 93 140 nC di/dt = 100A/µs
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– –– – V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.029 ––– V/°C Reference to 25°C, ID = 1mA
––– 6.3 8.0 VGS = 16V, ID = 14A
––– 7.0 9.0 VGS = 10V, ID = 11A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
––– ––– 20 µA VDS = 24V, VGS = 0V
––– ––– 100 VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 24V
Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -24V
Static @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS Drain-to-Source Leakage Current
RDS(on) Static Drain-to-Source On-Resistance mΩ
S
D
G
Diode Characteristics
2.3
110 A
VSD Diode Forward Voltage
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy––– 280 mJ
IAR Avalanche Current––– 11 A
Avalanche Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 26 ––– ––– S VDS = 15V, ID = 11A
QgTotal Gate Charge –– – 39 5 9 ID = 11A
Qgs Gate-to-Source Charge – –– 11 17 nC VDS = 15V
Qgd Gate-to-Drain ("Miller") Charge ––– 8.7 13 VGS = 10V
Qoss Output Gate Charge ––– 29 44 V GS = 0V, VDS = 16V
td(on) Turn-On Delay Time ––– 10 –– – V DD = 15V
trRise Time ––– 4.6 ––– ID = 11A
td(off) Turn-Off Delay Time ––– 22 ––– R G = 1.8Ω
tfFall Time ––– 5.0 ––– VGS = 10V
Ciss Input Capacitance ––– 2410 ––– VGS = 0V
Coss Output Capacitance ––– 1100 ––– VDS = 15V
Crss Reverse Transfer Capacitance ––– 11 0 ––– pF ƒ = 1.0MHz
IRF7458
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Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
1000
0.1 1 10 100
20
µ
s PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
16V
12V
10V
8.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
1
10
100
1000
0.1 1 10 100
20
µ
s PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
16V
12V
10V
8.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Volta
g
e (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
10
100
1000
4.5 5.0 5.5 6.0
V = 15V
20µs PULSE WIDTH
DS
V , Gate-to-Source Volta
g
e (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
Fig 4. Normalized On-Resistance
Vs. Temperature
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
14A
IRF7458
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Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
010 20 30 40 50 60
0
4
8
12
16
20
Q , Total Gate Char
g
e (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D11A
V = 15V
DS
V = 24V
DS
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
1000
0.2 0.6 1.0 1.4 1.8 2.2
V ,Source-to-Drain Volta
g
e (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
1
10
100
1000
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T = 150 C
= 25 C
°°
J
A
V , Drain-to-Source Volta
g
e (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
Fig 8. Maximum Safe Operating Area
110 100
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = C
gs + Cgd, C
ds SHORTED
Crss
= C
gd
Coss
= C
ds + Cgd
IRF7458
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Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.01
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 6. On-Resistance Vs. Drain Current
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RGD.U.T.
10V
+
-
VDD
25 50 75 100 125 150
0
4
8
12
16
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
IRF7458
6 www.irf.com
Fig 13. On-Resistance Vs. Gate Voltage
Fig 12. On-Resistance Vs. Drain Current
Fig 13a&b. Basic Gate Charge Test Circuit
and Waveform
Fig 14a&b. Unclamped Inductive Test circuit
and Waveforms Fig 14c. Maximum Avalanche Energy
Vs. Drain Current
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
VGS
Q
G
Q
GS
Q
GD
V
G
Charge
tp
V
(
BR
DSS
I
AS
RG
IAS
0.01
Ω
t
p
D.U.T
L
VDS
+
-VDD
DRIVER
A
15V
20V
25 50 75 100 125 150
0
200
400
600
800
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
5.0A
9.0A
11A
0 20406080100120
I
D , Drain Current (A)
0.004
0.008
0.012
0.016
0.020
RDS (on) , Drain-to-Source On Resistance ( Ω)
VGS = 16V
VGS = 6.0V
VGS = 10V
46810 12 14 16
VGS, Gate -to -Source Voltage (V)
0.006
0.008
0.010
0.012
0.014
0.016
RDS(on), Drain-to -Source On Resistance ( Ω)
ID = 14A
IRF7458
www.irf.com 7
SO-8 Package Details
K x 45°
C
8X
L
8X
θ
H
0.2 5 ( .0 10 ) M A M
A
0.10 (.004)
B 8X
0 .25 (.0 10) M C A S B S
- C -
6X
e
- B -
D
E
- A -
8 7 6 5
1 2 3 4
5
6
5
RECOMMENDED FOOTPRINT
0.72 (.028 )
8X
1.78 (.0 70 )
8 X
6.46 ( .2 55 )
1.27 ( .050 )
3X
DIM IN CHE S MIL L IMETERS
MIN MA X MIN MA X
A .0 53 2 .0 68 8 1 .3 5 1 .7 5
A 1 .0 04 0 .0 09 8 0 .1 0 0 .2 5
B .0 14 .0 18 0 .36 0 .4 6
C .0 07 5 .0 0 98 0 .1 9 0 .2 5
D .1 89 .1 9 6 4 .8 0 4 .9 8
E .1 50 .1 57 3 .81 3 .9 9
e .0 5 0 BAS IC 1 .2 7 BAS IC
e 1 .0 2 5 BAS IC 0.6 3 5 B AS IC
H .2 28 4 .2 4 40 5 .80 6 .2 0
K .0 11 .0 19 0 .28 0 .4 8
L 0 .1 6 .0 50 0 .4 1 1 .2 7
θ
0 ° 8 ° 0 ° 8°
NOTES:
1. DIMENSIONING AND TOLE RANCING PER ANSI Y14.5M-1982.
2 . CONTROL LING DIMENSION : INCH.
3. DIMENSIONS ARE SHOW N IN MILLIMETERS (INCHES).
4 . OUT LINE CONFORMS T O J EDE C OUT LINE MS- 0 1 2 AA .
DIM ENSION DOES NOT INCLUDE MOLD PROTRUSIONS
MOL D P ROTR USIONS NOT T O EX CE ED 0 .2 5 (.00 6).
DIMENSIONS IS T HE L E NGTH OF L EA D FOR SOL DERING TO A SU BST RAT E..
5
6
A1
e1
θ
SO-8 Part Marking
IRF7458
8 www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Starting TJ = 25°C, L = 4.6mH
RG = 25Ω, IAS = 11A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t<10 sec
33 0.00
(12.992)
MAX.
14.4 0 ( .566 )
12.4 0 ( .488 )
N OT ES :
1. CONTROLLING DIMENSION : MILLIMETER.
2 . OUTLINE CONFORMS TO EIA-48 1 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
1 2.3 ( .484 )
1 1.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROL LING DIMENSION : MILLIM ETER .
2. ALL DIM E NS ION S ARE SHO WN IN M ILLIMETER S
(
INCHES
)
.
3. OU TLIN E CO N FORM S TO EIA-481 & EIA-541.
SO-8 Tape and Reel
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Data and specifications subject to change without notice. 8/00