MRF8P20140WHR3 MRF8P20140WHSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1880 to
2025 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
Typical Doherty Single--Carrier W--CDMA Performance: VDD =28Volts,
IDQA = 500 mA, VGSB =1.2Vdc,P
out = 24 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
1880 MHz 16.0 42.8 8.0 --31.0
1920 MHz 16.0 43.7 8.1 --32.6
2025 MHz 15.9 42.0 8.1 --31.2
Capable of Handling 10:1 VSWR, @ 30 Vdc, 1920 MHz, 160 Watts CW (1)
Output Power (3 dB Input Overdrive from Rated Pout)
Typical Pout @ 3 dB Compression Point ≃170 Watts (1,2)
Features
Designed for Wide Instantaneous Bandwidth Applications. VBWres ≃240 MHz.
Designed for Wideband Applications that Require 160 MHz Signal Bandwidth
Production Tested in a Symmetrical Doherty Configuration
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Large--Signal Load--Pull Parameters and Common
Source S--Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C Operation
Designed for Digital Predistortion Error Correction Systems
RoHS Compliant
NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width,
13 inch Reel. For R5 Tape and Reel option, see p. 14.
NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width,
13 inch Reel. For R5 Tape and Reel option, see p. 14.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +65 Vdc
Gate--Source Voltage VGS --6.0, +10 Vdc
Operating Voltage VDD 32, +0 Vdc
Storage Temperature Range Tstg --65 to +150 C
Case Operating Temperature TC125 C
Operating Junction Temperature (3) TJ225 C
CW Operation @ TC=25C
Derate above 25C
CW 140
0.66
W
W/C
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
3. Continuous use at maximum temperature will affect MTTF.
Document Number: MRF8P20140WH
Rev. 0, 4/2011
Freescale Semiconductor
Technical Data
1880--2025 MHz, 24 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
MRF8P20140WHR3
MRF8P20140WHSR3
CASE 465H--02, STYLE 1
NI--780S--4
MRF8P20140WHSR3
CASE 465M--01, STYLE 1
N I -- 7 8 0 -- 4
MRF8P20140WHR3
(Top View)
RFoutA/VDSA
31
Figure 1. Pin Connections
42
RFoutB/VDSB
RFinA/VGSA
RFinB/VGSB
Freescale Semiconductor, Inc., 2011.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF8P20140WHR3 MRF8P20140WHSR3
Table 2. Thermal Characteristics
Characteristic Symbol Value (1) Unit
Thermal Resistance, Junction to Case
Case Temperature 80C, 24 W CW, 28 Vdc, IDQA = 500 mA, VGSB = 1.2 Vdc, 1920 MHz
Case Temperature 96C, 130 W CW(2),28Vdc,I
DQA = 500 mA, VGSB = 1.2 Vdc, 1920 MHz
RJC
0.68
0.40
C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2 (Minimum)
Machine Model (per EIA/JESD22--A115) A (Minimum)
Charge Device Model (per JESD22--C101) IV (Minimum)
Table 4. Electrical Characteristics (TA=25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics (3)
Zero Gate Voltage Drain Leakage Current
(VDS =65Vdc,V
GS =0Vdc)
IDSS — — 10 Adc
Zero Gate Voltage Drain Leakage Current
(VDS =28Vdc,V
GS =0Vdc)
IDSS — — 5 Adc
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 1 Adc
On Characteristics (3,4)
Gate Threshold Voltage
(VDS =10Vdc,I
D= 200 Adc)
VGS(th) 1.1 1.8 2.6 Vdc
Gate Quiescent Voltage
(VDS =28Vdc,I
DA = 500 mAdc)
VGSA(Q) —2.6 —Vdc
Fixture Gate Quiescent Voltage (5)
(VDD =28Vdc,I
DA = 500 mAdc, Measured in Functional Test)
VGGA(Q) 4.5 5.2 6.0 Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=2Adc)
VDS(on) 0.1 0.2 0.3 Vdc
Functional Tests (4,6,7) (In Freescale Doherty Test Fixture, 50 ohm system) VDD =28Vdc,I
DQA = 500 mA, VGSB =1.2Vdc,
Pout = 24 W Avg., f1 = 1880 MHz, f2 = 1910 MHz, 2--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.8 dB @ 0.01%
Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5MHzOffset.
Power Gain Gps 15.0 16.0 18.0 dB
Drain Efficiency D37.5 41.2 — %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 7.3 7.7 —dB
Adjacent Channel Power Ratio ACPR —--31.9 --29.5 dBc
Typical Broadband Performance (7) —(In Freescale Doherty Test Fixture, 50 ohm system) VDD =28Vdc,I
DQA = 500 mA, VGSB =1.2Vdc,
Pout = 24 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR
measured in 3.84 MHz Channel Bandwidth @ 5MHzOffset.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
1880 MHz 16.0 42.8 8.0 --31.0
1920 MHz 16.0 43.7 8.1 --32.6
2025 MHz 15.9 42.0 8.1 --31.2
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
2. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
3. Each side of device measured separately.
4. VDDA and VDDB must be tied together and powered by a single DC power supply.
5. VGG =2.0xV
GS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
6. Part internally matched both on input and output.
7. Measurement made with device in a Symmetrical Doherty configuration. (continued)
MRF8P20140WHR3 MRF8P20140WHSR3
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TA=25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Typical Performances (1) (In Freescale Doherty Test Fixture, 50 ohm system) VDD =28Vdc,I
DQA = 500 mA, VGSB =1.2Vdc,
1880--2025 MHz Bandwidth
Pout @ 1 dB Compression Point, CW P1dB —140 — W
Pout @ 3 dB Compression Point (2) P3dB —170 (3) — W
IMD Symmetry @ 24 W PEP, Pout where IMD Third Order
Intermodulation 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
—133 —
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres —240 —MHz
Gain Flatness in 145 MHz Bandwidth @ Pout =24WAvg. GF—0.25 —dB
Gain Variation over Temperature
(--30Cto+85C)
G — 0.013 —dB/C
Output Power Variation over Temperature
(--30Cto+85C) (3)
P1dB —0.003 —dB/C
1. Measurement made with device in a Symmetrical Doherty configuration.
2. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
3. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
4
RF Device Data
Freescale Semiconductor
MRF8P20140WHR3 MRF8P20140WHSR3
Figure 2. MRF8P20140WHR3(WHSR3) Test Circuit Component Layout
MRF8P20140W
Rev. 1.2
CUT OUT AREA
R2
C
P
VGGA
R3
C4
C7
C6 R6
C26
C2*
C3*
C1
C5
R7
Z1
C9
R1
C11
C10
C8
R5
R4
C24
C25
VGGB VDDB
C22
C20
C21
C13*
C17
C12*
C23
C14
C16
C15
C18 C19
VDDA
Note 1: * denotes that C2, C3, C12 and C13 are mounted vertically.
Note 2: VDDA and VDDB must be tied together and powered by a single DC power supply.
Table 5. MRF8P20140WHR3(WHSR3) Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1 0.6 pF Chip Capacitor ATC600F0R6BT250XT ATC
C2, C3 8.2 pF Chip Capacitors ATC600F8R2BT250XT ATC
C4, C8, C18, C24 10 F, 50 V Chip Capacitors GRM55DR61H106KA88L Murata
C5 1.2 pF Chip Capacitor ATC600F1R2BT250XT ATC
C6, C10, C12, C13, C14,
C20
12 pF Chip Capacitors ATC600F120JT250XT ATC
C7, C11 10 F, 32 V Chip Capacitors GRM32ER61H106KA12L Murata
C9, C17 0.1 pF Chip Capacitors ATC600F0R1BT250XT ATC
C15, C21 6.8 F, 50 V Chip Capacitors C4532X7R1H685KT TDK
C16, C22 2.2 F, 100 V Chip Capacitors C3225X7R2A225KT TDK
C19, C25 220 F, 100 V Chip Capacitors EEV--FK2A221M Panasonic--ECG
C23 0.2 pF Chip Capacitor ATC600F0R2BT250XT ATC
C26 1.5 pF Chip Capacitor ATC600F1R5BT250XT ATC
R1 50 , Chip Resistor ATCCW12010T0050GBK ATC
R2, R3, R4, R5 1.5 k, 1/4 W Chip Resistors CRCW12061K50FKEA Vishay
R6, R7 2.2 , 1/4 W Chip Resistors CRCW12062R2FNEA Vishay
Z1 1700--2000 MHz Band 90, 3 dB Hybrid Coupler 1P503S Anaren
PCB 0.020,r=3.5 R04350B Rogers
MRF8P20140WHR3 MRF8P20140WHSR3
5
RF Device Data
Freescale Semiconductor
4
2
2
4
2
2
Single--ended
Quadrature combined
Doherty
Push--pull
4
4
4
4
Figure 3. Possible Circuit Topologies
6
RF Device Data
Freescale Semiconductor
MRF8P20140WHR3 MRF8P20140WHSR3
TYPICAL CHARACTERISTICS
PARC (dB)
1880
Gps
ACPR
f, FREQUENCY (MHz)
Figure 4. 2--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 24 Watts Avg.
-- 1 . 8
-- 1
-- 1 . 2
-- 1 . 4
-- 1 . 6
15
17
16.8
16.6
-- 3 5
44
42
40
38
-- 3 0
-- 3 1
-- 3 2
-- 3 3
D, DRAIN
EFFICIENCY (%)
D
Gps, POWER GAIN (dB)
16.4
16.2
16
15.8
15.6
15.4
15.2
1900 1920 1940 1960 1980 2000 2020 2040
36
-- 3 4
-- 2
IM3, THIRD ORDER
INTERMODULATION (dBc)
-- 2 9
-- 2 5
-- 2 6
-- 2 7
-- 2 8
-- 3 0
ACPR (dBc)
IM3
PARC
VDD =28Vdc,P
out =24W(Avg.),I
DQA = 500 mA
VGSB = 1.2 Vdc, 2--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth, 30 MHz Carrier Spacing, Input Signal
PAR = 9.8 dB @ 0.01% Probability on CCDF
PARC (dB)
1880
Gps
ACPR
f, FREQUENCY (MHz)
Figure 5. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 24 Watts Avg.
-- 2
-- 1 . 6
-- 1 . 7
-- 1 . 8
-- 1 . 9
15
17
16.8
16.6
-- 3 5
43
42
41
40
-- 3 0
-- 3 1
-- 3 2
-- 3 3
D, DRAIN
EFFICIENCY (%)
D
Gps, POWER GAIN (dB)
16.4
16.2
16
15.8
15.6
15.4
15.2
1900 1920 1940 1960 1980 2000 2020 2040
39
-- 3 4
-- 2 . 1
ACPR (dBc)
PARC
Figure 6. Intermodulation Distortion Products
versus Two--Tone Spacing
TWO--TONE SPACING (MHz)
10
-- 7 0
-- 2 0
-- 3 0
-- 4 0
-- 6 0
1 300
IMD, INTERMODULATION DISTORTION (dBc)
-- 5 0
IM3--U
IM3--L
IM5--U
IM5--L
IM7--L
IM7--U
100
VDD =28Vdc,P
out = 24 W (PEP)
IDQA = 500 mA, VGSB =1.2Vdc
VDD =28Vdc,P
out =24W(Avg.),I
DQA = 500 mA
VGSB = 1.2 Vdc, 2--Carrier W--CDMA, 3.84 MHz
Channel Bandwidth, Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1920 MHz
MRF8P20140WHR3 MRF8P20140WHSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Figure 7. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
1
Pout, OUTPUT POWER (WATTS)
-- 1
-- 3
-- 5
20
0
-- 2
-- 4
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
10 30 40 60
0
60
50
40
30
20
10
DDRAIN EFFICIENCY (%)
-- 3 d B = 3 5 W
50
D
ACPR
PARC
ACPR (dBc)
-- 3 4
-- 2 2
-- 2 4
-- 2 6
-- 3 0
-- 2 8
-- 3 2
16.5
Gps, POWER GAIN (dB)
16
15.5
15
14.5
14
13.5
Gps
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
VDD =28Vdc,I
DQA = 500 mA, VGSB = 1.2 Vdc, f = 1920 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
--1dB=14.5W
-- 2 d B = 2 5 W
1
Gps
ACPR
Pout, OUTPUT POWER (WATTS) AVG.
Figure 8. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
-- 1 0
-- 2 0
8
20
0
60
50
40
30
20
D, DRAIN EFFICIENCY (%)
D
Gps, POWER GAIN (dB)
18
16
10 100 200
10
-- 6 0
ACPR (dBc)
14
12
10
0
-- 3 0
-- 4 0
-- 5 0
VDD =28Vdc,I
DQA = 500 mA
VGSB = 1.2 Vdc, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
1880 MHz
1
Pout, OUTPUT POWER (WATTS) AVG.
Figure9.2--CarrierW--CDMAPowerGain,IM3,IM5,IM7
versus Output Power
8
20
-- 7 0
-- 1 0
-- 2 0
-- 3 0
-- 4 0
-- 5 0
IM3, IM5, IM7 (dBc)
Gps, POWER GAIN (dB)
18
16
10 200
-- 6 0
14
12
10
Figure 10. Broadband Frequency Response
0
18
f, FREQUENCY (MHz)
VDD =28Vdc
Pin =0dBm
IDQA = 500 mA
VGSB =1.2Vdc
12
9
6
GAIN (dB)
15
3
1650 1725 1800 1875 1950 2025 2100 2175 2250
100
IM3--U IM3--L IM5--U
IM5--L
IM7--U
IM7--L
Input Signal PAR = 9.8 dB @
0.01% Probability on CCDF
VDD =28Vdc,I
DQA = 500 mA, VGSB = 1.2 Vdc, f1 = 1880 MHz
f2 = 1910 MHz, 2--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth
2025 MHz
1920 MHz
1880 MHz
1920 MHz2025 MHz
1880 MHz
2025 MHz
1920 MHz
Gps
8
RF Device Data
Freescale Semiconductor
MRF8P20140WHR3 MRF8P20140WHSR3
W--CDMA TEST SIGNAL
10
0.0001
100
0
PEAK--TO--AVERAGE (dB)
Figure 11. CCDF W--CDMA IQ Magnitude
Clipping, 2--Carrier Test Signal
10
1
0.1
0.01
0.001
2468
PROBABILITY (%)
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ 5MHzOffset.
Input Signal PAR = 9.8 dB @ 0.01%
Probability on CCDF
Input Signal
12
Figure 12. 2-Carrier W-CDMA Spectrum
f, FREQUENCY (MHz)
-- 11 0
--120
-- 7 0
-- 2 0
-- 8 0
-- 6 0
-- 5 0
(dB)
-- 9 0
--100
-- 4 0
-- 3 0
3.84 MHz
Channel BW
-- I M 3 i n
3.84 MHz BW
+IM3 in
3.84 MHz BW
--ACPR in
3.84 MHz BW
+ACPR in
3.84 MHz BW
6015 45300-- 1 5-- 3 0-- 4 5-- 6 0--75 75
10
0.0001
100
0
PEAK--TO--AVERAGE (dB)
Figure 13. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
1
0.1
0.01
0.001
2468
PROBABILITY (%)
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ 5MHzOffset.
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
Input Signal
12
-- 6 0
--100
10
(dB)
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 7 0
-- 8 0
-- 9 0
3.84 MHz
Channel BW
7.21.8 5.43.60-- 1 . 8-- 3 . 6-- 5 . 4-- 9 9
f, FREQUENCY (MHz)
Figure 14. Single--Carrier W--CDMA Spectrum
-- 7 . 2
--ACPR in 3.84 MHz
Integrated BW
+ACPRin3.84MHz
Integrated BW
-- 1 0
0
MRF8P20140WHR3 MRF8P20140WHSR3
9
RF Device Data
Freescale Semiconductor
VDD =28Vdc,I
DQA = 500 mA,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zload (1)
()
Max Output Power
P1dB P3dB
(dBm) (W) D(%) (dBm) (W) D(%)
1880 5.35 -- j5.03 2.36 -- j4.84 49.7 93 53.7 50.5 113 56.2
1930 7.39 -- j5.10 2.57 -- j4.73 50.0 100 56.9 50.8 119 59.3
1990 9.46 -- j1.71 2.48 -- j5.11 50.0 100 56.4 50.7 118 58.6
2025 9.30 + j0.80 2.50 -- j5.30 50.0 100 56.7 50.7 118 59.1
(1) Load impedance for optimum P1dB power.
Zsource = Impedance as measured from gate contact to ground.
Zload = Impedance as measured from drain contact to ground.
Figure 15. Carrier Side Load Pull Performance — Maximum P1dB Tuning
Zsource Zload
Input
Load Pull
Tuner
Device
Under
Test
Output
Load Pull
Tuner
VDD =28Vdc,I
DQA = 500 mA,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zload (1)
()
Max Drain Efficiency
P1dB P3dB
(dBm) (W) D(%) (dBm) (W) D(%)
1880 5.35 -- j5.03 6.91 -- j4.37 47.6 57 64.6 48.2 67 65.2
1930 7.39 -- j5.10 6.36 -- j3.60 48.0 63 67.3 48.6 72 68.3
1990 9.46 -- j1.71 5.61 -- j3.11 48.0 63 67.2 48.6 72 67.8
2025 9.30 + j0.80 5.28 -- j2.88 47.9 61 66.5 48.5 70 67.3
(1) Load impedance for optimum P1dB efficiency.
Zsource = Impedance as measured from gate contact to ground.
Zload = Impedance as measured from drain contact to ground.
Figure 16. Carrier Side Load Pull Performance — Maximum Efficiency Tuning
Zsource Zload
Input
Load Pull
Tuner
Device
Under
Test
Output
Load Pull
Tuner
10
RF Device Data
Freescale Semiconductor
MRF8P20140WHR3 MRF8P20140WHSR3
PACKAGE DIMENSIONS
MRF8P20140WHR3 MRF8P20140WHSR3
11
RF Device Data
Freescale Semiconductor
12
RF Device Data
Freescale Semiconductor
MRF8P20140WHR3 MRF8P20140WHSR3
MRF8P20140WHR3 MRF8P20140WHSR3
13
RF Device Data
Freescale Semiconductor
14
RF Device Data
Freescale Semiconductor
MRF8P20140WHR3 MRF8P20140WHSR3
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, Software and Tools to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
.s2p File
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
R5 TAPE AND REEL OPTION
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
The R5 tape and reel option for MRF8P20140WH and MRF8P20140WHS parts will be available for 2 years after release of
MRF8P20140WH and MRF8P20140WHS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be
delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5
tape and reel option will be offered MRF8P20140WH and MRF8P20140WHS in the R3 tape and reel option.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0Apr. 2011 Initial Release of Data Sheet
MRF8P20140WHR3 MRF8P20140WHSR3
15
RF Device Data
Freescale Semiconductor
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Document Number: MRF8P20140WH
Rev. 0, 4/2011
