2SC5086
2003-03-19
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5086
VHF~UHF Band Low Noise Amplifier Applications
· Low noise figure, high gain.
· NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz)
Maximum Ratings (Ta =
==
= 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 20 V
Collector-emitter voltage VCEO 12 V
Emitter-base voltage VEBO 3 V
Base current IB 40 mA
Collector current IC 80 mA
Collector power dissipation PC 100 mW
Junction temperature Tj 125 °C
Storage temperature range Tstg -55~125 °C
Microwave Characteristics (Ta =
==
= 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Transition frequency fT VCE = 10 V, IC = 20 mA 5 7 ¾ GHz
ïS21eï2 (1) VCE = 10 V, IC = 20 mA, f = 500 MHz ¾ 16.5 ¾
Insertion gain ïS21eï2 (2) VCE = 10 V, IC = 20 mA, f = 1 GHz 7.5 11 ¾
dB
NF (1) VCE = 10 V, IC = 5 mA, f = 500 MHz ¾ 1 ¾
Noise figure
NF (2) VCE = 10 V, IC = 5 mA, f = 1 GHz ¾ 1.1 2
dB
Electrical Characteristics (Ta =
==
= 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO VCB = 10 V, IE = 0 ¾ ¾ 1 mA
Emitter cut-off current IEBO V
EB = 1 V, IC = 0 ¾ ¾ 1 mA
DC current gain hFE
(Note 1)
VCE = 10 V, IC = 20 mA 80 ¾ 240
Output capacitance Cob ¾ 1.0 ¾ pF
Reverse transfer capacitance Cre
VCB = 10 V, IE = 0, f = 1 MHz (Note 2) ¾ 0.65 1.15 pF
Note 1: hFE classification O: 80~160, Y: 120~240
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-2H1A
Weight: 2.4 mg (typ.)