1
SEMICONDUCTORS
SUMMARY
Schottky Diode - VR= 60V; VF= 600mV(@1A); IC=1.65A
DESCRIPTION
Packaged in the new innovative 3x2 MLP (Micro Leaded Package) outline, this
combination dual comprises two 60V 0.9A Schottky barrier diodes. This excellent
combination provides users with highly efficient performance in applications
including DC-DC converters and charging circuits.
Additionally users gain several other key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Lower Package Height (0.9mm nom)
Reduced component count
FEATURES
Extremely Low VF, fast switching Schottky
IF= 1.65A Continuous Forward Current
3mm x 2mm MLP
APPLICATIONS
DC-DC Converters
DC-DC Modules
Mosfet gate drive circuits
Charging circuits
Mobile Phones
Motor Control
DEVICE MARKING
DS2
ZXSDS2M832
ISSUE 2 June 2003
MPPS™ Miniature Package Power Solutions
DUAL 60V, 1.65A SCHOTTKY DIODE COMBINATION
DEVICE REEL
SIZE TAPE
WIDTH QUANTITY
PER REEL
ZXSDS2M832TA 7 8mm 3000 units
ZXSDS2M832TC 13” 8mm 10000 units
ORDERING INFORMATION
Bottom View
PINOUT
MLP832
ZXSDS2M832
SEMICONDUCTORS
ISSUE 2 June 2003
2
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a)(f) RJA 83.3 °C/W
Junction to Ambient (b)(f) RJA 51 °C/W
Junction to Ambient (c)(f) RJA 125 °C/W
Junction to Ambient (d)(f) RJA 111 °C/W
Junction to Ambient (d)(g) RJA 73.5 °C/W
Junction to Ambient (e)(g) RJA 41.7 °C/W
NOTES
(a) For a dual device surface mounted on 8 sq. cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The
copper area is split down the center line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed
pads attached. The copper area is split down the centerline into two separate areas with one half connected to each half of the dual device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper FR4 PCB, in still air conditions with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper FR4 PCB, in still air conditions with all exposed pads attached. The
copper area is split down the centerline into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper FR4 PCB, in still air conditions with all exposed pads attached. The
copper area is split down the centerline into two separate areas with one half connected to each half of the dual device.
(f) For dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in
the package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper of 1 oz
weight, 1mm wide tracks and one half of the device active is Rth= 250°C/W giving a power rating of Ptot=400mW.
THERMAL RESISTANCE
PARAMETER SYMBOL LIMIT UNIT
Reverse Voltage VR60 V
Forward Voltage @ IF= 1000mA VF600 mV
Forward Current IF1.65 A
Average Forward Current D=50%, t<=300us IFAV 1.24 A
Non Repetitive Forward Current t<=100us
Non Repetitive Forward Current t<=10ms
IFSM 16.8
5.63
A
A
Power Dissipation at TA=25°C(a)(f)
Linear Derating Factor
PD1.2
12
W
mW/°C
Power Dissipation at TA=25°C(b)(f)
Linear Derating Factor
PD2
20
W
mW/°C
Power Dissipation at TA=25°C(c)(f)
Linear Derating Factor
PD0.8
8
W
mW/°C
Power Dissipation at TA=25°C(d)(f)
Linear Derating Factor
PD0.9
9
W
mW/°C
Power Dissipation at TA=25°C(d)(g)
Linear Derating Factor
PD1.36
13.6
W
mW/°C
Power Dissipation at TA=25°C(e)(g)
Linear Derating Factor
PD2.4
24
W
mW/°C
Storage Temp, Range Tstg -55 to+150 °C
Operating & Storage Temp, Range Tj -55 to+125 °C
ABSOLUTE MAXIMUM RATINGS
ZXSDS2M832
SEMICONDUCTORS
ISSUE 2 June 2003
3
TYPICAL CHARACTERISTICS
ZXSDS2M832
SEMICONDUCTORS
ISSUE 2 June 2003
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Reverse Breakdown Voltage V(BR)R 60 80 V IR = 300µA*
Forward Voltage VF245
275
330
395
455
510
620
500
280
320
390
470
530
600
740
-
mV
mV
mV
mV
mV
mV
mV
mV
IF= 50mA*
IF= 100mA*
IF= 250mA*
IF= 500mA*
IF= 750mA*
IF= 1000mA*
IF= 1500mA*
IF= 1000mA*, TA= 100°C
Reverse Current IR50 100 µA VR= 45V
Diode Capacitance CD17 pF f = 1MHz, VR= 25V
Reverse Recovery Time trr 12 ns Switched from
IF= 500mA to IR= 500mA
Measured at IR= 50mA
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
NOTES
* Measured under pulsed conditions
ZXSDS2M832
SEMICONDUCTORS
ISSUE 2 June 2003
5
TYPICAL CHARACTERISTICS
ZXSDS2M832
SEMICONDUCTORS
6
ISSUE 2 June 2003
Europe
Zetex plc
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United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
Zetex GmbH
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D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Americas
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road
Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
© Zetex plc 2003
DIM Millimetres Inches DIM Millimetres Inches
Min Max Min Max Min Max Min Max
A 0.80 1.00 0.031 0.039 e 0.65 REF 0.0256 BSC
A1 0.00 0.05 0.00 0.002 E 2.00 BSC 0.0787 BSC
A2 0.65 0.75 0.0255 0.0295 E2 0.43 0.63 0.017 0.0249
A3 0.15 0.25 0.006 0.0098 E4 0.16 0.36 0.006 0.014
b 0.24 0.34 0.009 0.013 L 0.20 0.45 0.0078 0.0157
b1 0.17 0.30 0.0066 0.0118 L2 - 0.125 0.00 0.005
D 3.00 BSC 0.118 BSC r 0.075 BSC 0.0029 BSC
D2 0.82 1.02 0.032 0.040 0°12°0°12°
D3 1.01 1.21 0.0397 0.0476 - ----
PACKAGE DIMENSIONS
Controlling dimensions are in millimetres. Approximate conversions are given in inches
PACKAGE OUTLINE (3mm x 2mm Micro Leaded Package)