© 2009 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 250 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ 250 V
VGSS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C 120 A
ILRMS Lead Current Limit, RMS 75 A
IDM TC= 25°C, Pulse Width Limited by TJM 300 A
IATC= 25°C 60A
EAS TC= 25°C 2.5 J
dV/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns
PDTC= 25°C 700 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Force (PLUS247) 20..120/4.5..27 N/lb.
Mounting Torque (TO-264) 1.13/10 Nm/lb.in.
Weight PLUS247 6 g
TO-264 10 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 250 V
VGS(th) VDS = VGS, ID = 4mA 2.5 5.0 V
IGSS VGS = ±20V, VDS = 0V ±200 nA
IDSS VDS = VDSS, VGS= 0V 25 μA
TJ = 125°C 250 μA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 19 24 mΩ
PolarTM Power MOSFET
HiPerFETTM
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrisic Diode
IXFK120N25P
IXFX120N25P
VDSS = 250V
ID25 = 120A
RDS(on) ≤≤
≤≤
≤ 24mΩΩ
ΩΩ
Ω
DS99379F(5/09)
trr ≤≤
≤≤
≤ 200ns
G = Gate D = Drain
S = Source TAB = Drain
(TAB)
GDS
TO-264 (IXFK)
PLUS247 (IXFX)
(TAB)
Features
zInternational Standard Packages
zFast Intrinsic Diode
zAvalanche Rated
zLow Package Inductance
Advantages
zEasy to Mount
zSpace Savings
zHigh Power Density
Applications
zSwitched-Mode and Resonant-Mode
Power Supplies
zDC-DC Converters
zLaser Drivers
zAC and DC Motor Drives
zRobotics and Servo Controls
http://store.iiic.cc/
IXFK120N25P
IXFX120N25P
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 10V, ID = 0.5 • ID25, Note 1 45 70 S
Ciss 8700 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 1300 pF
Crss 240 pF
td(on) 30 ns
tr 33 ns
td(off) 130 ns
tf 33 ns
Qg(on) 185 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 50 nC
Qgd 80 nC
RthJC 0.18 °C/W
RthCS 0.15 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 120 A
ISM Repetitive, Pulse Width Limited by TJM 300 A
VSD IF = 120A, VGS = 0V, Note 1 1.5 V
trr 200 nS
QRM 0.8 μC
IRM 8.0 A
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 3.3Ω (External)
IF = 25A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
PLUS 247TM (IXFX) Outline
TO-264 (IXFK) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
http://store.iiic.cc/
© 2009 IXYS CORPORATION, All Rights Reserved
IXFK120N25P
IXFX120N25P
Fig. 1. Ou tp u t C h aracter isti cs
@ 25ºC
0
10
20
30
40
50
60
70
80
90
100
110
120
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
V
DS
- Volt s
I
D
- Am peres
V
GS
= 10V
9V
7
V
8
V
6
V
Fig. 2. Extended Output Characteristics
@ 25º C
0
40
80
120
160
200
240
0 2 4 6 8 10 12 14 16 18 20
V
DS
- Volt s
I
D
- Am peres
V
GS
= 10V
7
V
6
V
9
V
8
V
Fi g . 3. Ou tp u t C h ar acter i stic s
@ 125ºC
0
20
40
60
80
100
120
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
V
DS
- Volt s
I
D
- A mp ere s
V
GS
= 10V
9V
8
V
7V
6V
5V
Fig. 4. R
DS(on)
Normalized to I
D
= 60A Value
vs. Junction Temp erature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- N orma liz ed
V
GS
= 10V
I
D
= 120A
I
D
= 60A
Fig. 5. R
DS(on)
Normalized to I
D
= 60A Val u e
vs. Drain Current
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
3.8
0 30 60 90 120 150 180 210 240 270
I
D
- Amp eres
R
DS(on)
- N ormaliz ed
V
GS
= 10V
15V
- - - -
T
J
= 150ºC
T
J
= 25ºC
Fig. 6. Maxim um Drain Current vs.
Case Temp er atur e
0
10
20
30
40
50
60
70
80
90
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Am peres
External Lead Cur r ent Limit
http://store.iiic.cc/
IXFK120N25P
IXFX120N25P
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
160
180
200
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
V
GS
- Volts
I
D
- Am peres
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
100
110
120
0 20 40 60 80 100 120 140 160 180 200 220
I
D
- A mperes
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
50
100
150
200
250
300
350
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V
SD
- V olt s
I
S
- Am peres
T
J
= 125ºC
T
J
= 25ºC
Fi g . 10. Gate C h ar g e
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140 160 180 200
Q
G
- NanoCoulombs
V
GS
- V o lts
V
DS
= 125V
I
D
= 60A
I
G
= 10mA
Fig. 11. Capacitance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- V olt s
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Forward-Bias Safe Operating Area
1
10
100
1,000
10 100 1000
V
DS
- Volts
I
D
- Am peres
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
100µs
R
DS(on)
Limit
10ms
DC
http://store.iiic.cc/
© 2009 IXYS CORPORATION, All Rights Reserved
IXFK120N25P
IXFX120N25P
IXYS REF: T_120N25P(88)4-27-09
Fig. 13. Maxim u m T ransient T hermal Impedance
0.001
0.010
0.100
1.000
0.0001 0.001 0.01 0.1 1 10
Pu l se Width - Seconds
Z
(th)JC
- ºC / W
http://store.iiic.cc/
